专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080078503A1 Mechanical pump operating well for a long term and method of manufacturing the same 审中-公开
标题翻译：机械泵长期运行良好，制造方法相同
公开(公告)号：US20080078503A1
公开(公告)日：2008-04-03
申请号：US11905580
申请日：2007-10-02
申请人： Tadahiro OHMI , Isao Akutsu
发明人： Tadahiro OHMI , Isao Akutsu
IPC分类号： H01L21/00 , B05D3/00 , C30B35/00 , F04B53/00
CPC分类号： F04C18/16 , C23C16/4412 , C23C26/00 , F04C25/02 , F04C29/04 , F04C2220/12 , F04C2230/91 , F04C2280/02 , F05C2201/043 , Y10T117/10
摘要： A mechanical pump of the present invention is applied to, for example, a screw pump A for exhausting a gas from a processing chamber. The screw pump comprises a gas-exposed region exposed to the gas and an yttria (Y2O3) film formed on the gas-exposed region.
摘要翻译：本发明的机械泵例如用于从处理室排出气体的螺杆泵A。螺杆泵包括暴露于气体的气体暴露区域和形成在气体暴露区域上的氧化钇（Y 2 O 3 O 3）膜。

2. 发明申请

US20130189423A1 Film-forming material and method for predicting film-forming material 失效
标题翻译：成膜材料和预测成膜材料的方法
公开(公告)号：US20130189423A1
公开(公告)日：2013-07-25
申请号：US13556193
申请日：2012-07-23
申请人： Tadahiro OHMI , Shozo Nakayama , Hironori Ito
发明人： Tadahiro OHMI , Shozo Nakayama , Hironori Ito
IPC分类号： C23C16/44
CPC分类号： C23C16/44 , C23C14/12 , C23C14/228 , C23C14/243 , C23C14/56 , C23C14/562 , H01L51/0008 , H01L51/56
摘要： Disclosed is a method for prediction of a film material such as a raw material for organic EL. In the method, a film material having an evaporation rate (V (%)) represented by the formula below can be predicted based on the values of the constant (Ko) and the activation energy (Ea). V=(Ko/P)×e−Ea/kT wherein Ko represents a constant (%·Torr), P represents a pressure (Torr), Ea represents an activation energy (eV), k represents a Boltzmann constant, and T represents an absolute temperature.
摘要翻译：公开了一种用于预测有机EL原料的薄膜材料的方法。在该方法中，可以基于常数（Ko）和活化能（Ea）的值来预测具有由下式表示的蒸发速率（V（％））的膜材料。 V =（Ko / P）×e-Ea / kT其中Ko表示常数（％·Torr），P表示压力（Torr），Ea表示活化能（eV），k表示玻尔兹曼常数，T表示绝对温度。

3. 发明申请

US20130017686A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130017686A1
公开(公告)日：2013-01-17
申请号：US13620497
申请日：2012-09-14
申请人： Tadahiro OHMI , Kazuhide INO , Takahiro ARAKAWA
发明人： Tadahiro OHMI , Kazuhide INO , Takahiro ARAKAWA
IPC分类号： H01L21/3065 , C23C16/511
CPC分类号： H01L22/10 , H01J37/32192 , H01L21/67017 , H01L21/67069
摘要： A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4≦D≦1.3×n/4 (n being a natural number).
摘要翻译：一种等离子体处理装置，用于使用等离子体处理待处理物体。该装置包括：处理室，其限定用于容纳待处理物体和处理气体的处理腔;微波辐射天线，具有用于辐射微波的微波辐射表面，以激发处理空腔中的等离子;以及电介质本体设置为与微波辐射表面相对，其中以微波的波长表示的微波辐射表面和远离微波辐射表面的电介质体的表面之间的距离D为距离单位确定在满足不等式0.7×n / 4＆nlE; D＆nlE; 1.3×n / 4（n为自然数）的范围内。

4. 发明申请

US20120292743A1 SURFACE TREATMENT METHOD FOR ATOMICALLY FLATTENING A SILICON WAFER AND HEAT TREATMENT APPARATUS 有权
标题翻译：表面处理方法，用于原子层析硅和热处理装置
公开(公告)号：US20120292743A1
公开(公告)日：2012-11-22
申请号：US13565868
申请日：2012-08-03
申请人： Tadahiro OHMI , Akinobu TERAMOTO , Tomoyuki SUWA
发明人： Tadahiro OHMI , Akinobu TERAMOTO , Tomoyuki SUWA
IPC分类号： F27B9/00 , H01L29/06 , F26B7/00
CPC分类号： H01L21/3247 , F27B17/0025 , H01L21/02052 , H01L21/02238 , H01L21/02252 , H01L21/302 , H01L21/67017 , H01L21/67109 , H01L21/67126 , H01L21/67757
摘要： In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.
摘要翻译：在具有分别通过单原子层阶梯逐步形成的多个台阶的表面的硅晶片中，不形成滑移线。

5. 发明申请

US20120237684A1 METHOD OF MANUFACTURING A TRANSPARENT MEMBER AND PLASTIC MEMBER 审中-公开
标题翻译：制造透明会员和塑料会员的方法
公开(公告)号：US20120237684A1
公开(公告)日：2012-09-20
申请号：US13465665
申请日：2012-05-07
申请人： Tadahiro OHMI , Naoki Tanahashi , Keiichi Nii
发明人： Tadahiro OHMI , Naoki Tanahashi , Keiichi Nii
IPC分类号： B05D3/04
CPC分类号： C08J7/126 , C08J2365/00 , Y10T428/24612 , Y10T428/24628 , Y10T428/31504 , Y10T428/31855
摘要： A plastic member, for example, a hydrocarbon-based transparent polymer molded product is subjected to fluorination processing in a fluorine gas within a reaction device 8 to fluorinate only a surface layer thereof. Thus, a refractive index can be lowered, a surface reflection can be lowered, and light transmittance of a base material can be improved.
摘要翻译：将例如烃类透明聚合物成型体的塑料部件在反应装置8内的氟气中进行氟化处理，仅氟化其表面层。因此，可以降低折射率，可以降低表面反射，并且可以提高基材的透光率。

6. 发明申请

US20120211465A1 FLEX-RIGID PRINTED WIRING BOARD AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译： FLEX-RIGID印刷线路板及其制造方法
公开(公告)号：US20120211465A1
公开(公告)日：2012-08-23
申请号：US13459628
申请日：2012-04-30
申请人： Akihiro SATO , Masahiro SASAKI , Tadahiro OHMI , Akihiro MORIMOTO
发明人： Akihiro SATO , Masahiro SASAKI , Tadahiro OHMI , Akihiro MORIMOTO
IPC分类号： H05K3/00 , B32B37/14 , B32B38/08 , B32B38/10
CPC分类号： H05K3/4691 , C23F1/02 , C23F1/18 , C23F4/00 , C23F4/04 , H05K3/064 , H05K3/243 , H05K3/4652 , H05K2201/09736 , H05K2203/0369 , Y10T29/49117 , Y10T29/49155 , Y10T29/49165 , Y10T156/10
摘要： A flex-rigid printed wiring board is provided which can retain flexibility of a flexible portion while increasing durability of the flexible portion against folding, and can ensure conduction in a rigid portion, and a method of manufacturing the printed wiring board. The flex-rigid printed wiring board includes a conductor layer provided on at least one face of a base film, one region of the wiring board containing the base film being a rigid region, an another region containing the base film being a flexible region. The average thickness “tf” of the conductor layer on the base film formed in the flexible region and the average thickness “tR” of the conductor layer on the base film formed in the rigid region satisfy the relationship of tf
摘要翻译：提供柔性刚性印刷线路板，其可以保持柔性部分的柔性，同时增加柔性部分的折叠的耐久性，并且可以确保刚性部分中的导电性，以及制造印刷线路板的方法。柔性刚性印刷电路板包括设置在基膜的至少一个面上的导体层，所述布线基板的一个区域包含基膜为刚性区域，另一区域包含基膜为柔性区域。形成在柔性区域的基底膜上的导体层的平均厚度“tf”和形成在刚性区域中的基底膜上的导体层的平均厚度“tR”满足tf

7. 发明申请

US20120186638A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL 审中-公开
标题翻译：光电转换元件和太阳能电池
公开(公告)号：US20120186638A1
公开(公告)日：2012-07-26
申请号：US13188848
申请日：2011-07-22
申请人： Tadahiro OHMI
发明人： Tadahiro OHMI
IPC分类号： H01L31/075
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/028 , H01L31/03682 , H01L31/03762 , H01L31/03921 , H01L31/046 , H01L31/052 , H01L31/075 , Y02E10/546 , Y02E10/547 , Y02E10/548
摘要： Provided is a photoelectric conversion element that has an nip structure formed of amorphous silicon and that is improved in energy conversion efficiency by a structure in which an n+-type a-Si layer is in contact with a transparent electrode formed by an n+-type ZnO layer. This makes it possible to realize photoelectric conversion elements and a solar cell module or facility with large area and high power with an influence on the global resources minimized.
摘要翻译：提供一种具有由非晶硅形成的压区结构的光电转换元件，其通过n +型a-Si层与由n +型ZnO形成的透明电极接触的结构而提高能量转换效率层。这使得可以实现光电转换元件和具有大面积和大功率的太阳能电池模块或设备，从而影响全球资源的最小化。

8. 发明申请

US20130307404A1 VACUUM TUBE AND VACUUM TUBE MANUFACTURING APPARATUS AND METHOD 审中-公开
标题翻译：真空管和真空管制造设备和方法
公开(公告)号：US20130307404A1
公开(公告)日：2013-11-21
申请号：US13934488
申请日：2013-07-03
申请人： Tadahiro OHMI , Akihiro MORIMOTO
发明人： Tadahiro OHMI , Akihiro MORIMOTO
IPC分类号： H01J9/395 , H01J21/00
CPC分类号： H01J9/395 , H01J7/02 , H01J9/38 , H01J9/385 , H01J17/20 , H01J21/00 , H01J37/18 , H01J61/20 , H01J61/24
摘要： With respect to a vacuum tube having a reduced pressure vessel containing an electric discharge gas sealed therein, problems such as the lowering of discharge efficiency owing to an organic material, moisture or oxygen remaining in the reduced pressure vessel have taken place conventionally. It has been now found that the selection of the number of water molecules, the number of molecules of an organic gas and the number of oxygen molecules remaining in the reduced pressure vessel, in a relation with the number of molecules of a gas contributing the electric discharge allows the reduction of the adverse effect by the above-mentioned remaining gas. Specifically, the selection of the number of molecules of the above electric discharge gas being about ten times that of the above-mentioned remaining gas or more can reduce the adverse effect by the above-mentioned remaining gas.
摘要翻译：对于具有密封在其中的放电气体的减压容器的真空管，常规地发生诸如由于有机材料引起的排出效率降低，残留在减压容器中的水分或氧气的问题。现在已经发现，选择水分子的数量，有机气体的分子数和残留在减压容器中的氧分子的数量与导致电气的气体的分子数的关系放电允许通过上述剩余气体减少不利影响。具体而言，选择上述放电气体的分子数为上述剩余气体的10倍以上的分子数量，可以减少上述剩余气体的不利影响。

9. 发明申请

US20120261802A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120261802A1
公开(公告)日：2012-10-18
申请号：US13529574
申请日：2012-06-21
申请人： Tadahiro OHMI , Akihiro MORIMOTO
发明人： Tadahiro OHMI , Akihiro MORIMOTO
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L29/7813 , H01L21/84 , H01L27/12 , H01L29/045 , H01L29/41741 , H01L29/456 , H01L29/66734 , H01L29/732 , H01L29/7397 , H01L29/74 , H01L29/744 , H01L29/78603 , H01L2924/0002 , H05K1/053 , H01L2924/00
摘要： As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.
摘要翻译：作为半导体装置的基板，使用金属基板，金属基板由第一金属制的金属基体和由覆盖金属基体的第二金属构成的连接金属层构成。基板具有其中在连接金属层上设置防止第一金属扩散的扩散防止层的结构。

10. 发明申请

US20120187499A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120187499A1
公开(公告)日：2012-07-26
申请号：US13079431
申请日：2011-04-04
申请人： Tadahiro OHMI , Hiroaki Tanaka
发明人： Tadahiro OHMI , Hiroaki Tanaka
IPC分类号： H01L27/092
CPC分类号： H01L21/823418 , H01L21/823814 , H01L21/84 , H01L27/1203
摘要： This invention provides a technique advantageous to improve the operating speed of an integrated circuit. In a semiconductor device in which an n-type transistor and a p-type transistor are formed on the (551) plane of silicon, the thickness of a silicide layer which is in contact with a diffusion region of the n-type transistor is smaller than that of a silicide layer which is in contact with a diffusion region of the p-type transistor.
摘要翻译：本发明提供了有利于提高集成电路的操作速度的技术。在硅的（551）面形成有n型晶体管和p型晶体管的半导体器件中，与n型晶体管的扩散区域接触的硅化物层的厚度较小比与p型晶体管的扩散区域接触的硅化物层的情况相同。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式