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1. 发明申请

US20020146050A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20020146050A1
公开(公告)日：2002-10-10
申请号：US09828144
申请日：2001-04-09
申请人： THE FURUKAWA ELECTRIC Co., Ltd.
发明人： Norihiro Iwai , Masaki Funabashi , Toshikazu Mukaihara , Akihiko Kasukawa
IPC分类号： H01S005/00
CPC分类号： H01S5/12 , H01S5/1231
摘要： A semiconductor laser device comprising a substrate, a resonator overlying said substrate, a waveguide overlying said substrate and optically coupled to said resonator, and a diffraction grating formed on said resonator or said waveguide, said diffraction grating including slits or grooves formed on an Al-oxidized region of an Al-containing oxidized semiconductor layer, said Al-oxidized region being formed by selectively oxidizing Al in said Al-containing oxidized semiconductor layer. In the present invention, the difference between the refractive indices of the layer having the embedded grating and the Al oxide layer becomes larger to increase the coupling constant between laser beams and the grating. The decrease of the cavity length can increase the number of the devices obtainable from a single wafer.
摘要翻译：一种半导体激光器件，包括衬底，覆盖所述衬底的谐振器，覆盖所述衬底并光学耦合到所述谐振器的波导和形成在所述谐振器或所述波导上的衍射光栅，所述衍射光栅包括形成在Al- 所述Al氧化区域通过在所述含Al氧化物半导体层中选择性氧化Al而形成。在本发明中，具有嵌入光栅的层和Al氧化物层的折射率之间的差异变大，以增加激光束与光栅之间的耦合常数。腔长度的减小可以增加从单个晶片获得的器件的数量。

2. 发明申请

US20030053169A1 Optical transmitter, WDM optical transmission device and optical module 审中-公开
标题翻译：光发射机，WDM光传输设备和光模块
公开(公告)号：US20030053169A1
公开(公告)日：2003-03-20
申请号：US10163529
申请日：2002-06-07
申请人： THE FURUKAWA ELECTRIC CO., LTD.
发明人： Hideyuki Nasu , Takehiko Nomura , Toshikazu Mukaihara
IPC分类号： H04J014/02 , H04B010/04
CPC分类号： H04B10/506 , H04B10/572
摘要： The present invention provides an optical module having a light-emitting device for outputting a laser beam, a first temperature sensor disposed in proximity to the light-emitting device for sensing the temperature in the light-emitting device, a first temperature adjustment unit for adjusting the temperature in the light-emitting device, a wavelength monitor for receiving and monitoring the laser beam from the light-emitting device after passed through an optical filter, a second temperature sensor disposed in the wavelength monitor for sensing the temperature in the wavelength monitor, a second temperature adjustment unit for adjusting the temperature in the wavelength monitor, and a third temperature sensor disposed directly in or in proximity to the optical filter for sensing the temperature in the optical filter.
摘要翻译：本发明提供一种具有输出激光束的发光装置的光学模块，设置在发光装置附近的用于感测发光装置的温度的第一温度传感器，第一温度调节单元，用于调整发光装置中的温度，用于接收和监视通过滤光器之后的来自发光装置的激光束的波长监视器，设置在波长监视器中用于感测波长监视器中的温度的第二温度传感器，用于调节波长监视器中的温度的第二温度调节单元，以及直接设置在滤光器中或附近的第三温度传感器，用于感测滤光器中的温度。

3. 发明申请

US20010048111A1 Distributed feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件
公开(公告)号：US20010048111A1
公开(公告)日：2001-12-06
申请号：US09874278
申请日：2001-06-06
申请人： THE FURUKAWA ELECTRIC CO. , LTD.
发明人： Toshikazu Mukaihara , Hitoshi Shimizu , Masaki Funabashi , Akihiko Kasukawa
IPC分类号： H01L027/15 , H01L031/12 , H01L033/00
CPC分类号： H01S5/3235 , H01S5/12 , H01S5/1228 , H01S5/1231 , H01S5/32366 , H01S5/32391
摘要： A DFB semiconductor laser device including: a semiconductor substrate; and an active layer and a diffraction grating overlying the semiconductor substrate, the diffraction grating having a composition of GaInNAs(Sb) and absorbing light having a laser emission wavelength of the active layer. The DFB semiconductor laser device having a higher SMSR can be provided which stably operates in a wider range of injection current by proving the diffraction grating formed by the GaInNAs(Sb) having the composition for efficiently absorbing light which has the laser emission wavelength of the active layer.
摘要翻译：一种DFB半导体激光器件，包括：半导体衬底; 以及覆盖半导体衬底的有源层和衍射光栅，所述衍射光栅具有GaInNA（Sb）的组成并吸收具有有源层的激光发射波长的光。可以提供具有更高SMSR的DFB半导体激光器件，其通过证明由具有有效吸收具有激活的激光发射波长的光的组成的GaInNA（Sb）形成的衍射光栅，在更宽的注入电流范围内稳定地操作层。

4. 发明申请

US20020136253A1 Semiconductor laser device and method for fabricating same 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20020136253A1
公开(公告)日：2002-09-26
申请号：US09811454
申请日：2001-03-20
申请人： THE FURUKAWA ELECTRIC Co., Ltd.
发明人： Norihiro Iwai , Hitoshi Shimizu , Toshikazu Mukaihara , Akihiko Kasukawa
IPC分类号： H01S005/00
CPC分类号： B82Y20/00 , H01S5/2215 , H01S5/2228 , H01S5/2231 , H01S5/2275 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser device including an InP-based substrate, and a laser structure overlying said InP-based substrate and configured to form a ridge stripe, said laser structure having a plurality of compound semiconductor layers including at least one selectively-oxidized layer forming a current confinement structure, said selectively-oxidized layer including a pair of Al-oxidized peripheral areas and a non-oxidized central area sandwiched therebetween and forming a current path for said laser structure. The semiconductor laser device has a reduced threshold current and excellent lasing characteristics by the function of the oxidized layer or a current blocking layer.
摘要翻译：一种包括基于InP的衬底和覆盖所述基于InP的衬底并被构造成形成脊条的激光器结构的半导体激光器件，所述激光器结构具有多个化合物半导体层，所述化合物半导体层包括形成电流的至少一个选择性氧化层所述选择性氧化层包括一对Al氧化的外围区域和夹在其间的非氧化中心区域，并形成用于所述激光结构的电流路径。半导体激光器件通过氧化层或电流阻挡层的功能具有降低的阈值电流和优异的激光特性。

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