专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11908700B2 Method for manufacturing semiconductor structure 有权
公开(公告)号：US11908700B2
公开(公告)日：2024-02-20
申请号：US17816374
申请日：2022-07-29
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Nai-Han Cheng , Chi-Ming Yang
IPC分类号： H01L21/3065 , H01J37/305 , H01J37/317 , H01J37/32
CPC分类号： H01L21/3065 , H01J37/3053 , H01J37/3056 , H01J37/317 , H01J37/3172 , H01J37/32412
摘要： In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes the following operations. A substrate including a first atom and a second atom is provided. An etchant is dispatched from an ionizer. A compound is formed over the substrate by bonding the first atom with the etchant. A particle is released from an implanter. The compound is removed by bombarding the compound with the particle having an energy smaller than a bonding energy between the first atom and the second atom, wherein the particle is different from the etchant.

2. 发明授权

US09218938B2 Beam monitoring device, method, and system 有权
标题翻译：光束监测装置，方法和系统
公开(公告)号：US09218938B2
公开(公告)日：2015-12-22
申请号：US14317650
申请日：2014-06-27
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Nai-Han Cheng
IPC分类号： H01J37/244 , H01J37/317
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/024 , H01J2237/24405 , H01J2237/24528 , H01J2237/24542
摘要： A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.
摘要翻译：公开了一种光束监测装置，方法和系统。示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 2D轮廓仪的多个法拉第以一个方向偏移的图案排列。 1D轮廓仪耦合到2D轮廓仪的第一端并延伸超过2D轮廓仪的两个相邻的外边缘。光束监视装置还包括控制臂。控制臂可操作以便于沿着该方向的光束监视装置的移动。

3. 发明授权

US11482422B2 Method for manufacturing semiconductor structure 有权
公开(公告)号：US11482422B2
公开(公告)日：2022-10-25
申请号：US17008162
申请日：2020-08-31
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Nai-Han Cheng , Chi-Ming Yang
IPC分类号： H01L21/3065 , H01J37/305 , H01J37/317 , H01J37/32
摘要： In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes providing a substrate including a first atom and a second atom; forming a compound over the substrate by bonding the first atom with a ionized etchant; and removing the compound from the substrate by bombarding the compounds with a charged particle having a bombarding energy smaller than a bonding energy between the first atom and the second atom, wherein the charged particle and the ionized etchant include different ions.

4. 发明授权

US09929045B2 Defect inspection and repairing method and associated system and non-transitory computer readable medium 有权
公开(公告)号：US09929045B2
公开(公告)日：2018-03-27
申请号：US15210065
申请日：2016-07-14
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Nai-Han Cheng , Chi-Ming Yang
IPC分类号： G06F17/50 , G06F19/00 , G21K5/10 , G06K9/00 , H01L21/00 , H01L21/768 , H01L21/66 , H01L25/00 , H01L21/67
CPC分类号： H01L21/76894 , G06F17/5004 , G06F19/00 , G06F2217/12 , G06K9/00 , G06K9/2018 , G06K9/6284 , G06T7/0006 , G06T2207/10056 , G06T2207/30148 , G21K5/10 , H01L21/67138 , H01L21/67288 , H01L22/12 , H01L22/20 , H01L22/22 , H01L25/50
摘要： A defect inspection and repairing method is disclosed. The method includes: providing a wafer including a semiconductor chip disposed on a surface of the wafer; disposing a layer over the semiconductor chip; obtaining a scanned image of the disposed layer; performing an image analysis upon the scanned image to obtain a defect information; and generating a recipe of a beam according to the defect information, wherein the beam is configured to apply on the disposed layer. Associated system and non-transitory computer-readable medium are also disclosed.

5. 发明授权

US09892954B2 Wafer processing system using multi-zone chuck 有权
公开(公告)号：US09892954B2
公开(公告)日：2018-02-13
申请号：US14220708
申请日：2014-03-20
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Nai-Han Cheng , Chi-Ming Yang , You-Hua Chou , Kuo-Sheng Chuang , Chin-Hsiang Lin
IPC分类号： H01L21/67 , H01L21/683 , B05C11/00 , C23C16/458 , C23C14/50 , H01L21/687 , C23C14/54 , C23C16/52
CPC分类号： H01L21/68785 , C23C14/50 , C23C14/54 , C23C16/4582 , C23C16/52 , H01L21/67098 , H01L21/67288 , H01L21/6831 , Y10T29/49998
摘要： A wafer processing system includes at least one metrology chamber, a process chamber, and a controller. The at least one metrology chamber is configured to measure a thickness of a first layer on a back side of a wafer. The process chamber is configured to perform a treatment on a front side of the wafer. The front side is opposite the back side. The process chamber includes therein a multi-zone chuck. The multi-zone chuck is configured to support the back side of the wafer. The multi-zone chuck has a plurality of zones with controllable clamping forces for securing the wafer to the multi-zone chuck. The controller is coupled to the metrology chamber and the multi-zone chuck. The controller is configured to control the clamping forces in the corresponding zones in accordance with measured values of the thickness of the first layer in the corresponding zones.

6. 发明申请

US20140306119A1 Beam Monitoring Device, Method, and System 有权
标题翻译：光束监测装置，方法和系统
公开(公告)号：US20140306119A1
公开(公告)日：2014-10-16
申请号：US14317650
申请日：2014-06-27
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Chih-Hong Hwang , Chun-Lin Chang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01J37/244
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/024 , H01J2237/24405 , H01J2237/24528 , H01J2237/24542
摘要： A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.
摘要翻译：公开了一种光束监测装置，方法和系统。示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 2D轮廓仪的多个法拉第以一个方向偏移的图案排列。 1D轮廓仪耦合到2D轮廓仪的第一端并延伸超过2D轮廓仪的两个相邻的外边缘。光束监视装置还包括控制臂。控制臂可操作以便于沿着该方向的光束监视装置的移动。

7. 发明申请

US20130280823A1 Apparatus for Monitoring Ion Implantation 审中-公开
标题翻译：监测离子注入的装置
公开(公告)号：US20130280823A1
公开(公告)日：2013-10-24
申请号：US13918731
申请日：2013-06-14
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Lin Chang , Chih-Hong Hwang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01L21/66
CPC分类号： H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
摘要： An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second senor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second senor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.
摘要翻译：用于监测晶片的离子分布的装置包括第一传感器和传感器。将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。控制器基于来自第一传感器和第二传感器的检测信号确定晶片的每个区域的离子剂量。此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。

8. 发明授权

US10763117B2 Semiconductor manufacturing apparatus and method thereof 有权
公开(公告)号：US10763117B2
公开(公告)日：2020-09-01
申请号：US15892906
申请日：2018-02-09
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Nai-Han Cheng , Chi-Ming Yang
IPC分类号： H01L21/3065 , H01J37/305 , H01J37/317 , H01J37/32
摘要： In some embodiments of the present disclosure, a method of treating an atom on a substrate includes an operation of ionizing an etchant and the ionized etchant is a positively charged. The method includes an operation of attaching the ionized etchant on the atom. The method also includes an operation of bonding the atom with the etchant to from a compound. The method further includes sputtering the substrate with a charged particle and an operation of applying a bias on the water.

9. 发明授权

US09449889B2 Method for monitoring ion implantation 有权
标题翻译：监测离子注入的方法
公开(公告)号：US09449889B2
公开(公告)日：2016-09-20
申请号：US14684953
申请日：2015-04-13
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Lin Chang , Chih-Hong Hwang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01L21/66 , H01J37/244 , H01J37/317 , H01L21/265
CPC分类号： H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
摘要： A method comprises placing a wafer and a ring-shaped beam profiler on a wafer holder, wherein the ring-shaped beam profiler is adjacent to the wafer, moving a first sensor and a second sensor simultaneously with the wafer holder, receiving a first sensed signal and a second sensed signal from the first sensor and the second sensor respectively and adjusting an ion beam generated by an ion beam generator based upon the first sensed signal and the second sensed signal.
摘要翻译：一种方法包括将晶片和环形光束轮廓仪放置在晶片保持器上，其中环形光束轮廓仪邻近晶片，与晶片保持器同时移动第一传感器和第二传感器，接收第一感测信号以及分别来自第一传感器和第二传感器的第二检测信号，并且基于第一感测信号和第二感测信号调整由离子束发生器产生的离子束。

10. 发明申请

US20150069913A1 ION Implantation with Charge and Direction Control 有权
标题翻译：离子注入与充电和方向控制
公开(公告)号：US20150069913A1
公开(公告)日：2015-03-12
申请号：US14541314
申请日：2014-11-14
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chih-Hong Hwang , Chun-Lin Chang , Nai-Han Cheng , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J3/02 , H01J3/022 , H01J3/26 , H01J37/026 , H01J37/06 , H01J2237/0041 , H01J2237/31705
摘要： The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.
摘要翻译：本公开提供了控制电子发射的各种有利的方法和装置。本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。阳极设置在电子发射区域的上方，并且在阳极上设置电压组。施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。施加到阳极的第二电压提取产生的电子。施加到电压组的第三电压控制通过阳极提取的电子的方向。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式