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1. 发明申请

US20210354980A1 BYPASS STRUCTURE 有权
公开(公告)号：US20210354980A1
公开(公告)日：2021-11-18
申请号：US17388352
申请日：2021-07-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Eason Hsieh , Fei-Lung Lai , Kuei-Sung Chang
IPC分类号： B81B7/00 , H01L23/538 , B81C1/00
摘要： An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.

2. 发明授权

US10961115B2 Semiconductor structure and manufacturing method thereof 有权
公开(公告)号：US10961115B2
公开(公告)日：2021-03-30
申请号：US16249634
申请日：2019-01-16
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Kuei-Sung Chang
IPC分类号： B81B7/00 , B81B7/02 , B81C1/00 , H01L23/00
摘要： A semiconductor structure includes a first substrate; a heater surrounded by the first substrate; a pressure adjusting material disposed over the first substrate and adjacent to the heater; a second substrate disposed over the first substrate; and a cavity enclosed by the first substrate and the second substrate, wherein the pressure adjusting material is disposed within the cavity.

3. 发明授权

US09266724B2 Method for handling a thin substrate and for substrate capping 有权
标题翻译：处理薄基板和基板封盖的方法
公开(公告)号：US09266724B2
公开(公告)日：2016-02-23
申请号：US14330210
申请日：2014-07-14
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuei-Sung Chang , Yi Heng Tsai
IPC分类号： B81C1/00 , H01L21/683
CPC分类号： B81C1/00539 , B81C1/00269 , B81C1/00634 , B81C2201/0194 , B81C2203/0127 , H01L21/6835 , H01L2221/68318 , H01L2221/68331 , H01L2221/68381
摘要： An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.
摘要翻译：实施例是一种粘合方法。该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后，将覆盖衬底粘合到活性衬底上。手柄基板具有穿过其中的开口。该方法还包括从封盖基板上移除手柄基板。除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料，使得封盖基板通过接合材料结合到手柄基板。可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。

4. 发明授权

US08878355B2 Semiconductor bonding structure and process 有权
标题翻译：半导体结合结构和工艺
公开(公告)号：US08878355B2
公开(公告)日：2014-11-04
申请号：US13660374
申请日：2012-10-25
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuei-Sung Chang , Nien-Tsung Tsai , Ting-Hau Wu , Yi Heng Tsai
IPC分类号： H01L23/48 , H01L23/52 , H01L23/02 , H01L23/22 , H01L23/24
CPC分类号： H01L24/29 , H01L24/05 , H01L24/32 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/05082 , H01L2224/26145 , H01L2224/2745 , H01L2224/29011 , H01L2224/29012 , H01L2224/29013 , H01L2224/29036 , H01L2224/29078 , H01L2224/291 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29193 , H01L2224/32506 , H01L2224/83097 , H01L2224/83193 , H01L2224/83194 , H01L2224/83203 , H01L2224/83805 , H01L2225/06513 , H01L2924/01013 , H01L2924/01014 , H01L2924/01079 , H01L2924/01322 , H01L2924/00014 , H01L2924/01032 , H01L2924/00012
摘要： A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material.
摘要翻译：提供一种用于接合半导体器件的系统和方法。一个实施方案包括通过以栅格图案提供其中一种反应物的附加材料来停止共晶粘合材料的流动，使得当共晶材料流入附加材料时，附加材料将改变流动共晶材料的组成并使材料固化，从而停止流动。其他实施例提供了额外的布局以将附加材料放入流动共晶材料的路径中。

5. 发明授权

US10541627B2 MEMS structure and method of forming same 有权
公开(公告)号：US10541627B2
公开(公告)日：2020-01-21
申请号：US15859130
申请日：2017-12-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
IPC分类号： G01P15/125 , H02N1/00 , B81B3/00 , G01P15/08
摘要： A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15° measured in air.

6. 发明授权

US10071905B2 Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same 有权
公开(公告)号：US10071905B2
公开(公告)日：2018-09-11
申请号：US15289794
申请日：2016-10-10
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chia-Hua Chu , Kuei-Sung Chang , Te-Hao Lee
IPC分类号： B81B7/00 , H01L21/768 , B81C1/00 , B82Y30/00
CPC分类号： B81B7/007 , B81B2207/07 , B81B2207/095 , B81C1/00269 , B81C2203/0109 , B81C2203/036 , B82Y30/00 , H01L21/76898
摘要： The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures.

7. 发明申请

US20180145612A1 MEMS Structure and Method of Forming Same 审中-公开
公开(公告)号：US20180145612A1
公开(公告)日：2018-05-24
申请号：US15859130
申请日：2017-12-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
IPC分类号： H02N1/00 , B81B3/00 , G01P15/125 , G01P15/08
CPC分类号： H02N1/006 , B81B3/0005 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/125 , G01P2015/0871 , H02N1/00 , Y10T29/49002
摘要： A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15° measured in air.

8. 发明申请

US20170166435A1 Semiconductor Devices with Moving Members and Methods for Making the Same 审中-公开
公开(公告)号：US20170166435A1
公开(公告)日：2017-06-15
申请号：US15441791
申请日：2017-02-24
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/0005 , B81B3/001 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81B2207/092 , B81B2207/095 , B81B2207/096 , B81C1/00269 , B81C1/00579 , B81C2201/0111 , B81C2201/014 , B81C2201/0176 , B81C2203/0118 , B81C2203/019
摘要： A method for forming a MEMS structure includes forming, on a MEMS substrate, an interconnect structure having conductive lines and a first conductive plug of a semiconductor material, forming an etch stop layer on the interconnect structure, forming a dielectric layer over the etch stop layer, bonding a silicon substrate over the dielectric layer, forming a second and third conductive plugs of the semiconductor material in the silicon substrate, wherein the second conductive plug is configured to be electrically coupled with the first conductive plug and third conductive plug is configured to function as an anti-stiction bump, forming a MEMS device electrically coupled with the second conductive feature, and forming a bonding pad on the silicon substrate and surrounded by the second conductive plug.

9. 发明授权

US09293431B2 Integrated semiconductor device and wafer level method of fabricating the same 有权
标题翻译：集成半导体器件及其制造方法
公开(公告)号：US09293431B2
公开(公告)日：2016-03-22
申请号：US14551874
申请日：2014-11-24
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuei-Sung Chang , Chun-wen Cheng , Alexander Kalnitsky , Chia-Hua Chu
IPC分类号： H01L23/48 , H01L23/00 , H01L25/065 , H01L23/64 , H01L25/16 , H01L25/00 , H01L21/768
CPC分类号： H01L24/09 , H01L21/76898 , H01L23/481 , H01L23/64 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/24 , H01L24/80 , H01L24/81 , H01L24/82 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L25/16 , H01L25/50 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/08145 , H01L2224/13022 , H01L2224/13124 , H01L2224/13147 , H01L2224/24011 , H01L2224/24051 , H01L2224/24105 , H01L2224/24145 , H01L2224/80896 , H01L2224/81 , H01L2224/821 , H01L2224/9202 , H01L2224/9212 , H01L2225/06513 , H01L2225/06541 , H01L2225/06544 , H01L2225/06565 , H01L2924/00014 , H01L2924/01322 , H01L2924/1205 , H01L2924/1305 , H01L2924/13091 , H01L2924/15787 , H01L2924/00 , H01L2224/82 , H05K3/4661 , H01L2224/05552 , H01L2224/8203 , H01L2224/80001
摘要： The present disclosure provides one embodiment of a stacked semiconductor device. The stacked semiconductor device includes a first substrate; a first bond pad over the first substrate; a second substrate including a second electrical device fabricated thereon; a second bond pad over the second electrical device over the second substrate, the second bond pad electrically connecting to the second electrical device; a second insulation layer over the second bond pad having a top surface, the second insulation layer being bonded toward the first bond pad of the first substrate; and a through-substrate-via (“TSV”) extending from a surface opposite to the first bond pad through the first substrate and through the top surface of the second insulation layer to the second bond pad.
摘要翻译：本公开提供了堆叠半导体器件的一个实施例。叠层半导体器件包括第一衬底; 第一衬底上的第一接合焊盘; 第二基板，包括在其上制造的第二电气装置; 在所述第二基板上方的所述第二电气装置上的第二接合焊盘，所述第二接合焊盘电连接到所述第二电气装置; 所述第二接合焊盘上的第二绝缘层具有顶表面，所述第二绝缘层朝向所述第一基板的所述第一接合焊盘接合; 以及从第一接合焊盘相反的表面穿过第一基板延伸并穿过第二绝缘层的顶表面延伸到第二接合焊盘的贯通基板通孔（“TSV”）。

10. 发明申请

US20140361412A1 Cavity Structure Using Patterned Sacrificial Layer 有权
标题翻译：使用图案牺牲层的腔结构
公开(公告)号：US20140361412A1
公开(公告)日：2014-12-11
申请号：US13911594
申请日：2013-06-06
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuei-Sung Chang , Yi Heng Tsai
IPC分类号： H01L21/308 , H01L29/06
CPC分类号： H01L21/0337 , B81B2203/0315 , B81C1/00047
摘要： A method includes forming a sacrificial layer over a bottom substrate. The sacrificial layer is patterned based on a desired etching distance. A top layer is formed over the sacrificial layer. At least one release hole is formed through the top layer. The sacrificial layer is etched through the at least one release hole.
摘要翻译：一种方法包括在底部基底上形成牺牲层。基于期望的蚀刻距离对牺牲层进行构图。在牺牲层上形成顶层。通过顶层形成至少一个释放孔。牺牲层通过至少一个释放孔被蚀刻。

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