专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

US20240270565A1 COMPOSITE SPRING STRUCTURE TO REINFORCE MECHANICAL ROBUSTNESS OF A MEMS DEVICE 审中-公开
公开(公告)号：US20240270565A1
公开(公告)日：2024-08-15
申请号：US18642889
申请日：2024-04-23
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuei-Sung Chang , Shang-Ying Tsai , Wei-Jhih Mao
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/0054 , B81C1/0019 , B81B2203/0163 , B81C2201/0125 , B81C2201/0132
摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure comprising a spring structure. A first substrate underlies a second substrate. The first and second substrates at least partially define a cavity. A microelectromechanical systems (MEMS) component is arranged in the cavity. The spring structure is disposed between a region of the second substrate and the MEMS component. The spring structure comprises a first layer and a second layer. The first layer continuously extends along a first vertical surface of the second layer.

2. 发明授权

US11993510B2 Composite spring structure to reinforce mechanical robustness of a MEMS device 有权
公开(公告)号：US11993510B2
公开(公告)日：2024-05-28
申请号：US17840936
申请日：2022-06-15
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuei-Sung Chang , Shang-Ying Tsai , Wei-Jhih Mao
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/0054 , B81C1/0019 , B81B2203/0163 , B81C2201/0125 , B81C2201/0132
摘要： Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including a composite spring. A first substrate underlies a second substrate. A third substrate overlies the second substrate. The first, second, and third substrates at least partially define a cavity. The second substrate comprises a moveable mass in the cavity and between the first and third substrates. The composite spring extends from a peripheral region of the second substrate to the moveable mass. The composite spring is configured to suspend the moveable mass in the cavity. The composite spring includes a first spring layer comprising a first crystal orientation, and a second spring layer comprising a second crystal orientation different than the first crystal orientation.

3. 发明公开

US20230257256A1 STOPPER BUMP STRUCTURES FOR MEMS DEVICE 审中-公开
公开(公告)号：US20230257256A1
公开(公告)日：2023-08-17
申请号：US17690768
申请日：2022-03-09
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Wei-Jhih Mao , Shang-Ying Tsai , Kuei-Sung Chang , Chun-Wen Cheng
IPC分类号： B81B3/00 , B81B7/00
CPC分类号： B81B3/0051 , B81B7/0016 , B81B2207/03
摘要： Various embodiments of the present disclosure are directed towards an integrated chip (IC) including a substrate. A plurality of adhesive structures is disposed on the substrate. A microelectromechanical systems (MEMS) structure is disposed on the adhesive structures. The MEMS structure comprises a movable element disposed within a cavity. A first plurality of stopper bumps is disposed between the movable element and the substrate.

4. 发明申请

US20210354980A1 BYPASS STRUCTURE 有权
公开(公告)号：US20210354980A1
公开(公告)日：2021-11-18
申请号：US17388352
申请日：2021-07-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Eason Hsieh , Fei-Lung Lai , Kuei-Sung Chang
IPC分类号： B81B7/00 , H01L23/538 , B81C1/00
摘要： An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.

5. 发明授权

US10961115B2 Semiconductor structure and manufacturing method thereof 有权
公开(公告)号：US10961115B2
公开(公告)日：2021-03-30
申请号：US16249634
申请日：2019-01-16
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Kuei-Sung Chang
IPC分类号： B81B7/00 , B81B7/02 , B81C1/00 , H01L23/00
摘要： A semiconductor structure includes a first substrate; a heater surrounded by the first substrate; a pressure adjusting material disposed over the first substrate and adjacent to the heater; a second substrate disposed over the first substrate; and a cavity enclosed by the first substrate and the second substrate, wherein the pressure adjusting material is disposed within the cavity.

6. 发明授权

US09266724B2 Method for handling a thin substrate and for substrate capping 有权
标题翻译：处理薄基板和基板封盖的方法
公开(公告)号：US09266724B2
公开(公告)日：2016-02-23
申请号：US14330210
申请日：2014-07-14
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuei-Sung Chang , Yi Heng Tsai
IPC分类号： B81C1/00 , H01L21/683
CPC分类号： B81C1/00539 , B81C1/00269 , B81C1/00634 , B81C2201/0194 , B81C2203/0127 , H01L21/6835 , H01L2221/68318 , H01L2221/68331 , H01L2221/68381
摘要： An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.
摘要翻译：实施例是一种粘合方法。该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后，将覆盖衬底粘合到活性衬底上。手柄基板具有穿过其中的开口。该方法还包括从封盖基板上移除手柄基板。除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料，使得封盖基板通过接合材料结合到手柄基板。可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。

7. 发明授权

US08878355B2 Semiconductor bonding structure and process 有权
标题翻译：半导体结合结构和工艺
公开(公告)号：US08878355B2
公开(公告)日：2014-11-04
申请号：US13660374
申请日：2012-10-25
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuei-Sung Chang , Nien-Tsung Tsai , Ting-Hau Wu , Yi Heng Tsai
IPC分类号： H01L23/48 , H01L23/52 , H01L23/02 , H01L23/22 , H01L23/24
CPC分类号： H01L24/29 , H01L24/05 , H01L24/32 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/05082 , H01L2224/26145 , H01L2224/2745 , H01L2224/29011 , H01L2224/29012 , H01L2224/29013 , H01L2224/29036 , H01L2224/29078 , H01L2224/291 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29193 , H01L2224/32506 , H01L2224/83097 , H01L2224/83193 , H01L2224/83194 , H01L2224/83203 , H01L2224/83805 , H01L2225/06513 , H01L2924/01013 , H01L2924/01014 , H01L2924/01079 , H01L2924/01322 , H01L2924/00014 , H01L2924/01032 , H01L2924/00012
摘要： A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material.
摘要翻译：提供一种用于接合半导体器件的系统和方法。一个实施方案包括通过以栅格图案提供其中一种反应物的附加材料来停止共晶粘合材料的流动，使得当共晶材料流入附加材料时，附加材料将改变流动共晶材料的组成并使材料固化，从而停止流动。其他实施例提供了额外的布局以将附加材料放入流动共晶材料的路径中。

8. 发明授权

US10541627B2 MEMS structure and method of forming same 有权
公开(公告)号：US10541627B2
公开(公告)日：2020-01-21
申请号：US15859130
申请日：2017-12-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
IPC分类号： G01P15/125 , H02N1/00 , B81B3/00 , G01P15/08
摘要： A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15° measured in air.

9. 发明授权

US10071905B2 Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same 有权
公开(公告)号：US10071905B2
公开(公告)日：2018-09-11
申请号：US15289794
申请日：2016-10-10
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chia-Hua Chu , Kuei-Sung Chang , Te-Hao Lee
IPC分类号： B81B7/00 , H01L21/768 , B81C1/00 , B82Y30/00
CPC分类号： B81B7/007 , B81B2207/07 , B81B2207/095 , B81C1/00269 , B81C2203/0109 , B81C2203/036 , B82Y30/00 , H01L21/76898
摘要： The present disclosure includes micro-electro mechanical system (MEMS) structures and methods of forming the same. Substrates of the MEMS structures are bonded together by fusion bonding at high processing temperatures, which enables more complete removal of chemical species from the dielectric materials in the substrates prior to sealing cavities of the MEMS structures. Fusion bonding of MEMS structures reduces outgassing of chemical species and is compatible with the cavity formation process. The MEMS structures bonded by fusion bonding are mechanically stronger compared to eutectic bonding due to a higher bonding ratio. In addition, fusion bonding enables the formation of through substrate vias (TSVs) in the MEMS structures.

10. 发明申请

US20180145612A1 MEMS Structure and Method of Forming Same 审中-公开
公开(公告)号：US20180145612A1
公开(公告)日：2018-05-24
申请号：US15859130
申请日：2017-12-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
IPC分类号： H02N1/00 , B81B3/00 , G01P15/125 , G01P15/08
CPC分类号： H02N1/006 , B81B3/0005 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/125 , G01P2015/0871 , H02N1/00 , Y10T29/49002
摘要： A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15° measured in air.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式