专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110147749A1 TRANSFLECTIVE LIQUID CRYSTAL DISPLAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：转移液晶显示面板及其制造方法
公开(公告)号：US20110147749A1
公开(公告)日：2011-06-23
申请号：US12969543
申请日：2010-12-15
申请人： Sweehan J.H. Yang , Po-Sheng Shih , Chian-Chih Hsiao , Hsien-Tang Hu , Ting-Chung Liu
发明人： Sweehan J.H. Yang , Po-Sheng Shih , Chian-Chih Hsiao , Hsien-Tang Hu , Ting-Chung Liu
IPC分类号： H01L33/16 , H01L33/46
CPC分类号： G02F1/133555 , G02F2203/09 , H01L27/124
摘要： A method for manufacturing a transflective liquid crystal display panel includes providing an array substrate having a plurality of pixel regions, each of the pixel regions includes a device region, a transmission region and a reflection region defined therein; forming a first metal layer on the array substrate; patterning the first metal layer to simultaneously form a gate electrode in the device region and a plurality of metal bumps in the reflection region; forming a first insulating layer having a rough surface and covering the gate electrode and the metal bumps on the array substrate; forming a patterned semiconductor layer on the gate electrode; forming a reflective layer covering the first insulating layer and having a rough surface in the reflection region; and sequentially forming a patterned second insulating layer and a transparent pixel electrode on the array substrate.
摘要翻译：一种半透射反射型液晶显示面板的制造方法，其特征在于，具备具有多个像素区域的阵列基板，每个所述像素区域包括器件区域，透射区域和限定在其中的反射区域; 在阵列基板上形成第一金属层; 图案化第一金属层以在器件区域中同时形成栅电极和反射区域中的多个金属凸块; 形成具有粗糙表面并覆盖阵列基板上的栅电极和金属凸块的第一绝缘层; 在所述栅电极上形成图案化的半导体层; 形成覆盖所述第一绝缘层并且在所述反射区域中具有粗糙表面的反射层; 并且在阵列基板上依次形成图案化的第二绝缘层和透明像素电极。

2. 发明授权

US08440482B2 Transflective liquid crystal display panel and manufacturing method thereof 有权
标题翻译：半透射液晶显示面板及其制造方法
公开(公告)号：US08440482B2
公开(公告)日：2013-05-14
申请号：US12969543
申请日：2010-12-15
申请人： Sweehan J. H. Yang , Po-Sheng Shih , Chian-Chih Hsiao , Hsien-Tang Hu , Ting-Chung Liu
发明人： Sweehan J. H. Yang , Po-Sheng Shih , Chian-Chih Hsiao , Hsien-Tang Hu , Ting-Chung Liu
IPC分类号： H01L33/16 , H01L33/46
CPC分类号： G02F1/133555 , G02F2203/09 , H01L27/124
摘要： A method for manufacturing a transflective liquid crystal display panel includes providing an array substrate having a plurality of pixel regions, each of the pixel regions includes a device region, a transmission region and a reflection region defined therein; forming a first metal layer on the array substrate; patterning the first metal layer to simultaneously form a gate electrode in the device region and a plurality of metal bumps in the reflection region; forming a first insulating layer having a rough surface and covering the gate electrode and the metal bumps on the array substrate; forming a patterned semiconductor layer on the gate electrode; forming a reflective layer covering the first insulating layer and having a rough surface in the reflection region; and sequentially forming a patterned second insulating layer and a transparent pixel electrode on the array substrate.
摘要翻译：一种半透射反射型液晶显示面板的制造方法，其特征在于，具备具有多个像素区域的阵列基板，每个所述像素区域包括器件区域，透射区域和限定在其中的反射区域; 在阵列基板上形成第一金属层; 图案化第一金属层以在器件区域中同时形成栅电极和反射区域中的多个金属凸块; 形成具有粗糙表面并覆盖阵列基板上的栅电极和金属凸块的第一绝缘层; 在所述栅电极上形成图案化的半导体层; 形成覆盖所述第一绝缘层并且在所述反射区域中具有粗糙表面的反射层; 并且在阵列基板上依次形成图案化的第二绝缘层和透明像素电极。

3. 发明授权

US06953715B2 Method of controlling a capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor 有权
公开(公告)号：US06953715B2
公开(公告)日：2005-10-11
申请号：US10934014
申请日：2004-09-03
申请人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
发明人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/423 , H01L21/00
CPC分类号： H01L27/1248 , G02F1/136213 , H01L27/1255 , H01L29/42384
摘要： A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming an undoped amorphous silicon layer on a silicon nitride layer, ii) forming an etching mask on the undoped amorphous silicon layer, and iii) forming two doped amorphous silicon layers on portion of the undoped amorphous silicon layer and the etching mask, the two doped amorphous silicon layers being spaced apart and located on either side of the gate, wherein an etching selectivity ratio of the undpoed and doped amorphous silicon layers over the dielectric layer being not less than about 5.0.

4. 发明授权

US07791080B2 Image TFT array of a direct X-ray image sensor and method of fabricating the same 有权
标题翻译：直接X射线图像传感器的图像TFT阵列及其制造方法
公开(公告)号：US07791080B2
公开(公告)日：2010-09-07
申请号：US12251430
申请日：2008-10-14
申请人： Chian-Chih Hsiao , Chih-Chieh Lan
发明人： Chian-Chih Hsiao , Chih-Chieh Lan
IPC分类号： H01L29/04
CPC分类号： H01L27/14663 , H01L27/14603 , H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.
摘要翻译：制造直接X射线图像传感器的图像TFT阵列的方法包括：在基板上形成第一透明导电层; 形成包括从公共线突出的栅电极，公共线和公共电极的栅极线; 形成绝缘层; 在所述晶体管区域中的所述绝缘层上形成半导体岛; 形成用于所述公共电极的第一通孔; 形成数据线和源极和漏电极; 形成钝化层和穿过源电极的钝化层的第二通孔; 形成第二透明导电层作为顶部电极。绝缘层形成在第一透明导电层上，以在TFT结构形成之前用作电容器的电介质层，并且可以在较高温度下形成。

5. 发明授权

US06800510B2 Method of controlling storage capacitor's capacitance of thin film transistor liquid crystal display 有权
标题翻译：控制存储电容器薄膜晶体管液晶显示器电容的方法
公开(公告)号：US06800510B2
公开(公告)日：2004-10-05
申请号：US10289470
申请日：2002-11-06
申请人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
发明人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
IPC分类号： H01L2100
CPC分类号： H01L27/1248 , G02F1/136213 , H01L27/1255 , H01L29/42384
摘要： A method of controlling the capacitance of the TFT-LCD storage capacitor is provided. The gate dielectric layer of the TFT is composed of a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the amorphous silicon layer over the dielectric layer is not less than about 5.0. Therefore, the dielectric layer can be an etching stop layer when a doped and an undoped amorphous silicon layers are etched to form source/drain stacked layers or a conductive layer is etched to form a gate on the gate dielectric layer. Hence, the dielectric layer thickness can be controlled; thereby the capacitance of the storage capacitor can be controlled.
摘要翻译：提供了一种控制TFT-LCD存储电容器的电容的方法。 TFT的栅介质层由氮化硅层，电介质层和氮化硅层组成，非晶硅层在电介质层上的蚀刻选择性不小于约5.0。因此，当蚀刻掺杂的和未掺杂的非晶硅层以形成源极/漏极堆叠层时或者蚀刻导电层以在栅极介电层上形成栅极时，介电层可以是蚀刻停止层。因此，可以控制介电层厚度; 从而可以控制存储电容器的电容。

6. 发明授权

US07439544B2 Structure and manufacturing method of an image TFT array 有权
标题翻译：图像TFT阵列的结构和制造方法
公开(公告)号：US07439544B2
公开(公告)日：2008-10-21
申请号：US10907998
申请日：2005-04-25
申请人： Chin-Mao Lin , Kei-Hsiung Yang , Chian-Chih Hsiao
发明人： Chin-Mao Lin , Kei-Hsiung Yang , Chian-Chih Hsiao
IPC分类号： H01L27/14
CPC分类号： H01L27/14692 , H01L27/1255 , H01L27/1288 , H01L27/14658
摘要： The present invention provides a manufacturing method of an image TFT array, which includes providing a substrate including a thin film transistor region, a storage capacitor region, a pad region, and a common electrode region, forming a photoresist layer on the substrate, and performing a photolithographic and etching process by utilizing a half-tone mask to pattern the photoresist layer to define a position of a through hole on the storage capacitor region and form the photoresist layer of a first thickness on the thin film transistor region and the photoresist layer of a second thickness on the region between the thin film transistor region and the storage capacitor region, wherein the first thickness is greater than the second thickness.
摘要翻译：本发明提供了一种图像TFT阵列的制造方法，其包括提供包括薄膜晶体管区域，保持电容器区域，焊盘区域和公共电极区域的衬底，在衬底上形成光致抗蚀剂层，并且执行通过利用半色调掩模来对光致抗蚀剂层进行图案化以定义存储电容器区域上的通孔的位置并在薄膜晶体管区域和光致抗蚀剂层上形成第一厚度的光致抗蚀剂层的光刻和蚀刻工艺在薄膜晶体管区域和存储电容器区域之间的区域上的第二厚度，其中第一厚度大于第二厚度。

7. 发明授权

US07087469B2 Method of controlling a capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor 有权
标题翻译：控制薄膜晶体管液晶显示器（TFT-LCD）存储电容器的电容的方法
公开(公告)号：US07087469B2
公开(公告)日：2006-08-08
申请号：US10934242
申请日：2004-09-03
申请人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
发明人： Chih-Yu Peng , Wei-Chuan Lin , Chian-Chih Hsiao , Ta-Ko Chuang , Chun-Hung Chu , Chih-Lung Lin , Chin-Mao Lin
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , G02F1/136213 , H01L27/1255 , H01L29/42384
摘要： A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming a silicon island and a bottom electrode on the transparent substrate, the silicon island having an undoped region located on the central portion, and two doped regions respectively located on both sides, ii) forming a first silicon nitride layer on the transparent substrate, and iii) forming a stacked layer comprising a second silicon nitride layer and a conductive layer on the undoped region of the silicon island, and the first conductive layer of the stacked layer serving as a gate of a thin film transistor, wherein an etching selectivity ratio of the conductive layer over the dielectric layer is not less than about 5.0.
摘要翻译：公开了一种控制薄膜晶体管液晶显示器（TFT-LCD）存储电容器的电容的方法。在某些实施例中，该方法包括：i）在透明基底上形成硅岛和底部电极，硅岛具有位于中心部分上的未掺杂区域，以及分别位于两侧的两个掺杂区域，ii）形成第一氮化硅层，以及iii）在所述硅岛的未掺杂区域上形成包括第二氮化硅层和导电层的堆叠层，并且所述层叠层的第一导电层用作薄的栅极薄膜晶体管，其中导电层在电介质层上的蚀刻选择率不小于约5.0。

8. 发明申请

US20090032892A1 Image TFT array of a direct X-ray image sensor and method of fabricating the same 有权
标题翻译：直接X射线图像传感器的图像TFT阵列及其制造方法
公开(公告)号：US20090032892A1
公开(公告)日：2009-02-05
申请号：US12251430
申请日：2008-10-14
申请人： Chian-Chih Hsiao , Chih-Chieh Lan
发明人： Chian-Chih Hsiao , Chih-Chieh Lan
IPC分类号： H01L27/14
CPC分类号： H01L27/14663 , H01L27/14603 , H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.
摘要翻译：制造直接X射线图像传感器的图像TFT阵列的方法包括：在基板上形成第一透明导电层; 形成包括从公共线突出的栅电极，公共线和公共电极的栅极线; 形成绝缘层; 在晶体管区域的绝缘层上形成半导体岛; 形成用于所述公共电极的第一通孔; 形成数据线和源极和漏电极; 形成钝化层和穿过源电极的钝化层的第二通孔; 形成第二透明导电层作为顶部电极。绝缘层形成在第一透明导电层上，以在TFT结构形成之前用作电容器的电介质层，并且可以在较高温度下形成。

9. 发明授权

US07452782B2 Image TFT array of a direct X-ray image sensor and method of fabricating the same 有权
标题翻译：直接X射线图像传感器的图像TFT阵列及其制造方法
公开(公告)号：US07452782B2
公开(公告)日：2008-11-18
申请号：US11164402
申请日：2005-11-21
申请人： Chian-Chih Hsiao , Chih-Chieh Lan
发明人： Chian-Chih Hsiao , Chih-Chieh Lan
IPC分类号： H01L21/20
CPC分类号： H01L27/14663 , H01L27/14603 , H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.
摘要翻译：制造直接X射线图像传感器的图像TFT阵列的方法包括：在基板上形成第一透明导电层; 形成包括从公共线突出的栅电极，公共线和公共电极的栅极线; 形成绝缘层; 在晶体管区域的绝缘层上形成半导体岛; 形成用于所述公共电极的第一通孔; 形成数据线和源极和漏电极; 形成钝化层和穿过源电极的钝化层的第二通孔; 形成第二透明导电层作为顶部电极。绝缘层形成在第一透明导电层上，以在TFT结构形成之前用作电容器的电介质层，并且可以在较高温度下形成。

10. 发明申请

US20070114625A1 Image TFT array of a direct X-ray image sensor and method of fabricating the same 有权
标题翻译：直接X射线图像传感器的图像TFT阵列及其制造方法
公开(公告)号：US20070114625A1
公开(公告)日：2007-05-24
申请号：US11164402
申请日：2005-11-21
申请人： Chian-Chih Hsiao , Chih-Chieh Lan
发明人： Chian-Chih Hsiao , Chih-Chieh Lan
IPC分类号： H01L27/14
CPC分类号： H01L27/14663 , H01L27/14603 , H01L27/14609 , H01L27/14676 , H01L27/14692
摘要： A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature.
摘要翻译：制造直接X射线图像传感器的图像TFT阵列的方法包括：在基板上形成第一透明导电层; 形成包括从公共线突出的栅电极，公共线和公共电极的栅极线; 形成绝缘层; 在晶体管区域的绝缘层上形成半导体岛; 形成用于所述公共电极的第一通孔; 形成数据线和源极和漏电极; 形成钝化层和穿过源电极的钝化层的第二通孔; 形成第二透明导电层作为顶部电极。绝缘层形成在第一透明导电层上，以在TFT结构形成之前用作电容器的电介质层，并且可以在较高温度下形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式