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1. 发明授权

US08242502B2 TFT array substrate having conductive layers containing molybdenum nitride and copper alloy 有权
标题翻译： TFT阵列基板，其具有含有氮化钼和铜合金的导电层
公开(公告)号：US08242502B2
公开(公告)日：2012-08-14
申请号：US12581438
申请日：2009-10-19
申请人： Hsien Tang Hu , Chien Chih Hsiao , Chih Hung Tsai
发明人： Hsien Tang Hu , Chien Chih Hsiao , Chih Hung Tsai
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/76 , H01L31/112 , H01L29/15 , H01L31/062 , H01L31/113
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458
摘要： A TFT array substrate includes a substrate, at least one gate line and gate electrode, a gate insulating layer, and at least one channel component, source electrode, drain electrode and data line. The gate line and gate electrode are disposed on the substrate, wherein both of the gate line and gate electrode have first and second conductive layers, the first conductive layer is formed on the substrate, the first conductive layer contains molybdenum nitride, the second conductive layer is formed on the first conductive layer, and the second conductive layer contains copper. The gate insulating layer is disposed on the gate line, gate electrode and the substrate. The channel component is disposed on the gate insulating layer. The source electrode and drain electrode are disposed on the channel component, and data line is disposed on the gate insulating layer.
摘要翻译： TFT阵列基板包括基板，至少一个栅极线和栅极电极，栅极绝缘层以及至少一个沟道部件，源电极，漏电极和数据线。栅极线和栅电极设置在基板上，其中栅极线和栅电极都具有第一和第二导电层，第一导电层形成在基板上，第一导电层含有氮化钼，第二导电层形成在第一导电层上，第二导电层含有铜。栅极绝缘层设置在栅极线，栅极电极和基板上。沟道部件设置在栅极绝缘层上。源电极和漏极设置在沟道部件上，并且数据线设置在栅极绝缘层上。

2. 发明申请

US20110147749A1 TRANSFLECTIVE LIQUID CRYSTAL DISPLAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：转移液晶显示面板及其制造方法
公开(公告)号：US20110147749A1
公开(公告)日：2011-06-23
申请号：US12969543
申请日：2010-12-15
申请人： Sweehan J.H. Yang , Po-Sheng Shih , Chian-Chih Hsiao , Hsien-Tang Hu , Ting-Chung Liu
发明人： Sweehan J.H. Yang , Po-Sheng Shih , Chian-Chih Hsiao , Hsien-Tang Hu , Ting-Chung Liu
IPC分类号： H01L33/16 , H01L33/46
CPC分类号： G02F1/133555 , G02F2203/09 , H01L27/124
摘要： A method for manufacturing a transflective liquid crystal display panel includes providing an array substrate having a plurality of pixel regions, each of the pixel regions includes a device region, a transmission region and a reflection region defined therein; forming a first metal layer on the array substrate; patterning the first metal layer to simultaneously form a gate electrode in the device region and a plurality of metal bumps in the reflection region; forming a first insulating layer having a rough surface and covering the gate electrode and the metal bumps on the array substrate; forming a patterned semiconductor layer on the gate electrode; forming a reflective layer covering the first insulating layer and having a rough surface in the reflection region; and sequentially forming a patterned second insulating layer and a transparent pixel electrode on the array substrate.
摘要翻译：一种半透射反射型液晶显示面板的制造方法，其特征在于，具备具有多个像素区域的阵列基板，每个所述像素区域包括器件区域，透射区域和限定在其中的反射区域; 在阵列基板上形成第一金属层; 图案化第一金属层以在器件区域中同时形成栅电极和反射区域中的多个金属凸块; 形成具有粗糙表面并覆盖阵列基板上的栅电极和金属凸块的第一绝缘层; 在所述栅电极上形成图案化的半导体层; 形成覆盖所述第一绝缘层并且在所述反射区域中具有粗糙表面的反射层; 并且在阵列基板上依次形成图案化的第二绝缘层和透明像素电极。

3. 发明申请

US20120264260A1 TFT ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： TFT阵列基板及其制造方法
公开(公告)号：US20120264260A1
公开(公告)日：2012-10-18
申请号：US13527983
申请日：2012-06-20
申请人： Hsien Tang HU , Chien Chih HSIAO , Chih Hung TSAI
发明人： Hsien Tang HU , Chien Chih HSIAO , Chih Hung TSAI
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458
摘要： A TFT array substrate includes a substrate, at least one gate line and gate electrode, a gate insulating layer, and at least one channel component, source electrode, drain electrode and data line. The gate line and gate electrode are disposed on the substrate, wherein both of the gate line and gate electrode have first and second conductive layers, the first conductive layer is formed on the substrate, the first conductive layer contains molybdenum nitride , the second conductive layer is formed on the first conductive layer, and the second conductive layer contains copper. The gate insulating layer is disposed on the gate line, gate electrode and the substrate. The channel component is disposed on the gate insulating layer. The source electrode and drain electrode are disposed on the channel component, and data line is disposed on the gate insulating layer.
摘要翻译： TFT阵列基板包括基板，至少一个栅极线和栅极电极，栅极绝缘层以及至少一个沟道部件，源电极，漏电极和数据线。栅极线和栅电极设置在基板上，其中栅极线和栅电极都具有第一和第二导电层，第一导电层形成在基板上，第一导电层含有氮化钼，第二导电层形成在第一导电层上，第二导电层含有铜。栅极绝缘层设置在栅极线，栅极电极和基板上。沟道部件设置在栅极绝缘层上。源电极和漏极设置在沟道部件上，并且数据线设置在栅极绝缘层上。

4. 发明授权

US08501553B2 Method for manufacturing thin film transistor (TFT) array substrate 有权
标题翻译：制造薄膜晶体管（TFT）阵列基板的方法
公开(公告)号：US08501553B2
公开(公告)日：2013-08-06
申请号：US13527983
申请日：2012-06-20
申请人： Hsien Tang Hu , Chien Chih Hsiao , Chih Hung Tsai
发明人： Hsien Tang Hu , Chien Chih Hsiao , Chih Hung Tsai
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458
摘要： A TFT array substrate includes a substrate, at least one gate line and gate electrode, a gate insulating layer, and at least one channel component, source electrode, drain electrode and data line. The gate line and gate electrode are disposed on the substrate, wherein both of the gate line and gate electrode have first and second conductive layers, the first conductive layer is formed on the substrate, the first conductive layer contains molybdenum nitride , the second conductive layer is formed on the first conductive layer, and the second conductive layer contains copper. The gate insulating layer is disposed on the gate line, gate electrode and the substrate. The channel component is disposed on the gate insulating layer. The source electrode and drain electrode are disposed on the channel component, and data line is disposed on the gate insulating layer.
摘要翻译： TFT阵列基板包括基板，至少一个栅极线和栅极电极，栅极绝缘层以及至少一个沟道部件，源电极，漏电极和数据线。栅极线和栅电极设置在基板上，其中栅极线和栅电极都具有第一和第二导电层，第一导电层形成在基板上，第一导电层含有氮化钼，第二导电层形成在第一导电层上，第二导电层含有铜。栅极绝缘层设置在栅极线，栅电极和基板上。沟道部件设置在栅极绝缘层上。源电极和漏极设置在沟道部件上，并且数据线设置在栅极绝缘层上。

5. 发明授权

US08440482B2 Transflective liquid crystal display panel and manufacturing method thereof 有权
标题翻译：半透射液晶显示面板及其制造方法
公开(公告)号：US08440482B2
公开(公告)日：2013-05-14
申请号：US12969543
申请日：2010-12-15
申请人： Sweehan J. H. Yang , Po-Sheng Shih , Chian-Chih Hsiao , Hsien-Tang Hu , Ting-Chung Liu
发明人： Sweehan J. H. Yang , Po-Sheng Shih , Chian-Chih Hsiao , Hsien-Tang Hu , Ting-Chung Liu
IPC分类号： H01L33/16 , H01L33/46
CPC分类号： G02F1/133555 , G02F2203/09 , H01L27/124
摘要： A method for manufacturing a transflective liquid crystal display panel includes providing an array substrate having a plurality of pixel regions, each of the pixel regions includes a device region, a transmission region and a reflection region defined therein; forming a first metal layer on the array substrate; patterning the first metal layer to simultaneously form a gate electrode in the device region and a plurality of metal bumps in the reflection region; forming a first insulating layer having a rough surface and covering the gate electrode and the metal bumps on the array substrate; forming a patterned semiconductor layer on the gate electrode; forming a reflective layer covering the first insulating layer and having a rough surface in the reflection region; and sequentially forming a patterned second insulating layer and a transparent pixel electrode on the array substrate.
摘要翻译：一种半透射反射型液晶显示面板的制造方法，其特征在于，具备具有多个像素区域的阵列基板，每个所述像素区域包括器件区域，透射区域和限定在其中的反射区域; 在阵列基板上形成第一金属层; 图案化第一金属层以在器件区域中同时形成栅电极和反射区域中的多个金属凸块; 形成具有粗糙表面并覆盖阵列基板上的栅电极和金属凸块的第一绝缘层; 在所述栅电极上形成图案化的半导体层; 形成覆盖所述第一绝缘层并且在所述反射区域中具有粗糙表面的反射层; 并且在阵列基板上依次形成图案化的第二绝缘层和透明像素电极。

6. 发明申请

US20100230676A1 TFT ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： TFT阵列基板及其制造方法
公开(公告)号：US20100230676A1
公开(公告)日：2010-09-16
申请号：US12581438
申请日：2009-10-19
申请人： Hsien Tang HU , Chien Chih Hsiao , Chih Hung Tsai
发明人： Hsien Tang HU , Chien Chih Hsiao , Chih Hung Tsai
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458
摘要： A TFT array substrate includes a substrate, at least one gate line and gate electrode, a gate insulating layer, and at least one channel component, source electrode, drain electrode and data line. The gate line and gate electrode are disposed on the substrate, wherein both of the gate line and gate electrode have first and second conductive layers, the first conductive layer is formed on the substrate, the first conductive layer contains molybdenum nitride, the second conductive layer is formed on the first conductive layer, and the second conductive layer contains copper. The gate insulating layer is disposed on the gate line, gate electrode and the substrate. The channel component is disposed on the gate insulating layer. The source electrode and drain electrode are disposed on the channel component, and data line is disposed on the gate insulating layer.
摘要翻译： TFT阵列基板包括基板，至少一个栅极线和栅极电极，栅极绝缘层以及至少一个沟道部件，源电极，漏电极和数据线。栅极线和栅电极设置在基板上，其中栅极线和栅电极都具有第一和第二导电层，第一导电层形成在基板上，第一导电层含有氮化钼，第二导电层形成在第一导电层上，第二导电层含有铜。栅极绝缘层设置在栅极线，栅电极和基板上。沟道部件设置在栅极绝缘层上。源电极和漏极设置在沟道部件上，并且数据线设置在栅极绝缘层上。

7. 发明授权

US08269751B2 Photo element and driving method thereof and liquid crystal display 有权
标题翻译：照片元件及其驱动方法和液晶显示器
公开(公告)号：US08269751B2
公开(公告)日：2012-09-18
申请号：US12626669
申请日：2009-11-26
申请人： Ting-Chung Liu , Po-Yang Chen , Hsien-Tang Hu , Chien-Chih Hsiau
发明人： Ting-Chung Liu , Po-Yang Chen , Hsien-Tang Hu , Chien-Chih Hsiau
IPC分类号： G06F3/042
CPC分类号： G06F3/0412 , G06F3/042
摘要： A photo element includes a photo thin film transistor (TFT), a switch thin film transistor, and a compensation thin film transistor. A bias line provides a bias voltage to the photo TFT. The photo TFT generates a photo-induced current under an illuminated environment. A first switch line provides a voltage to open the switch TFT, and thus the photo-induced current is read out through a readout line. A second switch line provides compensation current to open the compensation TFT. The compensation current applies a reverse-biased stress to the photo TFT; therefore the threshold voltage and sensitivity of the photo TFT can be maintained.
摘要翻译：光元件包括光薄膜晶体管（TFT），开关薄膜晶体管和补偿薄膜晶体管。偏置线为照相TFT提供偏置电压。照片TFT在照明环境下产生光感应电流。第一开关线提供电压以打开开关TFT，因此通过读出线读出光感应电流。第二个开关线提供补偿电流来打开补偿TFT。补偿电流对照相TFT施加反向偏置应力; 因此可以保持照片TFT的阈值电压和灵敏度。

8. 发明申请

US20100238140A1 Photo Element and Driving Method Thereof and Liquid Crystal Display 有权
标题翻译：照片元素及其驱动方法和液晶显示
公开(公告)号：US20100238140A1
公开(公告)日：2010-09-23
申请号：US12626669
申请日：2009-11-26
申请人： Ting-Chung Liu , Po-Yang Chen , Hsien-Tang Hu , Chien-Chih Hsiau
发明人： Ting-Chung Liu , Po-Yang Chen , Hsien-Tang Hu , Chien-Chih Hsiau
IPC分类号： G06F3/042
CPC分类号： G06F3/0412 , G06F3/042
摘要： A photo element includes a photo thin film transistor (TFT), a switch thin film transistor, and a compensation thin film transistor. A bias line provides a bias voltage to the photo TFT. The photo TFT generates a photo-induced current under an illuminated environment. A first switch line provides a voltage to open the switch TFT, and thus the photo-induced current is read out through a readout line. A second switch line provides compensation current to open the compensation TFT. The compensation current applies a reverse-biased stress to the photo TFT; therefore the threshold voltage and sensitivity of the photo TFT can be maintained.
摘要翻译：光元件包括光薄膜晶体管（TFT），开关薄膜晶体管和补偿薄膜晶体管。偏置线为照相TFT提供偏置电压。照片TFT在照明环境下产生光感应电流。第一开关线提供电压以打开开关TFT，因此通过读出线读出光感应电流。第二个开关线提供补偿电流来打开补偿TFT。补偿电流对照相TFT施加反向偏置应力; 因此可以保持照片TFT的阈值电压和灵敏度。

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