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1. 发明授权

US07789458B2 Structure of coupling portions of exterior parts 有权
标题翻译：外部零件的连接部分的结构
公开(公告)号：US07789458B2
公开(公告)日：2010-09-07
申请号：US12141494
申请日：2008-06-18
申请人： Susumu Suzuki , Nobuhiro Iwai , Taro Ikeda , Naoki Tanaka , Hiroyuki Okuyama , Michiaki Okabe , Tsuyoshi Iwasaki , Toru Mogi , Koji Ishimaru , Takashi Ashida
发明人： Susumu Suzuki , Nobuhiro Iwai , Taro Ikeda , Naoki Tanaka , Hiroyuki Okuyama , Michiaki Okabe , Tsuyoshi Iwasaki , Toru Mogi , Koji Ishimaru , Takashi Ashida
IPC分类号： B60N99/00
CPC分类号： B60Q1/0491 , B60Q1/0441 , B62D25/163
摘要： A structure to couple exterior components of a vehicle includes a first exterior component and a second exterior component located apart from the first exterior component, wherein the first exterior component comprises an upper protrusion configured to overlap the second exterior component, and wherein the first exterior component comprises a side protrusion configured to overlap the second exterior component. A method to couple exterior components of a vehicle includes providing a protrusion about at least a portion of a first exterior component, installing the first exterior component proximal to a second exterior component, overlapping the protrusion of the first exterior component about a at least a portion of the second exterior component, interposing an elastic member between a peripheral surface of the first exterior component and an edge of the second exterior component, and positioning the elastic member beneath the protrusion of the first exterior component.
摘要翻译：耦合车辆外部部件的结构包括第一外部部件和与第一外部部件分开的第二外部部件，其中第一外部部件包括被配置为与第二外部部件重叠的上部突起，并且其中第一外部部件包括配置成与第二外部部件重叠的侧部突起。耦合车辆外部部件的方法包括提供围绕第一外部部件的至少一部分的突出部，将第一外部部件安装在靠近第二外部部件的位置，与第一外部部件的突起重叠，至少部分在所述第二外部部件的外周表面和所述第二外部部件的边缘之间插入弹性部件，并且将所述弹性部件定位在所述第一外部部件的突出部下方。

2. 发明申请

US20080315625A1 STRUCTURE OF COUPLING PORTIONS OF EXTERIOR PARTS 有权
标题翻译：外部部件联接部分的结构
公开(公告)号：US20080315625A1
公开(公告)日：2008-12-25
申请号：US12141494
申请日：2008-06-18
申请人： Susumu Suzuki , Nobuhiro Iwai , Taro Ikeda , Naoki Tanaka , Hiroyuki Okuyama , Michiaki Okabe , Tsuyoshi Iwasaki , Toru Mogi , Koji Ishimaru , Takashi Ashida
发明人： Susumu Suzuki , Nobuhiro Iwai , Taro Ikeda , Naoki Tanaka , Hiroyuki Okuyama , Michiaki Okabe , Tsuyoshi Iwasaki , Toru Mogi , Koji Ishimaru , Takashi Ashida
IPC分类号： B62D25/08
CPC分类号： B60Q1/0491 , B60Q1/0441 , B62D25/163
摘要： A structure to couple exterior components of a vehicle includes a first exterior component and a second exterior component located apart from the first exterior component, wherein the first exterior component comprises an upper protrusion configured to overlap the second exterior component, and wherein the first exterior component comprises a side protrusion configured to overlap the second exterior component. A method to couple exterior components of a vehicle includes providing a protrusion about at least a portion of a first exterior component, installing the first exterior component proximal to a second exterior component, overlapping the protrusion of the first exterior component about a at least a portion of the second exterior component, interposing an elastic member between a peripheral surface of the first exterior component and an edge of the second exterior component, and positioning the elastic member beneath the protrusion of the first exterior component.
摘要翻译：耦合车辆外部部件的结构包括第一外部部件和与第一外部部件分开的第二外部部件，其中第一外部部件包括被配置为与第二外部部件重叠的上部突起，并且其中第一外部部件包括配置成与第二外部部件重叠的侧部突起。耦合车辆外部部件的方法包括提供围绕第一外部部件的至少一部分的突出部，将第一外部部件安装在靠近第二外部部件的位置，与第一外部部件的突起重叠，至少部分在所述第二外部部件的外周表面和所述第二外部部件的边缘之间插入弹性部件，并且将所述弹性部件定位在所述第一外部部件的突出部下方。

3. 发明授权

US09373274B2 Light-emitting device and display device 有权
标题翻译：发光装置及显示装置
公开(公告)号：US09373274B2
公开(公告)日：2016-06-21
申请号：US13268245
申请日：2011-10-07
申请人： Hiroyuki Okuyama
发明人： Hiroyuki Okuyama
IPC分类号： H01L27/15 , G09F9/33 , H01L27/32 , H01L25/075 , H01L33/20
CPC分类号： H01L25/0753 , G09F9/33 , H01L25/167 , H01L27/3206 , H01L33/16 , H01L33/20 , H01L33/62 , H01L2924/0002 , H04N9/30 , H01L2924/00
摘要： Disclosed herein is a light-emitting device including a plurality of first light-emitting elements mounted in a matrix form on a common wiring board. Each of the first light-emitting elements has a single crystal semiconductor multilayer structure and is a semiconductor element in the form of a chip that emits light in a given band of wavelengths. When attention is focused on the plurality of first light-emitting elements that belong in a given area of all the plurality of first light-emitting elements, the orientations of the common crystal axes of the first light-emitting elements adjacent to each other at least in one of the row and column directions differ.
摘要翻译：这里公开了一种发光装置，其包括以矩阵形式安装在公共布线板上的多个第一发光元件。每个第一发光元件具有单晶半导体多层结构，并且是以给定波长范围发光的芯片形式的半导体元件。当关注属于所有多个第一发光元件的给定区域中的多个第一发光元件时，至少彼此相邻的第一发光元件的公共晶轴的取向至少在行和列方向之一不同。

4. 发明授权

US09132692B2 Writing instrument 有权
标题翻译：书写工具
公开(公告)号：US09132692B2
公开(公告)日：2015-09-15
申请号：US13698200
申请日：2011-06-14
申请人： Toshimi Kamitani , Hiroyuki Okuyama , Mitsuhiro Kawabata , Tadashi Kouriki
发明人： Toshimi Kamitani , Hiroyuki Okuyama , Mitsuhiro Kawabata , Tadashi Kouriki
IPC分类号： B43K8/08 , B43K1/00 , B43K8/00 , B43K8/02 , B43K8/03 , B43K8/04 , B43K23/12
CPC分类号： B43K1/006 , B43K8/003 , B43K8/02 , B43K8/03 , B43K8/04 , B43K23/12
摘要： In order to provide a writing instrument in which a writing direction can be visually recognized in a broad range at a visual part of a pen tip and which can surely write to end of writing, the writing instrument is endowed with a constitution in which a pen tip is equipped with a porous member as a writing part and a holding member holding the above porous member and having at least one ink guiding part through which an ink contained in a barrel is provided to a writing part held by the holding member which is a visible part enabling to visually recognize a writing direction, wherein an area ratio of the visible part is 40% or more of the pen tip protruding from a tip part of the writing instrument.
摘要翻译：为了提供一种书写工具，其中书写方向可以在笔尖的视觉部分的宽范围内被视觉识别，并且可以肯定写入书写结束，书写工具被赋予其中笔顶部配备有作为书写部分的多孔构件和保持上述多孔构件并具有至少一个墨水引导部分的保持构件，墨水引导部件将容纳在墨镜筒中的墨水通过该墨水引导部件设置到由保持构件保持的书写部件可视部分能够可视地识别书写方向，其中可见部分的面积比是从书写工具的尖端突出的笔尖的40％或更多。

5. 发明授权

US08993992B2 GaN based semiconductor light-emitting device and method for producing same 有权
公开(公告)号：US08993992B2
公开(公告)日：2015-03-31
申请号：US12432397
申请日：2009-04-29
申请人： Goshi Biwa , Hiroyuki Okuyama
发明人： Goshi Biwa , Hiroyuki Okuyama
IPC分类号： H01L33/00 , H01L33/06 , H01L33/12 , H04N9/31 , H01L23/00 , H01L33/02 , H01L33/32
CPC分类号： H01L33/325 , H01L24/05 , H01L33/0025 , H01L33/025 , H01L33/06 , H01L33/12 , H01L33/32 , H01L2224/04042 , H01L2224/05552 , H01L2224/0603 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/12041 , H01L2924/12042 , H01L2924/13091 , H01L2924/15788 , H01L2924/181 , H04N9/3155 , H04N9/3164 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer.

6. 发明申请

US20110299867A1 IMAGE FORMING APPARATUS AND METHOD OF CONTROLLING THE IMAGE FORMING APPARATUS 有权
标题翻译：图像形成装置和控制图像形成装置的方法
公开(公告)号：US20110299867A1
公开(公告)日：2011-12-08
申请号：US13150673
申请日：2011-06-01
申请人： Hiromasa Tanaka , Eiichi Yamanishi , Hiroyuki Okuyama , Tetsuya Sadowara , Yoshihito Hiroe , Yasuaki Okamoto
发明人： Hiromasa Tanaka , Eiichi Yamanishi , Hiroyuki Okuyama , Tetsuya Sadowara , Yoshihito Hiroe , Yasuaki Okamoto
IPC分类号： G03G15/14 , G03G15/20
CPC分类号： G03G15/234 , G03G15/6508 , G03G15/6594 , G03G2215/00383 , G03G2215/00451 , G03G2215/00586
摘要： According to one embodiment, an image forming apparatus includes: a first paper feeding unit; a second paper feeding unit; a fixing unit configured to fix a developer image transferred onto a sheet; a conveying path configured to convey sheets; a receiving unit configured to receive an execution instruction for duplex printing for continuously printing an image on one surface and on the other surface of a sheet; an acquiring unit configured to acquire, in the printing on one surface, information concerning presence or absence of an image on the other surface; and a processor configured to change, in the printing on one surface, if a result of the acquisition concerning the sheet fed from the first paper feeding unit indicates that an image is present, a paper feeding unit from the first paper feeding unit to the second paper feeding unit and performs control for re-executing the duplex printing.
摘要翻译：根据一个实施例，图像形成装置包括：第一送纸单元; 第二送纸单元; 固定单元，被配置为固定转印到片材上的显影剂图像; 输送路径，其构造成输送片材; 接收单元，被配置为接收用于双面打印的执行指令，用于在片材的一个表面和另一个表面上连续打印图像; 获取单元，被配置为在一个表面上的打印中获取关于另一个表面上的图像的存在或不存在的信息; 以及处理器，其被配置为在一个表面上的打印中，如果关于从所述第一供纸单元供给的所述纸张的获取的结果指示存在图像，则从所述第一供纸单元向所述第二供纸单元进纸单元，并执行重新执行双面打印的控制。

7. 发明授权

US07564064B2 Semiconductor light emitting device, an integrated semiconductor light emitting apparatus, an image display apparatus, and an illuminating apparatus having a semiconductor layer with conical crystal portion 有权
标题翻译：半导体发光器件，集成半导体发光器件，图像显示设备和具有带有锥形晶体部分的半导体层的照明设备
公开(公告)号：US07564064B2
公开(公告)日：2009-07-21
申请号：US11682770
申请日：2007-03-06
申请人： Toyoharu Oohata , Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki
发明人： Toyoharu Oohata , Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki
IPC分类号： H01L27/15
CPC分类号： H01L33/20 , H01L33/007 , H01L33/24
摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.
摘要翻译：在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。形成上表面为C面的六边形棱镜部。在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

8. 发明授权

US07553370B2 Crystal growth method for nitride semiconductor and formation method for semiconductor device 有权
公开(公告)号：US07553370B2
公开(公告)日：2009-06-30
申请号：US11311017
申请日：2005-12-19
申请人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： C30B25/16
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02554 , H01L21/02557 , H01L21/02565 , H01L21/02568 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265
摘要： Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

9. 发明申请

US20090135449A1 IMAGE FORMING APPARATUS 审中-公开
标题翻译：图像形成装置
公开(公告)号：US20090135449A1
公开(公告)日：2009-05-28
申请号：US12277452
申请日：2008-11-25
申请人： Takeshi Watanabe , Nobuhiko Nakahara , Shigeru Fujiwara , Hiroyuki Okuyama
发明人： Takeshi Watanabe , Nobuhiko Nakahara , Shigeru Fujiwara , Hiroyuki Okuyama
IPC分类号： H04N1/60
CPC分类号： H04N1/4078 , H04N1/6033 , H04N1/6091
摘要： An image forming apparatus includes a pattern formation unit which forms a first gradation screen pattern on an image carrier unit at a non-image formation operation, a gradation characteristic determination unit which determines a gradation characteristic from the first gradation pattern formed by the pattern formation unit, a first gradation correction characteristic determination unit which determines a first gradation correction characteristic from the gradation characteristic determined by the gradation characteristic determination unit, a characteristic detection unit which detects a change characteristic in the image forming apparatus just before image formation, a pattern correlation characteristic correction unit which determines a pattern correlation characteristic corresponding to the change characteristic detected by the characteristic detection unit and a second gradation correction characteristic determination unit which determines a second gradation correction characteristic by performing an arithmetic operation on the first gradation correction characteristic and the pattern correlation characteristic.
摘要翻译：图像形成装置包括在非图像形成操作下在图像载体单元上形成第一灰度级屏幕图案的图案形成单元，灰度特性确定单元，其从由图案形成单元形成的第一灰度图案确定灰度特性第一灰度校正特性确定单元，其根据由灰度特性确定单元确定的灰度特性确定第一灰度校正特性;特征检测单元，其检测在图像形成之前的图像形成装置中的变化特性，图案相关特性确定对应于由特征检测单元检测到的变化特征的图案相关特性的校正单元和确定第二灰度校正特性的第二灰度校正特性确定单元对第一灰度校正特性和图案相关特性进行算术运算。

10. 发明申请

US20080048195A1 Gan-Based Light-Emitting Element and Method for Producing Same 审中-公开
标题翻译：赣基发光元件及其制作方法
公开(公告)号：US20080048195A1
公开(公告)日：2008-02-28
申请号：US11813736
申请日：2005-12-26
申请人： Hiroyuki Okuyama , Goshi Biwa
发明人： Hiroyuki Okuyama , Goshi Biwa
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/14 , H01L33/16
摘要： A GaN-based semiconductor light-emitting element capable of suppressing the occurrence of piezoelectric spontaneous polarization in the thickness direction of an active layer and reducing the driving voltage of a light-emitting diode is provided. The GaN-based semiconductor light-emitting element has a structure with a first GaN-based compound semiconductor layer 21 having the top face parallel to the a-plane and having a first conductivity type, an active layer 22 having the top face parallel to the a-plane, a second GaN-based compound semiconductor layer 23 having the top face parallel to the a-plane and having a second conductivity type, and a contact layer 24 composed of a GaN-based compound semiconductor and having the top face parallel to the a-plane, stacked in that order. The GaN-based semiconductor light-emitting element further includes a first electrode 25 disposed on the first GaN-based compound semiconductor layer 21 and a second electrode 26 disposed on the contact layer 24.
摘要翻译：提供了能够抑制有源层的厚度方向上的压电自发极化的发生并且降低发光二极管的驱动电压的GaN基半导体发光元件。 GaN基半导体发光元件具有第一GaN基化合物半导体层21的结构，该第一GaN基化合物半导体层21的顶面平行于a面并具有第一导电类型，有源层22的顶面平行于 a面，具有与a面平行并具有第二导电类型的第二GaN基化合物半导体层23和由GaN基化合物半导体构成的接触层24，并且其顶面平行于 a平面，按顺序堆叠。 GaN基半导体发光元件还包括设置在第一GaN基化合物半导体层21上的第一电极25和设置在接触层24上的第二电极26。

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