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1. 发明授权

US5882398A Method of manufacturing single crystal of silicon 失效
标题翻译：制造单晶硅的方法
公开(公告)号：US5882398A
公开(公告)日：1999-03-16
申请号：US786340
申请日：1997-01-23
申请人： Susumu Sonokawa , Toshiro Hayashi , Atsushi Iwasaki , Tomohiko Ohta
发明人： Susumu Sonokawa , Toshiro Hayashi , Atsushi Iwasaki , Tomohiko Ohta
IPC分类号： C30B15/00 , C30B15/10 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/22
CPC分类号： C30B29/06 , C30B15/10 , C30B15/305 , Y10S117/917
摘要： A single crystal of silicon is manufactured in accordance with the Czochralski method. A magnetic field is applied to a quartz crucible filled with silicon melt. Subsequently, a single crystal of silicon is pulled in a state in which no magnetic field is applied to the crucible, so as to obtain a single crystal of silicon. Therefore, the inner surface of a quartz crucible becomes very unlikely to deteriorate, and when the inner surface deteriorates, the deteriorated inner surface is restored. Accordingly, it is possible to manufacture a single crystal of silicon having a large diameter without generating a dislocation in the crystal. Moreover, even when a single crystal of silicon having a large diameter is manufactured, a larger number of single crystals of silicon can be manufactured from a single quartz crucible, and the pulling apparatus can be operated over a longer period of time using a single quartz crucible, thereby making it possible to manufacture a longer single crystal.
摘要翻译：按照Czochralski法制造单晶硅。将磁场施加到填充有硅熔体的石英坩埚。随后，在没有磁场施加到坩埚的状态下拉出单晶硅，从而获得单晶硅。因此，石英坩埚的内表面变得不太可能劣化，并且当内表面变坏时，内部表面变质。因此，可以制造具有大直径的单晶硅，而不会在晶体中产生位错。此外，即使制造具有大直径的单晶硅，可以从单个石英坩埚制造更多数量的单晶硅，并且可以使用单个石英在较长时间内操作拉制装置坩埚，从而可以制造更长的单晶。

2. 发明授权

US09422635B2 Single crystal production apparatus and single crystal production method having pedestal with grooves 有权
标题翻译：具有凹槽的基座的单晶制造装置和单晶制造方法
公开(公告)号：US09422635B2
公开(公告)日：2016-08-23
申请号：US13977864
申请日：2012-01-05
申请人： Atsushi Iwasaki , Susumu Sonokawa , Shinobu Takeyasu
发明人： Atsushi Iwasaki , Susumu Sonokawa , Shinobu Takeyasu
IPC分类号： C30B15/30 , C30B15/10 , C30B15/00 , C30B29/06
CPC分类号： C30B15/10 , C30B15/00 , C30B15/30 , C30B29/06 , Y10T117/1072
摘要： A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident.
摘要翻译：使用切克劳斯基法的单晶制造装置包括：用于保持原料熔融的坩埚; 支撑坩埚并能够向上和向下移动的基座; 用于经由基座旋转坩埚的坩埚旋转轴; 以及设置在所述坩埚下方并且设置有围绕所述基座的中心套筒的熔体接收器，其中，在所述基座的外周上设置有用于防止原料熔融物从所述坩埚中漏出的两个或更多个凹槽。即使在坩埚中熔融的原料在意外的事故等中流动到坩埚的外部并且沿着该坩埚的下方向下流动，单晶生产装置和单晶生产方法也可以可靠地防止熔体到达基座下方的金属部分从而防止设备损坏和发生事故。

3. 发明申请

US20130276693A1 SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION METHOD 有权
标题翻译：单晶生产设备和单晶生产方法
公开(公告)号：US20130276693A1
公开(公告)日：2013-10-24
申请号：US13977864
申请日：2012-01-05
申请人： Atsushi Iwasaki , Susumu Sonokawa , Shinobu Takeyasu
发明人： Atsushi Iwasaki , Susumu Sonokawa , Shinobu Takeyasu
IPC分类号： C30B15/10 , C30B15/30
CPC分类号： C30B15/10 , C30B15/00 , C30B15/30 , C30B29/06 , Y10T117/1072
摘要： A single crystal production apparatus using the Czochralski method, includes: a crucible for holding raw material melt; a pedestal that supports the crucible and can be moved upward and downward; a crucible rotating shaft for rotating the crucible via the pedestal; and a melt receiver that is disposed below the crucible and provided with a center sleeve surrounding the pedestal, wherein, on the outer periphery of the pedestal, two or more grooves for preventing the raw material melt leaking from the crucible from dripping are provided. The single crystal production apparatus and single crystal production method can reliably prevent melt from reaching a metal portion below the pedestal even when the raw material melt in the crucible flows to the outside of the crucible in an unexpected accident or the like and runs down along the pedestal and thereby prevent damage to the apparatus and the occurrence of an accident.
摘要翻译：使用切克劳斯基法的单晶制造装置包括：用于保持原料熔融的坩埚; 支撑坩埚并能够向上和向下移动的基座; 用于经由基座旋转坩埚的坩埚旋转轴; 以及设置在所述坩埚下方并且设置有围绕所述基座的中心套筒的熔体接收器，其中，在所述基座的外周上设置有用于防止原料熔融物从所述坩埚中漏出的两个或更多个凹槽。即使在坩埚中熔融的原料在意外的事故等中流向坩埚的外部时，单晶生产装置和单晶制造方法也可以可靠地防止熔体到达基座下方的金属部分，并且沿着从而防止设备损坏和发生事故。

4. 发明授权

US5269875A Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method 失效
标题翻译：调整硅单晶中氧浓度的方法和方法中使用的装置
公开(公告)号：US5269875A
公开(公告)日：1993-12-14
申请号：US825443
申请日：1992-01-24
申请人： Susumu Sonokawa , Kenji Araki , Atsushi Iwasaki , Masahiko Baba
发明人： Susumu Sonokawa , Kenji Araki , Atsushi Iwasaki , Masahiko Baba
IPC分类号： C30B15/00 , C30B15/14
CPC分类号： C30B29/06 , C30B15/00 , Y10T117/1008 , Y10T117/1072
摘要： Used in a Si crystal pulling apparatus using the Czochralski method, to lower the concentration of oxygen in the Si single crystal without increasing the production cost and to make the concentration substantially even all over the Si single crystal. The crystal 36 is produced by disposing a straightening tube 40 concentrically with and above a quartz crucible 22, letting inert gas flow down through the tube, dipping a seed crystal in Si molten liquid 28 in the quartz crucible and then pulling the seed crystal up. The concentration of oxygen in the Si single crystal is adjusted by controlling the distance H between the surface of the Si molten liquid and the bottom end of the straightening tube in accordance with the pull-up length Y or the pull-up time from a certain growth point of the crystal.
摘要翻译：在使用Czochralski方法的Si晶体拉制装置中，为了降低Si单晶中的氧浓度而不增加制造成本，并且使Si的单晶的浓度基本上均匀。晶体36通过与石英坩埚22同心地配置矫正管40，使惰性气体向下流过管，将晶种浸入石英坩埚中的Si熔融液28中，然后将晶种向上拉。通过根据上拉长度Y或上拉时间从一定程度控制Si熔融液体的表面与矫直管的底端之间的距离H来调节Si单晶中的氧浓度晶体的生长点。

5. 发明授权

US09234296B2 Apparatus having heat insulating cylinder with step portion for manufacturing semiconductor single crystal 有权
标题翻译：具有用于制造半导体单晶的台阶部的绝热筒的装置
公开(公告)号：US09234296B2
公开(公告)日：2016-01-12
申请号：US13813551
申请日：2011-07-06
申请人： Shou Takashima , Yuuichi Miyahara , Atsushi Iwasaki , Nobuaki Mitamura , Susumu Sonokawa
发明人： Shou Takashima , Yuuichi Miyahara , Atsushi Iwasaki , Nobuaki Mitamura , Susumu Sonokawa
IPC分类号： C30B15/14 , C30B29/06 , C30B15/30
CPC分类号： C30B15/14 , C30B15/30 , C30B29/06 , Y10T117/1068
摘要： The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.
摘要翻译：本发明是一种半导体单晶制造装置，其包括在生长炉主体内的坩埚和设置在坩埚周围的加热器，其中，绝热筒设置在生长炉主体内的加热器周围，绝热气缸包括将绝热筒分成其内表面的上部和下部的台阶部分，下部的内径大于上部的内径，隔热板设置在加热器，并且在生长炉主体内的隔热筒的下部的内侧，绝热板的直径大于绝热筒的上部的内径，并且小于内部下部直径。

6. 发明申请

US20130125810A1 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL 有权
标题翻译：用于制造半导体单晶的装置和方法
公开(公告)号：US20130125810A1
公开(公告)日：2013-05-23
申请号：US13813551
申请日：2011-07-06
申请人： Shou Takashima , Yuuichi Miyahara , Atsushi Iwasaki , Nobuaki Mitamura , Susumu Sonokawa
发明人： Shou Takashima , Yuuichi Miyahara , Atsushi Iwasaki , Nobuaki Mitamura , Susumu Sonokawa
IPC分类号： C30B15/14 , C30B15/30
CPC分类号： C30B15/14 , C30B15/30 , C30B29/06 , Y10T117/1068
摘要： The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.
摘要翻译：本发明是一种半导体单晶制造装置，其包括在生长炉主体内的坩埚和设置在坩埚周围的加热器，其中，绝热筒设置在生长炉主体内的加热器周围，绝热气缸包括将绝热筒分成其内表面的上部和下部的台阶部分，下部的内径大于上部的内径，隔热板设置在加热器，并且在生长炉主体内的隔热筒的下部的内侧，绝热板的直径大于绝热筒的上部的内径，并且小于内部下部直径。

7. 发明授权

US08717333B2 Electrostatic capacity type touch panel, display device and process for producing electrostatic capacity type touch panel 有权
标题翻译：静电容量型触摸屏，显示装置及静电容量型触摸屏制造工艺
公开(公告)号：US08717333B2
公开(公告)日：2014-05-06
申请号：US13044665
申请日：2011-03-10
申请人： Masao Ozeki , Atsushi Iwasaki
发明人： Masao Ozeki , Atsushi Iwasaki
IPC分类号： G06F3/044
CPC分类号： G06F3/044 , G06F2203/04111 , Y10T29/49002
摘要： An electrostatic capacity type touch panel having on one surface of a transparent substrate, a plurality of columns of column electrodes extending in a first direction and a plurality of columns of column electrodes extending in a second direction intersecting the first direction,such column electrodes extending in the first direction and such column electrodes extending in the second direction being eclectically disconnected from each other by an electrically insulating layer provided at least in a part of each intersection region of the column electrodes, and at least one of the two intersecting column electrodes being electrically connected by a bridge wire provided in the intersection region.
摘要翻译：一种静电电容型触摸屏，其具有在透明基板的一个表面上，沿第一方向延伸的多列列电极和沿与第一方向相交的第二方向延伸的多列列电极，第一方向和沿第二方向延伸的列电极通过至少设置在列电极的每个交叉区域的一部分中的电绝缘层彼此分离地彼此分离，并且两个相交的列电极中的至少一个是电通过设置在交叉路口区域中的桥接线连接。

8. 发明授权

US08083852B2 Single crystal growth method and single crystal pulling apparatus 有权
标题翻译：单晶生长法和单晶拉制装置
公开(公告)号：US08083852B2
公开(公告)日：2011-12-27
申请号：US12922917
申请日：2009-03-24
申请人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
发明人： Kosei Sugawara , Ryoji Hoshi , Masanori Takazawa , Yuuichi Miyahara , Atsushi Iwasaki
IPC分类号： C30B15/06
CPC分类号： C30B15/20 , C30B15/10 , C30B29/06 , Y10T117/1068 , Y10T117/1072
摘要： A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.
摘要翻译：一种从基于Czochralski方法在石英坩埚中熔化的硅原料的熔体中提取和生长单晶的硅单晶生长方法，该方法包括以下步骤：施加直流电压，使得石英坩埚的外壁作为正极，并且浸入硅原料的熔体中的电极用作负极，浸没电极与用于拉出单晶的拉拔构件分开放置; 以及在使电流通过电极的同时用牵引构件生长单晶及其牵引装置。

9. 发明申请

US20110237413A1 IMAGE HEATING APPARATUS AND PRESSURE ROLLER USED FOR IMAGE HEATING APPARATUS 失效
标题翻译：用于图像加热装置的图像加热装置和压力滚子
公开(公告)号：US20110237413A1
公开(公告)日：2011-09-29
申请号：US13154600
申请日：2011-06-07
申请人： Hiroyuki Sakakibara , Norio Hashimoto , Hiroaki Sakai , Atsushi Iwasaki , Yuko Sekihara , Kazuo Kishino , Masaaki Takahashi , Katsuhisa Matsunaka
发明人： Hiroyuki Sakakibara , Norio Hashimoto , Hiroaki Sakai , Atsushi Iwasaki , Yuko Sekihara , Kazuo Kishino , Masaaki Takahashi , Katsuhisa Matsunaka
IPC分类号： F28F5/02
CPC分类号： G03G15/206 , G03G2215/2035
摘要： A pressure roller forming a nip portion for contacting to a heating member to pinch and convey and heat recording material includes: a core metal and an elastic layer containing filler, the elastic layer containing the filler including thermal conductive filler with length of not less than 0.05 mm and not more than 1 mm and with thermal conductivity λf in the longitudinal direction in a range of λf≧500 W/(m·k) being dispersed in not less than 5 vol. % and not more than 40 vol % and the elastic layer containing the filler providing thermal conductivity λy in the longitudinal direction perpendicular to a recording material conveyance direction being λy≧2.5 W/(m·k) and ASKER-C hardness of the filler being not more than 60 degrees, wherein a solid rubber elastic layer with thermal conductivity λ in a thickness direction being not less than 0.16 W/(m·k) and not more than 0.40 W/(m·k) is included and the solid rubber elastic layer is formed on an outer periphery of the core metal and the elastic layer containing the filler is formed on the outer periphery of the solid rubber elastic layer. As a result, a pressure roller which can suppress temperature rise in a region, where recording material does not pass, stabilizes conveyability, provides high endurance, provides high thermal conductivity and low hardness is provided.
摘要翻译：形成用于与加热构件接触以夹持和传送和加热记录材料的压区的压辊包括：芯金属和含有填料的弹性层，所述弹性层包含长度不小于0.05的导热填料的填料 mm且不大于1mm，并且在λf≥500W/（m·k）的范围内的长度方向的热导率λf分散在5体积％以上。％且不大于40体积％，并且包含在垂直于记录材料输送方向的纵向方向上提供热导率λy的填料的弹性层为λy≥2.5W/（m·k），填料的ASKER-C硬度为不超过60度，其中包括厚度方向上的热导率λ的固体橡胶弹性层不小于0.16W /（m·k）且不大于0.40W /（m·k），并且固体橡胶在芯金属的外周形成弹性层，在固体橡胶弹性层的外周形成含有填料的弹性层。结果，可以抑制记录材料不通过的区域中的温度升高的压力辊稳定输送性，提供高耐久性，提供高导热性和低硬度。

10. 发明申请

US20110146564A1 METHOD FOR DETECTING DIAMETER OF SINGLE CRYSTAL, SINGLE-CRYSTAL MANUFACTURING METHOD BY USING THE SAME AND SINGLE-CRYSTAL MANUFACTURING APPARATUS 有权
标题翻译：用于检测单晶直径，单晶制造方法及其单晶制造装置的方法
公开(公告)号：US20110146564A1
公开(公告)日：2011-06-23
申请号：US13061586
申请日：2009-09-24
申请人： Hiroshi Ohtsuna , Atsushi Iwasaki
发明人： Hiroshi Ohtsuna , Atsushi Iwasaki
IPC分类号： C30B15/26
CPC分类号： C30B29/06 , C30B15/26 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032
摘要： A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved.
摘要翻译：一种用于根据切克劳斯基方法从包含在坩埚中的硅熔体中拉出单晶时的单晶直径的方法，所述方法至少包括：使用彼此等距离放置的两个相机作为目标直径在形成单晶的直体部分并且分别在单晶的生长点处面对单晶直径的两端时，从外部单独地捕获单晶的生长点的两端所述生长点是所述单晶和熔体表面之间的接触点; 并且基于所捕获的图像检测单晶的直径。结果，直径检测精度提高。

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