专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5508833A Display apparatus sealed with a solvent-soluble fluorocarbon or fluorine-containing resin having an adhesive covalent bond-forming functional group 失效
标题翻译：用具有粘合剂共价键形成官能团的溶剂可溶性碳氟化合物或含氟树脂密封的显示装置
公开(公告)号：US5508833A
公开(公告)日：1996-04-16
申请号：US85950
申请日：1993-07-06
申请人： Susumu Saito , Takashi Takahashi
发明人： Susumu Saito , Takashi Takahashi
IPC分类号： G02F1/1339 , G01C9/28
CPC分类号： G02F1/1339
摘要： A display apparatus has two plates and an intermediate member disposed between the two plates. The two plates are bonded by way of the intermediate member. A liquid is sealed in a gap or space defined by the plates and the intermediate member. The two plates are bonded by means of a soluble fluorocarbon resin or fluorine-containing resin.
摘要翻译：显示装置具有两个板和设置在两个板之间的中间构件。两个板通过中间构件结合。液体被密封在由板和中间构件限定的间隙或空间中。两个板通过可溶性氟碳树脂或含氟树脂粘合。

2. 发明授权

US5455696A Display apparatus including a liquid and two plates bonded together by a fluorocarbon resin 失效
标题翻译：包括液体的显示装置和通过氟碳树脂粘合在一起的两个板
公开(公告)号：US5455696A
公开(公告)日：1995-10-03
申请号：US87365
申请日：1993-07-08
申请人： Susumu Saito , Takashi Takahashi
发明人： Susumu Saito , Takashi Takahashi
IPC分类号： G02F1/1339 , G01C9/28
CPC分类号： G02F1/1339
摘要： A display apparatus has two plates and an intermediate member disposed between the two plates. The two plates are bonded by way of the intermediate member. A liquid is sealed in a gap or space defined by the plates and the intermediate member. The two plates are bonded by means of a fluorocarbon resin having terminal alkoxide groups or a fluorine-containing resin having terminal alkoxide groups.
摘要翻译：显示装置具有两个板和设置在两个板之间的中间构件。两个板通过中间构件结合。液体被密封在由板和中间构件限定的间隙或空间中。这两个板通过具有末端醇盐基的氟碳树脂或具有末端醇盐基团的含氟树脂结合。

3. 发明授权

US07968362B2 Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system 有权
标题翻译：半导体发光器件，表面发射激光二极管及其制造装置，制造方法，光模块和光通信系统
公开(公告)号：US07968362B2
公开(公告)日：2011-06-28
申请号：US12408362
申请日：2009-03-20
申请人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , C23C16/301 , C23C16/54 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/025 , H01L33/10 , H01L33/32 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译：半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

4. 发明授权

US07881357B2 Vertical cavity surface-emitting semiconductor laser device, optical transmission module, optical transmission device, and optical switching method 有权
标题翻译：垂直腔表面发射半导体激光器件，光传输模块，光传输器件和光开关方法
公开(公告)号：US07881357B2
公开(公告)日：2011-02-01
申请号：US12153152
申请日：2008-05-14
申请人： Takashi Takahashi
发明人： Takashi Takahashi
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0425 , H01S5/06226 , H01S5/1021 , H01S5/18302 , H01S5/18308 , H01S5/1833 , H01S5/18358 , H01S5/2063 , H01S5/34306 , H01S5/3432
摘要： In a vertical cavity surface-emitting semiconductor laser device, first and second resonance wavelengths which are different are provided while a first resonator and a second resonator are coupled optically, and a gain of an active layer at the first resonance wavelength on the side of short wavelength is higher than that at the second resonance wavelength on the side of long wavelength. An absorption coefficient of an optical absorption layer when no electric field is applied is small for the first and second resonance wavelengths, and when an electric field is applied, an absorption coefficient of the optical absorption layer for the first resonance wavelength on the side of short wavelength is larger than that for the second resonance wavelength on the side of long wavelength.
摘要翻译：在垂直腔表面发射半导体激光器件中，在第一谐振器和第二谐振器被光耦合的同时提供不同的第一和第二谐振波长，并且在短边的第一谐振波长处的有源层的增益波长比在长波长侧的第二共振波长处高。当不施加电场时光吸收层的吸收系数对于第一和第二共振波长小，并且当施加电场时，第一共振波长的光吸收层的吸收系数在短边波长比在长波长侧的第二共振波长的波长大。

5. 发明申请

US20100195691A1 LASER DIODE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE PRODUCING VISIBLE-WAVELENGTH RADIATION 有权
标题翻译：产生可见波长辐射的激光二极管和半导体发光器件
公开(公告)号：US20100195691A1
公开(公告)日：2010-08-05
申请号：US12696322
申请日：2010-01-29
申请人： Naoto Jikutani , Takashi Takahashi , Shunichi Sato
发明人： Naoto Jikutani , Takashi Takahashi , Shunichi Sato
IPC分类号： H01S5/187
CPC分类号： H01S5/2202 , B82Y20/00 , H01S5/22 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/2231 , H01S5/3201 , H01S5/3434
摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.
摘要翻译：激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层有源层，在蚀刻阻挡层上形成一对AlGaInP的电流阻挡区域，以便限定它们之间的条带区域，形成在一对电流阻挡区域上以覆盖蚀刻阻挡层的AlGaInP光波导层以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。

6. 发明申请

US20100048901A1 NOVEL CURCUMIN DERIVATIVE 有权
标题翻译：新的CURCUMIN DERIVATIVE
公开(公告)号：US20100048901A1
公开(公告)日：2010-02-25
申请号：US12516948
申请日：2007-11-30
申请人： Takashi Takahashi , Ichiro Hijikuro , Hachiro Sugimoto , Takeshi Kihara , Yoshiari Shimmyo , Tetsuhiro Niidome
发明人： Takashi Takahashi , Ichiro Hijikuro , Hachiro Sugimoto , Takeshi Kihara , Yoshiari Shimmyo , Tetsuhiro Niidome
IPC分类号： C07C49/203 , C07D211/82 , C07D241/40
CPC分类号： C07D209/08 , A61K31/404 , C07D209/12
摘要： The present invention provides a novel compound that is structurally similar to curcumin and has a suppressive effect on Aβ aggregation, a degradative effect on Aβ aggregates, an inhibitory effect on β-secretase, and a protective effect on neurons. The novel compound is a compound represented by the following general formula (Ia) or a salt thereof: wherein R1 represents a 4-hydroxy-3-methoxyphenyl group or the like, and R2 represents a 1H-indol-6-yl group or the like.
摘要翻译：本发明提供了结构上类似于姜黄素并对A＆Bgr具有抑制作用的新型化合物; 聚集，对A＆Bgr的降解作用; 聚集体，对分泌酶的抑制作用，以及对神经元的保护作用。新化合物是由下列通式（Ia）表示的化合物或其盐：其中R1表示4-羟基-3-甲氧基苯基等，R2表示1H-吲哚-6-基或喜欢。

7. 发明授权

US07610355B2 Transferring web contents 失效
标题翻译：传送网页内容
公开(公告)号：US07610355B2
公开(公告)日：2009-10-27
申请号：US11832681
申请日：2007-08-02
申请人： Shigeo Azuma , Takashi Takahashi , Toshifumi Takahashi
发明人： Shigeo Azuma , Takashi Takahashi , Toshifumi Takahashi
IPC分类号： G06F15/16
CPC分类号： H04L67/06 , H04L67/02
摘要： To transfer web contents to a web server from a computer through a network, a plurality of files composing the web contents are stored in the computer. A processor of the computer then detects files to be transferred from the plurality of files to create a transfer file list table. A transfer priority of the files to be transferred is determined by the processor on the basis of reference relation data of the files to be transferred which are designated in the transfer file list table and file format data of the plurality of files to create a transfer priority list table for the files to be transferred. The files to be transferred are transferred to the web server from a communication controller of the computer through the network by the processor in order of the transfer priority set in the transfer priority list table.
摘要翻译：为了通过网络从计算机将web内容传送到web服务器，组成Web内容的多个文件被存储在计算机中。然后，计算机的处理器检测要从多个文件传送的文件以创建传送文件列表表。要传送的文件的传送优先级由处理器根据在传送文件列表表中指定的要传送的文件的参考关系数据和多个文件的文件格式数据来确定，以创建传送优先级列表要传输的文件。要传送的文件按照传输优先级列表表中设置的传送优先级的顺序，由处理器从计算机的通信控制器通过网络传输到Web服务器。

8. 发明申请

US20070242354A1 Optical head device with film wavelength plate incorporated therein 审中-公开
标题翻译：配有膜波长板的光头装置
公开(公告)号：US20070242354A1
公开(公告)日：2007-10-18
申请号：US11714913
申请日：2007-03-07
申请人： Takashi Takahashi , Nobuki Tanaka , Takaaki Saito , Tatsuya Nakata
发明人： Takashi Takahashi , Nobuki Tanaka , Takaaki Saito , Tatsuya Nakata
IPC分类号： G02B27/28
CPC分类号： G11B7/13922 , G11B7/1365
摘要： Members such as a laser diode (10) that is a light source, a diffraction grating (11), a polarizing beam splitter (12) and a collimator lens are arranged in a casing (20). An optical head device having such a casing (20) is improved, so that a film wavelength plate (14) is directly attached to the casing (20) in a form free from a support substrate. The film wavelength plate (14) consists of only one film and has a thickness of 0.2 to 1.0 mm. Particularly, the film wavelength plate is preferably constituted by fusing polycarbonate films in a three-layer structure.
摘要翻译：诸如作为光源的激光二极管（10），衍射光栅（11），偏振分束器（12）和准直透镜的构件被布置在壳体（20）中。具有这种壳体（20）的光学头装置被改进，使得膜波长板（14）以没有支撑基板的形式直接附接到壳体（20）。膜波长板（14）仅由一个膜构成，厚度为0.2至1.0mm。特别地，膜波长板优选通过将聚碳酸酯膜熔合成三层结构而构成。

9. 发明申请

US20070221908A1 Semiconductor light emitter 有权
公开(公告)号：US20070221908A1
公开(公告)日：2007-09-27
申请号：US11802391
申请日：2007-05-22
申请人： Takashi Takahashi , Shunichi Sato , Morimasa Kaminishi
发明人： Takashi Takahashi , Shunichi Sato , Morimasa Kaminishi
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/105 , H01S5/18311 , H01S5/18358 , H01S5/22 , H01S5/3215 , H01S5/32366 , H01S5/3406 , H01S5/34306 , H01S5/34346 , H01S5/423 , H01S2304/04
摘要： A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier layers together constitute an active layer, wherein the barrier layers are formed of a Group-III-V mixed-crystal semiconductor that includes nitrogen and at least one other Group-V element, a nitrogen composition thereof being smaller than that of the quantum well active layer.

10. 发明授权

US07260137B2 Vertical-cavity surface-emission type laser diode and fabrication process thereof 有权
标题翻译：垂直腔表面发射型激光二极管及其制造工艺
公开(公告)号：US07260137B2
公开(公告)日：2007-08-21
申请号：US11338220
申请日：2006-01-23
申请人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
发明人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译：垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在有源区中的有源层和下反射器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式