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1. 发明申请

US20130092994A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE 有权
公开(公告)号：US20130092994A1
公开(公告)日：2013-04-18
申请号：US13585963
申请日：2012-08-15
申请人： Sunil SHIM , Jang-gn Yun , Jeonghyuk Choi , Kwang Soo Seol , Jaehoon Jang , Jungdal Choi
发明人： Sunil SHIM , Jang-gn Yun , Jeonghyuk Choi , Kwang Soo Seol , Jaehoon Jang , Jungdal Choi
IPC分类号： H01L29/78
CPC分类号： G11C16/0466 , G11C16/0483 , H01L23/535 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device is provided including first and second cell strings formed on a substrate, the first and second cell strings jointly connected to a bit line, wherein each of the first and second cell strings includes a ground selection unit, a memory cell, and first and second string selection units sequentially formed on the substrate to be connected to each other, wherein the ground selection unit is connected to a ground selection line, the memory cell is connected to a word line, the first string selection unit is connected to a first string selection line, and the second string selection unit is connected to a second string selection line, and wherein the second string selection unit of the first cell string has a channel dopant region.

2. 发明申请

US20160111165A1 METHODS OF OPERATING A NONVOLATILE MEMORY DEVICE 有权
标题翻译：操作非易失性存储器件的方法
公开(公告)号：US20160111165A1
公开(公告)日：2016-04-21
申请号：US14859637
申请日：2015-09-21
申请人： Sunil SHIM , Joon-sung LIM , Jin-Kyu KANG , Euido KIM , Jang-Gn YUN
发明人： Sunil SHIM , Joon-sung LIM , Jin-Kyu KANG , Euido KIM , Jang-Gn YUN
IPC分类号： G11C16/16 , G11C16/34
CPC分类号： G11C16/16 , G11C11/5635 , G11C16/3445
摘要： An operating method of a nonvolatile memory device is provided which sequentially performs a plurality of erase loops to erase at least one of a plurality of memory blocks. The operating method comprises performing at least one of the plurality of erase loops; performing a post-program operation on the at least one memory block after the at least one erase loop is executed; and performing remaining erase loops of the plurality of erase loops. The post-program operation is not performed when each of the remaining erase loops is executed.
摘要翻译：提供一种非易失性存储装置的操作方法，其顺序地执行多个擦除循环以擦除多个存储块中的至少一个。所述操作方法包括执行所述多个擦除环中的至少一个; 在执行所述至少一个擦除循环之后对所述至少一个存储器块执行后编程操作; 以及执行所述多个擦除环路的剩余擦除环路。当执行每个剩余擦除循环时，不执行后编程操作。

3. 发明申请

US20140063890A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140063890A1
公开(公告)日：2014-03-06
申请号：US14018885
申请日：2013-09-05
申请人： Wookhyoung LEE , Jongsik CHUN , Sunil SHIM , Jaeyoung AHN , Juyul LEE , Kihyun HWANG , Hansoo KIM , Woonkyung LEE , Jaehoon JANG , Wonseok CHO
发明人： Wookhyoung LEE , Jongsik CHUN , Sunil SHIM , Jaeyoung AHN , Juyul LEE , Kihyun HWANG , Hansoo KIM , Woonkyung LEE , Jaehoon JANG , Wonseok CHO
IPC分类号： G11C5/06 , H01L23/48 , G11C7/00
CPC分类号： H01L27/11565 , G11C5/06 , G11C5/063 , G11C7/00 , G11C7/18 , H01L23/48 , H01L27/0207 , H01L27/11519 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device including gate structures provided on a substrate, a separation insulating layer interposed between the gate structures, and a plurality of cell pillars connected to the substrate through each gate structure. Each gate structure may include horizontal electrodes vertically stacked on the substrate, and an interval between adjacent ones of the cell pillars is non-uniform.
摘要翻译：提供了一种半导体器件，其包括设置在基板上的栅极结构，插入在栅极结构之间的分离绝缘层以及通过每个栅极结构连接到基板的多个单元柱。每个栅极结构可以包括垂直堆叠在基板上的水平电极，并且相邻的单元柱之间的间隔是不均匀的。

4. 发明申请

US20150348636A1 OPERATING METHODS OF NONVOLATILE MEMORY DEVICES 审中-公开
标题翻译：非易失性存储器件的操作方法
公开(公告)号：US20150348636A1
公开(公告)日：2015-12-03
申请号：US14820703
申请日：2015-08-07
申请人： Byeong-in Choe , Jaehoon JANG , Kihyun KIM , Sunil SHIM , Woonkyung Lee
发明人： Byeong-in Choe , Jaehoon JANG , Kihyun KIM , Sunil SHIM , Woonkyung Lee
IPC分类号： G11C16/14 , G11C16/04
CPC分类号： G11C16/14 , G11C7/14 , G11C16/0483 , G11C16/10 , G11C16/16 , G11C16/30 , H01L27/11582 , H01L29/7926
摘要： Disclosed are methods of operating a nonvolatile memory device which includes a substrate and a plurality of cell strings provided on the substrate, each cell string including a plurality of memory cells stacked in a direction perpendicular to the substrate. The methods may include applying a word line erase voltage to word lines connected to memory cells of the cell strings; floating ground selection lines connected to ground selection transistors of the cell strings and string selection lines connected to string selection transistors of the plurality of cell strings; applying a ground voltage to at least one lower dummy word line connected to at least one lower dummy memory cell between memory cells and a ground selection transistor in each of the plurality of cell strings; applying an erase voltage to the substrate; and floating the at least one lower dummy word line after applying of the erase voltage.
摘要翻译：公开了一种非易失性存储器件的操作方法，其包括衬底和设置在衬底上的多个单元串，每个单元串包括沿垂直于衬底的方向堆叠的多个存储单元。所述方法可以包括将字线擦除电压施加到连接到所述单元串的存储单元的字线; 连接到单元串的地选择晶体管的浮动接地选择线和连接到多个单元串的串选择晶体管的串选择线; 将至少一个连接到所述多个单元串中的每一个的存储单元之间的至少一个下部虚设存储单元和所述多个单元串中的接地选择晶体管的下虚拟字线施加接地电压; 向基板施加擦除电压; 并且在施加擦除电压之后浮置所述至少一个下部虚拟字线。

5. 发明申请

US20150078087A1 CONTROL METHOD OF NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件的控制方法
公开(公告)号：US20150078087A1
公开(公告)日：2015-03-19
申请号：US14546477
申请日：2014-11-18
申请人： Sunil SHIM , Jin-Man HAN , Sang-Wan NAM , Won-Taeck JUNG
发明人： Sunil SHIM , Jin-Man HAN , Sang-Wan NAM , Won-Taeck JUNG
IPC分类号： G11C16/34 , G11C16/14
CPC分类号： G11C16/3418 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/349 , H01L27/11578 , H01L27/11582 , H01L29/7926
摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.
摘要翻译：根据示例性实施例，一种非易失性存储器件的控制方法，其包括在衬底上的多个存储块，每个存储块包括沿垂直于衬底的方向堆叠的多个子块，并且被配置为独立擦除，每个子块包括在垂直于衬底的方向上堆叠的多个存储单元。控制方法包括将第一存储块的计数值与参考值进行比较，所述计数值根据在第一存储器块中的数据被编程之后在第一存储器块执行的程序，读取或擦除操作的数量确定; 并且如果所述计数值大于或等于所述参考值，则执行重新编程操作，其中在第一存储器块中编程的数据被读取并且所读取的数据被编程在第二存储器块中。

6. 发明申请

US20140016413A1 NONVOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND MEMORY SYSTEM INCLUDING THE SAME 有权
标题翻译：非易失性存储器件，其操作方法和包括其的存储器系统
公开(公告)号：US20140016413A1
公开(公告)日：2014-01-16
申请号：US14029100
申请日：2013-09-17
申请人： Jinman HAN , Sunil SHIM , Hansoo KIM , Jae-Hoon JANG , Byoungkeun SON
发明人： Jinman HAN , Sunil SHIM , Hansoo KIM , Jae-Hoon JANG , Byoungkeun SON
IPC分类号： G11C16/04
CPC分类号： G11C16/04 , G11C16/10 , G11C16/16 , G11C16/3418 , H01L27/11578 , H01L27/11582 , H01L29/7926
摘要： Provided is a method of operating a nonvolatile memory device that includes a substrate and memory blocks having a plurality of memory cells stacked along a direction perpendicular to the substrate. The method includes: reading data from a selected sub block among sub blocks of a selected memory block and selectively refreshing each sub block of the selected memory block in response to the reading of the selected sub block, wherein each sub block of the selected memory block is separately erased.
摘要翻译：提供了一种操作包括基板的非易失性存储器件的方法和具有沿着垂直于衬底的方向堆叠的多个存储单元的存储器块。该方法包括：响应于所选择的子块的读取，从所选择的存储器块的子块中读取选定的子块的数据并选择刷新所选存储块的每个子块，其中所选存储块的每个子块被单独擦除。

7. 发明申请

US20110254069A1 FLOATING GATE TYPE NONVOLATILE MEMORY DEVICE AND RELATED METHODS OF MANUFACTURE AND OPERATION 有权
标题翻译：浮动门类型非易失性存储器件及其相关制造和操作方法
公开(公告)号：US20110254069A1
公开(公告)日：2011-10-20
申请号：US13074219
申请日：2011-03-29
申请人： Jae Ho KIM , Sung-Hwan JANG , Hye-Young KWON , Sunil SHIM , Hyun-Sil OH
发明人： Jae Ho KIM , Sung-Hwan JANG , Hye-Young KWON , Sunil SHIM , Hyun-Sil OH
IPC分类号： H01L29/788
CPC分类号： H01L29/7889 , H01L27/11551 , H01L27/11556 , H01L29/42324
摘要： A floating gate type nonvolatile memory device comprises a semiconductor layer, wordlines crossing over the semiconductor layer, and a memory element disposed between the wordlines and facing the semiconductor layer.
摘要翻译：浮栅型非易失性存储器件包括半导体层，跨越半导体层的字线和设置在字线之间并且面向半导体层的存储元件。

8. 发明申请

US20130007353A1 CONTROL METHOD OF NONVOLATILE MEMORY DEVICE 有权
公开(公告)号：US20130007353A1
公开(公告)日：2013-01-03
申请号：US13607038
申请日：2012-09-07
申请人： Sunil SHIM , Jinman HAN , Sang-Wan NAM , Won-Taeck JUNG
发明人： Sunil SHIM , Jinman HAN , Sang-Wan NAM , Won-Taeck JUNG
IPC分类号： G06F12/02
CPC分类号： G11C16/3418 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/349 , H01L27/11578 , H01L27/11582 , H01L29/7926
摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.

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