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1. 发明授权

US5956073A Noise-limiting transformer apparatus and method for making 失效
标题翻译：噪声限制变压器及其制造方法
公开(公告)号：US5956073A
公开(公告)日：1999-09-21
申请号：US770613
申请日：1996-12-19
申请人： Sungho Jin , Joseph Michael Nemchik , Robert Bruce Van Dover , Wei Zhu
发明人： Sungho Jin , Joseph Michael Nemchik , Robert Bruce Van Dover , Wei Zhu
IPC分类号： H01F17/00 , H01F3/10 , H01F17/04 , H01F19/04 , H01F19/06 , H01F38/02 , H01F27/28
CPC分类号： H01F38/02 , H01F17/04 , H01F19/04 , H01F3/10
摘要： Embodiments of the invention include a transformer device having a saturation region for limiting ingress noise and other noise. The transformer comprises a magnetic core, an input coil and an output coil arranged so that the output signal caused by the magnetic linkage between the input and output coils through the magnetic core is based on the magnitude of the input signal. According to an embodiment of the invention, the magnetic core includes a saturation region that limits the output signal regardless of the magnitude of the input signal once the saturation region reaches its saturation magnetization state. The saturation region comprises a reduced saturation magnetization level caused by a geometrically constricted region of the magnetic core or, alternatively, by a modified, magnetic-equivalent region having properties similar to a geometrically constricted region.
摘要翻译：本发明的实施例包括具有用于限制入噪声和其它噪声的饱和区域的变压器装置。变压器包括磁芯，输入线圈和输出线圈，其布置成使得通过磁芯的输入和输出线圈之间的磁连杆引起的输出信号基于输入信号的大小。根据本发明的实施例，一旦饱和区域达到其饱和磁化状态，磁芯就包括限制输出信号而不管输入信号幅度的饱和区域。饱和区域包括由磁芯的几何收缩区域引起的饱和磁化强度降低，或者替代地，具有类似于几何收缩区域的性质的改进的磁等效区域。

2. 发明授权

US5780175A Articles comprising magnetically soft thin films and methods for making such articles 失效
标题翻译：包含磁软薄膜的制品及其制造方法
公开(公告)号：US5780175A
公开(公告)日：1998-07-14
申请号：US595543
申请日：1996-02-02
申请人： Li-Han Chen , Sungho Jin , Wei Zhu , Robert Bruce van Dover
发明人： Li-Han Chen , Sungho Jin , Wei Zhu , Robert Bruce van Dover
IPC分类号： C22C38/00 , C22C38/26 , C22C38/28 , G11B5/127 , G11B5/187 , G11B5/31 , G11B5/39 , G11B5/667 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/14 , H01F10/32 , H01F17/00 , H01F41/30 , H01F10/10
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/1878 , G11B5/3109 , G11B5/3903 , G11B5/3906 , H01F10/002 , H01F10/08 , H01F10/13 , H01F10/138 , H01F10/147 , H01F10/3204 , H01F10/3254 , H01F17/0033 , H01F41/302 , Y10S428/90 , Y10T428/115
摘要： The invention is embodied in a soft magnetic thin film article comprising an iron-chromium-nitrogen (Fe--Cr--N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron-chromium-nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150.degree. C). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.
摘要翻译：本发明体现在包含铁 - 铬 - 氮（Fe-Cr-N）基合金的软磁薄膜制品和制造这种制品的方法中。在一个实施方案中，使用具有钽的铁 - 铬 - 氮基合金与所述软磁性薄膜制品形成钛（Ti），锆（Zr），铪（Hf），钒（V），钼（Mo），铌（Nb）或钨（W）。制品形成为使得合金在沉积条件下具有相对高的饱和磁化强度（例如，大于约15kG）和相对较低的矫顽力（例如，小于约2.0奥斯特），或者替代地，低温处理（如低于约150℃）。本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。

3. 发明授权

US5998048A Article comprising anisotropic Co-Fe-Cr-N soft magnetic thin films 失效
标题翻译：文章包括各向异性Co-Fe-Cr-N软磁薄膜
公开(公告)号：US5998048A
公开(公告)日：1999-12-07
申请号：US33204
申请日：1998-03-02
申请人： Sungho Jin , Timothy J. Klemmer , Thomas Henry Tiefel, deceased , Robert Bruce Van Dover , Wei Zhu
发明人： Sungho Jin , Timothy J. Klemmer , Thomas Henry Tiefel, deceased , Robert Bruce Van Dover , Wei Zhu
IPC分类号： G11B5/31 , G11B5/39 , H01F10/13 , G11B5/66
CPC分类号： H01F10/132 , G11B5/3109 , G11B5/39 , G11B5/3903 , H01F10/138 , H01F10/265 , Y10S428/90
摘要： The invention is embodied in an anisotropic, soft magnetic thin film article comprising a cobalt-iron-chromium-nitrogen (Co--Fe--Cr--N) alloy. The thin film is formed such that the alloy has a relatively high saturation magnetization (4.pi.M.sub.s), e.g., greater than approximately 8 kilogauss (kG), a relatively low coercivity (H.sub.c), e.g., less than approximately 2.0 oersteds (Oe), a relatively high squareness ratio (M.sub.r /M.sub.s), e.g., greater than approximately 0.90, and a relatively high anisotropy field (H.sub.k), e.g., greater than approximately 20 Oe, in an as-deposited condition or, alternatively, with a relatively low temperature treatment, e.g., below approximately 300.degree. Celsius. The inventive films are suitable for use in electromagnetic devices, e.g., in microtransformer cores, inductor cores and in magnetic read-write heads.
摘要翻译：本发明体现在包含钴 - 铁 - 铬 - 氮（Co-Fe-Cr-N）合金的各向异性软磁薄膜制品中。形成薄膜使得合金具有相对高的饱和磁化强度（4πMs），例如大于约8千兆（kG），较低的矫顽力（Hc），例如小于约2.0奥斯特（Oe），相对高的矩形比（Mr / Ms），例如，大于约0.90，以及比较高的各向异性场（Hk），例如大于约20Oe，或者相对于低温处理，例如低于约300℃。本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。

4. 发明授权

US5976715A Articles comprising magnetically soft thin films 失效
标题翻译：包含磁软薄膜的制品
公开(公告)号：US5976715A
公开(公告)日：1999-11-02
申请号：US965682
申请日：1997-11-06
申请人： Li-Han Chen , Sungho Jin , Wei Zhu , Robert Bruce van Dover
发明人： Li-Han Chen , Sungho Jin , Wei Zhu , Robert Bruce van Dover
IPC分类号： C22C38/00 , C22C38/26 , C22C38/28 , G11B5/127 , G11B5/187 , G11B5/31 , G11B5/39 , G11B5/667 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/14 , H01F10/32 , H01F17/00 , H01F41/30 , G11B5/66
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/1878 , G11B5/3109 , G11B5/3903 , G11B5/3906 , H01F10/002 , H01F10/08 , H01F10/13 , H01F10/138 , H01F10/147 , H01F10/3204 , H01F10/3254 , H01F17/0033 , H01F41/302 , Y10S428/90 , Y10T428/115
摘要： The invention is embodied in a soft magnetic thin film article comprising an iron--chromium-nitrogen (Fe--Cr--N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron--chromium--nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150.degree. C.). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.
摘要翻译：本发明体现在包含铁 - 铬 - 氮（Fe-Cr-N）基合金的软磁薄膜制品和制造这种制品的方法中。在一个实施方案中，使用具有钽的铁 - 铬 - 氮基合金与所述软磁性薄膜制品形成钛（Ti），锆（Zr），铪（Hf），钒（V），钼（Mo），铌（Nb）或钨（W）。制品形成为使得合金在沉积条件下具有相对高的饱和磁化强度（例如，大于约15kG）和相对较低的矫顽力（例如，小于约2.0奥斯特），或者替代地，低温处理（如低于约150℃）。本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。

5. 发明授权

US06291402B1 Method of making a superconductive oxide body 失效
标题翻译：制造超导氧化物体的方法
公开(公告)号：US06291402B1
公开(公告)日：2001-09-18
申请号：US07426485
申请日：1989-10-23
申请人： Sungho Jin , Richard Curry Sherwood , Thomas Henry Tiefel , Robert Bruce van Dover
发明人： Sungho Jin , Richard Curry Sherwood , Thomas Henry Tiefel , Robert Bruce van Dover
IPC分类号： B05D512
CPC分类号： H01L39/143 , H01L39/126 , H01L39/2429 , H01L39/248
摘要： Some mechanical, electrical, and thermal properties of high Tc superconductors such as (Ba, Y) cuprates can be substantially improved by the dispersal of an appropriate metal in the superconductive body. For instance, mixing Ag particles with superconductive powder of nominal composition Ba2YCu3O7 and processing the mixture in the conventional manner can produce superconductive bodies having Tc of about 93 K and substantially greater fracture strength and normal state electrical and thermal conductivity than otherwise identical bodies that do not contain Ag particles.
摘要翻译：通过在超导体中分散适当的金属，可以显着提高高Tc超导体（如Ba，Y）铜酸盐的一些机械，电和热性能。例如，将Ag颗粒与标称组成Ba2YCu3O7的超导粉末混合并以常规方式处理混合物可以产生具有大约93K的Tc的超导体，并且具有比其它不相同的相同体的断裂强度和正常状态的电和热导率更高的超导体含有Ag颗粒。

6. 发明授权

US06741019B1 Article comprising aligned nanowires 有权
标题翻译：文章包括对齐的纳米线
公开(公告)号：US06741019B1
公开(公告)日：2004-05-25
申请号：US09420157
申请日：1999-10-18
申请人： Robert William Filas , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Robert William Filas , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J130
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469 , H01J2223/04 , Y10S977/762
摘要： An improved process for fabricating emitter structures from nanowires, wherein the nanowires are coated with a magnetic material to allow useful alignment of the wires in the emitter array, and techniques are utilized to provide desirable protrusion of the aligned nanowires in the final structure. In one embodiment, nanowires at least partially coated by a magnetic material are provided, the nanowires having an average length of about 0.1 &mgr;m to about 10,000 &mgr;m. The nanowires are mixed in a liquid medium, and a magnetic field is applied to align the nanowires. The liquid medium is provided with a precursor material capable of consolidation into a solid matrix, e.g., conductive particles or a metal salt, the matrix securing the nanowires in an aligned orientation. A portion of the aligned nanowires are exposed, e.g., by etching a surface portion of the matrix material, to provide desirable nanowire tip protrusion.
摘要翻译：一种用于从纳米线制造发射体结构的改进方法，其中纳米线被涂覆有磁性材料，以允许发射器阵列中的线的有用对准，并且利用技术在最终结构中提供对准的纳米线所需的突出。在一个实施例中，提供至少部分地由磁性材料涂覆的纳米线，所述纳米线具有约0.1μm至约10,000μm的平均长度。纳米线在液体介质中混合，施加磁场以对准纳米线。液体介质设置有能够固结成固体基质例如导电颗粒或金属盐的前体材料，该基质将纳米线固定在一个排列的取向上。对准的纳米线的一部分例如通过蚀刻基质材料的表面部分而暴露，以提供所需的纳米线尖端突起。

7. 发明授权

US06504292B1 Field emitting device comprising metallized nanostructures and method for making the same 有权
标题翻译：包括金属化纳米结构的场致发射器件及其制造方法
公开(公告)号：US06504292B1
公开(公告)日：2003-01-07
申请号：US09365059
申请日：1999-07-30
申请人： Kyung Moon Choi , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Kyung Moon Choi , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J113
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469 , Y10S977/745 , Y10S977/939
摘要： In accordance with the invention, an improved conductive nanostructure assembly comprises an array of metallized nanostructures disposed on a conductive substrate. The substrate can also be metallized. Such assemblies provide continuous electron transport from the substrate to the tips of the nanostructures. Several ways of making such assemblies are described along with several devices employing the assemblies.
摘要翻译：根据本发明，改进的导电纳米结构组件包括设置在导电衬底上的金属化纳米结构阵列。衬底也可以金属化。这样的组件提供从衬底到纳米结构的尖端的连续的电子传输。与使用组件的几个装置一起描述制造这种组件的几种方式。

8. 发明授权

US06340822B1 Article comprising vertically nano-interconnected circuit devices and method for making the same 有权
标题翻译：文章包括垂直纳米互连电路器件及其制造方法
公开(公告)号：US06340822B1
公开(公告)日：2002-01-22
申请号：US09426457
申请日：1999-10-05
申请人： Walter L. Brown , Sungho Jin , Wei Zhu
发明人： Walter L. Brown , Sungho Jin , Wei Zhu
IPC分类号： H01L2906
CPC分类号： H01L24/11 , B82Y10/00 , H01L21/76885 , H01L23/49811 , H01L23/53276 , H01L24/13 , H01L51/0595 , H01L2224/11003 , H01L2224/111 , H01L2224/11334 , H01L2224/13193 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04953 , H01L2924/10329 , H01L2924/14 , H01L2924/15747 , H01L2924/351 , Y10S438/962 , Y10S977/762 , Y10S977/848 , H01L2924/00
摘要： A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e.g., so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.
摘要翻译：公开了一种电路装置，其包括至少两个电路层或电路装置，所述至少两个电路层或多个平行且基本上等长的纳米线在其间设置的垂直互连的电路装置。纳米线可以包括复合材料，例如具有沿其长度存在的异质结，以提供各种器件应用。还公开了一种用于制造电路装置的方法，包括在可溶解或可移除的衬底上生长多个纳米线，使纳米线的长度相等（例如，使得多个纳米线中的每个纳米线的长度基本上相等），转移和将所述多个纳米线的暴露端接合到第一电路层; 并除去可溶解的基材。附接到第一电路层的纳米线然后可以进一步结合到第二电路层以提供垂直互连的电路器件。

9. 发明授权

US06297063B1 In-situ nano-interconnected circuit devices and method for making the same 有权
标题翻译：原位纳米互连电路器件及其制造方法
公开(公告)号：US06297063B1
公开(公告)日：2001-10-02
申请号：US09426453
申请日：1999-10-25
申请人： Walter L. Brown , Sungho Jin , Wei Zhu
发明人： Walter L. Brown , Sungho Jin , Wei Zhu
IPC分类号： H01L2100
CPC分类号： H01L24/16 , H01L23/49877 , H01L23/5385 , H01L24/11 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/13099 , H01L2224/8114 , H01L2224/9202 , H01L2225/06527 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01047 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04953 , H01L2924/10329 , H01L2924/14 , H01L2924/351 , Y10S438/962 , Y10S977/932 , H01L2924/00
摘要： A circuit device is disclosed comprising at least two circuit layers interconnected with a plurality of substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires in-situ on at least one circuit substrate and then interconnecting the nanowires to a mating substrate.
摘要翻译：公开了一种电路装置，其包括与设置在它们之间的多个基本上等长的纳米线互连的至少两个电路层。纳米线可以包括复合材料，例如具有沿其长度存在的异质结，以提供各种器件应用。还公开了一种用于制造电路器件的方法，包括在至少一个电路衬底上原地生长多个纳米线，然后将纳米线互连到匹配衬底。

10. 发明授权

US5846122A Method and apparatus for polishing metal-soluble materials such as diamond 失效
标题翻译：用于抛光金属可溶性材料如金刚石的方法和设备
公开(公告)号：US5846122A
公开(公告)日：1998-12-08
申请号：US429259
申请日：1995-04-25
申请人： John Edwin Graebner , Sungho Jin , Guenther Wilhelm Kammlott , Wei Zhu
发明人： John Edwin Graebner , Sungho Jin , Guenther Wilhelm Kammlott , Wei Zhu
IPC分类号： B24B1/00 , B24B37/04 , B24B7/19 , B24B7/30
CPC分类号： B24B37/04 , B24B37/042
摘要： Applicants have discovered a new method for fine polishing surfaces of metal-soluble materials such as diamond to the submicron level. The method involves applying to the material surface a polishing medium composed of metal powder and an acidic or basic carrier. The surface is then polished by high speed rubbing to a submicron finish. Several embodiments of apparatus for performing the polishing are described.
摘要翻译：申请人已经发现了将金属可溶性材料如金刚石的表面精细抛光到亚微米级的新方法。该方法包括向材料表面施加由金属粉末和酸性或碱性载体构成的抛光介质。然后通过高速摩擦将表面抛光到亚微米的表面。描述了用于执行抛光的装置的几个实施例。

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