专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06538367B1 Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same 有权
标题翻译：场致发射器件包括场集中纳米电导体组件及其制造方法
公开(公告)号：US06538367B1
公开(公告)日：2003-03-25
申请号：US09369802
申请日：1999-08-06
申请人： Kyung Moon Choi , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Kyung Moon Choi , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J102
CPC分类号： H01J1/304 , B82Y10/00 , H01J9/025 , H01J23/04 , H01J2201/30469 , H01J2225/38 , Y10S977/939
摘要： This invention is predicated on applicants' discovery that a highly oriented nanoconductor structure alone does not guarantee efficient field emission. To the contrary, the conventional densely populated, highly oriented structures actually yield relatively poor field emission characteristics. Applicants have determined that the individual nanoconductors in conventional assemblies are so closely spaced that they shield each other from effective field concentration at the ends, thus diminishing the driving force for efficient electron emission. In accordance with the invention, an improved field emitting nanoconductors assembly (a “low density nanoconductor assembly”) comprises an array of nanoconductors which are highly aligned but spaced from each other no closer than 10% of the height of the nanoconductors. In this way, the field strength at the ends will be at least 50% of the maximal field concentration possible. Several ways of making the optimally low density assemblies are described along with several devices employing the assemblies.
摘要翻译：本发明基于申请人的发现，即单独的高度取向的纳米结构结构不能保证有效的场发射。相反，传统的人口稠密，高度取向的结构实际上产生相对较差的场致发射特性。申请人已经确定，常规组件中的单个纳米电感器如此紧密地间隔开，使得它们彼此屏蔽在端部处的有效场浓度，从而减少了有效电子发射的驱动力。根据本发明，改进的场发射纳米结构器件组件 “低密度纳米导体组件”）包括高度对准但彼此间隔不超过纳米电感器高度的10％的纳米电感器阵列。以这种方式，末端的场强将是可能的最大场浓度的至少50％。使用几种使用组件的装置来描述制造最佳低密度组件的几种方式。

2. 发明授权

US06322713B1 Nanoscale conductive connectors and method for making same 有权
标题翻译：纳米导电连接器及其制造方法
公开(公告)号：US06322713B1
公开(公告)日：2001-11-27
申请号：US09354928
申请日：1999-07-15
申请人： Kyung Moon Choi , Sungho Jin
发明人： Kyung Moon Choi , Sungho Jin
IPC分类号： B82B100
CPC分类号： H01L24/10 , B82Y10/00 , B82Y30/00 , C30B25/00 , C30B29/605 , H01L21/288 , H01L21/76838 , H01L23/52 , H01L24/13 , H01L24/45 , H01L24/85 , H01L2224/13 , H01L2224/13099 , H01L2224/45144 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , Y10S977/72 , Y10S977/742 , Y10S977/745 , Y10S977/762 , Y10S977/843 , Y10S977/932 , H01L2224/48 , H01L2924/00
摘要： In accordance with the invention, nanoscale connectors particularly useful for connecting microscale devices comprise free-standing nanoscale conductors. The nanoscale conductors are conveniently fabricated in sets of controlled, preferably equal length by providing a removable substrate, growing conductive nanotubes or nanowires on the substrate, equalizing the length of the nanoscale conductors, and removing the substrate. Preferably the removable substrate is soluble, leaving a collection of free standing nanoscale connectors in suspension or solution.
摘要翻译：根据本发明，特别适用于连接微型器件的纳米级连接器包括独立的纳米级导体。纳米尺寸导体通过提供可移除的衬底，在衬底上生长导电纳米管或纳米线，方便地制造成受控的，优选相等的长度，使纳米尺寸导体的长度均匀化，以及去除衬底。优选地，可移除的基底是可溶的，留下悬浮液或溶液中的独立的纳米级连接器的集合。

3. 发明授权

US06504292B1 Field emitting device comprising metallized nanostructures and method for making the same 有权
标题翻译：包括金属化纳米结构的场致发射器件及其制造方法
公开(公告)号：US06504292B1
公开(公告)日：2003-01-07
申请号：US09365059
申请日：1999-07-30
申请人： Kyung Moon Choi , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
发明人： Kyung Moon Choi , Sungho Jin , Gregory Peter Kochanski , Wei Zhu
IPC分类号： H01J113
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469 , Y10S977/745 , Y10S977/939
摘要： In accordance with the invention, an improved conductive nanostructure assembly comprises an array of metallized nanostructures disposed on a conductive substrate. The substrate can also be metallized. Such assemblies provide continuous electron transport from the substrate to the tips of the nanostructures. Several ways of making such assemblies are described along with several devices employing the assemblies.
摘要翻译：根据本发明，改进的导电纳米结构组件包括设置在导电衬底上的金属化纳米结构阵列。衬底也可以金属化。这样的组件提供从衬底到纳米结构的尖端的连续的电子传输。与使用组件的几个装置一起描述制造这种组件的几种方式。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式