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    • 1. 发明申请
    • Silicon direct bonding method
    • 硅直接键合法
    • US20070155056A1
    • 2007-07-05
    • US11505420
    • 2006-08-17
    • Sung-gyu KangSeung-mo LimJae-chang LeeWoon-bae Kim
    • Sung-gyu KangSeung-mo LimJae-chang LeeWoon-bae Kim
    • H01L21/00
    • H01L21/187H01L21/2007
    • A silicon direct bonding (SDB) method by which void formation caused by gases is suppressed. The SDB method includes: preparing two silicon substrates having corresponding bonding surfaces; forming trenches having a predetermined depth in at least one bonding surface of the two silicon substrates; forming gas discharge outlets connected to the trenches on at least one of the two silicon substrates to vertically penetrate the bonding surface; cleaning the two silicon substrates; closely contacting the two silicon substrates to each other; and thermally treating the two substrates to bond them to each other. The trenches are formed along at least a part of a plurality of dicing lines, and both ends of the trenches are clogged. Gases generated during a thermal treatment process can be smoothly and easily discharged through the trenches and the gas discharge outlet such that a void is prevented from being formed in the junctions of the two silicon substrates due to the gases.
    • 抑制由气体引起的空隙形成的硅直接接合(SDB)方法。 SDB方法包括:制备具有相应粘合表面的两个硅衬底; 在所述两个硅衬底的至少一个接合表面中形成具有预定深度的沟槽; 形成连接到所述两个硅衬底中的至少一个上的沟槽的气体放电出口,以垂直地穿透所述接合表面; 清洁两个硅衬底; 使两个硅衬底彼此紧密接触; 并对两个基板进行热处理以将它们彼此粘合。 沟槽沿着多个切割线的至少一部分形成,并且沟槽的两端被堵塞。 在热处理过程中产生的气体可以通过沟槽和气体排出口平滑且容易地排出,从而防止由于气体而在两个硅衬底的接合处形成空隙。
    • 2. 发明授权
    • Silicon direct bonding method
    • 硅直接键合法
    • US07442622B2
    • 2008-10-28
    • US11505420
    • 2006-08-17
    • Sung-gyu KangSeung-mo LimJae-chang LeeWoon-bae Kim
    • Sung-gyu KangSeung-mo LimJae-chang LeeWoon-bae Kim
    • H01L21/30
    • H01L21/187H01L21/2007
    • A silicon direct bonding (SDB) method by which void formation caused by gases is suppressed. The SDB method includes: preparing two silicon substrates having corresponding bonding surfaces; forming trenches having a predetermined depth in at least one bonding surface of the two silicon substrates; forming gas discharge outlets connected to the trenches on at least one of the two silicon substrates to vertically penetrate the bonding surface; cleaning the two silicon substrates; closely contacting the two silicon substrates to each other; and thermally treating the two substrates to bond them to each other. The trenches are formed along at least a part of a plurality of dicing lines, and both ends of the trenches are clogged. Gases generated during a thermal treatment process can be smoothly and easily discharged through the trenches and the gas discharge outlet such that a void is prevented from being formed in the junctions of the two silicon substrates due to the gases.
    • 抑制由气体引起的空隙形成的硅直接接合(SDB)方法。 SDB方法包括:制备具有相应粘合表面的两个硅衬底; 在所述两个硅衬底的至少一个接合表面中形成具有预定深度的沟槽; 形成连接到所述两个硅衬底中的至少一个上的沟槽的气体放电出口,以垂直地穿透所述接合表面; 清洁两个硅衬底; 使两个硅衬底彼此紧密接触; 并对两个基板进行热处理以将它们彼此粘合。 沟槽沿着多个切割线的至少一部分形成,并且沟槽的两端被堵塞。 在热处理过程中产生的气体可以通过沟槽和气体排出口平滑且容易地排出,从而防止由于气体而在两个硅衬底的接合处形成空隙。