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    • 3. 发明申请
    • Piezoelectric actuator inkjet head and method of forming the same
    • 压电致动器喷墨头及其形成方法
    • US20070195134A1
    • 2007-08-23
    • US11581333
    • 2006-10-17
    • Tae-kyung LeeJae-woo ChungKyo-yeol LeeHwa-sun LeeSeung-mo LimJae-chang Lee
    • Tae-kyung LeeJae-woo ChungKyo-yeol LeeHwa-sun LeeSeung-mo LimJae-chang Lee
    • B41J2/045
    • B41J2/14233B41J2002/14491Y10T29/42Y10T29/49002Y10T29/49005Y10T29/4908
    • A piezoelectric actuator of an inkjet head and a method of forming the piezoelectric actuator. The piezoelectric actuator is formed on a vibration plate to provide a driving force to each of a plurality of pressure chambers. The piezoelectric actuator includes a lower electrode formed on the vibration plate, a piezoelectric layer formed on the lower electrode at a position corresponding to each of the pressure chambers, a supporting pad formed on the lower electrode, the supporting pad contacting one end of the piezoelectric layer and extending away from the one end of the piezoelectric layer, and an upper electrode extending from a top surface of the piezoelectric layer to a top surface of the supporting pad. The upper electrode is bonded to a driving circuit above the supporting pad to receive a voltage from the driving circuit. The piezoelectric layer may have substantially the same length as the pressure chamber. The supporting pad may be formed of a photosensitive polymer and may have substantially the same height as the piezoelectric layer. The upper electrode may include a first portion formed on the piezoelectric layer and a second portion formed on the supporting pad, and the second portion may be wider than the first portion.
    • 喷墨头的压电致动器和形成压电致动器的方法。 压电致动器形成在振动板上以向多个压力室中的每一个提供驱动力。 压电致动器包括形成在振动板上的下电极,形成在下电极上的与每个压力室对应的位置处的压电层,形成在下电极上的支撑焊盘,支撑焊盘接触压电体的一端 并且离开压电层的一端延伸,以及从压电层的顶表面延伸到支撑衬垫的顶表面的上电极。 上电极接合到支撑焊盘上方的驱动电路,以接收来自驱动电路的电压。 压电层可以具有与压力室大致相同的长度。 支撑垫可以由光敏聚合物形成,并且可以具有与压电层基本相同的高度。 上部电极可以包括形成在压电层上的第一部分和形成在支撑垫上的第二部分,并且第二部分可以比第一部分更宽。
    • 5. 发明授权
    • Piezoelectric actuator inkjet head and method of forming the same
    • 压电致动器喷墨头及其形成方法
    • US07682001B2
    • 2010-03-23
    • US11581333
    • 2006-10-17
    • Tae-kyung LeeJae-woo ChungKyo-yeol LeeHwa-sun LeeSeung-mo LimJae-chang Lee
    • Tae-kyung LeeJae-woo ChungKyo-yeol LeeHwa-sun LeeSeung-mo LimJae-chang Lee
    • B41J2/045
    • B41J2/14233B41J2002/14491Y10T29/42Y10T29/49002Y10T29/49005Y10T29/4908
    • A piezoelectric actuator of an inkjet head and a method of forming the piezoelectric actuator. The piezoelectric actuator is formed on a vibration plate to provide a driving force to each of a plurality of pressure chambers. The piezoelectric actuator includes a lower electrode formed on the vibration plate, a piezoelectric layer formed on the lower electrode at a position corresponding to each of the pressure chambers, a supporting pad formed on the lower electrode, the supporting pad contacting one end of the piezoelectric layer and extending away from the one end of the piezoelectric layer, and an upper electrode extending from a top surface of the piezoelectric layer to a top surface of the supporting pad. The upper electrode is bonded to a driving circuit above the supporting pad to receive a voltage from the driving circuit. The piezoelectric layer may have substantially the same length as the pressure chamber. The supporting pad may be formed of a photosensitive polymer and may have substantially the same height as the piezoelectric layer. The upper electrode may include a first portion formed on the piezoelectric layer and a second portion formed on the supporting pad, and the second portion may be wider than the first portion.
    • 喷墨头的压电致动器和形成压电致动器的方法。 压电致动器形成在振动板上以向多个压力室中的每一个提供驱动力。 压电致动器包括形成在振动板上的下电极,形成在下电极上的与每个压力室对应的位置处的压电层,形成在下电极上的支撑焊盘,支撑焊盘接触压电体的一端 并且离开压电层的一端延伸,以及从压电层的顶表面延伸到支撑衬垫的顶表面的上电极。 上电极接合到支撑焊盘上方的驱动电路,以接收来自驱动电路的电压。 压电层可以具有与压力室大致相同的长度。 支撑垫可以由光敏聚合物形成,并且可以具有与压电层基本相同的高度。 上部电极可以包括形成在压电层上的第一部分和形成在支撑垫上的第二部分,并且第二部分可以比第一部分更宽。
    • 7. 发明申请
    • PIEZOELECTRIC ACTUATOR INKJET HEAD AND METHOD OF FORMING THE SAME
    • 压电致动器喷嘴头及其形成方法
    • US20100146756A1
    • 2010-06-17
    • US12712442
    • 2010-02-25
    • Tae-kyung LEEJae-woo ChungKyo-yeol LeeHwa-sun LeeSeung-mo LimJae-chang Lee
    • Tae-kyung LEEJae-woo ChungKyo-yeol LeeHwa-sun LeeSeung-mo LimJae-chang Lee
    • H01L41/22
    • B41J2/14233B41J2002/14491Y10T29/42Y10T29/49002Y10T29/49005Y10T29/4908
    • A piezoelectric actuator of an inkjet head and a method of forming the piezoelectric actuator. The piezoelectric actuator is formed on a vibration plate to provide a driving force to each of a plurality of pressure chambers. The piezoelectric actuator includes a lower electrode formed on the vibration plate, a piezoelectric layer formed on the lower electrode at a position corresponding to each of the pressure chambers, a supporting pad formed on the lower electrode, the supporting pad contacting one end of the piezoelectric layer and extending away from the one end of the piezoelectric layer, and an upper electrode extending from a top surface of the piezoelectric layer to a top surface of the supporting pad. The upper electrode is bonded to a driving circuit above the supporting pad to receive a voltage from the driving circuit. The piezoelectric layer may have substantially the same length as the pressure chamber. The supporting pad may be formed of a photosensitive polymer and may have substantially the same height as the piezoelectric layer. The upper electrode may include a first portion formed on the piezoelectric layer and a second portion formed on the supporting pad, and the second portion may be wider than the first portion.
    • 喷墨头的压电致动器和形成压电致动器的方法。 压电致动器形成在振动板上以向多个压力室中的每一个提供驱动力。 压电致动器包括形成在振动板上的下电极,形成在下电极上的与每个压力室对应的位置处的压电层,形成在下电极上的支撑焊盘,支撑焊盘接触压电体的一端 并且离开压电层的一端延伸,以及从压电层的顶表面延伸到支撑衬垫的顶表面的上电极。 上电极接合到支撑焊盘上方的驱动电路,以接收来自驱动电路的电压。 压电层可以具有与压力室大致相同的长度。 支撑垫可以由光敏聚合物形成,并且可以具有与压电层基本相同的高度。 上部电极可以包括形成在压电层上的第一部分和形成在支撑垫上的第二部分,并且第二部分可以比第一部分更宽。
    • 8. 发明申请
    • Silicon direct bonding method
    • 硅直接键合法
    • US20070155056A1
    • 2007-07-05
    • US11505420
    • 2006-08-17
    • Sung-gyu KangSeung-mo LimJae-chang LeeWoon-bae Kim
    • Sung-gyu KangSeung-mo LimJae-chang LeeWoon-bae Kim
    • H01L21/00
    • H01L21/187H01L21/2007
    • A silicon direct bonding (SDB) method by which void formation caused by gases is suppressed. The SDB method includes: preparing two silicon substrates having corresponding bonding surfaces; forming trenches having a predetermined depth in at least one bonding surface of the two silicon substrates; forming gas discharge outlets connected to the trenches on at least one of the two silicon substrates to vertically penetrate the bonding surface; cleaning the two silicon substrates; closely contacting the two silicon substrates to each other; and thermally treating the two substrates to bond them to each other. The trenches are formed along at least a part of a plurality of dicing lines, and both ends of the trenches are clogged. Gases generated during a thermal treatment process can be smoothly and easily discharged through the trenches and the gas discharge outlet such that a void is prevented from being formed in the junctions of the two silicon substrates due to the gases.
    • 抑制由气体引起的空隙形成的硅直接接合(SDB)方法。 SDB方法包括:制备具有相应粘合表面的两个硅衬底; 在所述两个硅衬底的至少一个接合表面中形成具有预定深度的沟槽; 形成连接到所述两个硅衬底中的至少一个上的沟槽的气体放电出口,以垂直地穿透所述接合表面; 清洁两个硅衬底; 使两个硅衬底彼此紧密接触; 并对两个基板进行热处理以将它们彼此粘合。 沟槽沿着多个切割线的至少一部分形成,并且沟槽的两端被堵塞。 在热处理过程中产生的气体可以通过沟槽和气体排出口平滑且容易地排出,从而防止由于气体而在两个硅衬底的接合处形成空隙。
    • 9. 发明授权
    • Silicon direct bonding method
    • 硅直接键合法
    • US07442622B2
    • 2008-10-28
    • US11505420
    • 2006-08-17
    • Sung-gyu KangSeung-mo LimJae-chang LeeWoon-bae Kim
    • Sung-gyu KangSeung-mo LimJae-chang LeeWoon-bae Kim
    • H01L21/30
    • H01L21/187H01L21/2007
    • A silicon direct bonding (SDB) method by which void formation caused by gases is suppressed. The SDB method includes: preparing two silicon substrates having corresponding bonding surfaces; forming trenches having a predetermined depth in at least one bonding surface of the two silicon substrates; forming gas discharge outlets connected to the trenches on at least one of the two silicon substrates to vertically penetrate the bonding surface; cleaning the two silicon substrates; closely contacting the two silicon substrates to each other; and thermally treating the two substrates to bond them to each other. The trenches are formed along at least a part of a plurality of dicing lines, and both ends of the trenches are clogged. Gases generated during a thermal treatment process can be smoothly and easily discharged through the trenches and the gas discharge outlet such that a void is prevented from being formed in the junctions of the two silicon substrates due to the gases.
    • 抑制由气体引起的空隙形成的硅直接接合(SDB)方法。 SDB方法包括:制备具有相应粘合表面的两个硅衬底; 在所述两个硅衬底的至少一个接合表面中形成具有预定深度的沟槽; 形成连接到所述两个硅衬底中的至少一个上的沟槽的气体放电出口,以垂直地穿透所述接合表面; 清洁两个硅衬底; 使两个硅衬底彼此紧密接触; 并对两个基板进行热处理以将它们彼此粘合。 沟槽沿着多个切割线的至少一部分形成,并且沟槽的两端被堵塞。 在热处理过程中产生的气体可以通过沟槽和气体排出口平滑且容易地排出,从而防止由于气体而在两个硅衬底的接合处形成空隙。