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    • 8. 发明授权
    • Ferroelectric memory device with merged-top plate structure and method for fabricating the same
    • 具有合并顶板结构的铁电存储器件及其制造方法
    • US06913967B2
    • 2005-07-05
    • US10623098
    • 2003-07-18
    • Eun-Seok ChoiSeung-Jin Yeom
    • Eun-Seok ChoiSeung-Jin Yeom
    • H01L21/8242H01L21/02H01L21/8246H01L27/115
    • H01L27/11502H01L27/11507H01L28/55H01L28/57H01L28/60H01L28/65H01L28/75
    • The inventive ferroelectric memory device includes: a semiconductor substrate providing elements of a transistor; a first inter-layer insulating layer formed on the semiconductor substrate; a storage node contact connected to elements of the transistor by passing through the first inter-layer insulating layer; a barrier layer contacting simultaneously to the storage node contact and the first inter-layer insulating layer; a lower electrode having a space for isolating the first inter-layer insulating layer and being formed on the barrier layer; a glue layer being formed on the first inter-layer insulating layer and encompassing lateral sides of the lower electrode as filling the space; a second inter-layer insulating layer exposing a surface of the lower electrode and encompassing the glue layer; a ferroelectric layer formed on the glue layer including the second inter-layer insulating layer; and an upper electrode formed on the ferroelectric layer.
    • 本发明的铁电存储器件包括:提供晶体管元件的半导体衬底; 形成在所述半导体基板上的第一层间绝缘层; 通过穿过所述第一层间绝缘层而连接到所述晶体管的元件的存储节点接触; 与所述存储节点接触部和所述第一层间绝缘层同时接触的阻挡层; 具有用于隔离所述第一层间绝缘层并形成在所述阻挡层上的空间的下电极; 胶层在第一层间绝缘层上形成,并且在下部电极的横向侧面填充空间; 第二层间绝缘层,暴露下电极的表面并包围胶层; 形成在包括第二层间绝缘层的胶层上的铁电层; 以及形成在强电介质层上的上电极。
    • 9. 发明授权
    • Ferroelectric random access memory device and method for fabricating the same
    • 铁电随机存取存储器件及其制造方法
    • US06891211B2
    • 2005-05-10
    • US10612914
    • 2003-07-07
    • Seung-Jin YeomEun-Seok Choi
    • Seung-Jin YeomEun-Seok Choi
    • H01L27/105H01L21/8246H01L27/115H01L31/062
    • H01L27/11502H01L27/11507
    • The present invention is related to a ferroelectric memory device and a method for fabricating the same. The ferroelectric memory device includes: a substrate providing a transistor; a first insulation material with a plane surface formed on the substrate; a storage node contact passing through the first insulation material to contact to an active region of the substrate; a lower electrode being connected to the storage node contact and including a solid solution layer disposed at least as an upper most layer, the solid solution layer being doped with a metal element, which is induced to be in a solid solution state; a second insulation material having a plane surface that exposes a surface of the lower electrode, encompassing the lower electrode and being formed on the first insulation material; a ferroelectric layer covering the second insulation material including the lower electrode; an upper electrode formed on the ferroelectric layer.
    • 本发明涉及铁电存储器件及其制造方法。 铁电存储器件包括:提供晶体管的衬底; 在所述基板上形成有平面的第一绝缘材料; 存储节点接触件穿过所述第一绝缘材料以接触所述衬底的有源区; 下部电极连接到存储节点接触并且包括至少设置为最上层的固溶体层,所述固溶体层掺杂有被诱导为固溶状态的金属元素; 第二绝缘材料,其具有暴露下部电极的表面的平面,包围下部电极并形成在第一绝缘材料上; 覆盖包括下电极的第二绝缘材料的铁电层; 形成在强电介质层上的上电极。