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    • 1. 发明申请
    • Memory module
    • 内存模块
    • US20090154212A1
    • 2009-06-18
    • US12292700
    • 2008-11-24
    • Sung-Joo ParkKyoung-Sun KimYoung-Ho LeeJea-Eun Lee
    • Sung-Joo ParkKyoung-Sun KimYoung-Ho LeeJea-Eun Lee
    • G11C5/02G11C5/06G11C7/00
    • G11C7/20G11C5/04G11C5/066G11C7/1078G11C7/1084G11C7/1093G11C2207/105
    • A memory module, includes a memory module board and a plurality of memory devices on the memory module board. The memory module board includes one or more first input terminals configured to receive first signals to individually control the memory devices, and one or more second input terminals configured to receive second signals to commonly control the memory devices. Each of the memory devices includes a plurality of first signal input units configured to receive the first signals through one or more first input pins, a plurality of second signal input units configured to receive the second signals through one or more second input pins, and a plurality of dummy units, the dummy units being respectively connected to the first signal input units in parallel, and being configured to receive the first signals through one or more third input pins and to compensate for a signal line load.
    • 存储器模块包括存储器模块板和存储器模块板上的多个存储器件。 存储器模块板包括被配置为接收第一信号以单独控制存储器件的一个或多个第一输入端子,以及被配置为接收第二信号以共同控制存储器件的一个或多个第二输入端子。 每个存储器件包括多个第一信号输入单元,其被配置为通过一个或多个第一输入引脚接收第一信号;多个第二信号输入单元,被配置为通过一个或多个第二输入引脚接收第二信号;以及 多个虚拟单元,虚拟单元分别并联连接到第一信号输入单元,并且被配置为通过一个或多个第三输入引脚接收第一信号并补偿信号线负载。
    • 2. 发明授权
    • Memory module
    • 内存模块
    • US07859879B2
    • 2010-12-28
    • US12292700
    • 2008-11-24
    • Sung-Joo ParkKyoung-Sun KimYoung-Ho LeeJea-Eun Lee
    • Sung-Joo ParkKyoung-Sun KimYoung-Ho LeeJea-Eun Lee
    • G11C5/00
    • G11C7/20G11C5/04G11C5/066G11C7/1078G11C7/1084G11C7/1093G11C2207/105
    • A memory module, includes a memory module board and a plurality of memory devices on the memory module board. The memory module board includes one or more first input terminals configured to receive first signals to individually control the memory devices, and one or more second input terminals configured to receive second signals to commonly control the memory devices. Each of the memory devices includes a plurality of first signal input units configured to receive the first signals through one or more first input pins, a plurality of second signal input units configured to receive the second signals through one or more second input pins, and a plurality of dummy units, the dummy units being respectively connected to the first signal input units in parallel, and being configured to receive the first signals through one or more third input pins and to compensate for a signal line load.
    • 存储器模块包括存储器模块板和存储器模块板上的多个存储器件。 存储器模块板包括被配置为接收第一信号以单独控制存储器件的一个或多个第一输入端子,以及被配置为接收第二信号以共同控制存储器件的一个或多个第二输入端子。 每个存储器件包括多个第一信号输入单元,其被配置为通过一个或多个第一输入引脚接收第一信号;多个第二信号输入单元,被配置为通过一个或多个第二输入引脚接收第二信号;以及 多个虚拟单元,虚拟单元分别并联连接到第一信号输入单元,并且被配置为通过一个或多个第三输入引脚接收第一信号并补偿信号线负载。