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1. 发明申请

US20090096008A1 NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090096008A1
公开(公告)日：2009-04-16
申请号：US12249004
申请日：2008-10-10
申请人： Sun-jung Kim , Young-geun Park , Han-mei Choi , Seung-hwan Lee , Se-hoon Oh , Young-sun Kim , Sung-tae Kim
发明人： Sun-jung Kim , Young-geun Park , Han-mei Choi , Seung-hwan Lee , Se-hoon Oh , Young-sun Kim , Sung-tae Kim
IPC分类号： H01L29/788 , H01L23/58
CPC分类号： H01L29/42332 , H01L29/40114 , H01L29/40117 , H01L29/42348
摘要： A nonvolatile memory device having a blocking insulating layer with an excellent data retention property and a method of fabricating the same are provided. The nonvolatile memory device may include a semiconductor substrate having a channel region formed therein; and a gate stack including a tunneling insulating layer, a charge storing layer, a blocking insulating layer and a control gate electrode sequentially stacked on the channel region of the semiconductor substrate. The blocking insulating layer may comprise a lanthanum aluminum oxide having a formula of La2-xAlxOy and the composition parameter x may be 1
摘要翻译：提供了具有优异数据保存性能的阻挡绝缘层的非易失性存储器件及其制造方法。非易失性存储器件可以包括其中形成有沟道区的半导体衬底; 以及栅极堆叠，其包括顺序堆叠在半导体衬底的沟道区上的隧道绝缘层，电荷存储层，阻挡绝缘层和控制栅电极。阻挡绝缘层可以包含具有下式的La 2-x Al x O y的氧化镧铝，组成参数x可以是1

2. 发明申请

US20080096340A1 Method of fabricating a nonvolatile memory device 审中-公开
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20080096340A1
公开(公告)日：2008-04-24
申请号：US11605236
申请日：2006-11-29
申请人： Se-hoon Oh , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
发明人： Se-hoon Oh , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
IPC分类号： H01L21/8238
CPC分类号： H01L29/513 , G11C16/0466 , H01L21/02178 , H01L21/0228 , H01L21/3141 , H01L21/31616 , H01L21/3185 , H01L29/40117
摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a charge blocking layer on the charge trapping layer by supplying sequentially a metal source gas and an oxidizing gas onto the charge trapping layer, such that a supplying time of the oxidizing gas is form about 0.1 second to about 1.0 second, and forming a gate electrode layer on the charge blocking layer.
摘要翻译：一种制造非易失性存储器件的方法包括在半导体衬底上形成电荷隧道层，在电荷隧穿层上形成电荷俘获层，在电荷俘获层上形成电荷阻挡层，依次提供金属源气体和氧化气体进入电荷捕获层，使得氧化气体的供给时间形成约0.1秒至约1.0秒，并在电荷阻挡层上形成栅极电极层。

3. 发明申请

US20080076224A1 METHODS OF FORMING FLASH MEMORY DEVICES INCLUDING BLOCKING OXIDE FILMS 失效
标题翻译：形成包含阻塞氧化膜的闪存存储器件的方法
公开(公告)号：US20080076224A1
公开(公告)日：2008-03-27
申请号：US11756427
申请日：2007-05-31
申请人： Min-kyung Ryu , Han-mei Choi , Seung-hwan Lee , Sun-jung Kim , Se-hoon Oh
发明人： Min-kyung Ryu , Han-mei Choi , Seung-hwan Lee , Sun-jung Kim , Se-hoon Oh
IPC分类号： H01L21/336
CPC分类号： H01L29/513 , H01L21/28079 , H01L21/28088 , H01L21/28194 , H01L21/28282 , H01L29/517 , H01L29/518 , H01L29/78 , H01L29/792
摘要： A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film on the first blocking oxide film at a second temperature higher than the first temperature, and forming a gate electrode on the second blocking oxide film.
摘要翻译：形成闪速存储器件的方法可以包括在半导体衬底上形成隧穿氧化膜，在隧道氧化膜上形成电荷存储层，在第一温度下在电荷存储层上形成第一阻挡氧化膜，形成第二在高于第一温度的第二温度下在第一阻挡氧化膜上形成阻挡氧化膜，以及在第二阻挡氧化膜上形成栅电极。

4. 发明授权

US07820514B2 Methods of forming flash memory devices including blocking oxide films 失效
标题翻译：形成闪存器件的方法包括封闭氧化膜
公开(公告)号：US07820514B2
公开(公告)日：2010-10-26
申请号：US11756427
申请日：2007-05-31
申请人： Min-kyung Ryu , Han-mei Choi , Seung-hwan Lee , Sun-jung Kim , Se-hoon Oh
发明人： Min-kyung Ryu , Han-mei Choi , Seung-hwan Lee , Sun-jung Kim , Se-hoon Oh
IPC分类号： H01L21/336
CPC分类号： H01L29/513 , H01L21/28079 , H01L21/28088 , H01L21/28194 , H01L21/28282 , H01L29/517 , H01L29/518 , H01L29/78 , H01L29/792
摘要： A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film on the first blocking oxide film at a second temperature higher than the first temperature, and forming a gate electrode on the second blocking oxide film.
摘要翻译：形成闪速存储器件的方法可以包括在半导体衬底上形成隧穿氧化膜，在隧道氧化膜上形成电荷存储层，在第一温度下在电荷存储层上形成第一阻挡氧化膜，形成第二在高于第一温度的第二温度下在第一阻挡氧化膜上形成阻挡氧化膜，以及在第二阻挡氧化膜上形成栅电极。

5. 发明申请

US20080096349A1 Method of fabricating a nonvolatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20080096349A1
公开(公告)日：2008-04-24
申请号：US11605452
申请日：2006-11-29
申请人： Ki-yeon Park , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
发明人： Ki-yeon Park , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , H01L21/02178 , H01L21/0228 , H01L21/3143 , H01L21/31604 , H01L21/3162 , H01L29/513 , H01L29/66833
摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a first charge blocking layer on the charge trapping layer by supplying a metal source gas and a first oxidizing gas onto the charge trapping layer, forming a second charge blocking layer on the first charge blocking layer by supplying a metal source gas and a second oxidizing gas onto the first charge blocking layer, wherein the second oxidizing gas has a higher oxidizing power as compared to the first oxidizing gas, and forming a gate electrode layer on the second charge blocking layer.
摘要翻译：一种制造非易失性存储器件的方法包括：在半导体衬底上形成电荷隧穿层，在电荷隧道层上形成电荷俘获层，在电荷俘获层上形成第一电荷阻挡层，通过提供金属源气体和第一在电荷捕获层上氧化气体，通过在第一电荷阻挡层上提供金属源气体和第二氧化气体，在第一电荷阻挡层上形成第二电荷阻挡层，其中第二氧化气体具有较高的氧化能力，并且在第二电荷阻挡层上形成栅极电极层。

6. 发明授权

US06599807B2 Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics 有权
公开(公告)号：US06599807B2
公开(公告)日：2003-07-29
申请号：US10034043
申请日：2001-12-20
申请人： Jae-soon Lim , Seung-hwan Lee , Han-mei Choi , Yun-jung Lee , Gab-jin Nam , Ki-yeon Park , Young-sun Kim , Sung-tae Kim
发明人： Jae-soon Lim , Seung-hwan Lee , Han-mei Choi , Yun-jung Lee , Gab-jin Nam , Ki-yeon Park , Young-sun Kim , Sung-tae Kim
IPC分类号： H01L2972
CPC分类号： H01L28/55
摘要： A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.

7. 发明授权

US07510931B2 Method of fabricating a nonvolatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07510931B2
公开(公告)日：2009-03-31
申请号：US11605452
申请日：2006-11-29
申请人： Ki-yeon Park , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
发明人： Ki-yeon Park , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
IPC分类号： H01L21/336 , H01L21/8238 , H01L21/4763
CPC分类号： H01L29/792 , H01L21/02178 , H01L21/0228 , H01L21/3143 , H01L21/31604 , H01L21/3162 , H01L29/513 , H01L29/66833
摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a first charge blocking layer on the charge trapping layer by supplying a metal source gas and a first oxidizing gas onto the charge trapping layer, forming a second charge blocking layer on the first charge blocking layer by supplying a metal source gas and a second oxidizing gas onto the first charge blocking layer, wherein the second oxidizing gas has a higher oxidizing power as compared to the first oxidizing gas, and forming a gate electrode layer on the second charge blocking layer.
摘要翻译：一种制造非易失性存储器件的方法包括：在半导体衬底上形成电荷隧穿层，在电荷隧道层上形成电荷俘获层，在电荷俘获层上形成第一电荷阻挡层，通过提供金属源气体和第一在电荷捕获层上氧化气体，通过在第一电荷阻挡层上提供金属源气体和第二氧化气体，在第一电荷阻挡层上形成第二电荷阻挡层，其中第二氧化气体具有较高的氧化能力，并且在第二电荷阻挡层上形成栅极电极层。

8. 发明申请

US20050212026A1 Trench capacitors with insulating layer collars in undercut regions and method of fabricating the same 失效
标题翻译：在底切区域具有绝缘层套的沟槽电容器及其制造方法
公开(公告)号：US20050212026A1
公开(公告)日：2005-09-29
申请号：US11037626
申请日：2005-01-18
申请人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
发明人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
IPC分类号： H01L27/108 , H01L21/334 , H01L21/82 , H01L21/8242 , H01L29/94
CPC分类号： H01L27/10867 , H01L27/10829 , H01L27/1087 , H01L29/66181 , H01L29/945
摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
摘要翻译：提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。制造沟槽电容器的一些方法包括在衬底上形成第一层。在与衬底相对的第一层上形成第二层。形成在第一和第二层的顶部上具有开口的掩模。通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。除去第二层下面的第一层的一部分，以在第二层下形成底切区域。在第二层下方的底切区域中形成绝缘层套环。形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。掩埋板沿着第二沟槽形成在衬底中。介电层形成在第二沟槽的内壁和底部上。在电介质层上的第二沟槽中形成存储电极。

9. 发明授权

US07531861B2 Trench capacitors with insulating layer collars in undercut regions 失效
标题翻译：带有绝缘层的沟槽电容器在底切区域
公开(公告)号：US07531861B2
公开(公告)日：2009-05-12
申请号：US12033065
申请日：2008-02-19
申请人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
发明人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
IPC分类号： H01L29/94
CPC分类号： H01L27/10867 , H01L27/10829 , H01L27/1087 , H01L29/66181 , H01L29/945
摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
摘要翻译：提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。制造沟槽电容器的一些方法包括在衬底上形成第一层。在与衬底相对的第一层上形成第二层。形成在第一和第二层的顶部上具有开口的掩模。通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。除去第二层下面的第一层的一部分，以在第二层下形成底切区域。在第二层下方的底切区域中形成绝缘层套环。形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。掩埋板沿着第二沟槽形成在衬底中。介电层形成在第二沟槽的内壁和底部上。在电介质层上的第二沟槽中形成存储电极。

10. 发明申请

US20080135876A1 TRENCH CAPACITORS WITH INSULATING LAYER COLLARS IN UNDERCUT REGIONS 失效
标题翻译：在内陆地区具有绝缘层的TRENCH电容器
公开(公告)号：US20080135876A1
公开(公告)日：2008-06-12
申请号：US12033065
申请日：2008-02-19
申请人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
发明人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
IPC分类号： H01L29/94
CPC分类号： H01L27/10867 , H01L27/10829 , H01L27/1087 , H01L29/66181 , H01L29/945
摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
摘要翻译：提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。制造沟槽电容器的一些方法包括在衬底上形成第一层。在与衬底相对的第一层上形成第二层。形成在第一和第二层的顶部上具有开口的掩模。通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。除去第二层下面的第一层的一部分，以在第二层下形成底切区域。在第二层下方的底切区域中形成绝缘层套环。形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。掩埋板沿着第二沟槽形成在衬底中。介电层形成在第二沟槽的内壁和底部上。在电介质层上的第二沟槽中形成存储电极。

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