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    • 8. 发明申请
    • REDUCING NOISE AND DISTURBANCE BETWEEN MEMORY STORAGE ELEMENTS USING ANGLED WORDLINES
    • 使用ANGLED WORDLINES减少存储元素之间的噪音和干扰
    • US20090154215A1
    • 2009-06-18
    • US11957028
    • 2007-12-14
    • Suketu ParikhVidyut GopalBrad Davis
    • Suketu ParikhVidyut GopalBrad Davis
    • G11C5/06G11C5/02
    • G11C8/08G11C5/063
    • Devices and/or methods that facilitate reducing cross-talk noise and/or complementary bit disturb between adjacent storage elements in a memory device are presented. A memory device includes a memory array with wordlines formed in a zig-zag pattern such that each wordline can have segments that are parallel to the x-axis and other segments that are angled from a direction parallel to the x-axis based in part on a predetermined angle. Adjacent storage elements can be positioned at respective ends of an angled segment of a wordline to facilitate increasing the distance between such storage elements, as compared to the distance between storage elements associated with an orthogonal memory array, where the increase in distance can be based in part on the predetermined angle. The size of the memory array can be the same or substantially the same size, as compared to an orthogonal memory array.
    • 提出了有助于减少存储器件中的相邻存储元件之间的串扰噪声和/或互补位干扰的装置和/或方法。 存储器件包括具有以Z字形图案形成的字线的存储器阵列,使得每个字线可以具有平行于x轴的部分和从平行于x轴的方向成角度的部分,部分地基于 预定角度。 与相对于正交存储器阵列相关的存储元件之间的距离相比,可以将相邻的存储元件定位在字线的成角度段的相应端部,以便于增加这些存储元件之间的距离,其中距离的增加可以基于 部分在预定角度。 与正交存储器阵列相比,存储器阵列的大小可以是相同或基本上相同的大小。