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1. 发明授权

US06328633B1 Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method 有权
公开(公告)号：US06328633B1
公开(公告)日：2001-12-11
申请号：US09483785
申请日：2000-01-14
申请人： Sudhanshu Misra , Pradip Kumar Roy , Sundar Srinivasaan Chetlur , Vivek Saxena
发明人： Sudhanshu Misra , Pradip Kumar Roy , Sundar Srinivasaan Chetlur , Vivek Saxena
IPC分类号： B24B100
CPC分类号： B24B37/044 , C09G1/02
摘要： A polishing fluid comprising a distributed organic phase and a continuous aqueous phase, each phase comprising at least one complexing agent. The aqueous phase also having abrasive particles dispersed therein. Reaction products generated during polishing interact with the aqueous phase complexing agent to form water soluble metallic complexes, the water soluble metallic complexes diffuse to an organic/water interface where they release complexing agent molecules in the aqueous phase and generate metal ions which interact with the organic phase complexing agent to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.

2. 发明授权

US06439972B2 Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method 有权
标题翻译：抛光液，抛光法，半导体器件及半导体器件的制造方法
公开(公告)号：US06439972B2
公开(公告)日：2002-08-27
申请号：US09894117
申请日：2001-06-28
申请人： Sudhanshu Misra , Pradip Kumar Roy , Sundar Srinivasaan Chetlur , Vivek Saxena
发明人： Sudhanshu Misra , Pradip Kumar Roy , Sundar Srinivasaan Chetlur , Vivek Saxena
IPC分类号： B24B2118
CPC分类号： B24B37/044 , C09G1/02
摘要： A polishing fluid comprising a distributed organic phase and a continuous aqueous phase, each phase comprising at least one complexing agent. The aqueous phase also having abrasive particles dispersed therein. Reaction products generated during polishing interact with the aqueous phase complexing agent to form water soluble metallic complexes, the water soluble metallic complexes diffuse to an organic/water interface where they release complexing agent molecules in the aqueous phase and generate metal ions which interact with the organic phase complexing agent to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要翻译：一种包含分布有机相和连续水相的抛光液，每相包含至少一种络合剂。水相中也分散有磨粒。在抛光过程中产生的反应产物与水相络合剂相互作用以形成水溶性金属络合物，水溶性金属络合物扩散到有机/水界面，在那里它们释放水相中的络合剂分子并产生与有机物相互作用的金属离子相络合剂形成有机金属络合物。进一步公开了一种利用抛光液的抛光方法，半导体器件和半导体器件制造方法。

3. 发明授权

US06458289B1 CMP slurry for polishing semiconductor wafers and related methods 有权
标题翻译：用于抛光半导体晶片的CMP浆料及相关方法
公开(公告)号：US06458289B1
公开(公告)日：2002-10-01
申请号：US09413742
申请日：1999-10-06
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： C09K1300
CPC分类号： H01L21/3212
摘要： A CMP slurry includes a first emulsion having a continuous aqueous phase and a second emulsion. The first emulsion includes abrasive particles, and the second emulsion captures metal particles polished from the semiconductor wafer. Thus, metal particles can be removed from the slurry during CMP to avoid damaging and/or contaminating the semiconductor wafer.
摘要翻译： CMP浆料包括具有连续水相和第二乳液的第一乳液。第一乳液包括研磨颗粒，第二乳液捕获从半导体晶片抛光的金属颗粒。因此，在CMP期间可以从浆料中除去金属颗粒，以避免损坏和/或污染半导体晶片。

4. 发明授权

US06375541B1 Polishing fluid polishing method semiconductor device and semiconductor device fabrication method 有权
标题翻译：抛光液抛光法半导体器件及半导体器件制造方法
公开(公告)号：US06375541B1
公开(公告)日：2002-04-23
申请号：US09483576
申请日：2000-01-14
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy , Hem M. Vaidya
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy , Hem M. Vaidya
IPC分类号： B24B100
CPC分类号： B24B37/005 , B24B37/044 , C09G1/02
摘要： A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要翻译：包括分布有机相和连续水相的抛光液。分布相具有至少一种络合剂，水相中分散有磨料颗粒。在抛光过程中产生的反应产物与络合剂相互作用形成有机金属络合物。进一步公开了一种利用抛光液的抛光方法，半导体器件和半导体器件制造方法。

5. 发明授权

US06312565B1 Thin film deposition of mixed metal oxides 有权
标题翻译：复合金属氧化物的薄膜沉积
公开(公告)号：US06312565B1
公开(公告)日：2001-11-06
申请号：US09533428
申请日：2000-03-23
申请人： Sudhanshu Misra , Pradip Kumar Roy
发明人： Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： C01D100
CPC分类号： C01G33/00 , C01G35/00 , C01P2004/82
摘要： Tantalum and niobium aluminate mixed metal oxides may be made by a process comprising mixing a first metal compound selected from the group consisting of aluminum alkoxide, aluminum beta-diketonate, aluminum alkoxide beta-diketonate, and mixtures thereof with a second metal compound selected from the group consisting of niobium alkoxide, niobium beta-diketonate, niobium alkoxide beta-diketonate, tantalum alkoxide, tantalum beta-diketonate, tantalum alkoxide beta-diketonate, and mixtures thereof to provide a precursor and then hydrolyzing the mixture. The resulting mixed metal oxide may be used in a variety of components of integrated circuits.
摘要翻译：钽和铌酸铝混合金属氧化物可以通过以下方法制备，该方法包括将选自烷氧基铝，β-二酮酸铝，烷氧基铝 - 二酮酮及其混合物的第一金属化合物与选自由铌醇盐，β-二酮铌，铌醇盐β-二酮酸盐，钽醇盐，钽β-二酮酸盐，钽醇铝β-二酮酸盐及其混合物组成的组，以提供前体，然后水解该混合物。所得到的混合金属氧化物可用于集成电路的各种组件。

6. 发明授权

US6100587A Silicon carbide barrier layers for porous low dielectric constant materials 失效
公开(公告)号：US6100587A
公开(公告)日：2000-08-08
申请号：US383753
申请日：1999-08-26
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： H01L21/768 , H07L23/485 , H01L21/4763
CPC分类号： H01L21/76831
摘要： Interconnects in porous dielectric materials are coated with a SiC-containing material to inhibit moisture penetration and retention within the dielectric material. Specifically, SiC coatings doped with boron such as SiC(BN) show particularly good results as barrier layers for dielectric interconnects.

7. 发明授权

US06458016B2 Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method 有权
标题翻译：抛光液，抛光法，半导体器件及半导体器件的制造方法
公开(公告)号：US06458016B2
公开(公告)日：2002-10-01
申请号：US09894116
申请日：2001-06-28
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy , Hem M. Vaidya
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy , Hem M. Vaidya
IPC分类号： B24B2118
CPC分类号： B24B37/005 , B24B37/044 , C09G1/02
摘要： A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要翻译：包括分布有机相和连续水相的抛光液。分布相具有至少一种络合剂，水相中分散有磨料颗粒。在抛光过程中产生的反应产物与络合剂相互作用形成有机金属络合物。进一步公开了一种利用抛光液的抛光方法，半导体器件和半导体器件制造方法。

8. 发明授权

US06368200B1 Polishing pads from closed-cell elastomer foam 有权
标题翻译：来自闭孔弹性体泡沫的抛光垫
公开(公告)号：US06368200B1
公开(公告)日：2002-04-09
申请号：US09516836
申请日：2000-03-02
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： B24D1100
CPC分类号： B24B37/24
摘要： A polishing pad formed from closed-cell elastomer foam includes a population of bubbles within the pad. As the pad wears due to polishing and the polishing surface recedes, the freshly formed polishing surface includes pores formed of the newly exposed bubbles. The pores receive and retain polishing slurry and aid in the chemical mechanical polishing process. Pad conditioning is not required because new pores are constantly being created at the pad surface as the surface recedes during polishing. The method for forming the polishing pad includes the injection of gas bubbles into the viscous elastomer material used to form the pad. Process conditions are chosen to maintain gas bubbles within the elastomer material during the curing and solidifying process steps.
摘要翻译：由闭孔弹性体泡沫形成的抛光垫包括垫内的气泡群。当由于抛光而抛光垫磨损并且抛光表面后退时，新形成的抛光表面包括由新露出的气泡形成的孔。孔隙接收和保留抛光浆料并有助于化学机械抛光过程。不需要衬垫调节，因为在抛光期间表面后退时，在衬垫表面上不断产生新的孔。用于形成抛光垫的方法包括将气泡注入用于形成垫的粘性弹性体材料中。选择工艺条件以在固化和固化过程步骤期间保持弹性体材料内的气泡。

9. 发明授权

US06659846B2 Pad for chemical mechanical polishing 有权
标题翻译：化学机械抛光垫
公开(公告)号：US06659846B2
公开(公告)日：2003-12-09
申请号：US09954341
申请日：2001-09-17
申请人： Sudhanshu Misra , Pradip Kumar Roy
发明人： Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： B24B700
CPC分类号： B24B37/245
摘要： An improved polishing pad (22) for use in a chemical mechanical polishing (CMP) operation as part of a semiconductor device fabrication process. The polishing pad is formed of a plurality of particles of abrasive material (24) disposed in a matrix material (26). The abrasive particles may be a stiff inorganic material coated with a coupling agent, and the matrix material may be a polymeric material such as polyurethane. As the polishing pad wears through repeated polishing operations, the newly exposed polishing surface will contain fresh abrasive particles and will exhibit the same polishing properties as the original surface, thereby providing consistent polishing performance throughout the life of the pad without the need for conditioning operations. In one embodiment the distribution of particles of abrasive material per unit volume of matrix material may vary from one portion (23) of the pad to another (25).
摘要翻译：一种用于化学机械抛光（CMP）操作的改进的抛光垫（22），作为半导体器件制造工艺的一部分。抛光垫由设置在基体材料（26）中的多个磨料颗粒（24）形成。研磨颗粒可以是涂覆有偶联剂的刚性无机材料，并且基质材料可以是聚合材料，例如聚氨酯。当抛光垫穿过重复的抛光操作时，新露出的抛光表面将包含新鲜的磨料颗粒，并且将表现出与原始表面相同的抛光性能，从而在焊盘的整个寿命期间提供一致的抛光性能，而不需要调节操作。在一个实施例中，每单位体积的基质材料的研磨材料颗粒的分布可以从垫的一个部分（23）到另一个（25）变化。

10. 发明授权

US06524957B2 Method of forming in-situ electroplated oxide passivating film for corrosion inhibition 失效
标题翻译：形成原位电镀氧化钝化膜的方法进行腐蚀抑制
公开(公告)号：US06524957B2
公开(公告)日：2003-02-25
申请号：US09953706
申请日：2001-09-17
申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
发明人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , H01L21/76834 , H01L21/7684 , H01L21/76888 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method an apparatus for making copper metallic interconnects for semiconductors having an oxide layer deposited in the copper in situ during the deposition of the copper within the via.
摘要翻译：一种用于制造用于半导体的铜金属互连的装置，该铜金属互连件在铜在通孔内沉积期间具有在原位沉积在铜中的氧化物层。

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