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1. 发明申请

US20080043378A1 Pedestals for use as part of magnetic read heads 审中-公开
标题翻译：用作磁读头的一部分的基座
公开(公告)号：US20080043378A1
公开(公告)日：2008-02-21
申请号：US11975267
申请日：2007-10-18
申请人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jei-Wei Chang
发明人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jei-Wei Chang
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： We describe a family of magnetic read heads that each includes a GMR or MTJ stack. A part, no more than about 0.1 microns thick, has been removed from this stack a to form a pedestal having sidewalls comprising a vertical section that includes all of the free layer.
摘要翻译：我们描述了一系列磁头，每个磁头都包含一个GMR或MTJ堆叠。已经从该堆叠a中移除不超过约0.1微米厚的部分，以形成具有包括垂直部分的侧壁的基座，该垂直部分包括所有的自由层。

2. 发明授权

US07320170B2 Xenon ion beam to improve track width definition 失效
标题翻译：氙离子束提高轨道宽度定义
公开(公告)号：US07320170B2
公开(公告)日：2008-01-22
申请号：US10827950
申请日：2004-04-20
申请人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jei-Wei Chang
发明人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jei-Wei Chang
IPC分类号： G11B5/187 , C23F1/02
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
摘要翻译：将氙离子束与合适的掩模一起使用，将GMR堆叠离子研磨直到其一部分厚度不超过约0.1微米已经被去除，使得具有侧壁的基座包括垂直部分，该垂直部分包括全部自由层已形成。然后以通常的方式形成纵向偏置和导电引线层。使用氙气作为溅射气体，可以更精确地控制铣削终止点。

3. 发明授权

US06905811B2 Method to form reduced dimension pattern with good edge roughness 失效
标题翻译：形成具有良好边缘粗糙度的减小尺寸图案的方法
公开(公告)号：US06905811B2
公开(公告)日：2005-06-14
申请号：US10420593
申请日：2003-04-22
申请人： Chao Peng Chen , Chunping Luo , Stuart Kao , Jei-Wei Chang
发明人： Chao Peng Chen , Chunping Luo , Stuart Kao , Jei-Wei Chang
IPC分类号： G03C5/00 , G03F7/00 , G03F7/30 , G03F7/38 , G03F7/40
CPC分类号： G03F7/40 , G03F7/30 , G03F7/38
摘要： As feature sizes approach 0.1 μm or smaller, reduction of line edge roughness (LER) becomes increasingly important. Significant reductions in edge roughness have been achieved by applying a second Ebeam exposure after the initial one that is used to define the pattern. After this second blanket exposure a longer heat treatment and a stronger development process than before are used. In addition to reducing edge roughness the disclosed treatment allows the CD to be reduced under tight control since the amount of CD reduction is proportional to the second Ebeam dosage.
摘要翻译：随着特征尺寸接近0.1μm或更小，线边缘粗糙度（LER）的减小变得越来越重要。通过在用于限定图案的初始曝光之后施加第二次Ebeam曝光，已经实现了边缘粗糙度的显着降低。在第二次曝光之后，使用比以前更长的热处理和更强的显影工艺。除了减少边缘粗糙度之外，所公开的处理允许在紧密控制下CD降低，因为CD减少的量与第二Ebeam剂量成比例。

4. 发明授权

US08236484B2 Single layer resist liftoff process for nano track width 有权
标题翻译：纳米轨道宽度的单层抗剥离工艺
公开(公告)号：US08236484B2
公开(公告)日：2012-08-07
申请号：US10714305
申请日：2003-11-14
申请人： Jei-Wei Chang , Chao-Peng Chen , Chunping Luo , Shou-Chen Kao
发明人： Jei-Wei Chang , Chao-Peng Chen , Chunping Luo , Shou-Chen Kao
IPC分类号： G03F7/40
CPC分类号： G11B5/3163 , G03F7/40 , G03F7/405 , G11B5/3903
摘要： As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.
摘要翻译：随着脱模模式的关键尺寸越来越小，制备具有所需分辨率的剥离抗蚀剂变得越来越困难。通过使用离子束处理和臭氧纤维化的组合来克服这个问题，以形成具有来自单层光致抗蚀剂的底切的剥离图案。离子束工艺用于使抗蚀剂的顶部硬化，同时使用臭氧来氧化和腐蚀下部抗蚀剂侧壁以形成底切。

5. 发明申请

US20050106509A1 Single layer resist liftoff process for nano track width 有权
标题翻译：纳米轨道宽度的单层抗剥离工艺
公开(公告)号：US20050106509A1
公开(公告)日：2005-05-19
申请号：US10714305
申请日：2003-11-14
申请人： Jei-Wei Chang , Chao-Peng Chen , Chunping Luo , Shou-Chen Kao
发明人： Jei-Wei Chang , Chao-Peng Chen , Chunping Luo , Shou-Chen Kao
IPC分类号： G03F7/00 , G03F7/40 , G11B5/31 , G11B5/39
CPC分类号： G11B5/3163 , G03F7/40 , G03F7/405 , G11B5/3903
摘要： As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.
摘要翻译：随着脱模模式的关键尺寸越来越小，制备具有所需分辨率的剥离抗蚀剂变得越来越困难。通过使用离子束处理和臭氧纤维化的组合来克服这个问题，以形成具有来自单层光致抗蚀剂的底切的剥离图案。离子束工艺用于使抗蚀剂的顶部硬化，同时使用臭氧来氧化和腐蚀下部抗蚀剂侧壁以形成底切。

6. 发明授权

US07675718B2 Narrow track CPP head with bias cancellation 有权
标题翻译：窄轨CPP头偏置消除
公开(公告)号：US07675718B2
公开(公告)日：2010-03-09
申请号：US11588564
申请日：2006-10-27
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

7. 发明授权

US07453720B2 Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing 有权
标题翻译：磁性随机存取存储器具有具有相反方向易于偏置的堆叠式触发存储单元
公开(公告)号：US07453720B2
公开(公告)日：2008-11-18
申请号：US11138609
申请日：2005-05-26
申请人： Kochan Ju , Jei-Wei Chang
发明人： Kochan Ju , Jei-Wei Chang
IPC分类号： G11C11/02
CPC分类号： H01L27/222 , G11C11/15 , G11C11/5607 , H01L27/228
摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each stack is located at an intersection region between the two orthogonal write lines. The cells are stacked in pairs, with the cells in each pair having their easy axes of magnetization aligned substantially parallel to one another and nonparallel with the X and Y axes. The cells in each pair have their free layers magnetically biased in opposite directions. Because the free layer of each cell in a pair is biased in a direction opposite to the bias direction of the free layer of the other cell, one cell in a pair can be toggle written without toggle writing the other cell in the pair. The bias fields on the free layers reduces the required switching field for each cell, which results in less write current and a lower-power toggling MRAM.
摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。每个堆栈位于两个正交写入线之间的交叉区域。电池成对堆叠，每对中的电池具有易于相互平行的磁化轴，并且与X轴和Y轴不平行。每对中的电池具有以相反方向磁偏置的自由层。因为一对中的每个单元的自由层在与另一个单元的自由层的偏置方向相反的方向上被偏置，所以一对单元可以被切换而不用切换写入该对中的另一个单元。自由层上的偏置场减少了每个单元所需的切换场，这导致较少的写入电流和较低功率的切换MRAM。

8. 发明授权

US07285836B2 Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing 有权
标题翻译：具有堆叠存储单元的磁性随机存取存储器具有相反方向的硬轴偏置
公开(公告)号：US07285836B2
公开(公告)日：2007-10-23
申请号：US11075900
申请日：2005-03-09
申请人： Kochan Ju , Jei-Wei Chang
发明人： Kochan Ju , Jei-Wei Chang
IPC分类号： H01L29/82 , H01L29/94 , G11C11/50
CPC分类号： H01L27/226 , G11C11/16
摘要： A magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate, with each memory stack having two memory cells stacked along the Z axis and each memory cell having an associated biasing layer. Each biasing layer reduces the switching field of its associated cell by applying a biasing field along the hard-axis of magnetization of the free layer of its associated cell. The free layers in the two cells in each stack have their in-plane easy axes of magnetization aligned parallel to one another. Each biasing layer has its in-plane magnetization direction oriented perpendicular to the easy axis of magnetization (and thus parallel to the hard axis) of the free layer in its associated cell. The hard-axis biasing fields generated by the two biasing layers are in opposite directions.
摘要翻译：磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储器堆栈具有沿Z轴堆叠的两个存储器单元，并且每个存储器单元具有相关联的偏置层。每个偏置层通过沿其相关联的单元的自由层的硬磁化轴施加偏置场来减小其相关单元的切换场。每个堆叠中的两个电池中的自由层具有平行彼此平行的平面内容易的磁化轴。每个偏置层的面内磁化方向垂直于其相关电池中的自由层的易磁化轴（并且因此平行于硬轴）定向。由两个偏压层产生的硬轴偏置磁场处于相反的方向。

9. 发明授权

US07162791B2 Method of manufacturing integrated spin valve head 失效
标题翻译：集成自旋阀头的制造方法
公开(公告)号：US07162791B2
公开(公告)日：2007-01-16
申请号：US11011995
申请日：2004-12-14
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： G11B5/127 , G11B5/83 , H04R31/00
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.
摘要翻译：目前，在制造顶部自旋阀结构的过程中，自旋阀头的屏蔽与屏蔽间隔不能低于约800，这主要是由于传感器与铅的短路问题。现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍层。

10. 发明申请

US20060267056A1 Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing 有权
标题翻译：磁性随机存取存储器具有具有相反方向易于偏置的堆叠式触发存储单元
公开(公告)号：US20060267056A1
公开(公告)日：2006-11-30
申请号：US11138609
申请日：2005-05-26
申请人： Kochan Ju , Jei-Wei Chang
发明人： Kochan Ju , Jei-Wei Chang
IPC分类号： H01L29/94
CPC分类号： H01L27/222 , G11C11/15 , G11C11/5607 , H01L27/228
摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each stack is located at an intersection region between the two orthogonal write lines. The cells are stacked in pairs, with the cells in each pair having their easy axes of magnetization aligned substantially parallel to one another and nonparallel with the X and Y axes. The cells in each pair have their free layers magnetically biased in opposite directions. Because the free layer of each cell in a pair is biased in a direction opposite to the bias direction of the free layer of the other cell, one cell in a pair can be toggle written without toggle writing the other cell in the pair. The bias fields on the free layers reduces the required switching field for each cell, which results in less write current and a lower-power toggling MRAM.
摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。每个堆栈位于两个正交写入线之间的交叉区域。电池成对堆叠，每对中的电池具有易于相互平行的磁化轴，并且与X轴和Y轴不平行。每对中的电池具有以相反方向磁偏置的自由层。因为一对中的每个单元的自由层在与另一个单元的自由层的偏置方向相反的方向上被偏置，所以一对单元可以被切换而不用切换写入该对中的另一个单元。自由层上的偏置场减少了每个单元所需的切换场，这导致较少的写入电流和较低功率的切换MRAM。

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