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1. 发明授权

US06656241B1 Silica-based slurry 失效
标题翻译：二氧化硅基浆料
公开(公告)号：US06656241B1
公开(公告)日：2003-12-02
申请号：US09882548
申请日：2001-06-14
申请人： Stuart D. Hellring , Colin P. McCann , Charles F. Kahle , Yuzhuo Li , Jason Keleher
发明人： Stuart D. Hellring , Colin P. McCann , Charles F. Kahle , Yuzhuo Li , Jason Keleher
IPC分类号： G09G102
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： This invention relates to a slurry composition and a method of its preparation. In particular, the slurry composition of the present invention includes a silica wherein the silica comprises a surface modification. The silica-based slurry of the present invention is suitable for polishing articles and especially useful for chemical-mechanical planarization (“CMP”) of semiconductor and other microelectronic substrates.
摘要翻译：本发明涉及一种浆料组合物及其制备方法。特别地，本发明的浆料组合物包括二氧化硅，其中二氧化硅包括表面改性。本发明的二氧化硅基浆料适用于抛光制品，特别适用于半导体和其他微电子基板的化学机械平面化（“CMP”）。

2. 发明授权

US07279119B2 Silica and silica-based slurry 失效
标题翻译：二氧化硅和二氧化硅基浆料
公开(公告)号：US07279119B2
公开(公告)日：2007-10-09
申请号：US10627776
申请日：2003-07-28
申请人： Stuart D. Hellring , Colin P. McCann , Suryadevara V. Babu , Yuzhuo Li , Satish Narayanan , Robert L. Auger
发明人： Stuart D. Hellring , Colin P. McCann , Suryadevara V. Babu , Yuzhuo Li , Satish Narayanan , Robert L. Auger
IPC分类号： H01I21/302 , C09K5/00
CPC分类号： H01L21/3212 , B82Y30/00 , C01B33/18 , C01B33/193 , C01P2004/50 , C01P2004/51 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/19 , C01P2006/90 , C09G1/02 , C09K3/1409 , C09K3/1436 , C09K3/1463 , C23F3/00 , H01L21/30625 , H01L21/31053
摘要： This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing articles and especially useful for chemical-mechanical planarization of semiconductor substrates and other microelectronic substrates.
摘要翻译：本发明涉及二氧化硅，浆料组合物及其制备方法。特别地，本发明的二氧化硅包括聚集的一次粒子。掺入二氧化硅的浆料组合物适用于抛光制品，特别适用于半导体衬底和其他微电子衬底的化学机械平面化。

3. 发明授权

US06916428B2 Photo-chemical remediation of Cu-CMP waste 失效
公开(公告)号：US06916428B2
公开(公告)日：2005-07-12
申请号：US10678415
申请日：2003-10-03
申请人： Yuzhuo Li , Jason Keleher , Ning Gao
发明人： Yuzhuo Li , Jason Keleher , Ning Gao
IPC分类号： C02F1/30 , C02F1/32 , C02F1/68 , C02F1/70 , C02F1/72
CPC分类号： C02F1/32 , C02F1/30 , C02F1/683 , C02F1/705 , C02F1/725 , C02F2103/16 , C02F2103/346 , C02F2305/10 , Y02W10/37 , Y10S210/912
摘要： A photo-chemical remediation of Cu-CMP waste streams basically includes the following acts: adding photo-catalyst particles into waste streams containing copper ions and organic pollutants and exposing the waste streams to UV light or sunlight to make copper ions become deposited on surfaces of the photo-catalyst particles. Whereby, the copper ions are removed from the waste streams. Meanwhile, organic and inorganic pollutants are decomposed by the photolysis capability of the photo-catalyst to make the waste streams dischargable within environmental standards to the environment.

4. 发明授权

US06508953B1 Slurry for chemical-mechanical polishing copper damascene structures 失效
标题翻译：用于化学机械抛光铜镶嵌结构的浆料
公开(公告)号：US06508953B1
公开(公告)日：2003-01-21
申请号：US09692729
申请日：2000-10-19
申请人： Yuzhuo Li , Jason Keleher
发明人： Yuzhuo Li , Jason Keleher
IPC分类号： C09K1300
CPC分类号： C09G1/02 , C23F3/00
摘要： The present invention provides a chemical-mechanical polishing slurry for use in removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure, and a method of retarding the corrosion of copper lines during the chemical-mechanical polishing of a copper damascene structure using the slurry. The slurry according to the invention includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that is effective to retard the corrosion of the copper lines during chemical-mechanical polishing. Preferred oxidizing agents that release free radicals used in the slurry according to the invention include peroxides, peroxydiphosphates, and persulfates. Preferred non-chelating free radical quenchers used in the slurry according to the invention include ascorbic acid, thiamine, 2-propanol, and alkyl glycols, with ascorbic acid being most preferred.
摘要翻译：本发明提供了一种用于在铜镶嵌结构的制造期间去除覆盖钽基阻挡层的铜的化学机械抛光浆料，以及在铜化学机械抛光期间延缓铜线腐蚀的方法大马士革结构使用浆料。根据本发明的浆料包括释放自由基的氧化剂和非化学自由基猝灭剂，其在化学机械抛光期间有效地延缓铜线的腐蚀。根据本发明的用于释放浆料中的自由基的优选氧化剂包括过氧化物，过氧二磷酸酯和过硫酸盐。用于根据本发明的浆料中的优选的非螯合自由基猝灭剂包括抗坏血酸，硫胺素，2-丙醇和烷基二醇，其中抗坏血酸是最优选的。

5. 发明申请

US20070037491A1 Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing 审中-公开
标题翻译：化学改性化学机械抛光垫，制造改性化学机械抛光垫的工艺和化学机械抛光方法
公开(公告)号：US20070037491A1
公开(公告)日：2007-02-15
申请号：US11202470
申请日：2005-08-12
申请人： Yuzhuo Li , Stuart Hellring , Jason Keleher , Tianxi Zhang
发明人： Yuzhuo Li , Stuart Hellring , Jason Keleher , Tianxi Zhang
IPC分类号： B24B7/30
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/24 , B24D3/346 , B24D13/12
摘要： A method of CMP of a substrate surface includes providing a polishing pad having a polishing layer, that may be substantially free of abrasive particles, with a functional group chemically bonded (covalent or ionic) to the polishing layer. The functional group acts as an activator or catalyst for a compound of a polishing slurry to exhibit a higher material removal rate for removing selected portions of the surface of the substrate than exhibited in CMP of a substantially identical substrate in the presence of a substantially identical polishing slurry and a polishing pad wherein the substantially identical polishing layer does not have the functional group. The functional group may be derived from a compound comprising a polyamine, a polyelectrolyte, and/or an amino acid. A method of making the CMP pad and the CMP pad formed thereby is also disclosed.
摘要翻译：衬底表面的CMP的方法包括提供具有抛光层的抛光垫，抛光层可以基本上没有磨料颗粒，与抛光层化学键合（共价或离子）的官能团。官能团用作抛光浆料化合物的活化剂或催化剂，以在基本上相同的抛光剂存在下，显示更高的材料去除速率，以除去基材表面的选定部分，基本相同的基材CMP 浆料和抛光垫，其中基本相同的抛光层不具有官能团。官能团可以衍生自包含多胺，聚电解质和/或氨基酸的化合物。还公开了一种制造由此形成的CMP焊盘和CMP焊盘的方法。

6. 发明申请

US20050072742A1 Photo-chemical remediation of Cu-CMP waste 失效
标题翻译： Cu-CMP废物的光化学修复
公开(公告)号：US20050072742A1
公开(公告)日：2005-04-07
申请号：US10678415
申请日：2003-10-03
申请人： Yuzhuo Li , Jason Keleher , Ning Gao
发明人： Yuzhuo Li , Jason Keleher , Ning Gao
IPC分类号： C02F1/30 , C02F1/32 , C02F1/68 , C02F1/70 , C02F1/72
CPC分类号： C02F1/32 , C02F1/30 , C02F1/683 , C02F1/705 , C02F1/725 , C02F2103/16 , C02F2103/346 , C02F2305/10 , Y02W10/37 , Y10S210/912
摘要： A photo-chemical remediation of Cu-CMP waste streams basically includes the following acts: adding photo-catalyst particles into waste streams containing copper ions and organic pollutants and exposing the waste streams to UV light or sunlight to make copper ions become deposited on surfaces of the photo-catalyst particles. Whereby, the copper ions are removed from the waste streams. Meanwhile, organic and inorganic pollutants are decomposed by the photolysis capability of the photo-catalyst to make the waste streams dischargable within environmental standards to the environment.
摘要翻译： Cu-CMP废水的光化学修复基本上包括：将光催化剂颗粒添加到含有铜离子和有机污染物的废物流中，并将废物流暴露于紫外线或阳光下，使铜离子沉积在光催化剂颗粒。由此，从废物流中除去铜离子。同时，有机和无机污染物通过光催化剂的光解能力分解，使废物流在环境标准中排放到环境中。

7. 发明申请

US20080034670A1 CHEMICALLY MODIFIED CHEMICAL MECHANICAL POLISHING PAD 审中-公开
标题翻译：化学改性化学机械抛光垫
公开(公告)号：US20080034670A1
公开(公告)日：2008-02-14
申请号：US11841213
申请日：2007-08-20
申请人： Yuzhuo Li , Stuart Hellring , Jason Keleher , Tianxi Zhang
发明人： Yuzhuo Li , Stuart Hellring , Jason Keleher , Tianxi Zhang
IPC分类号： C09K3/14
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/24 , B24D3/346 , B24D13/12
摘要： A method of CMP of a substrate surface includes providing a polishing pad having a polishing layer, that may be substantially free of abrasive particles, with a functional group chemically bonded (covalent or ionic) to the polishing layer. The functional group acts as an activator or catalyst for a compound of a polishing slurry to exhibit a higher material removal rate for removing selected portions of the surface of the substrate than exhibited in CMP of a substantially identical substrate in the presence of a substantially identical polishing slurry and a polishing pad wherein the substantially identical polishing layer does not have the functional group. The functional group may be derived from a compound comprising a polyamine, a polyelectrolyte, and/or an amino acid. A method of making the CMP pad and the CMP pad formed thereby is also disclosed.
摘要翻译：衬底表面的CMP的方法包括提供具有抛光层的抛光垫，抛光层可以基本上没有磨料颗粒，与抛光层化学键合（共价或离子）的官能团。官能团用作抛光浆料化合物的活化剂或催化剂，以在基本上相同的抛光剂存在下，显示更高的材料去除速率，以除去基材表面的选定部分，基本相同的基材CMP 浆料和抛光垫，其中基本相同的抛光层不具有官能团。官能团可以衍生自包含多胺，聚电解质和/或氨基酸的化合物。还公开了一种制造由此形成的CMP焊盘和CMP焊盘的方法。

8. 发明授权

US06660639B2 Method of fabricating a copper damascene structure 有权
标题翻译：铜镶嵌结构的制作方法
公开(公告)号：US06660639B2
公开(公告)日：2003-12-09
申请号：US10266169
申请日：2002-10-07
申请人： Yuzhuo Li , Jason Keleher
发明人： Yuzhuo Li , Jason Keleher
IPC分类号： H01L21302
CPC分类号： C09G1/02 , C23F3/00
摘要： The present invention provides a method of removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure having a plurality of copper lines. The method includes providing a chemical-mechanical polishing slurry and polishing the copper layer using the slurry until the tantalum-based barrier layer is exposed. The slurry includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that retards the corrosion of said copper lines during chemical mechanical polishing. Preferred non-chelating free radical quenchers are ascorbic acid, thiamine, 2-propanol, and alkyl glycols. The present invention also provides copper damascene structures formed according to the method.
摘要翻译：本发明提供一种在具有多条铜线的铜镶嵌结构的制造过程中去除覆盖钽基阻挡层的铜的方法。该方法包括提供化学机械抛光浆料并使用浆料抛光铜层，直到暴露出基于钽的阻挡层。浆料包括释放自由基的氧化剂和非螯合自由基猝灭剂，其在化学机械抛光期间延缓所述铜线的腐蚀。优选的非螯合自由基猝灭剂为抗坏血酸，硫胺素，2-丙醇和烷基二醇。本发明还提供了根据该方法形成的铜镶嵌结构。

9. 发明申请

US20080090500A1 PROCESS FOR REDUCING DISHING AND EROSION DURING CHEMICAL MECHANICAL PLANARIZATION 审中-公开
标题翻译：在化学机械平面化中减少破碎和腐蚀的方法
公开(公告)号：US20080090500A1
公开(公告)日：2008-04-17
申请号：US11735513
申请日：2007-04-16
申请人： Stuart Hellring , Yuzhuo Li , Robert Auger
发明人： Stuart Hellring , Yuzhuo Li , Robert Auger
IPC分类号： B24B29/02
CPC分类号： H01L21/02074 , C09G1/02 , H01L21/3212
摘要： This invention is directed to a slurry system and process of metal removal from a substrate. This invention is useful for polishing a microelectronic device. This invention is especially useful for chemical mechanical planarization of a semiconductor wafer for removal of an overburden thereof. The slurry system of the present invention includes a first slurry and a second slurry, wherein the first slurry has a higher abrasive concentration than the second slurry. The process of the present invention includes a first polish with the first slurry to partially remove metal from the substrate, and a second polish with the second slurry to further remove metal from the substrate.
摘要翻译：本发明涉及一种从衬底去除金属的浆料系统和方法。本发明对于抛光微电子器件是有用的。本发明对于用于去除其上覆层的半导体晶片的化学机械平面化是特别有用的。本发明的浆液系统包括第一浆料和第二浆料，其中第一浆料具有比第二浆料更高的研磨剂浓度。本发明的方法包括第一抛光剂，其具有第一浆料以从基底部分地去除金属，以及第二抛光剂，其具有第二浆料以从基底进一步除去金属。

10. 发明授权

US06620215B2 Abrasive composition containing organic particles for chemical mechanical planarization 失效
公开(公告)号：US06620215B2
公开(公告)日：2003-09-16
申请号：US10023827
申请日：2001-12-21
申请人： Yuzhuo Li , Guomin Bian , Kwok Tang , Joe Zunzi Zhao , John Westbrook , Yong Lin , Leina Chan
发明人： Yuzhuo Li , Guomin Bian , Kwok Tang , Joe Zunzi Zhao , John Westbrook , Yong Lin , Leina Chan
IPC分类号： C09K314
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention is drawn to a composition comprising abrasive particles comprising an organic resin for chemical mechanical planarization (CMP), which can be widely used in the semiconductor industry. The abrasive composition is an aqueous slurry comprising abrasive particles comprising an organic resin, wherein the slurry is held at a pH in the range of 2-12. An attractive feature of the inventive abrasive composition is that it can be tailored to selectively remove different components from the surface. The inventive abrasive composition also provides efficient polishing rates and good surface quality when used in CMP applications.

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