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1. 发明授权

US5788801A Real time measurement of etch rate during a chemical etching process 失效
公开(公告)号：US5788801A
公开(公告)日：1998-08-04
申请号：US827437
申请日：1997-03-27
申请人： Steven George Barbee , Tony Frederick Heinz , Yiping Hsiao , Leping Li , Eugene Henry Ratzlaff , Justin Wai-chow Wong
发明人： Steven George Barbee , Tony Frederick Heinz , Yiping Hsiao , Leping Li , Eugene Henry Ratzlaff , Justin Wai-chow Wong
IPC分类号： G01N17/00 , G01N27/02 , H01L21/66 , G01N27/00
CPC分类号： B24B37/013 , H01L22/26
摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

2. 发明授权

US6072313A In-situ monitoring and control of conductive films by detecting changes in induced eddy currents 失效
标题翻译：通过检测诱导涡流的变化来原位监测和控制导电膜
公开(公告)号：US6072313A
公开(公告)日：2000-06-06
申请号：US876774
申请日：1997-06-17
申请人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
发明人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
IPC分类号： G01B7/00 , G01B7/06 , H01L21/20 , H01L21/302 , H01L21/66
CPC分类号： G01B7/06 , G01B7/10
摘要： The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.
摘要翻译：通过在膜中感应电流来原位监测半导体衬底等底层上的膜的厚度变化，随着膜的厚度变化（增加或减小），检测电流的变化。利用导电膜，通过与包括电容器和电感器的传感器产生交变电磁场，在膜中引起涡流。

3. 发明授权

US5731697A In-situ monitoring of the change in thickness of films 失效
公开(公告)号：US5731697A
公开(公告)日：1998-03-24
申请号：US641470
申请日：1996-05-01
申请人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
发明人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
IPC分类号： G01B7/00 , G01B7/06 , H01L21/20 , H01L21/302 , H01L21/66
CPC分类号： G01B7/06 , G01B7/10
摘要： The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.

4. 发明授权

US5660672A In-situ monitoring of conductive films on semiconductor wafers 失效
标题翻译：半导体晶片导电膜的原位监测
公开(公告)号：US5660672A
公开(公告)日：1997-08-26
申请号：US419208
申请日：1995-04-10
申请人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
发明人： Leping Li , Steven George Barbee , Arnold Halperin , Tony Frederick Heinz
IPC分类号： G01B7/00 , G01B7/06 , G01R31/26 , H01L21/302 , H01L21/3205 , H01L21/66
CPC分类号： G01B7/105
摘要： The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.
摘要翻译：通过在膜中感应电流来原位监测半导体衬底等底层上的膜的厚度变化，随着膜的厚度变化（增加或减小），检测电流的变化。利用导电膜，通过与包括电容器和电感器的传感器产生交变电磁场，在膜中引起涡流。

5. 发明授权

US5728222A Apparatus for chemical vapor deposition of aluminum oxide 失效
标题翻译：氧化铝化学气相沉积装置
公开(公告)号：US5728222A
公开(公告)日：1998-03-17
申请号：US541278
申请日：1995-10-12
申请人： Steven George Barbee , Richard Anthony Conti , Alexander Kostenko , Narayana V. Sarma , Donald Leslie Wilson , Justin Wai-Chow Wong , Steven Paul Zuhoski
发明人： Steven George Barbee , Richard Anthony Conti , Alexander Kostenko , Narayana V. Sarma , Donald Leslie Wilson , Justin Wai-Chow Wong , Steven Paul Zuhoski
IPC分类号： C23C16/40 , C23C16/46 , C23C16/52 , H01L21/205 , H01L21/31 , B05C11/00
CPC分类号： C23C16/403 , C23C16/46 , C23C16/52
摘要： An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor wafers as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate. The apparatus incorporates a heated source material, heated delivery lines, heated inert gas purge lines, a pressure differential mass flow controller, a control system with related valving, and a vacuum process chamber with walls that are temperature controlled as a complete source delivery system to accurately and repeatably provide source vapor for LPCVD deposition of aluminum oxide onto silicon substrates.
摘要翻译：化学气相沉积（CVD）系统中的装置在沉积过程中监测实际的晶片/衬底温度。该设备使得可以生产具有实时晶片/衬底控制的高品质氧化铝膜。使用红外（IR）温度监测装置将实际晶片温度控制到过程温度设定值。这消除了所有的大气温度探测。测试运行和监视晶圆以及执行操作所需的资源的需求被消除，运行成本降低。可以在硅衬底上沉积高质量均匀的氧化铝膜，而不需要额外的光刻步骤来模拟存在于溅射（PVD）型应用中的共形性。结果是所需的工艺步骤减少，随后预期节省设备，循环时间，化学品，减少处理和提高基材上装置的产量。该装置包括加热的源材料，加热的输送管线，加热的惰性气体吹扫管线，压差质量流量控制器，具有相关阀门的控制系统和具有作为完整源输送系统温度控制的壁的真空处理室准确并重复地提供源蒸气，用于LPCVD在硅衬底上沉积氧化铝。

6. 发明授权

US5648113A Aluminum oxide LPCVD system 失效
标题翻译：氧化铝LPCVD系统
公开(公告)号：US5648113A
公开(公告)日：1997-07-15
申请号：US316311
申请日：1994-09-30
申请人： Steven George Barbee , Jonathan Daniel Chapple-Sokol , Richard Anthony Conti , Richard Hsiao , James Anthony O'Neill , Narayana V. Sarma , Donald Leslie Wilson , Justin Wai-Chow Wong , Steven Paul Zuhoski
发明人： Steven George Barbee , Jonathan Daniel Chapple-Sokol , Richard Anthony Conti , Richard Hsiao , James Anthony O'Neill , Narayana V. Sarma , Donald Leslie Wilson , Justin Wai-Chow Wong , Steven Paul Zuhoski
IPC分类号： C23C16/40 , C23C16/448 , C23C16/52 , H01L21/205 , H01L21/31 , H01L21/316
CPC分类号： C23C16/403 , C23C16/4481 , C23C16/52
摘要： A process and apparatus for Al.sub.2 O.sub.3 CVD on silicon wafers using aluminum tri-isopropoxide in a high-volume production environment is presented. The conditions required to use ATI in a production environment and provide maximum utilization of ATI are first of all delivery of ATI via direct evaporation. The ATI source bottle is pumped out (bypassing substrates) until propene and isopropanol signals are reduced to 1% of process pressure before start of aluminum oxide deposition. Either IR spectroscopy or mass spectrometry can be used to provide a control signal to the microprocessor controller. Heating the supplied tetramer to 120.degree. C. for two hours assures complete conversion to trimer. The ATI is stored at 90.degree. C. to minimize decomposition during idle periods and allow recovery of trimer upon return to 120.degree. C. for two hours. During periods of demand, the ATI is held at 120.degree. C. to minimize decomposition.
摘要翻译：提出了一种用于在大量生产环境中使用三异丙氧基铝的硅晶片上的Al 2 O 3 CVD的工艺和装置。在生产环境中使用ATI并提供ATI的最大利用率所需的条件首先通过直接蒸发传送ATI。在开始氧化铝沉积之前，将ATI源瓶泵出（旁路基板），直到丙烯和异丙醇信号降低到过程压力的1％。可以使用IR光谱或质谱法向微处理器控制器提供控制信号。将供应的四聚体加热至120℃保持两小时，确保完全转化为三聚体。将ATI储存在90℃以使空闲期间的分解最小化，并允许在回到120℃回收三聚体两小时。在需求期间，ATI保持在120℃以最小化分解。

7. 发明授权

US5663637A Rotary signal coupling for chemical mechanical polishing endpoint detection with a westech tool 失效
标题翻译：用于西化工具的化学机械抛光终点检测的旋转信号耦合
公开(公告)号：US5663637A
公开(公告)日：1997-09-02
申请号：US620720
申请日：1996-03-19
申请人： Leping Li , Steven George Barbee , Gary Richard Doyle , Arnold Halperin , Kevin L. Holland , Francis Walter Kazak , Robert B. Lipori , Anne Elizabeth McGuire , Rock Nadeau , William Joseph Surovic
发明人： Leping Li , Steven George Barbee , Gary Richard Doyle , Arnold Halperin , Kevin L. Holland , Francis Walter Kazak , Robert B. Lipori , Anne Elizabeth McGuire , Rock Nadeau , William Joseph Surovic
IPC分类号： B24B37/04 , B24B49/00 , H01L21/66 , G01R27/00
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , H01L22/26 , H01L2924/0002
摘要： Rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process. A sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process is coupled to a bottom half of a rotary transformer fixed to a rotating portion of the polisher. A top half of the rotary transformer, coupled to the bottom half of the rotary transformer, is fixed to a stationary portion of the polisher. The signal from the sensor is thus coupled through the rotary transformer to a process monitor.
摘要翻译：旋转信号耦合在原位监测化学机械抛光过程。固定到可旋转晶片载体上的用于产生响应于化学机械抛光工艺的信号的传感器耦合到固定到抛光机旋转部分的旋转变压器的下半部分。旋转变压器的上半部分，连接到旋转变压器的下半部分，固定在抛光机的静止部分。因此，来自传感器的信号通过旋转变压器耦合到过程监视器。

8. 发明授权

US5644221A Endpoint detection for chemical mechanical polishing using frequency or amplitude mode 失效
标题翻译：使用频率或振幅模式进行化学机械抛光的端点检测
公开(公告)号：US5644221A
公开(公告)日：1997-07-01
申请号：US620722
申请日：1996-03-19
申请人： Leping Li , Steven George Barbee , Arnold Halperin
发明人： Leping Li , Steven George Barbee , Arnold Halperin
IPC分类号： H01L21/304 , B24B37/04 , B24B49/02 , G01B7/06 , G01N27/00 , G01R27/00 , G01B27/00
CPC分类号： G01B7/105
摘要： A method and apparatus for endpoint detection in removal of a film from a semiconductor wafer is provided, with a sensor for creating a signal responsive to the film removal process, a positive feedback amplifier coupled to the sensor, the positive feedback amplifier having a mode selector, and an analyzer coupled to the positive feedback amplifier.
摘要翻译：提供了一种用于从半导体晶片去除膜的端点检测的方法和装置，具有响应于膜去除处理产生信号的传感器，耦合到传感器的正反馈放大器，正反馈放大器具有模式选择器以及耦合到正反馈放大器的分析器。

9. 发明授权

US5659492A Chemical mechanical polishing endpoint process control 失效
标题翻译：化学机械抛光终点过程控制
公开(公告)号：US5659492A
公开(公告)日：1997-08-19
申请号：US620721
申请日：1996-03-19
申请人： Leping Li , Steven George Barbee , Arnold Halperin
发明人： Leping Li , Steven George Barbee , Arnold Halperin
IPC分类号： B24B37/013 , B24B49/03 , H01L21/66 , B24B49/16
CPC分类号： B24B37/013 , B24B49/03 , H01L22/26
摘要： A method and apparatus are provided for determining the endpoint for chemical mechanical polishing a film on a wafer. First, a reference point polishing time indicating when a breakthrough of the film has occurred is determined, then an overpolishing time indicating an interval between the reference point polishing time and when the film has been completely polished is determined. To get the total polishing time to the endpoint, the reference point polishing time and the overpolishing time are added.
摘要翻译：提供了一种用于确定化学机械抛光晶片上的薄膜的终点的方法和装置。首先，确定指示膜的突破何时发生的参考点抛光时间，然后确定指示参考点研磨时间与膜完全抛光之间的间隔的过度抛光时间。为了得到终点的总抛光时间，添加了参考点抛光时间和过度抛光时间。

10. 发明授权

US06291351B1 Endpoint detection in chemical-mechanical polishing of cloisonne structures 失效
标题翻译：化妆机械抛光景泰蓝结构的端点检测
公开(公告)号：US06291351B1
公开(公告)日：2001-09-18
申请号：US09605729
申请日：2000-06-28
申请人： Leping Li , Steven George Barbee , Eric James Lee , Francisco A. Martin , Cong Wei
发明人： Leping Li , Steven George Barbee , Eric James Lee , Francisco A. Martin , Cong Wei
IPC分类号： H01L21302
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , G11B5/3116 , G11B5/3163
摘要： A method is described for fabricating a cloisonné structure, in which a top surface of a metal oxide layer is made coplanar with a top surface of a metallic structure formed on a substrate. A nitride layer is deposited on at least the top surface of the metallic structure, and the metal oxide layer is deposited over the metallic structure and the nitride layer. The metal oxide layer is then polished by a chemical-mechanical polishing (CMP) process using a slurry, to expose the nitride layer on the top surface of the metallic structure. Polishing of the nitride layer causes ammonia to be generated in the slurry. The ammonia is extracted as a gas from the slurry, and a signal is generated in accordance with the ammonia concentration. The CMP process is terminated in accordance with a change in the signal. In a preferred embodiment, the metal oxide is aluminum oxide, the nitride is aluminum nitride, and the nitride layer is deposited as a conformal layer on the substrate and the metallic structure.
摘要翻译：描述了一种用于制造景泰蓝结构的方法，其中金属氧化物层的顶表面与形成在基底上的金属结构的顶表面共面。氮化物层沉积在金属结构的至少顶表面上，金属氧化物层沉积在金属结构和氮化物层上。然后通过使用浆料的化学机械抛光（CMP）工艺来抛光金属氧化物层，以暴露金属结构的顶表面上的氮化物层。氮化物层的抛光在浆料中产生氨。从浆液中提取氨作为气体，根据氨浓度产生信号。 CMP过程根据信号的变化而终止。在优选的实施方案中，金属氧化物是氧化铝，氮化物是氮化铝，氮化物层作为保形层沉积在衬底和金属结构上。

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