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1. 发明授权

US5728222A Apparatus for chemical vapor deposition of aluminum oxide 失效
标题翻译：氧化铝化学气相沉积装置
公开(公告)号：US5728222A
公开(公告)日：1998-03-17
申请号：US541278
申请日：1995-10-12
申请人： Steven George Barbee , Richard Anthony Conti , Alexander Kostenko , Narayana V. Sarma , Donald Leslie Wilson , Justin Wai-Chow Wong , Steven Paul Zuhoski
发明人： Steven George Barbee , Richard Anthony Conti , Alexander Kostenko , Narayana V. Sarma , Donald Leslie Wilson , Justin Wai-Chow Wong , Steven Paul Zuhoski
IPC分类号： C23C16/40 , C23C16/46 , C23C16/52 , H01L21/205 , H01L21/31 , B05C11/00
CPC分类号： C23C16/403 , C23C16/46 , C23C16/52
摘要： An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor wafers as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate. The apparatus incorporates a heated source material, heated delivery lines, heated inert gas purge lines, a pressure differential mass flow controller, a control system with related valving, and a vacuum process chamber with walls that are temperature controlled as a complete source delivery system to accurately and repeatably provide source vapor for LPCVD deposition of aluminum oxide onto silicon substrates.
摘要翻译：化学气相沉积（CVD）系统中的装置在沉积过程中监测实际的晶片/衬底温度。该设备使得可以生产具有实时晶片/衬底控制的高品质氧化铝膜。使用红外（IR）温度监测装置将实际晶片温度控制到过程温度设定值。这消除了所有的大气温度探测。测试运行和监视晶圆以及执行操作所需的资源的需求被消除，运行成本降低。可以在硅衬底上沉积高质量均匀的氧化铝膜，而不需要额外的光刻步骤来模拟存在于溅射（PVD）型应用中的共形性。结果是所需的工艺步骤减少，随后预期节省设备，循环时间，化学品，减少处理和提高基材上装置的产量。该装置包括加热的源材料，加热的输送管线，加热的惰性气体吹扫管线，压差质量流量控制器，具有相关阀门的控制系统和具有作为完整源输送系统温度控制的壁的真空处理室准确并重复地提供源蒸气，用于LPCVD在硅衬底上沉积氧化铝。

2. 发明授权

US5648113A Aluminum oxide LPCVD system 失效
标题翻译：氧化铝LPCVD系统
公开(公告)号：US5648113A
公开(公告)日：1997-07-15
申请号：US316311
申请日：1994-09-30
申请人： Steven George Barbee , Jonathan Daniel Chapple-Sokol , Richard Anthony Conti , Richard Hsiao , James Anthony O'Neill , Narayana V. Sarma , Donald Leslie Wilson , Justin Wai-Chow Wong , Steven Paul Zuhoski
发明人： Steven George Barbee , Jonathan Daniel Chapple-Sokol , Richard Anthony Conti , Richard Hsiao , James Anthony O'Neill , Narayana V. Sarma , Donald Leslie Wilson , Justin Wai-Chow Wong , Steven Paul Zuhoski
IPC分类号： C23C16/40 , C23C16/448 , C23C16/52 , H01L21/205 , H01L21/31 , H01L21/316
CPC分类号： C23C16/403 , C23C16/4481 , C23C16/52
摘要： A process and apparatus for Al.sub.2 O.sub.3 CVD on silicon wafers using aluminum tri-isopropoxide in a high-volume production environment is presented. The conditions required to use ATI in a production environment and provide maximum utilization of ATI are first of all delivery of ATI via direct evaporation. The ATI source bottle is pumped out (bypassing substrates) until propene and isopropanol signals are reduced to 1% of process pressure before start of aluminum oxide deposition. Either IR spectroscopy or mass spectrometry can be used to provide a control signal to the microprocessor controller. Heating the supplied tetramer to 120.degree. C. for two hours assures complete conversion to trimer. The ATI is stored at 90.degree. C. to minimize decomposition during idle periods and allow recovery of trimer upon return to 120.degree. C. for two hours. During periods of demand, the ATI is held at 120.degree. C. to minimize decomposition.
摘要翻译：提出了一种用于在大量生产环境中使用三异丙氧基铝的硅晶片上的Al 2 O 3 CVD的工艺和装置。在生产环境中使用ATI并提供ATI的最大利用率所需的条件首先通过直接蒸发传送ATI。在开始氧化铝沉积之前，将ATI源瓶泵出（旁路基板），直到丙烯和异丙醇信号降低到过程压力的1％。可以使用IR光谱或质谱法向微处理器控制器提供控制信号。将供应的四聚体加热至120℃保持两小时，确保完全转化为三聚体。将ATI储存在90℃以使空闲期间的分解最小化，并允许在回到120℃回收三聚体两小时。在需求期间，ATI保持在120℃以最小化分解。

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