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1. 发明授权

US5663637A Rotary signal coupling for chemical mechanical polishing endpoint detection with a westech tool 失效
标题翻译：用于西化工具的化学机械抛光终点检测的旋转信号耦合
公开(公告)号：US5663637A
公开(公告)日：1997-09-02
申请号：US620720
申请日：1996-03-19
申请人： Leping Li , Steven George Barbee , Gary Richard Doyle , Arnold Halperin , Kevin L. Holland , Francis Walter Kazak , Robert B. Lipori , Anne Elizabeth McGuire , Rock Nadeau , William Joseph Surovic
发明人： Leping Li , Steven George Barbee , Gary Richard Doyle , Arnold Halperin , Kevin L. Holland , Francis Walter Kazak , Robert B. Lipori , Anne Elizabeth McGuire , Rock Nadeau , William Joseph Surovic
IPC分类号： B24B37/04 , B24B49/00 , H01L21/66 , G01R27/00
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , H01L22/26 , H01L2924/0002
摘要： Rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process. A sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process is coupled to a bottom half of a rotary transformer fixed to a rotating portion of the polisher. A top half of the rotary transformer, coupled to the bottom half of the rotary transformer, is fixed to a stationary portion of the polisher. The signal from the sensor is thus coupled through the rotary transformer to a process monitor.
摘要翻译：旋转信号耦合在原位监测化学机械抛光过程。固定到可旋转晶片载体上的用于产生响应于化学机械抛光工艺的信号的传感器耦合到固定到抛光机旋转部分的旋转变压器的下半部分。旋转变压器的上半部分，连接到旋转变压器的下半部分，固定在抛光机的静止部分。因此，来自传感器的信号通过旋转变压器耦合到过程监视器。

2. 发明授权

US5723874A Dishing and erosion monitor structure for damascene metal processing 失效
标题翻译：大马士革金属加工的抛光和侵蚀监测结构
公开(公告)号：US5723874A
公开(公告)日：1998-03-03
申请号：US668895
申请日：1996-06-24
申请人： Faye Diann Baker , Daniel Shaw Brooks , Robert Kenneth Leidy , Anne Elizabeth McGuire , Rock Nadeau
发明人： Faye Diann Baker , Daniel Shaw Brooks , Robert Kenneth Leidy , Anne Elizabeth McGuire , Rock Nadeau
IPC分类号： H01L21/00 , H01L21/321 , H01L21/768 , H01L23/544 , H01L23/58 , H01L29/40
CPC分类号： H01L21/67253 , H01L21/7684 , H01L22/34 , H01L2924/0002
摘要： According to the preferred embodiment, an erosion and dishing monitor is provided that facilitates the accurate optimization of a planarization process as in semiconductor process. The dishing monitor comprises at least two monitor structure sets embedded in a semiconductor substrate, the monitor structure sets comprising a plurality of monitor structures connected together with a plurality of connective conductors. The erosion monitor comprises a plurality of elongated conductors embedded into a semiconductor substrate, the plurality of conductors having varying conductor widths and adjacent substrate widths.
摘要翻译：根据优选实施例，提供了一种侵蚀和凹陷监视器，其有助于如半导体工艺中的平坦化处理的精确优化。凹陷监视器包括嵌入在半导体衬底中的至少两个监视器结构集合，所述监视器结构集合包括与多个连接导体连接在一起的多个监视器结构。侵蚀监测器包括嵌入到半导体衬底中的多个细长导体，所述多个导体具有变化的导体宽度和相邻的衬底宽度。

3. 发明授权

US5874318A Dishing and erosion monitor structure for damascene metal processing 失效
标题翻译：大马士革金属加工的抛光和侵蚀监测结构
公开(公告)号：US5874318A
公开(公告)日：1999-02-23
申请号：US746532
申请日：1996-11-13
申请人： Faye Diann Baker , Daniel Shaw Brooks , Robert Kenneth Leidy , Anne Elizabeth McGuire , Rock Nadeau
发明人： Faye Diann Baker , Daniel Shaw Brooks , Robert Kenneth Leidy , Anne Elizabeth McGuire , Rock Nadeau
IPC分类号： H01L21/00 , H01L21/321 , H01L21/768 , H01L23/544
CPC分类号： H01L21/67253 , H01L21/7684 , H01L22/34 , H01L2924/0002
摘要： According to the preferred embodiment, an erosion and dishing monitor and monitor method are provided that facilitates the accurate optimization of a planarization process as in semiconductor process. The dishing monitor comprises at least two monitor structure sets embedded in a semiconductor substrate, the monitor structure sets comprising a plurality of monitor structures connected together with a plurality of connective conductors. The erosion monitor comprises a plurality of elongated conductors embedded into a semiconductor substrate, the plurality of conductors having varying conductor widths and adjacent substrate widths.
摘要翻译：根据优选实施例，提供了一种有助于如半导体工艺中的平坦化处理的精确优化的侵蚀和凹陷监视和监视方法。凹陷监视器包括嵌入在半导体衬底中的至少两个监视器结构集合，所述监视器结构集合包括与多个连接导体连接在一起的多个监视器结构。侵蚀监测器包括嵌入到半导体衬底中的多个细长导体，所述多个导体具有变化的导体宽度和相邻的衬底宽度。

4. 发明授权

US06334807B1 Chemical mechanical polishing in-situ end point system 有权
标题翻译：化学机械抛光原位终点系统
公开(公告)号：US06334807B1
公开(公告)日：2002-01-01
申请号：US09302737
申请日：1999-04-30
申请人： Richard J. Lebel , Rock Nadeau , Martin P. O'Boyle , Paul H. Smith, Jr. , Theodore G. van Kessel , Hemantha K. Wickramasinghe
发明人： Richard J. Lebel , Rock Nadeau , Martin P. O'Boyle , Paul H. Smith, Jr. , Theodore G. van Kessel , Hemantha K. Wickramasinghe
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12
摘要： A structure and method for polishing a device include oscillating a carrier over an abrasive surface (the carrier bringing a polished surface of the device into contact with the abrasive surface, the oscillating allowing a portion of the polished surface to periodically oscillate off the abrasive surface), optically determining a reflective measure of a plurality of locations of the polished surface as the portion of the device oscillates off the abrasive surface and calculating depths of the locations of the polished surface based of the reflective measure.
摘要翻译：用于抛光装置的结构和方法包括将载体摆放在研磨表面上（载体使装置的抛光表面与研磨表面接触，使得抛光表面的一部分周期性地从磨料表面摆动）光学确定抛光表面的多个位置的反射测量，因为该装置的一部分基于该研磨表面摆动并根据反射测量计算抛光表面位置的深度。

5. 发明授权

US06340601B1 Method for reworking copper metallurgy in semiconductor devices 失效
标题翻译：半导体器件中铜冶炼的再加工方法
公开(公告)号：US06340601B1
公开(公告)日：2002-01-22
申请号：US09476237
申请日：1999-12-30
申请人： Thomas F. Curran, Jr. , Timothy C. Krywanczyk , Michael S. Lube , Matthew D. Moon , Rock Nadeau , Clark D. Reynolds , Dean A. Schaffer , Joel M. Sharrow , Paul H. Smith, Jr. , David C. Thomas , Eric J. White , Kenneth H. Yao
发明人： Thomas F. Curran, Jr. , Timothy C. Krywanczyk , Michael S. Lube , Matthew D. Moon , Rock Nadeau , Clark D. Reynolds , Dean A. Schaffer , Joel M. Sharrow , Paul H. Smith, Jr. , David C. Thomas , Eric J. White , Kenneth H. Yao
IPC分类号： H01L214763
CPC分类号： H01L21/76892
摘要： A method of reworking copper metallurgy on semiconductor devices which includes selective removal of insulator, selective removal of copper, non-selective removal of copper and insulator followed by the redeposition of an insulating copper barrier layer and at least one metallurgical interconnect layer.
摘要翻译：一种对半导体器件上的铜冶炼进行再加工的方法，包括绝缘体的选择性去除，铜的选择性去除，铜和绝缘体的非选择性去除，然后再沉积绝缘铜阻挡层和至少一个冶金互连层。

6. 发明授权

US6022266A In-situ pad conditioning process for CMP 有权
标题翻译： CMP原位垫调理工艺
公开(公告)号：US6022266A
公开(公告)日：2000-02-08
申请号：US169382
申请日：1998-10-09
申请人： Timothy Scott Bullard , Richard John Lebel , Rock Nadeau , Paul Henry Smith, Jr.
发明人： Timothy Scott Bullard , Richard John Lebel , Rock Nadeau , Paul Henry Smith, Jr.
IPC分类号： B24B37/04 , B24B53/007 , B24B53/00
CPC分类号： B24B53/017 , B24B37/042
摘要： An improved method of in-situ conditioning of a polishing pad for use with a stationary pad conditioner during chemical mechanical polishing is described. A polishing table having a polishing pad on its surface is rotated in a first direction during polishing of a semiconductor wafer. A polishing pad conditioner is adjustably attached to the rotating polishing table such that the conditioner is stationary in relation to the rotating polishing table. The conditioner has a roughened surface which is in contact with the polishing pad providing in-situ conditioning during polishing of a semiconductor wafer. After polishing of the semiconductor wafer, the polishing table is rotated in a second direction while the conditioner is still in contact with polishing pad. Rotating the polishing pad in a second direction dislodges the polishing debris clogging the roughened surface of the conditioner and redistributes CMP slurry. The roughened surface of the pad conditioner is refreshed allowing more effective conditioning of the polishing pad. Pad life is prolonged, polishing is stabilized, and the polish cycle time is reduced.
摘要翻译：描述了在化学机械抛光期间用于与固定衬垫调节器一起使用的抛光垫的现场调节的改进方法。在半导体晶片的研磨过程中，在其表面上具有抛光垫的抛光台在第一方向上旋转。抛光垫调节器可调节地附接到旋转的抛光台，使得调节器相对于旋转的抛光台静止。调理剂具有与抛光垫接触的粗糙表面，在抛光半导体晶片期间提供原位调节。在抛光半导体晶片之后，抛光台在第二方向旋转，同时调节器仍然与抛光垫接触。在第二个方向上旋转抛光垫将抛光碎屑堵塞在调理剂的粗糙表面上并重新分布CMP浆料。擦洗垫调节剂的粗糙表面被刷新，从而可以更有效地调理抛光垫。焊垫寿命延长，抛光稳定，抛光周期缩短。

7. 发明授权

US06458020B1 Slurry recirculation in chemical mechanical polishing 失效
标题翻译：化学机械抛光中的浆料再循环
公开(公告)号：US06458020B1
公开(公告)日：2002-10-01
申请号：US09683086
申请日：2001-11-16
申请人： Jeffrey A. Brigante , Thomas L. Conrad , David J. Fontaine , Rock Nadeau , Paul H. Smith, Jr. , Theodore G. van Kessel
发明人： Jeffrey A. Brigante , Thomas L. Conrad , David J. Fontaine , Rock Nadeau , Paul H. Smith, Jr. , Theodore G. van Kessel
IPC分类号： B24B100
CPC分类号： B24B37/04 , B24B57/02
摘要： A recirculation mechanism is used to force slurry toward the center of a platen used for chemical-mechanical polishing. The recirulator captures the slurry that would otherwise be flung from a rotating platen because of centrifugal force. The captured slurry is forced upwardly away from the surface of the platen and toward the center of the platen to recycle the slurry.
摘要翻译：使用再循环机构来迫使浆料朝向用于化学机械抛光的压板的中心。回转器捕获由于离心力而否则将从旋转压板甩出的浆料。被捕获的浆料被迫从压板的表面向上远离压板的中心以再循环浆料。

8. 发明授权

US06579149B2 Support and alignment device for enabling chemical mechanical polishing rinse and film measurements 有权
公开(公告)号：US06579149B2
公开(公告)日：2003-06-17
申请号：US09777548
申请日：2001-02-06
申请人： Richard J. Lebel , Frederic Maurer , Rock Nadeau , Paul H. Smith, Jr. , Hemantha K. Wickramasinghe , Theodore G. van Kessel
发明人： Richard J. Lebel , Frederic Maurer , Rock Nadeau , Paul H. Smith, Jr. , Hemantha K. Wickramasinghe , Theodore G. van Kessel
IPC分类号： B24B4900
CPC分类号： H01L21/681
摘要： A device and method for providing precision alignment and support for an optical film measurement probe in the wafer rinse tank of a CMP polish tool. The device includes of a probe carrier, and spring loaded support guides attached to a support ring that supports and locates the mechanism in the rinse tank of the CMP tool. The probe carrier has multiple beveled bearing pads (three or more) that contact the rim of the rotating wafer chuck. Pressure from the chuck against these pads forces the probe carrier to maintain a fixed distance and orientation relative to the wafer while allowing the smooth rotation and motion of the wafer and chuck. Further, an integrated the wafer spray nozzles can be attached to the probe carrier that is located so as to minimize interference between wafer spraying and the probe carrier.

9. 发明授权

US06319093B1 Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement 失效
标题翻译：化学机械抛光系统和旋转干膜厚度测量方法
公开(公告)号：US06319093B1
公开(公告)日：2001-11-20
申请号：US09777380
申请日：2001-02-06
申请人： Richard J. Lebel , Frederic Maurer , Rock Nadeau , Paul H. Smith, Jr. , Hemantha K. Wickramasinghe , Theodore G. van Kessel
发明人： Richard J. Lebel , Frederic Maurer , Rock Nadeau , Paul H. Smith, Jr. , Hemantha K. Wickramasinghe , Theodore G. van Kessel
IPC分类号： B24B3700
CPC分类号： B24B37/345 , B24B37/013 , B24B49/12 , H01L21/67253
摘要： A system and method that integrates film thickness measurements with a chemical-mechanical polishing (CMP) spin-dry tool. By doing so, each wafer can be measured as it comes out of the previous CMP process. Thickness measurement feedback is provided, which controls processing of the wafer and also monitor operational status of a CMP polishing unit prior to completion of the wafer being polished, resulting in significant cost and cycle time reduction through the elimination of tool infrastructure and wafer handling by assuring proper tolerances of the CMP polishing unit are maintained.
摘要翻译：将薄膜厚度测量与化学机械抛光（CMP）旋转干燥工具集成的系统和方法。通过这样做，可以测量每个晶片，因为它从先前的CMP工艺出来。提供厚度测量反馈，其控制晶片的处理并且还可以在抛光晶片完成之前监测CMP抛光单元的操作状态，从而通过消除工具基础设施和晶片处理来确保显着的成本和循环时间减少保持CMP抛光单元的适当公差。

10. 发明授权

US5885135A CMP wafer carrier for preferential polishing of a wafer 失效
标题翻译：用于晶片优先抛光的CMP晶片载体
公开(公告)号：US5885135A
公开(公告)日：1999-03-23
申请号：US842129
申请日：1997-04-23
申请人： Daniel D. Desorcie , Richard J. Lebel , Charles A. McKinney , Rock Nadeau , Timothy J. Rickard, Jr. , Paul H. Smith, Jr. , Douglas K. Sturtevant , Matthew T. Tiersch
发明人： Daniel D. Desorcie , Richard J. Lebel , Charles A. McKinney , Rock Nadeau , Timothy J. Rickard, Jr. , Paul H. Smith, Jr. , Douglas K. Sturtevant , Matthew T. Tiersch
IPC分类号： B24B41/06 , H01L21/302 , H01L21/304 , B24B1/00
CPC分类号： B24B37/102 , B24B37/30 , B24B41/06 , H01L21/302
摘要： An apparatus for polishing a semiconductor wafer is provided which includes a wafer carrier having on its lower surface a non-uniform surface structure means to vary the force against a wafer during a polishing operation so that the polishing is enhanced and imparts a planar surface across the polished wafer. Preferred non-uniform surface structure means include use of a wafer carrier having on its lower surface a backing film having a first central portion having a predetermined compressibility and a second peripheral portion having a different compressibility than the first portion. Another non-uniform surface structure means to vary the force against the wafer comprises a wafer carrier having on its lower surface a raised circumferential region around the periphery of the carrier.
摘要翻译：提供了一种用于抛光半导体晶片的装置，其包括晶片载体，该晶片载体在其下表面具有不均匀的表面结构装置，以在抛光操作期间改变对晶片的力，使得抛光被增强并且在平面抛光晶圆。优选的不均匀表面结构包括使用晶片载体，其在其下表面具有背衬膜，该背衬膜具有具有预定压缩性的第一中心部分和具有与第一部分不同的可压缩性的第二周边部分。另一种不均匀的表面结构意味着改变对晶片的力包括晶片载体，其在其下表面上具有围绕载体周边的凸起的周向区域。

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