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1. 发明申请

US20070120129A1 Rare earth doped layer or substrate for light conversion 有权
标题翻译：用于光转换的稀土掺杂层或衬底
公开(公告)号：US20070120129A1
公开(公告)日：2007-05-31
申请号：US11353647
申请日：2006-02-13
申请人： Steven DenBaars , Eric Tarsa , Michael Mack , Bernd Keller , Brian Thibeault , Adam Saxler
发明人： Steven DenBaars , Eric Tarsa , Michael Mack , Bernd Keller , Brian Thibeault , Adam Saxler
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/0756 , H01L27/15 , H01L33/025 , H01L33/30 , H01L33/343 , H01L33/465 , H01L33/502 , H01L2224/8592 , H01L2924/0002 , H01S5/405 , H01S5/4087 , H01L2924/00
摘要： A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.
摘要翻译：一种固态发光器件，包括具有半导体材料的有源区的发射极结构和在该有源区的相对侧上的一对相对掺杂的半导体材料层。响应于穿过掺杂层的电偏压，有源区域以预定波长发光。包括与所述发射极结构成一体并掺杂有至少一种稀土或过渡元素的半导体材料的吸收层。吸收层吸收从有源区域发射的至少一些光并且再发射至少一个不同波长的光。发射体结构和衬底上设置的吸收层包括衬底。

2. 发明申请

US20060255347A1 Multi element, multi color solid state LED/laser 有权
公开(公告)号：US20060255347A1
公开(公告)日：2006-11-16
申请号：US11484233
申请日：2006-07-10
申请人： Steven DenBaars , Eric Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
发明人： Steven DenBaars , Eric Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.

3. 发明申请

US20060131599A1 Light emitting diodes including pedestals 审中-公开
标题翻译：包括基座的发光二极管
公开(公告)号：US20060131599A1
公开(公告)日：2006-06-22
申请号：US11338918
申请日：2006-01-25
申请人： David Slater , Robert Glass , Charles Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric Tarsa
发明人： David Slater , Robert Glass , Charles Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric Tarsa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. The first face of the substrate may include therein a plurality of grooves that define the plurality of triangular pedestals in the substrate. The grooves may include tapered sidewalls and/or a beveled floor. The first face of the substrate also may include therein an array of via holes. The via holes may include tapered sidewalls and/or a floor.
摘要翻译：发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底，其被图案化以在横截面中限定多个基座，其从第一面朝向第二张脸。第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域，使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。衬底的第一面可以包括在衬底中限定多个三角形基座的多个凹槽。凹槽可以包括锥形侧壁和/或斜面底板。衬底的第一面也可以包括一组通孔。通孔可以包括锥形侧壁和/或底板。

4. 发明申请

US20070284604A1 LIGHT EMITTING DIODES INCLUDING TRANSPARENT OXIDE LAYERS 有权
标题翻译：发光二极管，包括透明氧化层
公开(公告)号：US20070284604A1
公开(公告)日：2007-12-13
申请号：US11842350
申请日：2007-08-21
申请人： David Slater , Robert Glass , Charles Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric Tarsa
发明人： David Slater , Robert Glass , Charles Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric Tarsa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. A reflector is provided between the mounting support and the diode region, that is configured to reflect light that is emitted from the diode region back into the diode region, through the substrate that is transparent to optical radiation in the predetermined wavelength range and from the plurality of pedestals, upon application of voltage across the diode region. A layer of Indium Tin Oxide (ITO) is provided between the reflector and the diode region.
摘要翻译：发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底，其被图案化以在横截面中限定多个基座，其从第一面朝向第二张脸。第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域，使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。在安装支撑件和二极管区域之间提供反射器，其被配置为将从二极管区域发射的光反射回二极管区域，穿过对于预定波长范围内的光辐射透明的基板和从多个在二极管区域施加电压时，在反射器和二极管区域之间设置一层氧化铟锡（ITO）。

5. 发明授权

US08035117B2 Multi element, multi color solid state LED/laser 有权
标题翻译：多元素，多色固态LED /激光
公开(公告)号：US08035117B2
公开(公告)日：2011-10-11
申请号：US11484233
申请日：2006-07-10
申请人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
发明人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition elements. The dopant ions absorb some or all of the light from the LED's active layer, pumping the dopant ion electrons to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green, blue and UV light, such that the LED emits green, blue, red and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state lasers having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth of transition elements.
摘要翻译：在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子电子泵送到更高的能量状态。电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。铬离子吸收紫外光，激发离子上的电子到更高的能量状态。当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色，蓝色和紫外光的有源层，使得LED发射绿色，蓝色，红色和紫外光，结合以产生白光。或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。本发明还能够在各种色调上提供可调LED。本发明也适用于具有一个或多个有源层发射紫外光的固态激光器，其中激光生长在掺杂有一个或多个稀土过渡元素的蓝宝石衬底上。

6. 发明授权

US07202506B1 Multi element, multi color solid state LED/laser 有权
标题翻译：多元素，多色固态LED /激光
公开(公告)号：US07202506B1
公开(公告)日：2007-04-10
申请号：US09528262
申请日：2000-03-17
申请人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
发明人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
摘要翻译：在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。铬离子吸收紫外光，激发离子上的电子到更高的能量状态。当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层，使得LED发射绿色，蓝色，红色光和UV光，其组合以产生白光。或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。本发明还能够在各种色调上提供可调LED。本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器，其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。

7. 发明授权

US07084436B2 Multi element, multi color solid state LED/laser 有权
标题翻译：多元素，多色固态LED /激光
公开(公告)号：US07084436B2
公开(公告)日：2006-08-01
申请号：US10815426
申请日：2004-03-31
申请人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
发明人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
摘要翻译：在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。铬离子吸收紫外光，激发离子上的电子到更高的能量状态。当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层，使得LED发出绿色，蓝色，红色光和UV光，其组合以产生白光。或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。本发明还能够在各种色调上提供可调LED。本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器，其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。

8. 发明授权

US08829546B2 Rare earth doped layer or substrate for light conversion 有权
标题翻译：用于光转换的稀土掺杂层或衬底
公开(公告)号：US08829546B2
公开(公告)日：2014-09-09
申请号：US11353647
申请日：2006-02-13
申请人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault , Adam W. Saxler
发明人： Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault , Adam W. Saxler
IPC分类号： H01L33/02 , H01L33/08 , H01L33/30 , H01L33/46 , H01S5/40 , H01L33/34 , H01L27/15 , H01L33/50 , H01L25/075
CPC分类号： H01L33/08 , H01L25/0756 , H01L27/15 , H01L33/025 , H01L33/30 , H01L33/343 , H01L33/465 , H01L33/502 , H01L2224/8592 , H01L2924/0002 , H01S5/405 , H01S5/4087 , H01L2924/00
摘要： A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.
摘要翻译：一种固态发光器件，包括具有半导体材料的有源区的发射极结构和在该有源区的相对侧上的一对相对掺杂的半导体材料层。响应于穿过掺杂层的电偏压，有源区域以预定波长发光。包括与所述发射极结构成一体并掺杂有至少一种稀土或过渡元素的半导体材料的吸收层。吸收层吸收从有源区域发射的至少一些光并且再发射至少一个不同波长的光。发射体结构和衬底上设置的吸收层包括衬底。

9. 发明授权

US09159888B2 Wafer level phosphor coating method and devices fabricated utilizing method 有权
标题翻译：晶圆级荧光粉涂布方法及利用方法制造的器件
公开(公告)号：US09159888B2
公开(公告)日：2015-10-13
申请号：US11899790
申请日：2007-09-07
申请人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , Yankun Fu
发明人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , James Seruto , Yankun Fu
IPC分类号： H01L33/00 , H01L33/50 , H01L33/62 , H01L33/38 , H01L33/36 , H01L33/44 , H01L33/54
CPC分类号： H01L33/508 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/44 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
摘要翻译：制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。基座沉积在LED上，每个基座与其中一个LED电接触。在LED上形成涂层，其中涂层埋入至少一些基座。然后将涂层平坦化以暴露至少一些埋置的基座，同时在所述LED上留下至少一些所述涂层。然后可以例如通过引线接合露出的基座。本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。

10. 发明授权

US08941134B2 Leadframe-based packages for solid state light emitting devices having heat dissipating regions in packaging 有权
标题翻译：用于在封装中具有散热区域的固态发光器件的基于引线框的封装
公开(公告)号：US08941134B2
公开(公告)日：2015-01-27
申请号：US13242103
申请日：2011-09-23
申请人： Ban P. Loh , Nicholas W. Medendorp, Jr. , Eric Tarsa , Bernd Keller
发明人： Ban P. Loh , Nicholas W. Medendorp, Jr. , Eric Tarsa , Bernd Keller
IPC分类号： H01L33/62 , H01L23/495 , H01L33/48 , H01L33/64 , H01L23/498 , H01L25/075
CPC分类号： H01L33/483 , H01L23/49861 , H01L24/73 , H01L25/0753 , H01L33/486 , H01L33/62 , H01L33/641 , H01L33/642 , H01L33/647 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/01019 , H01L2924/01068 , H01L2924/01322 , H01L2924/3011 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A modular package for a light emitting device includes a leadframe including a first region having a top surface, a bottom surface and a first thickness and a second region having a top surface, a bottom surface and a second thickness that is less than the first thickness. The leadframe further includes an electrical lead extending laterally away from the second region, and the package further includes a thermoset package body on the leadframe and surrounding the first region. The thermoset package body may be on both the top and bottom surfaces of the second region. A leak barrier may be on the leadframe, and the package body may be on the leak barrier. Methods of forming modular packages including thermoset package bodies on leadframes are also disclosed.
摘要翻译：用于发光器件的模块化封装包括引线框架，其包括具有顶表面，底表面和第一厚度的第一区域和具有小于第一厚度的顶表面，底表面和第二厚度的第二区域。引线框还包括从第二区域横向延伸的电引线，并且封装件还包括在引线框上并围绕第一区域的热固性封装主体。热固性封装体可以在第二区域的顶表面和底表面上。泄漏屏障可以在引线框架上，并且封装主体可以在泄漏屏障上。还公开了在引线框架上形成包括热固性封装体的模块化封装的方法。

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