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1. 发明申请

US20060234139A1 Systems and methods for modifying a reticle's optical properties 有权
标题翻译：用于修改掩模版光学性质的系统和方法
公开(公告)号：US20060234139A1
公开(公告)日：2006-10-19
申请号：US11394901
申请日：2006-03-31
申请人： Sterling Watson , Ady Levy , Chris Mack , Stanley Stokowski , Zain Saidin , Larry Zurbrick
发明人： Sterling Watson , Ady Levy , Chris Mack , Stanley Stokowski , Zain Saidin , Larry Zurbrick
IPC分类号： G03F1/00 , G03C5/00 , G06K9/00
CPC分类号： G06K9/2063 , G03F1/72 , G03F1/84 , Y10S430/146
摘要： Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.
摘要翻译：公开了用于修改掩模版的系统和方法。通常，来自多个晶片的检查结果或来自光刻模型的预测结果被用于单独地减小光罩的特定位置处的剂量或任何其它光学特性。在一个实施例中，掩模版的任何合适的光学性质通过光束（例如毫微微秒级激光器）在掩模版上的特定位置处被修改，以便加宽用于这种光学性质的工艺窗口。光学性质的实例包括剂量，相位，照射角度和双折射率。使用光束在光罩上的特定位置处调整光学特性的技术可以用于除加宽工艺窗口之外的其它目的。

2. 发明申请

US20060240336A1 Systems and methods for mitigating variances on a patterned wafer using a prediction model 有权
标题翻译：使用预测模型减轻图案化晶片上的方差的系统和方法
公开(公告)号：US20060240336A1
公开(公告)日：2006-10-26
申请号：US11394900
申请日：2006-03-31
申请人： Sterling Watson , Ady Levy , Chris Mack , Stanley Stokowski , Zain Saidin
发明人： Sterling Watson , Ady Levy , Chris Mack , Stanley Stokowski , Zain Saidin
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/84 , G03F1/36 , Y10S430/146
摘要： Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.
摘要翻译：公开了用于减轻图案化晶片上的方差（例如，临界尺寸方差）的系统和方法。通常，使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。在具体实现中，诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版，并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积在指定位置。在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量，以便减轻使用修改的掩模版图案化的晶片上识别的方差。

3. 发明申请

US20060234144A1 Method for monitoring a reticle 有权
标题翻译：监测掩模版的方法
公开(公告)号：US20060234144A1
公开(公告)日：2006-10-19
申请号：US11394145
申请日：2006-03-29
申请人： Sterling Watson , Ady Levy , Chris Mack , Stanley Stokowski , Zain Saidin
发明人： Sterling Watson , Ady Levy , Chris Mack , Stanley Stokowski , Zain Saidin
IPC分类号： G03F1/00 , G03C5/00 , G06K9/00
CPC分类号： G03F1/84 , G03F1/38 , G03F1/50 , G03F7/70433 , G03F7/70625 , Y10S430/146
摘要： Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may “heal” the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.
摘要翻译：网状物可以包括用于局部改变光罩光学性质的遮蔽元件（SE）。然而，由于辐射可能“治愈”SE，因此在光刻过程中由于反复暴露于辐射而导致这样的掩模版可能随时间而降解。公开了用于监测掩模版的技术，以便保持关于掩模版的光学性质和将使用掩模版印刷的晶片上的图案的均匀性的置信度。网格线进行定期检查，包括掩模版传输测量和/或掩模版的空中成像。当这种检查表明足够的掩模版降解时，标线片被标记以在其后续在光刻工艺中使用之前进行校正。

4. 发明申请

US20060234145A1 Method for determining and correcting reticle variations 有权
标题翻译：确定和校正标线差异的方法
公开(公告)号：US20060234145A1
公开(公告)日：2006-10-19
申请号：US11394177
申请日：2006-03-29
申请人： Sterling Watson , Ady Levy , Chris Mack , Stanley Stokowski , Zain Saidin
发明人： Sterling Watson , Ady Levy , Chris Mack , Stanley Stokowski , Zain Saidin
IPC分类号： G03F1/00 , G03C5/00 , G06K9/00
CPC分类号： G03F1/84 , Y10S430/146
摘要： Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.
摘要翻译：公开了用于使用通过将测量的标线参数的集合与一组参考掩模版参数进行比较而生成的光罩全局变化图来确定和校正光罩变化的技术。通过掩模版检查获得测量的掩模版参数，并且变化图识别标线区域和相关联的校正水平。在一个实施例中，将变化数据传送到通过在标定的标线区域内的散射中心嵌入来修改掩模版的系统，从而改善变化。在另一个实施例中，变化数据被传送到晶片步进器或扫描器，该晶片步进器或扫描器又改变了使用掩模版制造晶片的条件，从而补偿了根据设计的变化和生产晶片。

5. 发明申请

US20070140548A1 System and method for determining reticle defect printability 审中-公开
标题翻译：用于确定掩模版缺陷可印刷性的系统和方法
公开(公告)号：US20070140548A1
公开(公告)日：2007-06-21
申请号：US11603536
申请日：2006-11-22
申请人： Anthony Vacca , Thomas Vavul , Donald Parker , Zain Saidin , Sterling Watson , James Wiley
发明人： Anthony Vacca , Thomas Vavul , Donald Parker , Zain Saidin , Sterling Watson , James Wiley
IPC分类号： G06K9/00
CPC分类号： G06K9/00 , G01N21/95607 , G03F1/84 , G06K2209/19
摘要： A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect. Optionally, the proximity of the defect to a pattern edge on the reticle or photomask can be determined using the physical extent and polarity of the defect. Then the printability of the defect can be determined from the transmissivity energy level of the defect and characteristics of the wafer fabrication process being used to produce the substrate from the reticle or photomask.
摘要翻译：一种用于在加工过程中确定掩模版或光掩模上的基板上的缺陷的可印刷性的方法和软件程序。这是通过创建具有显示缺陷的多个单独像素图像的像素网格图像来执行的。将灰度值分配给像素网格图像的每个像素图像，并且选择缺陷的可能的中心像素。然后确定缺陷的极性，使用可能的中心缺陷和缺陷的极性任选地选择缺陷的粗略中心像素。如果选择粗中心像素，则可以可选地从缺陷的粗中心像素和极性中选择缺陷的精细中心。从中心像素可以确定缺陷的物理范围，然后确定缺陷的物理范围的透射能级。可选地，可以使用缺陷的物理范围和极性来确定缺陷与掩模版或光掩模上的图案边缘的接近度。然后，可以从缺陷的透射能级和用于从掩模版或光掩模制造衬底的晶片制造工艺的特性确定缺陷的可印刷性。

6. 发明申请

US20050140970A1 System and method for determining reticle defect printability 审中-公开
标题翻译：用于确定掩模版缺陷可印刷性的系统和方法
公开(公告)号：US20050140970A1
公开(公告)日：2005-06-30
申请号：US11067179
申请日：2005-02-25
申请人： Anthony Vacca , Thomas Vavul , Donald Parker , Zain Saidin , Sterling Watson , James Wiley
发明人： Anthony Vacca , Thomas Vavul , Donald Parker , Zain Saidin , Sterling Watson , James Wiley
IPC分类号： G01N21/956 , G01N21/00
CPC分类号： G06K9/00 , G01N21/95607 , G03F1/84 , G06K2209/19
摘要： A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect. Optionally, the proximity of the defect to a pattern edge on the reticle or photomask can be determined using the physical extent and polarity of the defect. Then the printability of the defect can be determined from the transmissivity energy level of the defect and characteristics of the wafer fabrication process being used to produce the substrate from the reticle or photomask.
摘要翻译：一种用于在加工过程中确定掩模版或光掩模上的基板上的缺陷的可印刷性的方法和软件程序。这是通过创建具有显示缺陷的多个单独像素图像的像素网格图像来执行的。将灰度值分配给像素网格图像的每个像素图像，并且选择缺陷的可能的中心像素。然后确定缺陷的极性，使用可能的中心缺陷和缺陷的极性任选地选择缺陷的粗略中心像素。如果选择粗中心像素，则可以可选地从缺陷的粗中心像素和极性中选择缺陷的精细中心。从中心像素可以确定缺陷的物理范围，然后确定缺陷的物理范围的透射能级。可选地，可以使用缺陷的物理范围和极性来确定缺陷与掩模版或光掩模上的图案边缘的接近度。然后，可以从缺陷的透射能级和用于从掩模版或光掩模制造衬底的晶片制造工艺的特性确定缺陷的可印刷性。

7. 发明授权

US06731787B1 System and method for determining reticle defect printability 有权
公开(公告)号：US06731787B1
公开(公告)日：2004-05-04
申请号：US10137133
申请日：2002-04-30
申请人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
发明人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
IPC分类号： G06K900
CPC分类号： G01N21/95607
摘要： A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect. Optionally, the proximity of the defect to a pattern edge on the reticle or photomask can be determined using the physical extent and polarity of the defect. Then the printability of the defect can be determined from the transmissivity energy level of the defect and characteristics of the wafer fabrication process being used to produce the substrate from the reticle or photomask.

8. 发明授权

US6076465A System and method for determining reticle defect printability 失效
公开(公告)号：US6076465A
公开(公告)日：2000-06-20
申请号：US933971
申请日：1997-09-19
申请人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
发明人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
IPC分类号： G01N21/956 , B41F1/34
CPC分类号： G06K9/00 , G01N21/95607 , G03F1/84 , G06K2209/19
摘要： A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect. Optionally, the proximity of the defect to a pattern edge on the reticle or photomask can be determined using the physical extent and polarity of the defect. Then the printability of the defect can be determined from the transmissivity energy level of the defect and characteristics of the wafer fabrication process being used to produce the substrate from the reticle or photomask.

9. 发明授权

US5023528A Method of three-phase winding motor control of rotary motor-driven linear actuators, linear motor-actuated carriages, and similar systems, and apparatus for practicing the same 失效
标题翻译：旋转马达驱动线性执行器，线性马达驱动马达和类似系统的三相绕组电动机控制方法及其实践装置
公开(公告)号：US5023528A
公开(公告)日：1991-06-11
申请号：US263502
申请日：1988-10-27
申请人： Zain Saidin , Alexander H. Slocum
发明人： Zain Saidin , Alexander H. Slocum
IPC分类号： H02P6/00 , H02P6/06
CPC分类号： H02P6/06 , H02P6/34
摘要： A motor controller for a three-phase rotary electric motor driving a leadscrew or linear electric motor actuated carriage or similar device and in which the controller generates periodic waveforms on all three phases that match the back-emf of the motor to enable smooth moving of the carriage with compensation for nonlinearities in motor parameters and carriage stiffness and damping.
摘要翻译：用于三相旋转电动机的电动机控制器，其驱动丝杠或线性电动机致动托架或类似装置，并且其中控制器在与电动机的反电动势匹配的所有三相上产生周期性波形，以使得能够平稳地移动运动补偿马达参数非常性和滑架刚度和阻尼。

10. 发明申请

US20110051150A1 UNIQUE MARK AND METHOD TO DETERMINE CRITICAL DIMENSION UNIFORMITY AND REGISTRATION OF RETICLES COMBINED WITH WAFER OVERLAY CAPABILITY 有权
标题翻译：确定关键尺寸均匀性的独特标记和方法以及与覆盖层覆盖能力相结合的反应物的注册
公开(公告)号：US20110051150A1
公开(公告)日：2011-03-03
申请号：US12819281
申请日：2010-06-21
申请人： DongSub Choi , Amir Widmann , Zain Saidin , Frank Laske , John Robinson
发明人： DongSub Choi , Amir Widmann , Zain Saidin , Frank Laske , John Robinson
IPC分类号： G01B11/14
CPC分类号： G03F7/70683 , G03F7/70633 , H01L23/544 , H01L2223/5442 , H01L2924/0002 , H01L2924/00
摘要： A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.
摘要翻译：公开了组合的计量标记，系统和用于计算半导体电路上的对准的方法。组合的计量标记可以包括掩模对准结构和晶片重叠标记结构。

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