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1. 发明授权

US06381358B1 System and method for determining reticle defect printability 有权
公开(公告)号：US06381358B1
公开(公告)日：2002-04-30
申请号：US09559512
申请日：2000-04-27
申请人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
发明人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
IPC分类号： G06K900
CPC分类号： G06K9/00 , G01N21/95607 , G03F1/84 , G06K2209/19
摘要： A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect. Optionally, the proximity of the defect to a pattern edge on the reticle or photomask can be determined using the physical extent and polarity of the defect. Then the printability of the defect can be determined from the transmissivity energy level of the defect and characteristics of the wafer fabrication process being used to produce the substrate from the reticle or photomask.

2. 发明授权

US06731787B1 System and method for determining reticle defect printability 有权
公开(公告)号：US06731787B1
公开(公告)日：2004-05-04
申请号：US10137133
申请日：2002-04-30
申请人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
发明人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
IPC分类号： G06K900
CPC分类号： G01N21/95607
摘要： A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect. Optionally, the proximity of the defect to a pattern edge on the reticle or photomask can be determined using the physical extent and polarity of the defect. Then the printability of the defect can be determined from the transmissivity energy level of the defect and characteristics of the wafer fabrication process being used to produce the substrate from the reticle or photomask.

3. 发明授权

US6076465A System and method for determining reticle defect printability 失效
公开(公告)号：US6076465A
公开(公告)日：2000-06-20
申请号：US933971
申请日：1997-09-19
申请人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
发明人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
IPC分类号： G01N21/956 , B41F1/34
CPC分类号： G06K9/00 , G01N21/95607 , G03F1/84 , G06K2209/19
摘要： A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect. Optionally, the proximity of the defect to a pattern edge on the reticle or photomask can be determined using the physical extent and polarity of the defect. Then the printability of the defect can be determined from the transmissivity energy level of the defect and characteristics of the wafer fabrication process being used to produce the substrate from the reticle or photomask.

4. 发明申请

US20090324054A1 System and method for determing reticle defect printability 审中-公开
标题翻译：用于确定掩模版缺陷可印刷性的系统和方法
公开(公告)号：US20090324054A1
公开(公告)日：2009-12-31
申请号：US12456718
申请日：2009-06-22
申请人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
发明人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
IPC分类号： G06K9/00
CPC分类号： G06K9/00 , G01N21/95607 , G03F1/84 , G06K2209/19
摘要： A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect. Optionally, the proximity of the defect to a pattern edge on the reticle or photomask can be determined using the physical extent and polarity of the defect. Then the printability of the defect can be determined from the transmissivity energy level of the defect and characteristics of the wafer fabrication process being used to produce the substrate from the reticle or photomask.
摘要翻译：一种用于在加工过程中确定掩模版或光掩模上的基板上的缺陷的可印刷性的方法和软件程序。这是通过创建具有显示缺陷的多个单独像素图像的像素网格图像来执行的。将灰度值分配给像素网格图像的每个像素图像，并且选择缺陷的可能的中心像素。然后确定缺陷的极性，使用可能的中心缺陷和缺陷的极性任选地选择缺陷的粗略中心像素。如果选择粗中心像素，则可以可选地从缺陷的粗中心像素和极性中选择缺陷的精细中心。从中心像素可以确定缺陷的物理范围，然后确定缺陷的物理范围的透射能级。可选地，可以使用缺陷的物理范围和极性来确定缺陷与掩模版或光掩模上的图案边缘的接近度。然后，可以从缺陷的透射能级和用于从掩模版或光掩模制造衬底的晶片制造工艺的特性确定缺陷的可印刷性。

5. 发明申请

US20080133160A1 System and method for determining reticle defect printability 审中-公开
标题翻译：用于确定掩模版缺陷可印刷性的系统和方法
公开(公告)号：US20080133160A1
公开(公告)日：2008-06-05
申请号：US11980862
申请日：2007-10-31
申请人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
发明人： Anthony Vacca , Thomas Vavul , Donald J. Parker , Zain Saidin , Sterling G. Watson , James N. Wiley
IPC分类号： G06F19/00
CPC分类号： G06K9/00 , G01N21/95607 , G03F1/84 , G06K2209/19
摘要： A method and software program for determining printability of a defect on a reticle or photomask onto a substrate during processing. That is performed by creating a pixel grid image having a plurality of individual pixel images showing the defect. A gray scale value is assigned to each pixel image of the pixel grid image and a probable center pixel of the defect is selected. Then the polarity of the defect is determined, with a coarse center pixel of the defect optionally selected using the probable center defect and polarity of the defect. If a coarse center pixel is selected, then a fine center of the defect can optionally be selected from the coarse center pixel and polarity of the defect. From the center pixel the physical extent of the defect can be determined followed by the determination the transmissivity energy level of the physical extent of the defect. Optionally, the proximity of the defect to a pattern edge on the reticle or photomask can be determined using the physical extent and polarity of the defect. Then the printability of the defect can be determined from the transmissivity energy level of the defect and characteristics of the wafer fabrication process being used to produce the substrate from the reticle or photomask.
摘要翻译：一种用于在加工过程中确定掩模版或光掩模上的基板上的缺陷的可印刷性的方法和软件程序。这是通过创建具有显示缺陷的多个单独像素图像的像素网格图像来执行的。将灰度值分配给像素网格图像的每个像素图像，并且选择缺陷的可能的中心像素。然后确定缺陷的极性，使用可能的中心缺陷和缺陷的极性任选地选择缺陷的粗略中心像素。如果选择粗中心像素，则可以可选地从缺陷的粗中心像素和极性中选择缺陷的精细中心。从中心像素可以确定缺陷的物理范围，然后确定缺陷的物理范围的透射能级。可选地，可以使用缺陷的物理范围和极性来确定缺陷与掩模版或光掩模上的图案边缘的接近度。然后，可以从缺陷的透射能级和用于从掩模版或光掩模制造衬底的晶片制造工艺的特性确定缺陷的可印刷性。

6. 发明授权

US06930309B1 Dual-energy electron flooding for neutralization of charged substrate 有权
标题翻译：双能电子驱动用于中和带电衬底
公开(公告)号：US06930309B1
公开(公告)日：2005-08-16
申请号：US10809980
申请日：2004-03-26
申请人： Marian Mankos , Donald J. Parker
发明人： Marian Mankos , Donald J. Parker
IPC分类号： G01N23/225 , G01Q30/02 , H01J37/02 , H01J37/26
CPC分类号： H01J37/026 , G01N23/225 , H01J2237/0041 , H01J2237/2817
摘要： One embodiment disclosed relates to a method of electron beam inspection or review of a substrate having insulating materials therein. An area of the substrate is simultaneously exposed to a lower-energy electron beam and an overlapping higher-energy electron beam. The area is subsequently inspected with another electron beam. Another embodiment disclosed relates to an electron beam tool for examination of a substrate having insulating materials therein. A first cathode is configured as an electron source for a lower-energy electron beam, and a second cathode is configured as an electron source for a higher-energy electron beam. At least one electron lens is configured to focus the lower-energy electron beam and the higher-energy electron beam onto an overlapping area of a substrate. An electron beam column is subsequently used to examine the substrate.
摘要翻译：公开的一个实施例涉及一种电子束检查或回顾其中具有绝缘材料的基板的方法。基板的面积同时暴露于较低能量的电子束和重叠的高能电子束。随后用另一电子束检查该区域。所公开的另一实施例涉及用于检查其中具有绝缘材料的基板的电子束工具。第一阴极配置为低能电子束的电子源，第二阴极构成为高能电子束的电子源。至少一个电子透镜被配置为将低能电子束和较高能电子束聚焦到衬底的重叠区域上。随后使用电子束柱检查衬底。

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