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1. 发明申请

US20060258172A1 Methods for forming an enriched metal oxide surface 有权
公开(公告)号：US20060258172A1
公开(公告)日：2006-11-16
申请号：US11487080
申请日：2006-07-14
申请人： Stephen Russell , Max Hineman
发明人： Stephen Russell , Max Hineman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/31116 , H01L21/31683 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , Y10T428/1266 , Y10T428/12667 , H01L2924/00
摘要： Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided.

2. 发明申请

US20060046517A1 Methods for forming an enriched metal oxide surface for use in a semiconductor device 有权
标题翻译：用于形成用于半导体器件的富集金属氧化物表面的方法
公开(公告)号：US20060046517A1
公开(公告)日：2006-03-02
申请号：US10929173
申请日：2004-08-30
申请人： Stephen Russell , Max Hineman
发明人： Stephen Russell , Max Hineman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/31116 , H01L21/31683 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , Y10T428/1266 , Y10T428/12667 , H01L2924/00
摘要： Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state for use in a semiconductor device are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation sate for used in a semiconductor device is also provided.
摘要翻译：提供富含金属氧化物处于较高氧化态的金属氧化物表面用于半导体器件的方法。还提供了在其用于半导体器件的较高氧化态富集金属氧化物的金属氧化物表面。

3. 发明申请

US20070007657A1 Methods for forming conductive vias in a substrate and electronic devices and systems including an at least partially reversed oxidation injury at an interface between a conductive via and a conductive interconnect structure 审中-公开
标题翻译：在衬底中形成导电通孔的方法以及在导电通孔和导电互连结构之间的界面处包括至少部分反转的氧化损伤的电子器件和系统
公开(公告)号：US20070007657A1
公开(公告)日：2007-01-11
申请号：US11516096
申请日：2006-09-05
申请人： Max Hineman , Stephen Russell
发明人： Max Hineman , Stephen Russell
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76807 , H01L21/76814 , H01L21/76879
摘要： Methods for forming conductive vias in a substrate include oxidizing at least a portion of a metallic structure that is exposed through an opening in a substrate to form an oxidation injury in the metallic structure. The oxidation injury is at least partially reversed, and conductive material is provided within the opening in the substrate. Electronic devices and systems include at least one conductive via extending through a substrate and contacting at least one conductive interconnect structure along an interface. The conductive interconnect structure includes an at least partially reversed oxidation injury at the interface between the conductive via and the interconnect structure.
摘要翻译：在衬底中形成导电通孔的方法包括氧化至少一部分通过衬底中的开口暴露的金属结构，以在金属结构中形成氧化损伤。氧化损伤至少部分反转，导电材料设置在基板的开口内。电子设备和系统包括至少一个延伸穿过衬底并且沿着界面接触至少一个导电互连结构的导电通孔。导电互连结构包括在导电通孔和互连结构之间的界面处的至少部分反转的氧化损伤。

4. 发明申请

US20050170642A1 Methods for improving metal-to-metal contact in a via, devices made according to the methods, and systems including the same 有权
标题翻译：用于改善通孔中金属对金属接触的方法，根据方法制备的器件以及包括其的系统
公开(公告)号：US20050170642A1
公开(公告)日：2005-08-04
申请号：US10767764
申请日：2004-01-29
申请人： Max Hineman , Stephen Russell
发明人： Max Hineman , Stephen Russell
IPC分类号： H01L21/44 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/76807 , H01L21/76814 , H01L21/76879
摘要： In damascene process integration, a reducing plasma is applied after the etch stop or barrier layer is opened over a copper layer. Currently known methods for opening barrier layers suffer from the disadvantage that they cause at least some of the underlying copper to oxidize to copper oxide.. Because copper oxide is selectively removed by subsequent wet cleaning, voids can form where damaged copper (e.g., copper oxide) is removed, thus compromising the reliability of metal-to-metal contact in vias. The present invention advantageously overcomes this and other disadvantages of the prior art through the use of a hydrogen plasma following the barrier layer opening step, which repairs damaged copper (e.g., reduces copper oxide to copper), thus preventing and/or diminishing defects in metal-to-metal contacts in vias and concomitantly improving the reliability of the same.
摘要翻译：在镶嵌工艺集成中，在蚀刻停止或阻挡层在铜层上打开之后施加还原等离子体。目前已知的用于打开阻挡层的方法的缺点在于它们使至少一些下面的铜氧化成氧化铜。由于通过随后的湿法清洁选择性地除去氧化铜，所以在损坏的铜（例如，氧化铜），因此损害了通孔中金属对金属接触的可靠性。本发明有利地通过在阻挡层开口步骤之后使用氢等离子体来克服现有技术的这个和其他缺点，其修复损坏的铜（例如，将铜氧化物还原为铜），从而防止和/或减少金属中的缺陷金属触点，同时提高了其可靠性。

5. 发明授权

US08012674B2 Efficient pitch multiplication process 有权
标题翻译：高效的音调乘法过程
公开(公告)号：US08012674B2
公开(公告)日：2011-09-06
申请号：US12687005
申请日：2010-01-13
申请人： Mark Fischer , Stephen Russell , H. Montgomery Manning
发明人： Mark Fischer , Stephen Russell , H. Montgomery Manning
IPC分类号： G03F7/26
CPC分类号： H01L29/06 , H01L21/0338 , H01L21/3088
摘要： Pitch multiplied and non-pitch multiplied features of an integrated circuit, e.g., features in the array, interface and periphery areas of the integrated circuit, are formed by processing a substrate through a mask. The mask is formed by patterning a photoresist layer which simultaneously defines mask elements corresponding to features in the array, interface and periphery areas of the integrated circuit. The pattern is transferred to an amorphous carbon layer. Sidewall spacers are formed on the sidewalls of the patterned amorphous carbon layer. A layer of protective material is deposited and then patterned to expose mask elements in the array region and in selected parts of the interface or periphery areas. Amorphous carbon in the array region or other exposed parts is removed, thereby leaving a pattern including free-standing, pitch multiplied spacers in the array region. The protective material is removed, leaving a pattern of pitch multiplied spacers in the array region and non-pitch multiplied mask elements in the interface and periphery areas. The pattern is transferred to a hard mask layer, through which an underlying substrate is etched.
摘要翻译：通过通过掩模处理衬底来形成集成电路的间距倍增和非间距倍数特征，例如集成电路的阵列，接口和外围区域中的特征。通过图案化光刻胶层来形成掩模，该光致抗蚀剂层同时限定对应于集成电路的阵列，界面和外围区域中的特征的掩模元件。将图案转移到无定形碳层。侧壁间隔物形成在图案化无定形碳层的侧壁上。沉积一层保护材料，然后将其图案化以暴露阵列区域中的掩模元件和界面或外围区域的选定部分。除去阵列区域或其它暴露部分中的无定形碳，从而在阵列区域中留下包括独立的，间距倍增的间隔物的图案。去除保护材料，在阵列区域中留下间距倍数间隔物的图案，并在界面和外围区域留下非间距倍增的掩模元件。将图案转移到硬掩模层，通过该硬掩模层蚀刻下面的基底。

6. 发明申请

US20110114555A1 FILTRATION MEDIA 审中-公开
标题翻译：过滤介质
公开(公告)号：US20110114555A1
公开(公告)日：2011-05-19
申请号：US12995704
申请日：2009-06-01
申请人： Stephen Coulson , Stephen Russell , Matthew Tipper
发明人： Stephen Coulson , Stephen Russell , Matthew Tipper
IPC分类号： B01D39/16 , C08J7/18
CPC分类号： B01D39/1623 , B01D39/2055 , B01D2239/0478
摘要： A fibrous filtration media such as an electrostatic filtration media, whose fibre surfaces have been modified by exposure to a plasma deposition process so as to deposit a polymeric coating thereon.
摘要翻译：一种纤维过滤介质，例如静电过滤介质，其纤维表面已通过暴露于等离子体沉积工艺进行改性，以便在其上沉积聚合物涂层。

7. 发明申请

US20100220906A1 METHODS AND SYSTEMS FOR DETERMINING OPTIMAL FEATURES FOR CLASSIFYING PATTERNS OR OBJECTS IN IMAGES 有权
标题翻译：用于确定图像中分类图案或对象的最佳特征的方法和系统
公开(公告)号：US20100220906A1
公开(公告)日：2010-09-02
申请号：US12601784
申请日：2008-05-29
申请人： Michael Abramoff , Pete Soliz , Stephen Russell
发明人： Michael Abramoff , Pete Soliz , Stephen Russell
IPC分类号： G06K9/46 , G06K9/00
CPC分类号： G06K9/66 , G06K9/6231 , G06K9/6277 , G06T7/0014
摘要： Provided are methods for determining optimal features for classifying patterns or objects. Also provided are methods for image analysis. Further provided are methods for image searching.
摘要翻译：提供了用于确定用于对图案或对象进行分类的最佳特征的方法。还提供了图像分析的方法。进一步提供图像搜索的方法。

8. 发明授权

US07666578B2 Efficient pitch multiplication process 有权
标题翻译：高效的音调乘法过程
公开(公告)号：US07666578B2
公开(公告)日：2010-02-23
申请号：US11521851
申请日：2006-09-14
申请人： Mark Fischer , Stephen Russell , H. Montgomery Manning
发明人： Mark Fischer , Stephen Russell , H. Montgomery Manning
IPC分类号： G03F7/26 , G03F7/00
CPC分类号： H01L29/06 , H01L21/0338 , H01L21/3088
摘要： Pitch multiplied and non-pitch multiplied features of an integrated circuit, e.g., features in the array, interface and periphery areas of the integrated circuit, are formed by processing a substrate through a mask. The mask is formed by patterning a photoresist layer which simultaneously defines mask elements corresponding to features in the array, interface and periphery areas of the integrated circuit. The pattern is transferred to an amorphous carbon layer. Sidewall spacers are formed on the sidewalls of the patterned amorphous carbon layer. A layer of protective material is deposited and then patterned to expose mask elements in the array region and in selected parts of the interface or periphery areas. Amorphous carbon in the array region or other exposed parts is removed, thereby leaving a pattern including free-standing, pitch multiplied spacers in the array region. The protective material is removed, leaving a pattern of pitch multiplied spacers in the array region and non-pitch multiplied mask elements in the interface and periphery areas. The pattern is transferred to a hard mask layer, through which an underlying substrate is etched.
摘要翻译：通过通过掩模处理衬底来形成集成电路的间距倍增和非间距倍数特征，例如集成电路的阵列，接口和外围区域中的特征。通过图案化光刻胶层来形成掩模，该光致抗蚀剂层同时限定对应于集成电路的阵列，界面和外围区域中的特征的掩模元件。将图案转移到无定形碳层。侧壁间隔物形成在图案化无定形碳层的侧壁上。沉积一层保护材料，然后将其图案化以暴露阵列区域中的掩模元件和界面或外围区域的选定部分。除去阵列区域或其它暴露部分中的无定形碳，从而在阵列区域中留下包括独立的，间距倍增的间隔物的图案。去除保护材料，在阵列区域中留下间距倍数间隔物的图案，并在界面和外围区域留下非间距倍增的掩模元件。将图案转移到硬掩模层，通过该硬掩模层蚀刻下面的基底。

9. 发明申请

US20070227465A1 Reprogrammable receiver collar 有权
标题翻译：可编程接收器轴环
公开(公告)号：US20070227465A1
公开(公告)日：2007-10-04
申请号：US11397164
申请日：2006-04-04
申请人： Duane Gerig , Stephen Russell , Paul McAfee
发明人： Duane Gerig , Stephen Russell , Paul McAfee
IPC分类号： A62B35/00
CPC分类号： A01K15/021
摘要： An animal training system including a programming apparatus and an animal training collar. The animal training collar is communicatively couplable to the programming apparatus. The animal training collar includes at least one stimulation probe and a programmable device operatively connected to the at least one stimulation probe to activate the at least one stimulation probe. The at least one stimulation probe also transferring data at least one of to and from the programming apparatus.
摘要翻译：一种动物训练系统，包括编程设备和动物训练项圈。动物训练项圈可与编程设备进行通讯连接。动物训练衣领包括至少一个刺激探针和可操作地连接到所述至少一个刺激探针以激活所述至少一个刺激探针的可编程装置。所述至少一个刺激探头还将数据传送到编程设备和从编程设备传送数据。

10. 发明授权

US06641205B1 Vehicle door sealing assembly 失效
标题翻译：车门密封总成
公开(公告)号：US06641205B1
公开(公告)日：2003-11-04
申请号：US10278681
申请日：2002-10-23
申请人： Stephen Russell , John Collins , Kazuo Onodera , Tony Kmeid
发明人： Stephen Russell , John Collins , Kazuo Onodera , Tony Kmeid
IPC分类号： B60J504
CPC分类号： B60J5/0479 , B60J10/80
摘要： An assembly for sealing a front door and a rear door in a door opening on a vehicle lacking a conventional, separate B-pillar. The front door carries an adaptor at a lower rear end thereof that defines a generally sharp corner over which a portion of the front door seal extends. The rear door defines a sealing surface that is engaged by the portion of the front door seal extending over the adaptor. The rear door includes a rear door seal, a portion of which extends over an outer surface of the rear door and is engaged a sealing surface provided by the front door. At least a portion of the rear door seal and sealing surface are integrally formed by a sealing boot disposed over a lower end of the rear door so as to create a seal-to-seal type engagement between the front and rear doors.
摘要翻译：一种用于密封前车门和后车门的组件，该组件用于没有传统的分开的B柱的车辆上的门开口中。前门在其后端承载适配器，该适配器限定了前门密封件的一部分延伸穿过的大致尖角。后门限定了一个密封表面，该密封表面由延伸在适配器上的前门密封件的部分接合。后门包括后门密封件，其一部分在后门的外表面上延伸并与由前门提供的密封表面接合。后门密封和密封表面的至少一部分由设置在后门的下端上的密封靴一体地形成，以便在前门和后门之间形成密封 - 密封型接合。

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