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1. 发明授权

US08294025B2 Lateral collection photovoltaics 有权
标题翻译：横向收集光伏
公开(公告)号：US08294025B2
公开(公告)日：2012-10-23
申请号：US11972491
申请日：2008-01-10
申请人： Stephen J. Fonash , Handong Li , David Stone
发明人： Stephen J. Fonash , Handong Li , David Stone
IPC分类号： H01L31/02224
CPC分类号： H01L31/035281 , B82Y20/00 , H01L31/022425 , H01L31/022433 , H01L31/03529 , H01L31/18 , H01L51/445 , H01L51/447 , Y02E10/549 , Y10T428/24174
摘要： Lateral collection photovoltaic (LCP) structures based on micro- and nano-collecting elements are used to collect photogenerated carriers. In one set of embodiments, the collecting elements are arrayed on a conducting substrate. In certain versions, the collecting elements are substantially perpendicular to the conductor. In another set of embodiments, the micro- or nano-scale collecting elements do not have direct physical and electrical contact to any conducting substrate. In one version, both anode and cathode electrodes are laterally arrayed. In another version, the collecting elements of one electrode are a composite wherein a conductor is separated by an insulator, which is part of each collector element, from the opposing electrode residing on the substrate. In still another version, the collection of one electrode structure is a composite containing both the anode and the cathode collecting elements for collection. An active material is positioned among the collector elements.
摘要翻译：使用基于微纳米收集元件的侧向收集光伏（LCP）结构来收集光生载流子。在一组实施例中，集合元件排列在导电衬底上。在某些形式中，收集元件基本上垂直于导体。在另一组实施例中，微尺度或纳米级收集元件不具有与任何导电衬底的直接物理和电接触。在一个版本中，阳极和阴极电极都是横向排列的。在另一个版本中，一个电极的收集元件是复合材料，其中导体由驻留在基底上的相对电极的绝缘体分隔开，绝缘体是每个集电器元件的一部分。在另一个版本中，一个电极结构的集合是包含阳极和阴极收集元件用于收集的复合物。活性物质位于收集器元件之间。

2. 发明授权

US09634163B2 Lateral collection photovoltaics 有权
公开(公告)号：US09634163B2
公开(公告)日：2017-04-25
申请号：US13657035
申请日：2012-10-22
申请人： Stephen J. Fonash , Handong Li , David Stone
发明人： Stephen J. Fonash , Handong Li , David Stone
IPC分类号： H01L31/0352 , H01L31/18 , B82Y20/00 , H01L31/0224 , H01L51/44
CPC分类号： H01L31/035281 , B82Y20/00 , H01L31/022425 , H01L31/022433 , H01L31/03529 , H01L31/18 , H01L51/445 , H01L51/447 , Y02E10/549 , Y10T428/24174
摘要： A nanostructured or microstructured array of elements on a conductor layer together form a device electrode of a photovoltaic or detector structure. The array on the conductor layer has a high surface area to volume ratio configuration defining a void matrix between elements. An active layer or active layer precursors is disposed into the void matrix as a liquid to form a thickness coverage giving an interface on which a counter-electrode is positioned parallel to the conduction layer or as a vapor to form a conformal thickness coverage of the array and conduction layer. The thickness coverage is controlled to enhance collection of at least one of electrons and holes arising from photogeneration, or excitons arising from photogeneration, to the device electrode or a device counter-electrode as well as light absorption in said active layer via reflection and light trapping of said device electrode.

3. 发明申请

US20080176030A1 LATERAL COLLECTION PHOTOVOLTAICS 有权
标题翻译：横向收藏光伏
公开(公告)号：US20080176030A1
公开(公告)日：2008-07-24
申请号：US11972491
申请日：2008-01-10
申请人： Stephen J. Fonash , Handong Li , David Stone
发明人： Stephen J. Fonash , Handong Li , David Stone
IPC分类号： B32B7/00
CPC分类号： H01L31/035281 , B82Y20/00 , H01L31/022425 , H01L31/022433 , H01L31/03529 , H01L31/18 , H01L51/445 , H01L51/447 , Y02E10/549 , Y10T428/24174
摘要： Lateral collection photovoltaic (LCP) structures based on micro- and nano-collecting elements are used to collect photogenerated carriers. In one set of embodiments, the collecting elements are arrayed on a conducting substrate. In certain versions, the collecting elements are substantially perpendicular to the conductor. In another set of embodiments, the micro- or nano-scale collecting elements do not have direct physical and electrical contact to any conducting substrate. In one version, both anode and cathode electrodes are laterally arrayed. In another version, the collecting elements of one electrode are a composite wherein a conductor is separated by an insulator, which is part of each collector element, from the opposing electrode residing on the substrate. In still another version, the collection of one electrode structure is a composite containing both the anode and the cathode collecting elements for collection. An active material is positioned among the collector elements.
摘要翻译：使用基于微纳米收集元件的侧向收集光伏（LCP）结构来收集光生载流子。在一组实施例中，集合元件排列在导电衬底上。在某些形式中，收集元件基本上垂直于导体。在另一组实施例中，微尺度或纳米级收集元件不具有与任何导电衬底的直接物理和电接触。在一个版本中，阳极和阴极电极都是横向排列的。在另一个版本中，一个电极的收集元件是复合材料，其中导体由驻留在基底上的相对电极的绝缘体分隔开，绝缘体是每个集电器元件的一部分。在另一个版本中，一个电极结构的集合是包含阳极和阴极收集元件用于收集的复合物。活性物质位于收集器元件之间。

4. 发明授权

US07309620B2 Use of sacrificial layers in the manufacture of high performance systems on tailored substrates 失效
标题翻译：在定制底材上制造高性能系统时使用牺牲层
公开(公告)号：US07309620B2
公开(公告)日：2007-12-18
申请号：US10340723
申请日：2003-01-13
申请人： Stephen J. Fonash , Handong Li , Youngchul Lee , Joseph D. Cuiffi , Daniel J. Hayes
发明人： Stephen J. Fonash , Handong Li , Youngchul Lee , Joseph D. Cuiffi , Daniel J. Hayes
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , B81C99/008 , G02B6/132 , G02B6/136 , G02B2006/12169 , G02B2006/12176 , H01L21/2007 , H01L21/568 , H01L21/6835 , H01L21/76251 , H01L24/97 , H01L27/1214 , H01L2221/68318 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01057 , H01L2924/09701 , H01L2924/12042 , H01L2924/19042 , H01L2924/3025 , H01M8/1097 , Y02P70/56 , Y10S438/96 , Y10S438/977 , H01L2924/00
摘要： The invention relates to methods for preparing a removable system on a mother substrate. The method deposits a high surface to volume sacrificial layer on a mother substrate and stabilizes the sacrificial layer by a) removing volatile chemical species in and on the sacrificial layer and/or b) modifying the surface of the layer. The method coats over the sacrificial layer with a capping medium. A system is the fabricated on the capping medium. The method provides through holes to access the sacrificial layer. The method may also apply a top layer onto the system to form a covered system. The invention also includes the step of removing the sacrificial layer to release the system from the mother substrate. Methods of the invention also include selectively removing a portion of the system and capping layers to form void regions defining an array of islands composed of device, structure, or system and capping layer regions, and optionally filling the island-defining void region with a sacrificial material. In such methods the sacrificial material and the high surface to volume sacrificial layer are removed to release the system from the mother substrate. Methods of the invention also include applying a layer to the capping material side of the released system to form a configuration wherein the system is substantially within a bending-stress reduced neutral plane. The systems fabricated according to the invention may be placed on a wide variety of suitable substrates, including flexible substrates.
摘要翻译：本发明涉及在母基板上制备可移除系统的方法。该方法在母体衬底上沉积高表面到体积的牺牲层，并通过以下步骤使牺牲层稳定：a）去除牺牲层中和/或牺牲层上的挥发性化学物质和/或b）改变该层的表面。该方法用覆盖介质涂覆在牺牲层上。系统是在封盖介质上制造的。该方法提供通孔以进入牺牲层。该方法还可以将顶层应用到系统上以形成被覆盖的系统。本发明还包括去除牺牲层以从母体衬底释放系统的步骤。本发明的方法还包括选择性地去除系统的一部分和封盖层，以形成限定由器件，结构或系统和覆盖层区域组成的岛阵列的空隙区域，并且可选地用牺牲层填充岛状限定空隙区域材料。在这种方法中，去除了牺牲材料和高表面到体积的牺牲层，以从母体衬底释放系统。本发明的方法还包括向释放系统的封盖材料侧施加一层以形成其中系统基本上在弯曲应力减小的中性平面内的构造。根据本发明制造的系统可以放置在各种合适的基板上，包括柔性基板。

5. 发明申请

US20130099342A1 LATERAL COLLECTION PHOTOVOLTAICS 有权
标题翻译：横向收藏光伏
公开(公告)号：US20130099342A1
公开(公告)日：2013-04-25
申请号：US13657035
申请日：2012-10-22
申请人： Stephen J. Fonash , Li Handong , David Stone
发明人： Stephen J. Fonash , Li Handong , David Stone
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035281 , B82Y20/00 , H01L31/022425 , H01L31/022433 , H01L31/03529 , H01L31/18 , H01L51/445 , H01L51/447 , Y02E10/549 , Y10T428/24174
摘要： A nanostructured or microstructured array of elements on a conductor layer together form a device electrode of a photovoltaic or detector structure. The array on the conductor layer has a high surface area to volume ratio configuration defining a void matrix between elements. An active layer or active layer precursors is disposed into the void matrix as a liquid to form a thickness coverage giving an interface on which a counter-electrode is positioned parallel to the conduction layer or as a vapor to form a conformal thickness coverage of the array and conduction layer. The thickness coverage is controlled to enhance collection of at least one of electrons and holes arising from photogeneration, or excitons arising from photogeneration, to the device electrode or a device counter-electrode as well as light absorption in said active layer via reflection and light trapping of said device electrode.
摘要翻译：导体层上的纳米结构或微结构化元件阵列一起形成光伏或检测器结构的器件电极。导体层上的阵列具有限定元件之间的空隙矩阵的高表面积与体积比构型。将活性层或活性层前体作为液体设置到空隙基质中以形成厚度覆盖层，从而形成平面于导电层或蒸气的反电极的界面，以形成阵列的共形厚度覆盖和导电层。控制厚度覆盖以增强从光生产引起的电子和空穴或由光生成产生的激子中的至少一个的收集到器件电极或器件对电极以及通过反射和光捕获在所述有源层中的光吸收的所述器件电极。

6. 发明授权

US08569834B2 Accumulation field effect microelectronic device and process for the formation thereof 有权
公开(公告)号：US08569834B2
公开(公告)日：2013-10-29
申请号：US12102398
申请日：2008-04-14
申请人： Stephen J. Fonash , Yinghui Shan , Somasundaram Ashok
发明人： Stephen J. Fonash , Yinghui Shan , Somasundaram Ashok
IPC分类号： H01L29/786
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/78603 , H01L29/78618 , H01L29/78672 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L29/78696
摘要： A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in contact with the channel portion and overlaid in turn by a gate. A gate contact applies a gate voltage bias to control charge carrier accumulation and depletion in the underlying channel portion. This channel portion has a dimension normal to the gate which is fully depleted in the off-state. The dopant type is the same across the source, drain and the channel portion of the device. The device on-state current is determined by the doping and, unlike a MOSFET, is not directly proportional to device capacitance.

7. 发明申请

US20130192663A1 SINGLE AND MULTI-JUNCTION LIGHT AND CARRIER COLLECTION MANAGEMENT CELLS 审中-公开
标题翻译：单和多功能光和载体收集管理细胞
公开(公告)号：US20130192663A1
公开(公告)日：2013-08-01
申请号：US13823929
申请日：2011-09-15
申请人： Stephen J. Fonash , Wook Jun Nam
发明人： Stephen J. Fonash , Wook Jun Nam
IPC分类号： H01L31/052
CPC分类号： H01L31/03923 , H01L31/02363 , H01L31/035218 , H01L31/03529 , H01L31/0392 , H01L31/03921 , H01L31/03925 , H01L31/056 , H01L31/075 , H01L31/076 , H01L31/1804 , H01L31/202 , Y02E10/52 , Y02E10/541 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A material design is provided for a light and carrier collection (LCCM) architecture in single junction and multi-junction photovoltaic and light sensor devices. The LCCM architecture improves performance and, when applied to single or multi-junctions, can lead to solar cells on flexible plastic substrates which can be easily deployed and even draped over various shapes and forms. The device has an array of conducting nano-elements in electrical and physical contact with the planar electrode. A spacer of 0 to 100 nm in thickness may be used to contact the array of conducting nano-elements. One or more volume regions comprised of at least one light absorbing material is present with the first in simultaneous contact with said spacer to form an operating photovoltaic single- or multi-junction device with periodic undulations to enhance trapping of the impinging light and photocarrier collection throughout the absorber volume regions.
摘要翻译：为单结和多结光伏和光传感器设备中的轻载波收集（LCCM）架构提供了材料设计。 LCCM架构提高了性能，并且当应用于单结或多结时，可以在柔性塑料基板上导致太阳能电池，这些太阳能电池可以容易地部署，甚至可以覆盖各种形状和形式。该器件具有与平面电极电接触和物理接触的导电纳米元件的阵列。可以使用厚度为0至100nm的间隔物来接触导电纳米元件阵列。存在由至少一种光吸收材料组成的一个或多个体积区域，其首先与所述间隔物同时接触以形成具有周期性起伏的操作光伏单结或多接头装置，以增强对入射光和光载流子收集的捕获吸收体积区域。

8. 发明授权

US06531193B2 Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications 有权
标题翻译：使用四甲基硅烷（TMS）沉积的低温，高品质二氧化硅薄膜用于应力控制和覆盖应用
公开(公告)号：US06531193B2
公开(公告)日：2003-03-11
申请号：US09734232
申请日：2000-12-11
申请人： Stephen J. Fonash , Xin Lin , Douglas M. Reber
发明人： Stephen J. Fonash , Xin Lin , Douglas M. Reber
IPC分类号： C23C1640
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/5096 , H01L21/02211 , H01L21/02274 , H01L21/02337 , H01L21/31612
摘要： Silicon dioxide thin film have been deposited at temperatures from 25° C. to 250° C. by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. At these temperatures, the PETMS oxide films have been found to exhibit adjustable stress and adjustable conformality. Post deposition annealing in forming gas at or below the deposition temperatures has been shown to be very effective in improving the PETMS oxide properties while preserving the low temperature aspect of the PETMS oxides.
摘要翻译：通过使用四甲基硅烷（TMS）作为含硅前体的等离子体增强化学气相沉积（PECVD），在25℃至250℃的温度下沉积二氧化硅薄膜。在这些温度下，已经发现PETMS氧化物膜具有可调节的应力和可调整的共形性。已经表明，在沉积温度或低于沉积温度的成形气体中的后沉积退火在改善PETMS氧化物性能同时保持PETMS氧化物的低温方面是非常有效的。

9. 发明授权

US6159559A Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) 失效
标题翻译：使用四甲基硅烷（TMS）沉积的低温，高品质二氧化硅薄膜
公开(公告)号：US6159559A
公开(公告)日：2000-12-12
申请号：US110923
申请日：1998-07-06
申请人： Douglas M. Reber , Stephen J. Fonash
发明人： Douglas M. Reber , Stephen J. Fonash
IPC分类号： C23C16/40 , C23C16/509 , H01L21/316
CPC分类号： H01L21/02126 , C23C16/402 , C23C16/5096 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/31612
摘要： Silicon dioxide thin films have been deposited at temperatures from 40.degree. C. to 250.degree. C. by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. The properties of the PECVD TMS oxides (PETMS-Oxs) were analyzed with Fourier TransformInfrared (FTIR) transmissionspectroscopy, BOEand P-etch rates and both current-voltage (I-V) and capacitance-voltage (C-V) electrical characterization. It was found that the deposition rate for films produced from TMS increased with decreasing temperature; that the --OH inclusions could be affected by TMS flow rate; and that He dilution rate affected trapping for films produced over the temperature range explored. At both 130.degree. C. and 250.degree. C., deposition conditions were identified which formed high quality as-deposited oxide films. Under the best conditions, unannealed Al/PETMS-Ox/c-Si capacitor structures displayed flat band voltages of V.sub.fb -2.9 V and breakdown fields (V.sub.bd) in excess of 8 MV/cm. These PETMS-Ox films also show low leakage current densities
摘要翻译：通过使用四甲基硅烷（TMS）作为含硅前体的等离子体增强化学气相沉积（PECVD），在40℃至250℃的温度下沉积二氧化硅薄膜。使用傅里叶变换红外（FTIR）透射光谱，BOE和P蚀刻速率以及电流 - 电压（I-V）和电容电压（C-V）电特征来分析PECVD TMS氧化物（PETMS-Oxs）的性质。发现由TMS产生的薄膜的沉积速率随着温度的降低而增加; -OH夹杂物可能受TMS流速的影响; 并且他的稀释率影响了在所探索的温度范围内产生的膜的捕获。在130℃和250℃下，确定沉积条件，形成高质量的沉积氧化膜。在最佳条件下，未退火的Al / PETMS-Ox / c-Si电容器结构显示Vfb -2.9V的平坦带电压和超过8MV / cm的击穿场（Vbd）。这些PETMS-Ox膜也显示出低于10-9A / cm 2的低泄漏电流密度，其可以保持在超过4.5MV / cm的场。 PETMS氧化物电气质量和工艺简单性相结合，为低温，大面积应用提供了有吸引力的氧化物沉积技术。

10. 发明申请

US20210305447A1 NANO-SCALE LIGHT INTENSITY CONCENTRATION CONTROL 有权
公开(公告)号：US20210305447A1
公开(公告)日：2021-09-30
申请号：US17182810
申请日：2021-02-23
申请人： Stephen J. Fonash
发明人： Stephen J. Fonash
IPC分类号： H01L31/054 , H01L31/0232
摘要： A photovoltaic or light detecting device is provided that includes a periodic array of dome or dome-like protrusions at the light impingement surface and three forms of reflector/back electrode at the device back. The beneficial interaction between an appropriately designed top protrusion array and these reflector/electrode back contacts (R/EBCs) serve (1) to refract the incoming light thereby providing photons with an advantageous larger momentum component parallel to the plane of the back (R/EBC) contact and (2) to provide optical impedance matching for the short wavelength incoming light. The reflector/back electrode operates as a back light reflector and counter electrode to the periodic array of dome or dome-like structures. A substrate supports the reflector/back electrode.

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