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    • 3. 发明授权
    • Systems and methods related to the formation of carbon-based nanostructures
    • 与碳基纳米结构形成相关的系统和方法
    • US08865109B2
    • 2014-10-21
    • US13568398
    • 2012-08-07
    • Stephen A. Steiner, IIIBrian L. Wardle
    • Stephen A. Steiner, IIIBrian L. Wardle
    • D01C5/00C01B31/02B82Y30/00C01B31/04B82Y40/00
    • C01B32/16B82Y30/00B82Y40/00C01B32/162C01B32/18C01B32/186C01B2202/02C01B2202/06Y10S977/742Y10S977/842Y10S977/843
    • Systems and methods for the formation of carbon-based nanostructures are generally described. In some embodiments, the nanostructures may be formed on a nanopositor. The nanopositor can comprise, in some embodiments, at least one of metal atoms in a non-zero oxidation state and metalloid atoms in a non-zero oxidation state. For example, the nanopositor may comprise a metal oxide, a metalloid oxide, a metal chalcogenide, a metalloid chalcogenide, and the like. The carbon-based nanostructures may be grown by exposing the nanopositor, in the presence or absence of a growth substrate, to a set of conditions selected to cause formation of carbon-based nanostructures on the nanopositor. In some embodiments, metal or metalloid atoms in a non-zero oxidation state are not reduced to a zero oxidation state during the formation of the carbon-based nanostructures. In some cases, metal or metalloid atoms in a non-zero oxidation state do not form a carbide during the formation of the carbon-based nanostructures.
    • 通常描述用于形成碳基纳米结构的系统和方法。 在一些实施方案中,纳米结构可以形成在纳米激光器上。 在一些实施方案中,纳米导体可以包括非零氧化态的金属原子和非零氧化态的准金属原子中的至少一种。 例如,纳米阳极剂可以包含金属氧化物,类金属氧化物,金属硫族化物,准金属硫族化物等。 碳纳米结构可以通过在存在或不存在生长衬底的情况下将纳米孔体暴露于所选择的一系列条件来生长,所述条件被选择用于在纳米反应器上形成碳基纳米结构。 在一些实施方案中,非零氧化态的金属或准金属原子在形成碳基纳米结构期间不会降低至零氧化态。 在一些情况下,非零氧化态的金属或准金属原子在形成碳基纳米结构期间不形成碳化物。
    • 4. 发明申请
    • SYSTEMS AND METHODS RELATED TO THE FORMATION OF CARBON-BASED NANOSTRUCTURES
    • 与碳基纳米结构形成相关的系统和方法
    • US20110027162A1
    • 2011-02-03
    • US12847905
    • 2010-07-30
    • Stephen A. Steiner, IIIBrian L. Wardle
    • Stephen A. Steiner, IIIBrian L. Wardle
    • C01B31/30
    • C01B32/16B82Y30/00B82Y40/00C01B32/162C01B32/18C01B32/186C01B2202/02C01B2202/06Y10S977/742Y10S977/842Y10S977/843
    • Systems and methods for the formation of carbon-based nanostructures are generally described. In some embodiments, the nanostructures may be formed on a nanopositor. The nanopositor can comprise, in some embodiments, at least one of metal atoms in a non-zero oxidation state and metalloid atoms in a non-zero oxidation state. For example, the nanopositor may comprise a metal oxide, a metalloid oxide, a metal chalcogenide, a metalloid chalcogenide, and the like. The carbon-based nanostructures may be grown by exposing the nanopositor, in the presence or absence of a growth substrate, to a set of conditions selected to cause formation of carbon-based nanostructures on the nanopositor. In some embodiments, metal or metalloid atoms in a non-zero oxidation state are not reduced to a zero oxidation state during the formation of the carbon-based nanostructures. In some cases, metal or metalloid atoms in a non-zero oxidation state do not form a carbide during the formation of the carbon-based nanostructures.
    • 通常描述用于形成碳基纳米结构的系统和方法。 在一些实施方案中,纳米结构可以形成在纳米激光器上。 在一些实施方案中,纳米导体可以包括非零氧化态的金属原子和非零氧化态的准金属原子中的至少一种。 例如,纳米阳极剂可以包含金属氧化物,类金属氧化物,金属硫族化物,准金属硫族化物等。 碳纳米结构可以通过在存在或不存在生长衬底的情况下将纳米孔体暴露于所选择的一系列条件来生长,所述条件被选择用于在纳米反应器上形成碳基纳米结构。 在一些实施方案中,非零氧化态的金属或准金属原子在形成碳基纳米结构期间不会降低至零氧化态。 在一些情况下,非零氧化态的金属或准金属原子在形成碳基纳米结构期间不形成碳化物。
    • 5. 发明授权
    • Systems and methods related to the formation of carbon-based nanostructures
    • 与碳基纳米结构形成相关的系统和方法
    • US08257678B2
    • 2012-09-04
    • US12847905
    • 2010-07-30
    • Stephen A. Steiner, IIIBrian L. Wardle
    • Stephen A. Steiner, IIIBrian L. Wardle
    • D01C5/00
    • C01B32/16B82Y30/00B82Y40/00C01B32/162C01B32/18C01B32/186C01B2202/02C01B2202/06Y10S977/742Y10S977/842Y10S977/843
    • Systems and methods for the formation of carbon-based nanostructures are generally described. In some embodiments, the nanostructures may be formed on a nanopositor. The nanopositor can comprise, in some embodiments, at least one of metal atoms in a non-zero oxidation state and metalloid atoms in a non-zero oxidation state. For example, the nanopositor may comprise a metal oxide, a metalloid oxide, a metal chalcogenide, a metalloid chalcogenide, and the like. The carbon-based nanostructures may be grown by exposing the nanopositor, in the presence or absence of a growth substrate, to a set of conditions selected to cause formation of carbon-based nanostructures on the nanopositor. In some embodiments, metal or metalloid atoms in a non-zero oxidation state are not reduced to a zero oxidation state during the formation of the carbon-based nanostructures. In some cases, metal or metalloid atoms in a non-zero oxidation state do not form a carbide during the formation of the carbon-based nanostructures.
    • 通常描述用于形成碳基纳米结构的系统和方法。 在一些实施方案中,纳米结构可以形成在纳米激光器上。 在一些实施方案中,纳米导体可以包括非零氧化态的金属原子和非零氧化态的准金属原子中的至少一种。 例如,纳米阳极剂可以包含金属氧化物,类金属氧化物,金属硫族化物,准金属硫族化物等。 碳纳米结构可以通过在存在或不存在生长衬底的情况下将纳米孔体暴露于所选择的一系列条件来生长,所述条件被选择用于在纳米反应器上形成碳基纳米结构。 在一些实施方案中,非零氧化态的金属或准金属原子在形成碳基纳米结构期间不会降低至零氧化态。 在一些情况下,非零氧化态的金属或准金属原子在形成碳基纳米结构期间不形成碳化物。
    • 7. 发明申请
    • CONTROLLED-ORIENTATION FILMS AND NANOCOMPOSITES INCLUDING NANOTUBES OR OTHER NANOSTRUCTURES
    • 控制膜和纳米复合材料,包括纳米管或其他纳米结构
    • US20100196695A1
    • 2010-08-05
    • US12618203
    • 2009-11-13
    • Enrique J. GarciaAnastasios John HartDiego S. SaitoBrian L. WardleHulya Cebeci
    • Enrique J. GarciaAnastasios John HartDiego S. SaitoBrian L. WardleHulya Cebeci
    • B32B5/16B29C43/02B29C71/02B29C59/02B05D3/12B05D3/02B32B38/10
    • C01B32/16B82Y30/00B82Y40/00C01B32/158C01B2202/08C01B2202/36D01F9/127Y10T156/1111Y10T428/25
    • Generally, the present invention provides methods for the production of materials comprising a plurality of nanostructures such as nanotubes (e.g., carbon nanotubes) and related articles. The plurality of nanostructures may be provided such that their long axes are substantially aligned and, in some cases, continuous from end to end of the sample. For example, in some cases, the nanostructures may be fabricated by uniformly growing the nanostructures on the surface of a substrate, such that the long axes are aligned and non-parallel to the substrate surface. The nanostructures may be, in some instances, substantially perpendicular to the substrate surface. In one set of embodiments, a force with a component normal to the long axes of the nanostructures may be applied to the substantially aligned nanostructures. The application of a force may result in a material comprising a relatively high volume fraction or mass density of nanostructures. In some instances, the application of a force may result in a material comprising relatively closely-spaced nanostructures. The materials described herein may be further processed for use in various applications, such as composite materials (e.g., nanocomposites). For example, a set of aligned nanostructures may be formed, and, after the application of a force, transferred, either in bulk or to another surface, and combined with another material (e.g., to form a nanocomposite) to enhance the properties of the material.
    • 通常,本发明提供了生产包含多个纳米结构如纳米管(例如碳纳米管)和相关制品的材料的方法。 可以提供多个纳米结构,使得它们的长轴基本上对准,并且在一些情况下,连续地从样品的端部到末端。 例如,在一些情况下,纳米结构可以通过在衬底的表面上均匀地生长纳米结构来制造,使得长轴对准并且不平行于衬底表面。 在一些情况下,纳米结构可以基本上垂直于衬底表面。 在一组实施例中,具有垂直于纳米结构的长轴的分量的力可以施加到基本排列的纳米结构。 施加力可导致包含相对较高体积分数或质量密度的纳米结构的材料。 在一些情况下,施加力可导致包含相对紧密间隔的纳米结构的材料。 本文所述的材料可以进一步加工用于各种应用中,例如复合材料(例如纳米复合材料)。 例如,可以形成一组对齐的纳米结构,并且在施加力之后,或者在本体或另一表面中转移,并与另一种材料(例如,以形成纳米复合材料)结合以增强其性质 材料。