专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08178372B2 Method for production of a plurality of semiconductor chips, and a semiconductor component 有权
标题翻译：用于制造多个半导体芯片的方法以及半导体部件
公开(公告)号：US08178372B2
公开(公告)日：2012-05-15
申请号：US11541132
申请日：2006-09-28
申请人： Stephan Lutgen , Tony Albrecht , Wolfgang Reill
发明人： Stephan Lutgen , Tony Albrecht , Wolfgang Reill
IPC分类号： H01L21/78
CPC分类号： H01S5/0425 , H01L33/0079 , H01L33/0095 , H01L33/641 , H01L2924/0002 , H01S5/02 , H01S5/0217 , H01S5/0224 , H01S5/02476 , H01S5/041 , H01S5/14 , H01L2924/00
摘要： A method for production of a plurality of semiconductor chips (6) in a wafer composite. A semiconductor layer sequence (2) is grown on a growth substrate (1), metallization (3) is applied to the semiconductor layer sequence (2), a metal layer (4) is electrochemically deposited onto the metallization (3), and the semiconductor layer sequence (2) is then structured and separated to form individual semiconductor chips (6). The electrochemically applied metal layer (4) is particularly suitable for use as a heat spreader, for dissipation of the heat produced by the semiconductor chips (6).
摘要翻译：一种用于在晶片复合材料中制造多个半导体芯片（6）的方法。在生长衬底（1）上生长半导体层序列（2），向半导体层序列（2）施加金属化（3），金属层（4）电化学沉积到金属化层（3）上，半导体层序列（2）然后被构造和分离以形成单独的半导体芯片（6）。电化学施加的金属层（4）特别适合用作散热器，用于散发由半导体芯片（6）产生的热量。

2. 发明申请

US20090201958A1 Lateral optically pumped surface-emitting semiconductor laser on a heat sink 有权
标题翻译：横向光泵浦表面发射半导体激光器在散热片上
公开(公告)号：US20090201958A1
公开(公告)日：2009-08-13
申请号：US11663617
申请日：2005-09-20
申请人： Tony Albrecht , Stephan Lutgen , Wolfgang Reill , Thomas Schwarz , Ulrich Steegmuller
发明人： Tony Albrecht , Stephan Lutgen , Wolfgang Reill , Thomas Schwarz , Ulrich Steegmuller
IPC分类号： H01S3/04 , H01L21/00 , H01S5/026
CPC分类号： H01S5/02248 , H01L2224/48091 , H01L2224/48227 , H01L2924/19107 , H01S3/0815 , H01S3/109 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/183 , H01S5/2027 , H01S5/4056 , H01L2924/00014
摘要： A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.
摘要翻译：一种表面发射半导体激光器件，包括至少一个具有垂直发射极（1）和至少一个泵浦辐射源（2）的表面发射半导体激光器（21），所述至少一个表面发射半导体激光器（21）沿着彼此一体地堆叠在共同的衬底（13）上，被描述。半导体激光装置还具有与半导体激光器（21）热接触的导热元件（18），并且具有设置用于安装在载体（27）上的安装区域。进一步描述制造这种表面发射半导体激光器件的方法。

3. 发明授权

US07817695B2 Lateral optically pumped surface-emitting semiconductor laser on a heat sink 有权
标题翻译：横向光泵浦表面发射半导体激光器在散热片上
公开(公告)号：US07817695B2
公开(公告)日：2010-10-19
申请号：US11663617
申请日：2005-09-20
申请人： Tony Albrecht , Stephan Lutgen , Wolfgang Reill , Thomas Schwarz , Ulrich Steegmüller
发明人： Tony Albrecht , Stephan Lutgen , Wolfgang Reill , Thomas Schwarz , Ulrich Steegmüller
IPC分类号： H01S5/00
CPC分类号： H01S5/02248 , H01L2224/48091 , H01L2224/48227 , H01L2924/19107 , H01S3/0815 , H01S3/109 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/183 , H01S5/2027 , H01S5/4056 , H01L2924/00014
摘要： A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.
摘要翻译：一种表面发射半导体激光器件，包括至少一个具有垂直发射极（1）和至少一个泵浦辐射源（2）的表面发射半导体激光器（21），所述至少一个表面发射半导体激光器（21）沿着彼此一体地堆叠在共同的衬底（13）上，被描述。半导体激光装置还具有与半导体激光器（21）热接触的导热元件（18），并且具有设置用于安装在载体（27）上的安装区域。进一步描述制造这种表面发射半导体激光器件的方法。

4. 发明申请

US20100124246A1 METHOD FOR PRODUCTION OF A PLURALITY OF SEMICODUCTOR CHIPS, AND A SEMICONDUCTOR COMPONENT 有权
标题翻译：生产半导体晶片的方法和半导体元件
公开(公告)号：US20100124246A1
公开(公告)日：2010-05-20
申请号：US11541132
申请日：2006-09-28
申请人： Stephan Lutgen , Tony Albrecht , Wolfgang Reill
发明人： Stephan Lutgen , Tony Albrecht , Wolfgang Reill
IPC分类号： H01S5/026 , H01L21/78 , H01L23/48 , H01L33/62 , H01L23/34 , H01S5/00
CPC分类号： H01S5/0425 , H01L33/0079 , H01L33/0095 , H01L33/641 , H01L2924/0002 , H01S5/02 , H01S5/0217 , H01S5/0224 , H01S5/02476 , H01S5/041 , H01S5/14 , H01L2924/00
摘要： A method for production of a plurality of semiconductor chips (6) in a wafer composite. A semiconductor layer sequence (2) is grown on a growth substrate (1), metallization (3) is applied to the semiconductor layer sequence (2), a metal layer (4) is electrochemically deposited onto the metallization (3), and the semiconductor layer sequence (2) is then structured and separated to form individual semiconductor chips (6). The electrochemically applied metal layer (4) is particularly suitable for use as a heat spreader, for dissipation of the heat produced by the semiconductor chips (6).
摘要翻译：一种用于在晶片复合材料中制造多个半导体芯片（6）的方法。在生长衬底（1）上生长半导体层序列（2），向半导体层序列（2）施加金属化（3），金属层（4）电化学沉积到金属化层（3）上，半导体层序列（2）然后被构造和分离以形成单独的半导体芯片（6）。电化学施加的金属层（4）特别适合用作散热器，用于散发由半导体芯片（6）产生的热量。

5. 发明申请

US20050259700A1 Optically pumpable surface-emitting semiconductor laser device 审中-公开
标题翻译：光泵浦表面发射半导体激光器件
公开(公告)号：US20050259700A1
公开(公告)日：2005-11-24
申请号：US11188203
申请日：2005-07-22
申请人： Werner Spath , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmuller
发明人： Werner Spath , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmuller
IPC分类号： H01S5/026 , H01S5/04 , H01S5/062 , H01S5/10 , H01S5/14 , H01S5/183 , H01S3/10
CPC分类号： H01S5/141 , H01S5/026 , H01S5/041 , H01S5/06226 , H01S5/1032 , H01S5/1071 , H01S5/18305 , H01S5/1835 , H01S5/4056
摘要： In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.
摘要翻译：在具有具有辐射发生有源层的垂直发射器的可光学泵浦的表面发射半导体激光器件中，提供用于调制表面发射半导体器件的输出功率的至少一个调制辐射源。调制辐射源由具有有源层的边缘发射半导体结构形成，并且其被设置为使得在操作期间辐射到垂直发射极的辐射生成有源层。这产生了高功率和高光束质量的容易调制的表面发射激光源。优选地，在半导体激光器件中设置用于光学泵浦垂直发射极的有源层的泵浦辐射源。

6. 发明授权

US08351479B2 Optoelectronic semiconductor element 有权
标题翻译：光电半导体元件
公开(公告)号：US08351479B2
公开(公告)日：2013-01-08
申请号：US12293057
申请日：2007-03-15
申请人： Stephan Lutgen , Peter Brick , Tony Albrecht
发明人： Stephan Lutgen , Peter Brick , Tony Albrecht
IPC分类号： H01S5/183 , H01S5/026 , H01S5/04
CPC分类号： H01S5/18388 , H01S3/108 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/227 , H01S5/4025 , H01S5/4031
摘要： An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.
摘要翻译：光电子半导体部件具有包括发射垂直发射极区域（2）的表面的半导体本体（1），所述表面发射垂直发射极区域包括垂直发射极层（3），设置用于光学泵浦垂直发射极层（3）的至少一个泵浦源（4）和在垂直发射极层中产生的电磁辐射（31）离开半导体本体（1）的辐射通道区域（26），其中泵浦源（4）和垂直发射极层（3）距离一个距离另一个在垂直方向。

7. 发明授权

US07408972B2 Optically pumped semiconductor laser device 有权
标题翻译：光泵浦半导体激光器件
公开(公告)号：US07408972B2
公开(公告)日：2008-08-05
申请号：US10579519
申请日：2004-11-09
申请人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
发明人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
IPC分类号： H01S3/091 , H01S3/08
CPC分类号： H01S5/183 , H01H13/705 , H01H13/86 , H01H2209/07 , H01H2223/008 , H01H2223/034 , H01H2239/032 , H01H2239/034 , H01H2239/038 , H01S3/094084 , H01S5/026 , H01S5/041 , H01S5/101 , H01S5/1082 , H01S5/1085 , H01S5/4031 , H01S5/4056
摘要： An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
摘要翻译：一种具有表面发射垂直发射区域（1）和至少一个用于光学泵浦垂直发射区域（1）的单片集成泵浦辐射源（2）的光泵浦半导体激光器件。半导体激光器件的特征在于泵辐射以不同辐射方向的部分束辐射线的形式进入垂直发射区域（1），使得泵浦辐射和垂直发射区域的基本模式 1）具有适合于该基本模式的激励的重叠。该装置基于以下事实：当泵浦辐射的空间强度分布与基本模式的轮廓匹配时，优选地激发垂直发射区域（1）的基本模式。

8. 发明授权

US07570682B2 VCSEL pumped in a monolithically optical manner and comprising a laterally applied edge emitter 有权
标题翻译： VCSEL以单片光学方式泵送并且包括横向施加的边缘发射器
公开(公告)号：US07570682B2
公开(公告)日：2009-08-04
申请号：US10579528
申请日：2004-11-09
申请人： Tony Albrecht , Peter Brick , Stephan Lutgen
发明人： Tony Albrecht , Peter Brick , Stephan Lutgen
IPC分类号： H01S5/00 , H01S3/091
CPC分类号： H01S5/041 , H01S5/026 , H01S5/0425 , H01S5/14 , H01S5/183 , H01S5/209 , H01S5/4031 , H01S5/4056
摘要： A semiconductor laser device comprising an optically pumped surface-emitting vertical emitter region (2) which has an active radiation-emitting vertical emitter layer (3) and has at least one monolithically integrated pump radiation source (5) for optically pumping the vertical emitter region (2), which has an active radiation-emitting pump layer (6). The pump layer (6) follows the vertical emitter layer (3) in the vertical direction and a conductive layer (13) is provided between the vertical emitter layer (3) and the pump layer (6). Furthermore, a contact (9) is applied on the side of the semiconductor laser device which is closer to the pump layer (6) than to the conductive layer (13). An electrical field can be applied between this contact (9) and the conductive layer (13) for generating pump radiation (7) by charge carrier injection.
摘要翻译：一种半导体激光器件，包括具有有源辐射发射垂直发射极层（3）的光泵浦表面发射垂直发射极区（2），并且具有至少一个单片集成泵浦辐射源（5），用于光学泵浦垂直发射极区（2），其具有主动辐射发射泵浦层（6）。泵层（6）在垂直方向上跟随垂直发射极层（3），并且在垂直发射极层（3）和泵浦层（6）之间提供导电层（13）。此外，在半导体激光器件的比导电层（13）更靠近泵浦层（6）的一侧上施加触点（9）。可以在该触点（9）和导电层（13）之间施加电场，以通过电荷载体注入产生泵浦辐射（7）。

9. 发明申请

US20070201531A1 OPTICALLY PUMPED SEMICONDUCTOR LASER DEVICE 有权
标题翻译：光学泵浦半导体激光器件
公开(公告)号：US20070201531A1
公开(公告)日：2007-08-30
申请号：US10579519
申请日：2004-11-09
申请人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
发明人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
IPC分类号： H01S3/093 , H01S3/081
CPC分类号： H01S5/183 , H01H13/705 , H01H13/86 , H01H2209/07 , H01H2223/008 , H01H2223/034 , H01H2239/032 , H01H2239/034 , H01H2239/038 , H01S3/094084 , H01S5/026 , H01S5/041 , H01S5/101 , H01S5/1082 , H01S5/1085 , H01S5/4031 , H01S5/4056
摘要： An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
摘要翻译：一种具有表面发射垂直发射区域（1）和至少一个用于光学泵浦垂直发射区域（1）的单片集成泵浦辐射源（2）的光泵浦半导体激光器件。半导体激光器件的特征在于泵辐射以不同辐射方向的部分束辐射线的形式进入垂直发射区域（1），使得泵浦辐射和垂直发射区域的基本模式 1）具有适合于该基本模式的激励的重叠。该装置基于以下事实：当泵浦辐射的空间强度分布与基本模式的轮廓匹配时，优选地激发垂直发射区域（1）的基本模式。

10. 发明授权

US06947460B2 Optically pumpable surface-emitting semiconductor laser device 失效
公开(公告)号：US06947460B2
公开(公告)日：2005-09-20
申请号：US10402814
申请日：2003-03-28
申请人： Werner Späth , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmüller
发明人： Werner Späth , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmüller
IPC分类号： H01S5/026 , H01S5/04 , H01S5/062 , H01S5/10 , H01S5/14 , H01S5/183 , H01S5/00 , H01S3/08 , H01S3/091 , H01S3/092
CPC分类号： H01S5/141 , H01S5/026 , H01S5/041 , H01S5/06226 , H01S5/1032 , H01S5/1071 , H01S5/18305 , H01S5/1835 , H01S5/4056
摘要： In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式