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1. 发明授权

US08426843B2 Radiation-emitting semiconductor body 有权
标题翻译：辐射发射半导体体
公开(公告)号：US08426843B2
公开(公告)日：2013-04-23
申请号：US12680620
申请日：2008-08-28
申请人： Tony Albrecht , Stefan Bader , Berthold Hahn
发明人： Tony Albrecht , Stefan Bader , Berthold Hahn
IPC分类号： H01L33/30
CPC分类号： H01L33/06 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： Described is a radiation-emitting semiconductor body (1) with an active layer (2) for generation of radiation of a first wavelength (λ1) and a reemission layer (3) which comprises a quantum well structure (4) comprising a quantum layer structure (5) and a barrier layer structure (6). The reemission layer is intended for generation of incoherent radiation of a second wavelength (λ2) by absorption of the radiation of the first wavelength in the barrier layer structure.
摘要翻译：描述了具有用于产生第一波长（λ1）和再发射层（3）的辐射的有源层（2）的辐射发射半导体本体（1），其包括量子阱结构（4），其包括量子层结构（5）和阻挡层结构（6）。再发射层旨在通过吸收势垒层结构中的第一波长的辐射来产生第二波长（λ2）的非相干辐射。

2. 发明授权

US07620088B2 Surface emitting-semiconductor laser component featuring emission in a vertical direction 有权
标题翻译：具有垂直方向发射的表面发射半导体激光器元件
公开(公告)号：US07620088B2
公开(公告)日：2009-11-17
申请号：US11597951
申请日：2005-04-29
申请人： Wilhelm Stein , Tony Albrecht , Peter Brick
发明人： Wilhelm Stein , Tony Albrecht , Peter Brick
IPC分类号： H01S5/00 , H01S3/10
CPC分类号： H01S5/18394 , H01S3/109 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/141 , H01S5/18355 , H01S5/18386 , H01S2301/18
摘要： A surface-emitting semiconductor laser component, in particular an electrically pumped semiconductor laser component, featuring emission in a vertical direction. The component is provided for the generation of laser radiation by means of an external optical resonator (4, 5). The component comprises a semiconductor body with a semiconductor layer sequence (2) having a lateral main direction of extension and an active zone (3) provided for generation of radiation. A radiation-transmissive contact layer (6) is arranged within the resonator and is electrically conductively connected to the semiconductor body.
摘要翻译：表面发射半导体激光器部件，特别是具有在垂直方向上发射的电泵浦半导体激光器部件。该组件被提供用于通过外部光学谐振器（4,5）产生激光辐射。该部件包括具有半导体层序列（2）的半导体本体，该半导体层序列（2）具有横向主要延伸方向，以及提供用于产生辐射的活动区域（3）。辐射透射接触层（6）布置在谐振器内并与半导体本体导电连接。

3. 发明授权

US07408972B2 Optically pumped semiconductor laser device 有权
标题翻译：光泵浦半导体激光器件
公开(公告)号：US07408972B2
公开(公告)日：2008-08-05
申请号：US10579519
申请日：2004-11-09
申请人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
发明人： Wolfgang Schmid , Peter Brick , Stephan Lutgen , Tony Albrecht , Franz Eberhard
IPC分类号： H01S3/091 , H01S3/08
CPC分类号： H01S5/183 , H01H13/705 , H01H13/86 , H01H2209/07 , H01H2223/008 , H01H2223/034 , H01H2239/032 , H01H2239/034 , H01H2239/038 , H01S3/094084 , H01S5/026 , H01S5/041 , H01S5/101 , H01S5/1082 , H01S5/1085 , H01S5/4031 , H01S5/4056
摘要： An optically pumped semiconductor laser device having a surface-emitting vertical emission region (1) and at least one monolithically integrated pump radiation source (2) for optically pumping the vertical emission region (1). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region (1) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region (1) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region (1) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
摘要翻译：一种具有表面发射垂直发射区域（1）和至少一个用于光学泵浦垂直发射区域（1）的单片集成泵浦辐射源（2）的光泵浦半导体激光器件。半导体激光器件的特征在于泵辐射以不同辐射方向的部分束辐射线的形式进入垂直发射区域（1），使得泵浦辐射和垂直发射区域的基本模式 1）具有适合于该基本模式的激励的重叠。该装置基于以下事实：当泵浦辐射的空间强度分布与基本模式的轮廓匹配时，优选地激发垂直发射区域（1）的基本模式。

4. 发明申请

US20080073655A1 Optoelectronic semiconductor chip 审中-公开
标题翻译：光电半导体芯片
公开(公告)号：US20080073655A1
公开(公告)日：2008-03-27
申请号：US11901666
申请日：2007-09-17
申请人： Tony Albrecht , Georg Bruderl , Volker Harle , Lutz Hoppel , Martin Strassburg
发明人： Tony Albrecht , Georg Bruderl , Volker Harle , Lutz Hoppel , Martin Strassburg
IPC分类号： H01L31/0236 , H01L33/00
CPC分类号： H01L33/24 , H01L21/02389 , H01L21/0254 , H01L21/02658 , H01L31/02363 , H01L33/007 , H01L2924/0002 , H01S5/1231 , Y02E10/50 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises a growth substrate with a structured growth area (2) having a multiplicity of elevations (4) and depressions (3), and an active layer sequence (5) applied to the growth area (2).
摘要翻译：光电子半导体芯片包括具有多个高度（4）和凹陷（3）的结构化生长区域（2）的生长衬底和应用于生长区域（2）的活性层序列（5）。

5. 发明授权

US07209506B2 Optically pumped semiconductor device and method for producing it 有权
标题翻译：光泵浦半导体器件及其制造方法
公开(公告)号：US07209506B2
公开(公告)日：2007-04-24
申请号：US10903411
申请日：2004-07-30
申请人： Tony Albrecht
发明人： Tony Albrecht
IPC分类号： H01S5/00 , H01S3/14 , H01S3/091 , H01S3/082
CPC分类号： H01S5/141 , H01S5/026 , H01S5/041 , H01S5/18308 , H01S5/2072 , H01S5/4056
摘要： An optically pumped radiation-emitting semiconductor device with a surface-emitting quantum well structure (10), which has at least one quantum layer (11), and an active layer (8) for generating pump radiation (9) for optically pumping the quantum well structure (10), which is arranged parallel to the quantum layer (11). The semiconductor device has at least one emission region (12), in which the quantum well structure (10) is optically pumped, and at least one pump region (13). The quantum well structure (10) and the active pump layer (8) extend over the pump region (13) and over the emission region (12) of the semiconductor device, and the pump radiation (9) is coupled into the emission region (12) in the lateral direction.
摘要翻译：具有表面发射量子阱结构（10）的光泵浦辐射发射半导体器件（10）具有至少一个量子层（11）和用于产生泵浦辐射的有源层（8），用于光学泵浦量子阱结构（10），其平行于量子层（11）排列。半导体器件具有至少一个发光区域（12），其中量子阱结构（10）被光学泵浦，以及至少一个泵浦区域（13）。量子阱结构（10）和有源泵层（8）在泵浦区域（13）上延伸超过半导体器件的发射区域（12），泵浦辐射（9）耦合到发射区域 12）在横向上。

6. 发明授权

US06979842B2 Opto-electronic component with radiation-transmissive electrical contact layer 有权
标题翻译：具有辐射透射电接触层的光电子元件
公开(公告)号：US06979842B2
公开(公告)日：2005-12-27
申请号：US10749433
申请日：2003-12-31
申请人： Wilhelm Stein , Ralph Wirth , Tony Albrecht
发明人： Wilhelm Stein , Ralph Wirth , Tony Albrecht
IPC分类号： H01L33/44 , H01L33/00
CPC分类号： H01L33/44
摘要： An optoelectronic component with an epitaxial semiconductor layer sequence having an active zone that emits electromagnetic radiation, and at least one electrical contact region having at least one radiation-transmissive electrical contact layer, which contains ZnO and is electrically conductively connected to an outer semiconductor layer. The contact layer is provided with watertight material in such a way that it is substantially protected against moisture.
摘要翻译：具有外延半导体层序列的光电子部件具有发射电磁辐射的有源区，以及至少一个具有至少一个辐射透射电接触层的电接触区，该电接触区含有ZnO并与外部半导体层导电连接。接触层以防水材料的方式设置有防水材料。

7. 发明申请

US20050056904A1 Radiation-sensitive semiconductor body having an integrated filter layer 有权
标题翻译：具有集成滤光层的辐射敏感半导体本体
公开(公告)号：US20050056904A1
公开(公告)日：2005-03-17
申请号：US10909036
申请日：2004-07-30
申请人： Tony Albrecht , Peter Brick , Glenn-Yves Plaine , Marc Philippens
发明人： Tony Albrecht , Peter Brick , Glenn-Yves Plaine , Marc Philippens
IPC分类号： H01L31/02 , H01L31/00
CPC分类号： H01L31/02162 , H01L31/0547 , Y02E10/52
摘要： A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between λ1 and λ2 where λ2>λ1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below λ2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below λ1, and passes electromagnetic radiation at a wavelength above λ1.
摘要翻译：一种辐射敏感半导体本体，其在至少两个接触层（6,7）之间具有至少一个辐射吸收有源区域（2），并接收λ1和λ2之间的波长范围的电磁辐射，其中λ2>λ1。在有源区域（2）和辐射输入表面（9）之间布置滤光层（5）。有源区域（2）检测波长低于λ2的电磁辐射。滤波器层（5）吸收波长低于λ1的电磁辐射，并通过波长高于λ1的电磁辐射。

8. 发明申请

US20140138730A1 Method of Producing a Plurality of Optoelectronic Semiconductor Chips 审中-公开
标题翻译：制造多种光电半导体芯片的方法
公开(公告)号：US20140138730A1
公开(公告)日：2014-05-22
申请号：US14126033
申请日：2012-06-01
申请人： Martin Reufer , Markus Maute , Tony Albrecht
发明人： Martin Reufer , Markus Maute , Tony Albrecht
IPC分类号： H01L33/24 , H01L33/00
CPC分类号： H01L33/24 , H01L33/0062 , H01L33/007 , H01L33/0095 , H01L33/22 , H01L33/32 , H01L33/44
摘要： A method of producing a plurality of optoelectronic semiconductor chips is provided. At least one trench is incorporated into the semiconductor body by means of at least one structuring process. The trench breaks through the active zone in a vertical direction. At least one cleaning process is performed at least on exposed locations of the semiconductor body in the region of the trench. The cleaning process includes at least one plasma cleaning process, and the plasma cleaning process at least reduces a number and/or a spatial expansion of structuring residues at exposed locations of the semiconductor body at least in the region of the trench. At least one passivation layer is applied at least to exposed locations of the semiconductor body in the region of the trench.
摘要翻译：提供了一种制造多个光电子半导体芯片的方法。通过至少一个结构化工艺将至少一个沟槽结合到半导体本体中。沟槽在垂直方向穿过活动区域。至少在沟槽区域中至少在半导体本体的暴露位置上进行至少一次清洁处理。清洁过程包括至少一个等离子体清洁过程，并且等离子体清洁过程至少在沟槽的区域中减少半导体本体的暴露位置处的构造残余物的数量和/或空间扩展。至少一个钝化层至少施加到沟槽区域中的半导体本体的暴露位置。

9. 发明授权

US08710512B2 Optoelectronic semiconductor chip comprising a reflective layer 有权
标题翻译：包括反射层的光电半导体芯片
公开(公告)号：US08710512B2
公开(公告)日：2014-04-29
申请号：US12922577
申请日：2009-04-24
申请人： Tony Albrecht , Andreas Weimar , Anna Kasprzak-Zablocka , Christian Eichinger , Kerstin Neveling
发明人： Tony Albrecht , Andreas Weimar , Anna Kasprzak-Zablocka , Christian Eichinger , Kerstin Neveling
IPC分类号： H01L33/42
CPC分类号： H01L33/385 , H01L33/08 , H01L33/40 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip, comprising a first contact location (1) and a second contact location (2), and a reflective layer (3), which is directly electrically conductively connected to the second contact location. The reflective layer contains a metal that tends toward migration, and the reflective layer is arranged in such a way that a migration path (4) for the metal can form between the second and the first contact location. A means (6) which, during operation of the semiconductor chip, forms an electric field that counteracts the migration of the metal is provided at the semiconductor chip.
摘要翻译：包括第一接触位置（1）和第二接触位置（2）的光电子半导体芯片以及直接导电地连接到第二接触位置的反射层（3）。反射层含有倾向于迁移的金属，并且反射层以这样的方式布置，使得金属的迁移路径（4）可以形成在第二和第一接触位置之间。在半导体芯片的半导体芯片工作期间形成抵消金属迁移的电场的装置（6）。

10. 发明授权

US08592236B2 Method for manufacture of optically pumped, surface-emitting semiconductor laser device 有权
标题翻译：光泵浦表面发射半导体激光器件的制造方法
公开(公告)号：US08592236B2
公开(公告)日：2013-11-26
申请号：US11986909
申请日：2007-11-27
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01L21/00
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.
摘要翻译：一种用于制造光泵浦表面发射半导体激光器件的方法，其中将具有量子限制结构的表面发射半导体激光器层序列施加到公共衬底上。除去期望的激光区域外的表面发射半导体激光层序列并暴露区域。将边缘发射半导体层序列施加在公共衬底上的暴露区域上，其中通过去除步骤暴露暴露区域，并且暴露区域适于将泵浦辐射传输到量子限制结构中。然后在边缘发射半导体层序列中形成电流注入路径。

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