专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07683445B2 Enhanced permeability device structures and method 失效
标题翻译：增强渗透性装置结构和方法
公开(公告)号：US07683445B2
公开(公告)日：2010-03-23
申请号：US11740066
申请日：2007-04-25
申请人： Srinivas V. Pietambaram , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Srinivas V. Pietambaram , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/838 , Y10S977/933
摘要： Low power magnetoelectronic device structures and methods therefore are provided. The magnetoelectronic device structure (100, 150, 450, 451) comprises a programming line (104, 154, 156, 454, 456), a magnetoelectronic device (102, 152, 452) magnetically coupled to the programming line (104, 154, 156, 454, 456), and an enhanced permeability dielectric (EPD) material (106, 108, 110, 158, 160, 162, 458, 460, 462) disposed adjacent the magnetoelectronic device. The EPD material (106, 108, 110, 158, 160, 162, 458, 460, 462) comprises multiple composite layers (408) of magnetic nano-particles (406) embedded in a dielectric matrix (409). The composition of the composite layers is chosen to provide a predetermined permeability profile. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating the magnetoelectronic device (102, 152, 452) and depositing the programming line (104, 154, 156, 454, 456). The EPD material (106, 108, 110, 158, 160, 162, 458, 460, 462) comprising the multiple composite layers (408) is formed around the magnetoelectronic device (102, 152, 452) and/or between the device (102, 152, 452) and the programming line (104, 154, 156, 454, 456). The presence of the EPD structure (470, 480, 490) in proximity to the programming line (104, 154, 156, 454, 456) and/or the magnetoelectronic device (102, 152, 452) reduces the required programming current.
摘要翻译：因此提供了低功率磁电子器件结构和方法。磁电子器件结构（100,150,450,451）包括编程线（104,154,156,454,456），磁耦合到编程线（104,154,452）的磁电子器件（102,152,452） 156,454,456）以及邻近磁电子器件设置的增强磁导率电介质（EPD）材料（106,108,110,158,160,162,458,460,462）。 EPD材料（106,108,110,158,160,162,458,460,462）包括嵌入电介质矩阵（409）中的磁性纳米颗粒（406）的多个复合层（408）。选择复合层的组成以提供预定的渗透率分布。还提供了一种制造磁电子器件结构的方法。该方法包括制造磁电子器件（102,152,452）并沉积编程线（104,154,156,454,456）。包括多个复合层（408）的EPD材料（106,108,110,158,160,162,458,460,462）形成在磁电子器件（102,152,452）周围和/或在器件（ 102，152,452）和编程线（104,154,156,454,465）。靠近编程线（104,154,156,454,465）和/或磁电子器件（102,152,452）的EPD结构（470,480,490）的存在减少了所需的编程电流。

2. 发明申请

US20070278547A1 MRAM synthetic anitferomagnet structure 有权
标题翻译： MRAM合成非铁磁结构
公开(公告)号：US20070278547A1
公开(公告)日：2007-12-06
申请号：US11444089
申请日：2006-05-31
申请人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高H H k（单轴各向异性）的组合，包括表现出明确定义的高电平触发器的固定磁场来避免钉扎层，高饱和场（饱和磁场），理想的软磁特性表现出明确的容易和硬轴。

3. 发明授权

US07285835B2 Low power magnetoelectronic device structures utilizing enhanced permeability materials 有权
标题翻译：利用增强的渗透性材料的低功率磁电子器件结构
公开(公告)号：US07285835B2
公开(公告)日：2007-10-23
申请号：US11066884
申请日：2005-02-24
申请人： Nicholas D. Rizzo , Renu Dave , Jon M. Slaughter , Srinivas V. Pietambaram
发明人： Nicholas D. Rizzo , Renu Dave , Jon M. Slaughter , Srinivas V. Pietambaram
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/838 , Y10S977/933
摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.
摘要翻译：提供了低功率磁电子器件结构及其制造方法。一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。增强的导电介电材料具有不小于约1.5的渗透性。还提供了一种制造磁电子器件结构的方法。该方法包括制造磁电子器件（102）并沉积导线（104）。形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于磁电子器件。

4. 发明授权

US08497538B2 MRAM synthetic antiferromagnet structure 有权
标题翻译： MRAM合成反铁磁结构
公开(公告)号：US08497538B2
公开(公告)日：2013-07-30
申请号：US11444089
申请日：2006-05-31
申请人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层容易和坚硬的轴。

5. 发明授权

US07635902B2 Low power magnetoelectronic device structures utilizing enhanced permeability materials 失效
标题翻译：利用增强的渗透性材料的低功率磁电子器件结构
公开(公告)号：US07635902B2
公开(公告)日：2009-12-22
申请号：US11867189
申请日：2007-10-04
申请人： Nicholas D. Rizzo , Renu Dave , Jon M. Slaughter , Srinivas V. Pietambaram
发明人： Nicholas D. Rizzo , Renu Dave , Jon M. Slaughter , Srinivas V. Pietambaram
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/838 , Y10S977/933
摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5.A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.
摘要翻译：提供了低功率磁电子器件结构及其制造方法。一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。增强的导电介电材料具有不小于约1.5的渗透性。还提供了一种制造磁电子器件结构的方法。该方法包括制造磁电子器件（102）并沉积导线（104）。形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于磁电子器件。

6. 发明申请

US20080096290A1 Magnetic tunnel junction memory and method with etch-stop layer 有权
标题翻译：磁隧道结记忆和具有蚀刻停止层的方法
公开(公告)号：US20080096290A1
公开(公告)日：2008-04-24
申请号：US11584411
申请日：2006-10-19
申请人： Kenneth H. Smith , Brian R. Butcher , Gregory W. Grynkewich , Srinivas V. Pietambaram , Nicholas D. Rizzo
发明人： Kenneth H. Smith , Brian R. Butcher , Gregory W. Grynkewich , Srinivas V. Pietambaram , Nicholas D. Rizzo
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： Methods and apparatus are provided for magnetoresistive memories employing magnetic tunnel junction (MTJ). The apparatus comprises a MTJ (61, 231), first (60, 220) and second (66, 236) electrodes coupled, respectively, to first (62, 232) and second (64, 234) magnetic layers of the MTJ (61, 231), first (54, 204) and second (92, 260) write conductors magnetically coupled to the MTJ (61, 231) and spaced apart from the first (60, 220) and second (66, 236) electrodes, and at least one etch-stop layer (82, 216) located between the first write conductor (54, 204) and the first electrode (60, 220), having an etch rate in a reagent for etching the MTJ (61, 231) and/or the first electrode (60, 220) that is at most 25% of the etch rate of the MTJ (61, 231) and/or first conductor (60, 220) to the same reagent, so as to allow portions of the MTJ (61, 231) and first electrode (60, 220) to be removed without affecting the underlying first write conductor (54, 204). In a further embodiment, a second etch-stop layer (90, 250) is located between the second electrode (66, 236) and the second write conductor (92, 260). Improved yield and performance are obtained.
摘要翻译：提供了采用磁隧道结（MTJ）的磁阻存储器的方法和装置。该装置包括MTJ（61,231），第一（60,220）和第二（66,236）电极，其分别耦合到MTJ（61）的第一（62,232）和第二（64,234）磁性层，231），第一（54,204）和第二（92,260）写入导体，其磁耦合到MTJ（61,231）并且与第一（60,220）和第二（66,236）电极间隔开，以及位于所述第一写入导体（54,204）和所述第一电极（60,220）之间的至少一个蚀刻停止层（82,216）具有用于蚀刻所述MTJ（61,231）的试剂中的蚀刻速率和 /或第一电极（60,220），其至多为MTJ（61,231）和/或第一导体（60,220）的蚀刻速率的25％的相同试剂，以便允许部分 MTJ（61,231）和第一电极（60,220）被去除而不影响下面的第一写入导体（54,204）。在另一实施例中，第二蚀刻停止层（90,250）位于第二电极（66,236）和第二写入导体（92,260）之间。获得了提高的产量和性能。

7. 发明授权

US07445943B2 Magnetic tunnel junction memory and method with etch-stop layer 有权
标题翻译：磁隧道结记忆和具有蚀刻停止层的方法
公开(公告)号：US07445943B2
公开(公告)日：2008-11-04
申请号：US11584411
申请日：2006-10-19
申请人： Kenneth H. Smith , Brian R. Butcher , Gregory W. Grynkewich , Srinivas V. Pietambaram , Nicholas D. Rizzo
发明人： Kenneth H. Smith , Brian R. Butcher , Gregory W. Grynkewich , Srinivas V. Pietambaram , Nicholas D. Rizzo
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： Methods and apparatus are provided for magnetoresistive memories employing magnetic tunnel junction (MTJ). The apparatus comprises a MTJ (61, 231), first (60, 220) and second (66, 236) electrodes coupled, respectively, to first (62, 232) and second (64, 234) magnetic layers of the MTJ (61, 231), first (54, 204) and second (92, 260) write conductors magnetically coupled to the MTJ (61, 231) and spaced apart from the first (60, 220) and second (66, 236) electrodes, and at least one etch-stop layer (82, 216) located between the first write conductor (54, 204) and the first electrode (60, 220), having an etch rate in a reagent for etching the MTJ (61, 231) and/or the first electrode (60, 220) that is at most 25% of the etch rate of the MTJ (61, 231) and/or first conductor (60, 220) to the same reagent, so as to allow portions of the MTJ (61, 231) and first electrode (60, 220) to be removed without affecting the underlying first write conductor (54, 204). In a further embodiment, a second etch-stop layer (90, 250) is located between the second electrode (66, 236) and the second write conductor (92, 260). Improved yield and performance are obtained.
摘要翻译：提供了采用磁隧道结（MTJ）的磁阻存储器的方法和装置。该装置包括MTJ（61,231），第一（60,220）和第二（66,236）电极，其分别耦合到MTJ（61）的第一（62,232）和第二（64,234）磁性层，231），第一（54,204）和第二（92,260）写入导体，其磁耦合到MTJ（61,231）并且与第一（60,220）和第二（66,236）电极间隔开，以及位于所述第一写入导体（54,204）和所述第一电极（60,220）之间的至少一个蚀刻停止层（82,216）具有用于蚀刻所述MTJ（61,231）的试剂中的蚀刻速率和 /或第一电极（60,220），其至多为MTJ（61,231）和/或第一导体（60,220）的蚀刻速率的25％的相同试剂，以便允许部分 MTJ（61,231）和第一电极（60,220）被去除而不影响下面的第一写入导体（54,204）。在另一实施例中，第二蚀刻停止层（90,250）位于第二电极（66,236）和第二写入导体（92,260）之间。获得了提高的产量和性能。

8. 发明授权

US07235408B2 Synthetic antiferromagnetic structure for magnetoelectronic devices 失效
标题翻译：用于磁电子器件的合成反铁磁结构
公开(公告)号：US07235408B2
公开(公告)日：2007-06-26
申请号：US11075587
申请日：2005-03-09
申请人： Jason Allen Janesky , Bradley N. Engel , Nicholas D. Rizzo , Jon M Slaughter
发明人： Jason Allen Janesky , Bradley N. Engel , Nicholas D. Rizzo , Jon M Slaughter
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12
摘要： A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.
摘要翻译：可以有利地用于诸如磁阻存储器单元的磁电子器件中的几乎平衡的合成反铁磁（SAF）结构包括两个铁磁层和分离两个铁磁层的反铁磁耦合层。 SAF自由层通过诸如退火，反铁磁耦合层的分层或在铁磁层的粗糙表面上形成反铁磁耦合层的处理，在反铁磁耦合层中形成弱耦合区域。与未处理的SAF自由层相比，弱耦合区域降低了SAF自由层的触发场。在这种结构的写入操作期间使用SAF触发器，并且其减少导致在写入操作期间较低的功耗并且相应地增加器件性能。

9. 发明授权

US07965543B2 Method for reducing current density in a magnetoelectronic device 有权
标题翻译：一种用于降低磁电子器件中的电流密度的方法
公开(公告)号：US07965543B2
公开(公告)日：2011-06-21
申请号：US12433670
申请日：2009-04-30
申请人： Jon M. Slaughter , Nicholas D. Rizzo
发明人： Jon M. Slaughter , Nicholas D. Rizzo
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/161 , G11C11/1675
摘要： A method for reducing spin-torque current density needed to switch a magnetoelectronic device (200, 300, 400), includes applying (602) a voltage bias having a predetermined polarity to the magnetoelectronic device (200, 300, 400) that creates a spin-polarized current with spin torque transfer to a synthetic antiferromagnet free layer (206), applying (604) a magnetic field having a predetermined direction to the magnetoelectronic device (200, 300, 400), removing (606) the applied magnetic field; and removing (608) the voltage bias subsequent to removing (606) the applied magnetic field, wherein the polarity of the voltage bias and the direction of the magnetic field leave the synthetic antiferromagnet free layer (206) in a predetermined magnetic state after the voltage bias is removed.
摘要翻译：一种用于减小切换磁电子器件（200,300,400）所需的自旋转矩电流密度的方法包括将具有预定极性的电压偏置（602）施加到产生旋转的磁电子器件（200,300,400）上具有自旋转矩传递到合成反铁磁自由层（206）的偏振电流，向磁电子器件（200,300,400）施加（604）具有预定方向的磁场，去除（606）所施加的磁场; 以及在去除（606）所施加的磁场之后去除（608）所述电压偏置，其中所述电压偏置的极性和所述磁场的方向在所述电压之后离开所述合成的反铁磁自由层（206）处于预定的磁状态偏移被去除。

10. 发明申请

US20080205130A1 MRAM FREE LAYER SYNTHETIC ANTIFERROMAGNET STRUCTURE AND METHODS 审中-公开
标题翻译： MRAM自由层合成抗体网络结构与方法
公开(公告)号：US20080205130A1
公开(公告)日：2008-08-28
申请号：US11679982
申请日：2007-02-28
申请人： Jijun Sun , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Jijun Sun , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： G11C11/15 , H01L21/00 , H01L29/82
CPC分类号： G11C11/16 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) structure for use with toggle MRAM devices and the like includes a tunnel barrier layer and a synthetic antiferromagnet (SAF) structure formed on the tunnel barrier layer, wherein the SAF includes a plurality (e.g., three or more) ferromagnetic layers antiferromagnetically or ferromagnetically coupled by a plurality of respective coupling layers. The bottom ferromagnetic layer adjacent the tunnel barrier layer has a high spin polarization and a high intrinsic anisotropy field (Hki) while one or more of the remaining ferromagnetic layers has a low intrinsic anisotropy field Hki.
摘要翻译：与切换MRAM器件等一起使用的磁隧道结（MTJ）结构包括形成在隧道势垒层上的隧道势垒层和合成反铁磁体（SAF）结构，其中SAF包括多个（例如三个或更多个）铁磁层通过多个相应的耦合层反铁磁或铁磁耦合。与隧道势垒层相邻的底部铁磁层具有高的自旋极化和高的本征各向异性场（H >Ki），而一个或多个剩余的铁磁层具有低的固有各向异性场H ki 。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式