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1. 发明授权

US08216703B2 Magnetic tunnel junction device 有权
标题翻译：磁隧道连接装置
公开(公告)号：US08216703B2
公开(公告)日：2012-07-10
申请号：US12035011
申请日：2008-02-21
申请人： Jijun Sun , Jon M. Slaughter
发明人： Jijun Sun , Jon M. Slaughter
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic tunnel junction (MTJ) (10) employing a dielectric tunneling barrier (16), useful in magnetoresistive random access memories (MRAMs) and other devices, has a synthetic antiferromagnet (SAF) structure (14, 16), comprising two ferromagnetic (FM) layers (26, 41; 51, 58; 61, 68) separated by a coupling layer (38, 56, 66). Improved magnetoresistance (MR) ratio is obtained by providing a further layer (44, 46, 46′, 47, 52, 62), e.g. containing Ta, preferably spaced apart from the coupling layer (38, 56, 66) by a FM layer (41, 30-2, 54). The further layer (44, 46, 46′, 47, 52, 62) may be a Ta dusting layer (44) covered by a FM layer (30-2), or a Ta containing FM alloyed layer (46), or a stack (46′) of interleaved FM and N-FM layers, or other combination (47, 62). Furthering these benefits, another FM layer, e.g., CoFe, NiFe, (30, 30-1, 51, 61) is desirably provided between the further layer (44, 46, 46′, 47, 52, 62) and the tunneling barrier (16). Ta, Zr, Hf, Ti, Mg, Nb, V, Zn, Cr, NiFeX, CoFeX and CoFeBX (X═Ta, Zr, Hf, Ti, Mg, Nb, V, Zn, Cr) are useful for the further layer (44, 46, 46′, 47, 52, 62).
摘要翻译：采用磁阻随机存取存储器（MRAM）和其它器件的电介质隧道势垒（16）的磁性隧道结（MTJ）（10）具有合成的反铁磁（SAF）结构（14,16），包括两个铁磁（ FM）层（26,41; 51,58; 61,68），由耦合层（38,56,66）分隔开。通过提供另外的层（44,46,46'，47,52,62），例如，可以获得改善的磁阻（MR）比。含有Ta，优选地通过FM层（41,30-2,54）与耦合层（38,56,66）间隔开。另外的层（44,46,46'，47,52,62）可以是由FM层（30-2）或含Ta的FM合金层（46）覆盖的Ta粉化层（44），或交错FM和N-FM层的叠层（46'），或其他组合（47,62）。进一步提高这些益处，期望地在另一层（44,46,46'，47,52,62）和隧道势垒之间提供另一个FM层，例如CoFe，NiFe（30,30-1,51,61）（16）。 Ta，Zr，Hf，Ti，Mg，Nb，V，Zn，Cr，NiFeX，CoFeX和CoFeBX（X = Ta，Zr，Hf，Ti，Mg，Nb，V，Zn，Cr）（44,46,46'，47,52,62）。

2. 发明申请

US20100276389A1 TWO-AXIS MAGNETIC FIELD SENSOR WITH SUBSTANTIALLY ORTHOGONAL PINNING DIRECTIONS 有权
标题翻译：双轴磁场传感器，具有极大的正交螺线方向
公开(公告)号：US20100276389A1
公开(公告)日：2010-11-04
申请号：US12433679
申请日：2009-04-30
申请人： Phillip G. MATHER , Jon M. SLAUGHTER
发明人： Phillip G. MATHER , Jon M. SLAUGHTER
IPC分类号： B44C1/22 , G08B17/12
CPC分类号： G01R31/318357 , B82Y25/00 , G01R33/072 , G01R33/093 , G01R33/098 , Y10T29/4902
摘要： A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layer with a properly aligned orienting field (90) and then removing the orienting field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions by one of 1) tailoring the intrinsic anisotropy of the reference layer during the depositing step, 2) forming a long axes of one of the patterned shapes (62, 63) at a non-orthogonal angle to the long axes of the other patterned shape (62, 63) when etched, or 3) applying a compensating field when pinning the reference layers.
摘要翻译：制造工艺和装置从两个差异传感器配置（201,211）提供高性能磁场传感器（200），其仅需要由单个参考层（60）形成的两个不同的钉扎轴（206,216），所述单个参考层被蚀刻成高纵横比形状（62,63），其长轴以不同取向绘制，使得在用适当对准的定向场（90）处理参考层，然后去除定向场时，高纵横比图案提供使得各图案形状（62,63）的磁化强制沿其各自期望的轴松弛的形状各向异性。在加热和冷却时，铁磁膜通过以下步骤中的一种被钉扎在不同的期望方向：1）在沉积步骤期间调整参考层的固有各向异性; 2）形成一个图案形状（62,63）的长轴，在蚀刻时与另一图案形状（62,63）的长轴成非正交角，或者3）在固定参考层时施加补偿场。

3. 发明授权

US07635654B2 Magnetic tunnel junction device with improved barrier layer 有权
标题翻译：具有改善阻挡层的磁隧道结器件
公开(公告)号：US07635654B2
公开(公告)日：2009-12-22
申请号：US11341986
申请日：2006-01-27
申请人： JiJun Sun , John T. Martin , Jon M. Slaughter
发明人： JiJun Sun , John T. Martin , Jon M. Slaughter
IPC分类号： H01L21/316 , H01L27/115
CPC分类号： H01L43/08 , H01L43/12
摘要： Methods and apparatus are provided for magnetic tunnel junction (MTJ) devices and arrays, comprising metal-insulator-metal (M-I-M) structures with opposed first and second ferro-magnetic electrodes with alterable relative magnetization direction. The insulator is formed by depositing an oxidizable material (e.g., Al) on the first electrode, naturally oxidizing it, e.g., at about 0.03 to 10 milli-Torr for up to a few thousand seconds at temperatures below about 35° C., then further rapidly (e.g., plasma) oxidizing at a rate much larger than that of the initial natural oxidation. The second electrode of the M-I-M structure is formed on this oxide. More uniform tunneling properties result. A second oxidizable material layer is optionally provided after the initial natural oxidation and before the rapid oxidation step during which it is substantially entirely converted to insulating oxide. A second natural oxidation cycle may be optionally provided before the second layer is rapidly oxidized.
摘要翻译：提供了用于磁性隧道结（MTJ）器件和阵列的方法和装置，其包括金属 - 绝缘体 - 金属（M-I-M）结构，具有相对的具有可变相对磁化方向的第一和第二铁磁电极。绝缘体通过在第一电极上沉积可氧化材料（例如，Al）而形成，其自然氧化，例如在低于约35℃的温度下在约0.03至10毫乇达数千秒，然后进一步快速（例如，等离子体）以比初始自然氧化的速率更大的速率氧化。在该氧化物上形成M-I-M结构的第二电极。导致更均匀的隧道性质。任选地，在初始自然氧化之后和快速氧化步骤之间提供第二可氧化材料层，在该氧化步骤期间，其基本上完全转化为绝缘氧化物。可以任选地在第二层被快速氧化之前提供第二自然氧化循环。

4. 发明授权

US07572645B2 Magnetic tunnel junction structure and method 失效
标题翻译：磁隧道结结构及方法
公开(公告)号：US07572645B2
公开(公告)日：2009-08-11
申请号：US11601129
申请日：2006-11-15
申请人： Jijun Sun , Renu W. Dave , Jason A. Janesky , Jon M. Slaughter
发明人： Jijun Sun , Renu W. Dave , Jason A. Janesky , Jon M. Slaughter
IPC分类号： H01L29/76
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/08
摘要： Methods and apparatus are provided for magnetic tunnel junctions (MTJs) (10, 50) employing synthetic antiferromagnet (SAF) free layers (14, 14′). The MTJ (10, 50) comprises a pinned ferromagnetic (FM) layer (32, 18), the SAF (14) and a tunneling barrier (16) therebetween. The SAF (14) has a first higher spin polarization FM layer (30) proximate the tunneling barrier (16) and a second FM layer (26) desirably separated from the first FM layer (30) by a coupling layer (28), with magnetostriction adapted to compensate the magnetostriction of the first FM layer (30). Such compensation reduces the net magnetostriction of the SAF (14) to near zero even with high spin polarization proximate the tunneling barrier (16). Higher magnetoresistance ratios (MRs) are obtained without adverse affect on other MTJ (10, 50) properties. NiFe combinations are desirable for the first (30) and second (26) free FM layers, with more Fe in the first (30) free layer and less Fe in the second (26) free layer. CoFeB and NiFeCo are also useful in the free layers.
摘要翻译：提供了使用合成反铁磁（SAF）自由层（14,14'）的磁隧道结（MTJ）（10,50）的方法和装置。 MTJ（10,50）包括钉扎铁磁（FM）层（32,18），SAF（14）和它们之间的隧道势垒（16）。 SAF（14）具有靠近隧道势垒（16）的第一高自旋极化FM层（30）和期望地通过耦合层（28）从第一FM层（30）分离的第二FM层（26），其中，磁致伸缩适于补偿第一FM层（30）的磁致伸缩。即使在靠近隧道势垒（16）的高自旋极化下，这种补偿也将SAF（14）的净磁致伸缩降低到接近于零。获得更高的磁阻比（MRs），而不影响其他MTJ（10,50）性能。对于第一（30）和第二（26）自由的FM层，NiFe组合是理想的，在第一（30）自由层中具有更多的Fe，在第二（26）自由层中具有更少的Fe。 CoFeB和NiFeCo也可用于自由层。

5. 发明授权

US07226796B2 Synthetic antiferromagnet structures for use in MTJs in MRAM technology 失效
标题翻译：在MRAM技术中用于MTJ的合成反铁磁体结构
公开(公告)号：US07226796B2
公开(公告)日：2007-06-05
申请号：US11182149
申请日：2005-07-15
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
摘要翻译：在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。该SAF由被耦合层隔开的两个铁磁层组成。耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。优选的基材是钌，优选的其它材料是钽。进一步提高这些优点，在钽和铁磁层之一的界面处加入钴铁。此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。耦合层本身也可以是合金。

6. 发明授权

US06967366B2 Magnetoresistive random access memory with reduced switching field variation 失效
标题翻译：具有减小的开关场变化的磁阻随机存取存储器
公开(公告)号：US06967366B2
公开(公告)日：2005-11-22
申请号：US10648466
申请日：2003-08-25
申请人： Jason A. Janesky , Bradley N. Engel , Jon M. Slaughter
发明人： Jason A. Janesky , Bradley N. Engel , Jon M. Slaughter
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01F41/30 , H01L29/76 , H01L31/119 , H01L43/08
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3254 , H01F41/302 , H01L43/08
摘要： An array of multi-state, multi-layer magnetic memory devices (10) wherein each memory device comprises a nonmagnetic spacer region (22) and a free magnetic region (24) positioned adjacent to a surface of the nonmagnetic spacer region, the free magnetic region including a plurality of magnetic layers (36,34,38), wherein the magnetic layer (36) in the plurality of magnetic layers positioned adjacent to the surface of the nonmagnetic spacer region has a thickness substantially greater than a thickness of each of the magnetic layers (34,38) subsequently grown thereon wherein the thickness is chosen to improve the magnetic switching variation so that the magnetic switching field for each memory device in the array of memory devices is more uniform.
摘要翻译：一种多状态多层磁存储器件阵列，其中每个存储器件包括非磁性间隔区域（22）和邻近非磁性间隔区域表面定位的自由磁区域（24），所述自由磁性区域区域，其包括多个磁性层（36,34,38），其中位于所述非磁性间隔区域的表面附近的所述多个磁性层中的所述磁性层（36）的厚度基本上大于所述非磁性间隔区域的厚度随后在其上生长的磁性层（34,38），其中选择厚度以改善磁切换变化，使得存储器件阵列中的每个存储器件的磁切换场更均匀。

7. 发明授权

US06946697B2 Synthetic antiferromagnet structures for use in MTJs in MRAM technology 有权
标题翻译：在MRAM技术中用于MTJ的合成反铁磁体结构
公开(公告)号：US06946697B2
公开(公告)日：2005-09-20
申请号：US10740338
申请日：2003-12-18
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
IPC分类号： G11C11/16 , H01L29/76 , H01L31/113 , H01L43/08
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
摘要翻译：在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。该SAF由两个被耦合层隔开的铁磁层组成。耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。优选的基材是钌，优选的其它材料是钽。进一步提高这些优点，在钽和铁磁层之一的界面处加入钴铁。此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。耦合层本身也可以是合金。

8. 发明授权

US06898112B2 Synthetic antiferromagnetic structure for magnetoelectronic devices 失效
标题翻译：用于磁电子器件的合成反铁磁结构
公开(公告)号：US06898112B2
公开(公告)日：2005-05-24
申请号：US10322979
申请日：2002-12-18
申请人： Jason Allen Janesky , Bradley N. Engel , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Jason Allen Janesky , Bradley N. Engel , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： G01R33/09 , G11C11/16 , H01F10/32 , H01F41/30 , G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/12
摘要： A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.
摘要翻译：可以有利地用于诸如磁阻存储器单元的磁电子器件中的几乎平衡的合成反铁磁（SAF）结构包括两个铁磁层和分离两个铁磁层的反铁磁耦合层。 SAF自由层通过诸如退火，反铁磁耦合层的分层或在铁磁层的粗糙表面上形成反铁磁耦合层的处理，在反铁磁耦合层中形成弱耦合区域。与未处理的SAF自由层相比，弱耦合区域降低了SAF自由层的触发场。在这种结构的写入操作期间使用SAF触发器，并且其减少导致在写入操作期间较低的功耗并且相应地增加器件性能。

9. 发明授权

US06831312B2 Amorphous alloys for magnetic devices 有权
标题翻译：用于磁性器件的无定形合金
公开(公告)号：US06831312B2
公开(公告)日：2004-12-14
申请号：US10232164
申请日：2002-08-30
申请人： Jon M. Slaughter , Renu W. Dave , Srinivas V. Pietambaram
发明人： Jon M. Slaughter , Renu W. Dave , Srinivas V. Pietambaram
IPC分类号： H01L31119
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/12431
摘要： An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the various layers in the MTJ stack while also enhancing the magnetic performance of the resulting device. Additionally, the alloys of the present invention are also useful in cladding applications to provide electrical flux containment for signal lines in magnetoelectronic devices and as a material for fabricating write heads.
摘要翻译：公开了一种适用于磁电子器件的钴铁基（CoFe基）磁性合金的非晶层。在本发明的最优选实施例中，在MTJ叠层中提供至少一个非晶层，以增加MTJ叠层中各层的平滑度，同时也提高所得装置的磁性能。此外，本发明的合金还可用于包覆应用中，以提供用于磁电子器件中的信号线的电流容纳以及用作制造写入头的材料。

10. 发明授权

US06801415B2 Nanocrystalline layers for improved MRAM tunnel junctions 有权
公开(公告)号：US06801415B2
公开(公告)日：2004-10-05
申请号：US10232111
申请日：2002-08-30
申请人： Jon M. Slaughter , Renu W. Dave , Jijun Sun
发明人： Jon M. Slaughter , Renu W. Dave , Jijun Sun
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01F41/302 , Y10T29/49044
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element with a crystallographically disordered seed layer and/or template layer seeding the nanocrystalline growth of subsequent layers, including a pinning layer, a pinned layer, and fixed layer.

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