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1. 发明授权

US08497538B2 MRAM synthetic antiferromagnet structure 有权
标题翻译： MRAM合成反铁磁结构
公开(公告)号：US08497538B2
公开(公告)日：2013-07-30
申请号：US11444089
申请日：2006-05-31
申请人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层容易和坚硬的轴。

2. 发明申请

US20070278547A1 MRAM synthetic anitferomagnet structure 有权
标题翻译： MRAM合成非铁磁结构
公开(公告)号：US20070278547A1
公开(公告)日：2007-12-06
申请号：US11444089
申请日：2006-05-31
申请人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu W. Dave , Jason A. Janesky , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高H H k（单轴各向异性）的组合，包括表现出明确定义的高电平触发器的固定磁场来避免钉扎层，高饱和场（饱和磁场），理想的软磁特性表现出明确的容易和硬轴。

3. 发明授权

US07067331B2 Method of making amorphous alloys for semiconductor device 有权
标题翻译：制造半导体器件的非晶合金的方法
公开(公告)号：US07067331B2
公开(公告)日：2006-06-27
申请号：US10980930
申请日：2004-11-03
申请人： Jon M. Slaughter , Renu W. Dave , Srinivas V. Pietambaram
发明人： Jon M. Slaughter , Renu W. Dave , Srinivas V. Pietambaram
IPC分类号： H01L21/00
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/12431
摘要： An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the various layers in the MTJ stack while also enhancing the magnetic performance of the resulting device. Additionally, the alloys of the present invention are also useful in cladding applications to provide electrical flux containment for signal lines in magnetoelectronic devices and as a material for fabricating write heads.
摘要翻译：公开了一种适用于磁电子器件的钴铁基（CoFe基）磁性合金的非晶层。在本发明的最优选实施例中，在MTJ叠层中提供至少一个非晶层，以增加MTJ叠层中各层的平滑度，同时也提高所得装置的磁性能。此外，本发明的合金还可用于包覆应用中，以提供用于磁电子器件中的信号线的电流容纳以及用作制造写入头的材料。

4. 发明授权

US07684161B2 Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence 有权
标题翻译：具有降低温度依赖性的合成反铁磁体结构的方法和装置
公开(公告)号：US07684161B2
公开(公告)日：2010-03-23
申请号：US11406566
申请日：2006-04-18
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , JiJun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , JiJun Sun
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193
摘要： A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer, a first insertion layer, a coupling layer, a second insertion layer, and a second ferromagnetic layer. The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence of antiferromagnetic coupling strength. The insertion layers may include CoFe or CoFeX alloys. The thickness of the insertion layers is selected such that they do not increase the uniaxial anisotropy or deteriorate any other properties.
摘要翻译：合成反铁磁体（SAF）结构包括第一铁磁层，第一插入层，耦合层，第二插入层和第二铁磁层。插入层包括选择的材料，使得SAF显示降低的反铁磁耦合强度的温度依赖性。插入层可以包括CoFe或CoFeX合金。选择插入层的厚度使得它们不增加单轴各向异性或劣化任何其它性质。

5. 发明授权

US07226796B2 Synthetic antiferromagnet structures for use in MTJs in MRAM technology 失效
标题翻译：在MRAM技术中用于MTJ的合成反铁磁体结构
公开(公告)号：US07226796B2
公开(公告)日：2007-06-05
申请号：US11182149
申请日：2005-07-15
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
摘要翻译：在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。该SAF由被耦合层隔开的两个铁磁层组成。耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。优选的基材是钌，优选的其它材料是钽。进一步提高这些优点，在钽和铁磁层之一的界面处加入钴铁。此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。耦合层本身也可以是合金。

6. 发明授权

US06946697B2 Synthetic antiferromagnet structures for use in MTJs in MRAM technology 有权
标题翻译：在MRAM技术中用于MTJ的合成反铁磁体结构
公开(公告)号：US06946697B2
公开(公告)日：2005-09-20
申请号：US10740338
申请日：2003-12-18
申请人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
发明人： Srinivas V. Pietambaram , Renu W. Dave , Jon M. Slaughter , Jijun Sun
IPC分类号： G11C11/16 , H01L29/76 , H01L31/113 , H01L43/08
CPC分类号： G11C11/16 , H01L43/08 , Y10T428/1121
摘要： A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
摘要翻译：在磁阻随机存取存储器（MRAM）中有用的磁隧道结（MTJ）具有作为合成反铁磁体（SAF）结构的自由层。该SAF由两个被耦合层隔开的铁磁层组成。耦合层具有非磁性的基体材料以及改善耐热性，SAF的耦合强度的控制和磁阻比（MR）的其它材料。优选的基材是钌，优选的其它材料是钽。进一步提高这些优点，在钽和铁磁层之一的界面处加入钴铁。此外，耦合层可以具有甚至更多的层，并且所使用的材料可以变化。耦合层本身也可以是合金。

7. 发明授权

US06831312B2 Amorphous alloys for magnetic devices 有权
标题翻译：用于磁性器件的无定形合金
公开(公告)号：US06831312B2
公开(公告)日：2004-12-14
申请号：US10232164
申请日：2002-08-30
申请人： Jon M. Slaughter , Renu W. Dave , Srinivas V. Pietambaram
发明人： Jon M. Slaughter , Renu W. Dave , Srinivas V. Pietambaram
IPC分类号： H01L31119
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F41/302 , H01L43/10 , Y10T428/12431
摘要： An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the various layers in the MTJ stack while also enhancing the magnetic performance of the resulting device. Additionally, the alloys of the present invention are also useful in cladding applications to provide electrical flux containment for signal lines in magnetoelectronic devices and as a material for fabricating write heads.
摘要翻译：公开了一种适用于磁电子器件的钴铁基（CoFe基）磁性合金的非晶层。在本发明的最优选实施例中，在MTJ叠层中提供至少一个非晶层，以增加MTJ叠层中各层的平滑度，同时也提高所得装置的磁性能。此外，本发明的合金还可用于包覆应用中，以提供用于磁电子器件中的信号线的电流容纳以及用作制造写入头的材料。

8. 发明申请

US20090121266A1 METHODS AND STRUCTURES FOR EXCHANGE-COUPLED MAGNETIC MULTI-LAYER STRUCTURE WITH IMPROVED OPERATING TEMPERATURE BEHAVIOR 审中-公开
标题翻译：交替耦合磁性多层结构与改进工作温度行为的方法与结构
公开(公告)号：US20090121266A1
公开(公告)日：2009-05-14
申请号：US11938816
申请日：2007-11-13
申请人： Srinivas V. Pietambaram , Jason A. Janesky , Jon M. Slaughter , Jijun Sun
发明人： Srinivas V. Pietambaram , Jason A. Janesky , Jon M. Slaughter , Jijun Sun
IPC分类号： H01L27/108 , H01L21/02
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/161 , H01F41/303
摘要： Exchange-coupled magnetic multilayer structures for use with toggle MRAM devices and the like include a tunnel barrier layer (108) and a synthetic antiferromagnet (SAF) structure (300) formed on the tunnel barrier layer (108), wherein the SAF (300) includes a plurality (e.g., four or more) of ferromagnetic layers (302, 306, 310, 314) antiferromagnetically or ferromagnetically coupled by a plurality of respective coupling layers (304, 308, 312). The microcrystalline texture of one or more of the ferromagnetic layers is reduced to substantially zero as measured from X-Ray Diffraction by exposure of various layers to oxygen, by forming a detexturing layer, by adding oxygen during the ferromagnetic or coupling layer fabrication, and/or by using amorphous materials.
摘要翻译：用于切换MRAM器件等的交换耦合磁性多层结构包括形成在隧道势垒层（108）上的隧道势垒层（108）和合成反铁磁体（SAF）结构（300），其中SAF（300）包括由多个相应的耦合层（304,308,312）反铁磁或铁磁耦合的多个（例如，四个或更多个）铁磁层（302,306,310,314）。一个或多个铁磁性层的微晶结构由X射线衍射测得的，通过各种氧气暴露于氧，通过在铁磁或耦合层制造过程中加入氧来形成去附着层，和/ 或通过使用无定形材料。

9. 发明授权

US07635902B2 Low power magnetoelectronic device structures utilizing enhanced permeability materials 失效
标题翻译：利用增强的渗透性材料的低功率磁电子器件结构
公开(公告)号：US07635902B2
公开(公告)日：2009-12-22
申请号：US11867189
申请日：2007-10-04
申请人： Nicholas D. Rizzo , Renu Dave , Jon M. Slaughter , Srinivas V. Pietambaram
发明人： Nicholas D. Rizzo , Renu Dave , Jon M. Slaughter , Srinivas V. Pietambaram
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/838 , Y10S977/933
摘要： Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure (100) comprises a programming line (104), a magnetoelectronic device (102) magnetically coupled to the programming line, and an enhanced permeability dielectric material (106) disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5.A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device (102) and depositing a conducting line (104). A layer of enhanced permeability dielectric material (106) having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.
摘要翻译：提供了低功率磁电子器件结构及其制造方法。一个磁电子器件结构（100）包括编程线（104），磁耦合到编程线的磁电子器件（102）和邻近磁电子器件设置的增强的磁导率介电材料（106）。增强的导电介电材料具有不小于约1.5的渗透性。还提供了一种制造磁电子器件结构的方法。该方法包括制造磁电子器件（102）并沉积导线（104）。形成具有不小于约1.5的磁导率的增强磁导率介电材料层（106），其中在制造磁电子器件的步骤和沉积导线的步骤之后，增强磁导率介电材料层位于磁电子器件。

10. 发明授权

US07683445B2 Enhanced permeability device structures and method 失效
标题翻译：增强渗透性装置结构和方法
公开(公告)号：US07683445B2
公开(公告)日：2010-03-23
申请号：US11740066
申请日：2007-04-25
申请人： Srinivas V. Pietambaram , Nicholas D. Rizzo , Jon M. Slaughter
发明人： Srinivas V. Pietambaram , Nicholas D. Rizzo , Jon M. Slaughter
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/838 , Y10S977/933
摘要： Low power magnetoelectronic device structures and methods therefore are provided. The magnetoelectronic device structure (100, 150, 450, 451) comprises a programming line (104, 154, 156, 454, 456), a magnetoelectronic device (102, 152, 452) magnetically coupled to the programming line (104, 154, 156, 454, 456), and an enhanced permeability dielectric (EPD) material (106, 108, 110, 158, 160, 162, 458, 460, 462) disposed adjacent the magnetoelectronic device. The EPD material (106, 108, 110, 158, 160, 162, 458, 460, 462) comprises multiple composite layers (408) of magnetic nano-particles (406) embedded in a dielectric matrix (409). The composition of the composite layers is chosen to provide a predetermined permeability profile. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating the magnetoelectronic device (102, 152, 452) and depositing the programming line (104, 154, 156, 454, 456). The EPD material (106, 108, 110, 158, 160, 162, 458, 460, 462) comprising the multiple composite layers (408) is formed around the magnetoelectronic device (102, 152, 452) and/or between the device (102, 152, 452) and the programming line (104, 154, 156, 454, 456). The presence of the EPD structure (470, 480, 490) in proximity to the programming line (104, 154, 156, 454, 456) and/or the magnetoelectronic device (102, 152, 452) reduces the required programming current.
摘要翻译：因此提供了低功率磁电子器件结构和方法。磁电子器件结构（100,150,450,451）包括编程线（104,154,156,454,456），磁耦合到编程线（104,154,452）的磁电子器件（102,152,452） 156,454,456）以及邻近磁电子器件设置的增强磁导率电介质（EPD）材料（106,108,110,158,160,162,458,460,462）。 EPD材料（106,108,110,158,160,162,458,460,462）包括嵌入电介质矩阵（409）中的磁性纳米颗粒（406）的多个复合层（408）。选择复合层的组成以提供预定的渗透率分布。还提供了一种制造磁电子器件结构的方法。该方法包括制造磁电子器件（102,152,452）并沉积编程线（104,154,156,454,456）。包括多个复合层（408）的EPD材料（106,108,110,158,160,162,458,460,462）形成在磁电子器件（102,152,452）周围和/或在器件（ 102，152,452）和编程线（104,154,156,454,465）。靠近编程线（104,154,156,454,465）和/或磁电子器件（102,152,452）的EPD结构（470,480,490）的存在减少了所需的编程电流。

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