会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Method and system for decoding a row address to assert multiple adjacent rows in a memory structure
    • 用于解码行地址以在存储器结构中断言多个相邻行的方法和系统
    • US06711664B1
    • 2004-03-23
    • US09660721
    • 2000-09-13
    • Spencer M. GoldJason Eisenberg
    • Spencer M. GoldJason Eisenberg
    • G06F1200
    • G11C8/12
    • A memory array or structure and method for decoding a read address to facilitate simultaneous reading of successive rows. The memory includes row decoders in the form of decoding logic for enabling multiple rows of the memory structure to be read in response to a single row address. The memory structure helps to reduce the number of ports that are required for the memory structure and, thus, reduces the die area occupied by the memory structure. The row address may be divided into most significant bits and least significant bits. Further, the decoding logic may decode the most significant bits differently from the least significant bits when processing the row address. The most significant bits may be preprocessed or predecoded into a fully decoded format while the least significant bits may be decoded into a priority decoded format.
    • 一种用于对读取地址进行解码以便于同时读取连续行的存储器阵列或结构和方法。 存储器包括解码逻辑形式的行解码器,用于响应于单个行地址来读取存储器结构的多行。 存储器结构有助于减少存储器结构所需的端口数量,从而减少存储器结构占用的管芯面积。 行地址可以被分成最高有效位和最低有效位。 此外,当处理行地址时,解码逻辑可以与最低有效位不同地解码最高有效位。 最高有效位可以被预处理或预解码成完全解码格式,而最低有效位可被解码为优先解码格式。
    • 4. 发明授权
    • Providing test coverage of integrated ECC logic en embedded memory
    • 提供嵌入式内存的集成ECC逻辑的测试覆盖
    • US08914687B2
    • 2014-12-16
    • US13087808
    • 2011-04-15
    • Spencer M. GoldArun B. Hegde
    • Spencer M. GoldArun B. Hegde
    • G11C29/00G06F11/10G11C29/02G06F11/22G11C29/04
    • G06F11/2215G06F11/1052G06F2217/70G11C29/02G11C2029/0411
    • A method is provided in which a first error test may be performed on a memory that includes an integrated error correcting code (ECC) portion. The functionality of the ECC portion may be bypassed in the first error test. A second error test may be performed on the memory, where the second error test includes testing the functionality of the ECC portion. Also provided is an apparatus including a memory device and an error correcting code (ECC) circuit. The apparatus also includes a first switching device adapted to select a first input signal or a second input signal and a second switching device adapted to select one of a signal from the memory device or a signal from a portion of the ECC circuit. Also provided are computer readable storage devices encoded with data for adapting a manufacturing facility to create the apparatus and for adapting a processor to perform the method above.
    • 提供了一种方法,其中可以对包括集成纠错码(ECC)部分的存储器执行第一错误测试。 在第一个错误测试中可以绕过ECC部分的功能。 可以对存储器执行第二错误测试,其中第二错误测试包括测试ECC部分的功能。 还提供了一种包括存储器件和纠错码(ECC)电路的装置。 该装置还包括适于选择第一输入信号或第二输入信号的第一开关装置和适于从存储装置选择信号之一或来自ECC电路的一部分的信号的第二开关装置。 还提供了用数据编码的计算机可读存储设备,用于使制造设施适配以创建设备并使调适处理器执行上述方法。
    • 7. 发明授权
    • Bit-flipping in memories
    • 记忆中的位翻转
    • US09047981B2
    • 2015-06-02
    • US13724924
    • 2012-12-21
    • Arun B. HegdeSpencer M. GoldThomas E. Ryan
    • Arun B. HegdeSpencer M. GoldThomas E. Ryan
    • G11C7/04G11C11/419
    • G11C11/419G11C7/04G11C11/417
    • Data stored in SRAM cells are periodically flipped e.g., before long idle periods. Operating the memories in both a ‘flipped’ mode and a ‘non-flipped’ mode helps cause the Bias Temperature Instability (BTI) degradation to be symmetric, thereby not degrading the Static Noise Margin (SNM) degradation of the cells. The data stored in memory locations is flipped by reading out the data, inverting the read out data, and writing the inverted read out data into the memory locations until the memory locations of the SRAM have been read out and written. When the memory operates in flipped mode, data read from and written into the memory is inverted to maintain transparency to the memory user. After operating the data in flipped mode for a period of time, the flipped data stored in the memory is reflipped to operate in the non-flipped mode.
    • 存储在SRAM单元中的数据例如在长时间的空闲周期之前被周期性翻转。 以“翻转”模式和“非翻转”模式操作存储器有助于使偏置温度不稳定(BTI)劣化成对称,从而不会降低单元的静态噪声余量(SNM)降级。 存储在存储单元中的数据通过读出数据,反转读出数据以及将反相读出数据写入到存储器位置来翻转,直到SRAM的存储器位置被读出和写入。 当存储器以翻转模式操作时,从存储器读取和写入存储器的数据被反转以保持对存储器用户的透明度。 在经过一段时间的翻转模式下操作数据之后,将存储在存储器中的翻转数据重新提供以非翻转模式操作。
    • 10. 发明申请
    • PROVIDING TEST COVERAGE OF INTEGRATED ECC LOGIC EN EMBEDDED MEMORY
    • 提供集成ECC逻辑嵌入式存储器的测试覆盖
    • US20120266033A1
    • 2012-10-18
    • US13087808
    • 2011-04-15
    • Spencer M. GoldArun B. Hegde
    • Spencer M. GoldArun B. Hegde
    • G06F11/00G06F17/50
    • G06F11/2215G06F11/1052G06F2217/70G11C29/02G11C2029/0411
    • A method is provided in which a first error test may be performed on a memory that includes an integrated error correcting code (ECC) portion. The functionality of the ECC portion may be bypassed in the first error test. A second error test may be performed on the memory, where the second error test includes testing the functionality of the ECC portion. Also provided is an apparatus including a memory device and an error correcting code (ECC) circuit. The apparatus also includes a first switching device adapted to select a first input signal or a second input signal and a second switching device adapted to select one of a signal from the memory device or a signal from a portion of the ECC circuit. Also provided are computer readable storage devices encoded with data for adapting a manufacturing facility to create the apparatus and for adapting a processor to perform the method above.
    • 提供了一种方法,其中可以对包括集成纠错码(ECC)部分的存储器执行第一错误测试。 在第一个错误测试中可以绕过ECC部分的功能。 可以对存储器执行第二错误测试,其中第二错误测试包括测试ECC部分的功能。 还提供了一种包括存储器件和纠错码(ECC)电路的装置。 该装置还包括适于选择第一输入信号或第二输入信号的第一开关装置和适于从存储装置选择信号之一或来自ECC电路的一部分的信号的第二开关装置。 还提供了用数据编码的计算机可读存储设备,用于使制造设施适配以创建设备并使调适处理器执行上述方法。