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1. 发明申请

US20130269732A1 SYSTEM FOR DELIVERY OF PURIFIED MULTIPLE PHASES OF CARBON DIOXIDE TO A PROCESS TOOL 审中-公开
标题翻译：将二氧化碳的纯化多相物质输送到工艺工具的系统
公开(公告)号：US20130269732A1
公开(公告)日：2013-10-17
申请号：US13862709
申请日：2013-04-15
申请人： Souvik Banerjee , William R. Gerristead, Jr.
发明人： Souvik Banerjee , William R. Gerristead, Jr.
IPC分类号： B08B3/08
CPC分类号： B08B3/08 , B08B7/0021 , H01L21/67051
摘要： A carbon dioxide supply method and system for supplying supercritical and subcritical phases of carbon dioxide on-demand to a substrate to create a novel and improved cleaning sequence for removal of contaminants contained in the substrate. The ability for the supply system to deliver vapor, liquid and supercritical phases of carbon dioxide in a specific sequence at predetermined times during a process cleaning sequence produces an improved removal of contaminants from the substrate compared to conventional carbon dioxide cleaning processes.
摘要翻译：一种二氧化碳供应方法和系统，用于将二氧化碳的超临界和亚临界相位提供给基板，以产生用于去除基材中所含污染物的新颖且改进的清洗顺序。在常规二氧化碳清洗过程中，供应系统能够在工艺清洗程序中的预定时间内以特定顺序递送二氧化碳的蒸汽，液体和超临界相的能力，从而提高了与基材相比污染物的去除效果。

2. 发明申请

US20090126760A1 SYSTEM FOR CLEANING A SURFACE USING CROGENIC AEROSOL AND FLUID REACTANT 审中-公开
标题翻译：使用碳酸氢钠和流体防除剂清洁表面的系统
公开(公告)号：US20090126760A1
公开(公告)日：2009-05-21
申请号：US11793647
申请日：2005-04-19
申请人： Souvik Banerjee , Ramesh B. Borade , Werner Brandt
发明人： Souvik Banerjee , Ramesh B. Borade , Werner Brandt
IPC分类号： B08B3/10
CPC分类号： B08B3/02 , B08B7/0092 , H01L21/02057 , H01L21/67051 , H01L21/67161 , H01L21/67207 , H01L21/67745
摘要： An apparatus and method are provided to treat for example a semiconductor wafer substrate wherein a delivery means for heat, a cryogen, and a fluid chemical reactant, is disposed in a chamber in which the substrate is disposed for at least one surface of the substrate to be cleaned in the chamber. The chamber may also consist of a plurality of stations for chemically treating, providing cryogen to the substrate to effect such cleaning and heating. Air is provided in the chamber in a laminar flow substantially parallel to the surface being treated to remove displaced material from the surface and prevent redeposition of the material on the substrate surface.
摘要翻译：提供了一种设备和方法来处理例如半导体晶片衬底，其中用于加热的输送装置，制冷剂和流体化学反应物被设置在其中衬底被设置用于衬底的至少一个表面的腔室中在室内清洁。该室还可以由用于化学处理的多个站组成，向基板提供冷冻剂以实现这种清洁和加热。空气以基本上平行于待处理的表面的层流提供在腔室中以从表面移除移位的材料并防止材料在基底表面上的再沉积。

3. 发明申请

US20070089761A1 Non-plasma method of removing photoresist from a substrate 审中-公开
标题翻译：从基板去除光致抗蚀剂的非等离子体方法
公开(公告)号：US20070089761A1
公开(公告)日：2007-04-26
申请号：US11255695
申请日：2005-10-21
申请人： Souvik Banerjee , Ramesh Borade , Srini Raghavan , Peggi Cross
发明人： Souvik Banerjee , Ramesh Borade , Srini Raghavan , Peggi Cross
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： G03F7/422 , B08B3/02 , B08B7/0071 , B08B7/0092 , B08B7/02 , B24C1/003 , H01L21/02057 , H01L21/31127 , H01L21/31138
摘要： A method is provided to remove in particular ion implanted photoresist from a substrate, such as a semiconductor wafer, consisting of heating the photoresist for deforming an interface of a crust and bulk layer of the photoresist, and controlling a temperature of the heating for cracking the photoresist.
摘要翻译：提供了一种方法来从衬底（例如半导体晶片）中去除特别是离子注入的光致抗蚀剂，其包括加热光致抗蚀剂以使光致抗蚀剂的外壳和本体层的界面变形，以及控制用于裂化的加热温度光刻胶。

4. 发明授权

US06848458B1 Apparatus and methods for processing semiconductor substrates using supercritical fluids 失效
标题翻译：使用超临界流体处理半导体衬底的装置和方法
公开(公告)号：US06848458B1
公开(公告)日：2005-02-01
申请号：US10067520
申请日：2002-02-05
申请人： Krishnan Shrinivasan , Souvik Banerjee , Francisco Juarez , Karen A. Reinhardt , Sanjay Gopinath
发明人： Krishnan Shrinivasan , Souvik Banerjee , Francisco Juarez , Karen A. Reinhardt , Sanjay Gopinath
IPC分类号： B08B7/00 , H01L21/00 , B08B3/00
CPC分类号： H01L21/67057 , B08B7/0021 , Y10S134/902
摘要： The present invention pertains to a system for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems, as well as methods for implementing wafer cleaning using such a system. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity. A depressurization system provides dilution and removal of cleaning solutions under supercritical conditions. A recapture-recycle system introduces captured-purified solvents into the solvent delivery mechanism.
摘要翻译：本发明涉及用于清洁晶片的系统，其包括专门的加压，处理容器，再循环，化学添加，减压和再捕集循环子系统，以及使用这种系统实现晶片清洗的方法。溶剂递送机构将液态亚临界溶液转化为超临界清洗溶液并将其引入含有晶片或晶片的处理容器中。超临界清洗溶液通过再循环系统再循环通过处理容器。添加剂输送系统通过溶剂输送机构，处理容器或再循环系统将化学添加剂引入超临界清洗溶液。也可以向亚临界溶液中添加化学添加剂。再循环系统提供化学添加剂的有效混合，高效的清洗和工艺的均匀性。减压系统在超临界条件下提供清洗溶液的稀释和去除。回收再循环系统将捕获的纯化溶剂引入溶剂输送机构。

5. 发明授权

US07056391B2 Liquid-assisted cryogenic cleaning 有权
公开(公告)号：US07056391B2
公开(公告)日：2006-06-06
申请号：US10886251
申请日：2004-07-07
申请人： Souvik Banerjee , Harlan Forrest Chung
发明人： Souvik Banerjee , Harlan Forrest Chung
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , B08B3/04 , B08B7/0092 , B24C1/003 , C23G5/00 , H01L21/67051
摘要： The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below −50° C.

6. 发明申请

US20050217706A1 Fluid assisted cryogenic cleaning 审中-公开
标题翻译：流体辅助低温清洗
公开(公告)号：US20050217706A1
公开(公告)日：2005-10-06
申请号：US10509955
申请日：2003-04-03
申请人： Souvik Banerjee , Harlan Chung
发明人： Souvik Banerjee , Harlan Chung
IPC分类号： B08B3/12 , B08B7/00 , H01L21/02
CPC分类号： H01L21/02063 , B08B7/0092
摘要： The present invention is directed to fluid assisted cryogenic cleaning of a substrate surface requiring precision cleaning such as semiconductors, metals, and dielectric films. The process comprises the steps of applying a fluid selected from the group consisting of high vapor pressure liquids, reactive gases, and vapors of reactive liquids onto the substrate surface followed by or simultaneously with cryogenic cleaning of the substrate surface to remove contaminants.
摘要翻译：本发明涉及要求精密清洗的衬底表面的液体辅助低温清洁，例如半导体，金属和电介质膜。该方法包括以下步骤：将选自高蒸气压液体，反应性气体和反应性液体蒸气的流体施加到基底表面上，随后或同时对基底表面进行低温清洁以除去污染物。

7. 发明授权

US06852173B2 Liquid-assisted cryogenic cleaning 有权
标题翻译：液体辅助低温清洗
公开(公告)号：US06852173B2
公开(公告)日：2005-02-08
申请号：US10324221
申请日：2002-12-19
申请人： Souvik Banerjee , Harlan Forrest Chung
发明人： Souvik Banerjee , Harlan Forrest Chung
IPC分类号： B08B3/04 , B08B7/00 , B24C1/00 , C23G5/00 , H01L21/00 , H01L21/306 , B08B3/00
CPC分类号： H01L21/02052 , B08B3/04 , B08B7/0092 , B24C1/003 , C23G5/00 , H01L21/67051
摘要： The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below −50° C.
摘要翻译：本发明涉及在低温清洗之前或同时进行高蒸气压液体的使用，以从需要精密清洗的基板表面去除污染物，例如半导体，金属膜或电介质膜。适用于本发明的液体优选具有高于5kPa的蒸气压和低于-50℃的凝固点。

8. 发明授权

US06800142B1 Method for removing photoresist and post-etch residue using activated peroxide followed by supercritical fluid treatment 失效
标题翻译：使用活化的过氧化物，然后超临界流体处理去除光致抗蚀剂和蚀刻后残留物的方法
公开(公告)号：US06800142B1
公开(公告)日：2004-10-05
申请号：US10159951
申请日：2002-05-30
申请人： Adrianne Kay Tipton , Krishnan Shrinivasan , Souvik Banerjee , Raashina Humayun , Patrick Christopher Joyce
发明人： Adrianne Kay Tipton , Krishnan Shrinivasan , Souvik Banerjee , Raashina Humayun , Patrick Christopher Joyce
IPC分类号： B08B300
CPC分类号： H01L21/02101 , B08B3/08 , B08B7/0021 , B08B7/0057 , B08B7/04 , B08B2203/005 , C11D3/3947 , C11D11/0047 , G03F7/423 , G03F7/427 , H01L21/02063 , H01L21/31133 , Y10S438/906
摘要： Methods for cleaning semiconductor wafers are presented. Contaminants, particularly photoresist and post-etch residue, are removed from semiconductor wafers. A wafer or wafers is first treated with a peroxide-containing medium, for example, to oxidatively cleave bond structures of contaminants on the wafer work surface. Excitation energy is used to activate the peroxide-containing medium toward the formation of radical species. After treatment with the peroxide-containing medium, a supercritical fluid treatment is used to remove any remaining contaminants as well as to condition the wafer for subsequent processing.
摘要翻译：介绍了半导体晶圆清洗方法。从半导体晶片去除污染物，特别是光致抗蚀剂和蚀刻后残留物。首先用含过氧化物的介质处理晶片或晶片，例如氧化劈裂晶片工作表面上的污染物的结合结构。激发能量用于激活含过氧化物的介质以形成自由基物质。用含过氧化物的培养基处理后，使用超临界流体处理来除去任何剩余的污染物，以及调整晶片以用于随后的处理。

9. 发明授权

US06905556B1 Method and apparatus for using surfactants in supercritical fluid processing of wafers 失效
标题翻译：在晶圆超临界流体处理中使用表面活性剂的方法和装置
公开(公告)号：US06905556B1
公开(公告)日：2005-06-14
申请号：US10306677
申请日：2002-11-27
申请人： Raashina Humayun , Patrick C. Joyce , Adrianne Kay Tipton , Krishnan Shrinivasan , Dennis W. Hess , Satyanarayana Myneni , Souvik Banerjee
发明人： Raashina Humayun , Patrick C. Joyce , Adrianne Kay Tipton , Krishnan Shrinivasan , Dennis W. Hess , Satyanarayana Myneni , Souvik Banerjee
IPC分类号： B08B7/00 , C11D7/02 , C11D7/12 , C11D11/00 , H01L21/306 , H01L21/311 , B08B3/00
CPC分类号： H01L21/02101 , B08B7/0021 , C11D7/02 , C11D7/12 , C11D11/0047 , H01L21/02063 , H01L21/31116 , H01L21/31133
摘要： A method of delivering a reagent to a wafer is provided. A solvent is provided. A set of conditions of temperature and pressure is provided to the solvent, which is sufficient to bring the solvent to supercritical conditions. A reagent is provided. A surfactant is provided, where the surfactant has a first moiety with an affinity for the solvent and a second moiety with an affinity for the reagent, where the surfactant increases the concentration of the reagent that may be carried by the solvent. The solvent, surfactant, and reagent are combined to form a solution. The solution is delivered to a supercritical process chamber, wherein a wafer is exposed to the solution in the process chamber.
摘要翻译：提供了将试剂递送到晶片的方法。提供溶剂。向溶剂提供一组温度和压力的条件，这足以使溶剂达到超临界条件。提供试剂。提供了表面活性剂，其中表面活性剂具有对溶剂具有亲和性的第一部分和对试剂具有亲和力的第二部分，其中表面活性剂增加可由溶剂承载的试剂的浓度。溶剂，表面活性剂和试剂组合形成溶液。将溶液输送到超临界处理室，其中晶片暴露于处理室中的溶液。

10. 发明授权

US07503334B1 Apparatus and methods for processing semiconductor substrates using supercritical fluids 有权
标题翻译：使用超临界流体处理半导体衬底的装置和方法
公开(公告)号：US07503334B1
公开(公告)日：2009-03-17
申请号：US11031371
申请日：2005-01-06
申请人： Krishnan Shrinivasan , Souvik Banerjee , Francisco Juarez , Karen A. Reinhardt , Sanjay Gopinath
发明人： Krishnan Shrinivasan , Souvik Banerjee , Francisco Juarez , Karen A. Reinhardt , Sanjay Gopinath
IPC分类号： B08B3/00 , B08B3/14
CPC分类号： H01L21/67057 , B08B7/0021 , Y10S134/902
摘要： A system is provided for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity. A depressurization system provides dilution and removal of cleaning solutions under supercritical conditions. A recapture-recycle system introduces captured-purified solvents into the solvent delivery mechanism.
摘要翻译：提供了一种用于清洁晶片的系统，其包括专门的加压，处理容器，再循环，化学添加，减压和再捕集循环子系统。溶剂递送机构将液态亚临界溶液转化为超临界清洗溶液并将其引入含有晶片或晶片的处理容器中。超临界清洗溶液通过再循环系统再循环通过处理容器。添加剂输送系统通过溶剂输送机构，处理容器或再循环系统将化学添加剂引入超临界清洗溶液。也可以向亚临界溶液中添加化学添加剂。再循环系统提供化学添加剂的有效混合，高效的清洗和工艺的均匀性。减压系统在超临界条件下提供清洗溶液的稀释和去除。回收再循环系统将捕获的纯化溶剂引入溶剂输送机构。

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