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1. 发明申请

US20120288992A1 Germanium Photodetector 有权
标题翻译：锗光检测器
公开(公告)号：US20120288992A1
公开(公告)日：2012-11-15
申请号：US13556597
申请日：2012-07-24
申请人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
发明人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
IPC分类号： H01L31/18
CPC分类号： H01L31/1808 , H01L31/1085 , Y02E10/50
摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
摘要翻译：一种形成光检测器件的方法包括：在基片上形成绝缘体层，在绝缘体层和一部分基底上形成锗（Ge）层，在Ge层上形成第二绝缘层，构图Ge层，形成在所述第二绝缘体层上的封盖绝缘体层和所述第一绝缘体层的一部分，加热所述器件以使所述Ge层结晶，得到单晶Ge层，在所述单晶Ge层中注入n型离子，将所述器件加热至在单晶Ge层中激活n型离子，以及形成电连接到单晶n型Ge层的电极。

2. 发明授权

US08304272B2 Germanium photodetector 有权
标题翻译：锗光电探测器
公开(公告)号：US08304272B2
公开(公告)日：2012-11-06
申请号：US13024724
申请日：2011-02-10
申请人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
发明人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L31/1085 , Y02E10/50
摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
摘要翻译：一种形成光检测器件的方法包括在基片上形成绝缘体层，在绝缘体层和基片的一部分上形成锗（Ge）层，在Ge层上形成第二绝缘体层，将n型离子注入 Ge层，图案化n型Ge层，在第二绝缘体层上形成覆盖绝缘体层和第一绝缘体层的一部分，加热该器件以使Ge层结晶，得到单晶n型Ge层，以及形成电连接到单晶n型Ge层的电极。

3. 发明申请

US20120001283A1 Germanium Photodetector 有权
标题翻译：锗光检测器
公开(公告)号：US20120001283A1
公开(公告)日：2012-01-05
申请号：US13024724
申请日：2011-02-10
申请人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
发明人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
IPC分类号： H01L31/028 , H01L31/18
CPC分类号： H01L31/1808 , H01L31/1085 , Y02E10/50
摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
摘要翻译：一种形成光检测器件的方法包括在基片上形成绝缘体层，在绝缘体层和基片的一部分上形成锗（Ge）层，在Ge层上形成第二绝缘体层，将n型离子注入 Ge层，图案化n型Ge层，在第二绝缘体层上形成覆盖绝缘体层和第一绝缘体层的一部分，加热该器件以使Ge层结晶，得到单晶n型Ge层，以及形成电连接到单晶n型Ge层的电极。

4. 发明授权

US08614116B2 Germanium photodetector 有权
标题翻译：锗光电探测器
公开(公告)号：US08614116B2
公开(公告)日：2013-12-24
申请号：US13556597
申请日：2012-07-24
申请人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
发明人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L31/1085 , Y02E10/50
摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
摘要翻译：一种形成光检测器件的方法包括：在基片上形成绝缘体层，在绝缘体层和一部分基底上形成锗（Ge）层，在Ge层上形成第二绝缘层，构图Ge层，形成在所述第二绝缘体层上的封盖绝缘体层和所述第一绝缘体层的一部分，加热所述器件以使所述Ge层结晶，得到单晶Ge层，在所述单晶Ge层中注入n型离子，将所述器件加热至在单晶Ge层中激活n型离子，以及形成电连接到单晶n型Ge层的电极。

5. 发明授权

US08536043B2 Reduced S/D contact resistance of III-V MOSFET using low temperature metal-induced crystallization of n+ Ge 有权
标题翻译：使用n + Ge的低温金属诱导结晶降低了III-V MOSFET的S / D接触电阻
公开(公告)号：US08536043B2
公开(公告)日：2013-09-17
申请号：US13017127
申请日：2011-01-31
申请人： Jeehwan Kim , Jin-Hong Park , Devendra Sadana , Kuen-Ting Shiu
发明人： Jeehwan Kim , Jin-Hong Park , Devendra Sadana , Kuen-Ting Shiu
IPC分类号： H01L21/28
CPC分类号： H01L29/20 , H01L21/26513 , H01L21/28575 , H01L29/0847 , H01L29/267 , H01L29/41783 , H01L29/452 , H01L29/66522 , H01L29/66628 , H01L29/78
摘要： Embodiments of this invention provide a method to fabricate an electrical contact. The method includes providing a substrate of a compound Group III-V semiconductor material having at least one electrically conducting doped region adjacent to a surface of the substrate. The method further includes fabricating the electrical contact to the at least one electrically conducting doped region by depositing a single crystal layer of germanium over the surface of the substrate so as to at least partially overlie the at least one electrically conducting doped region, converting the single crystal layer of germanium into a layer of amorphous germanium by implanting a dopant, forming a metal layer over exposed surfaces of the amorphous germanium layer, and performing a metal-induced crystallization (MIC) process on the amorphous germanium layer having the overlying metal layer to convert the amorphous germanium layer to a crystalline germanium layer and to activate the implanted dopant. The electrical contact can be a source or a drain contact of a transistor.
摘要翻译：本发明的实施例提供一种制造电接触的方法。该方法包括提供化合物III-V族半导体材料的衬底，其具有与衬底的表面相邻的至少一个导电掺杂区域。该方法还包括通过在衬底的表面上沉积锗的单晶层以至少部分地覆盖在至少一个导电掺杂区域上来将至少一个导电掺杂区域的电接触制造到该至少一个导电掺杂区域，通过注入掺杂剂，在非晶锗层的暴露表面上形成金属层，并对具有上覆金属层的非晶锗层进行金属诱导结晶（MIC）工艺，将锗的晶体层分解成无定形锗层，将无定形锗层转化为结晶锗层并激活注入的掺杂剂。电接触可以是晶体管的源极或漏极接触。

6. 发明申请

US20120193687A1 REDUCED S/D CONTACT RESISTANCE OF III-V MOSFET USING LOW TEMPERATURE METAL-INDUCED CRYSTALLIZATION OF n+ Ge 有权
标题翻译：使用n + Ge低温金属诱导结晶的III-V MOSFET的降低的S / D接触电阻
公开(公告)号：US20120193687A1
公开(公告)日：2012-08-02
申请号：US13017127
申请日：2011-01-31
申请人： Jeehwan Kim , Jin-Hong Park , Devendra Sadana , Kuen-Ting Shiu
发明人： Jeehwan Kim , Jin-Hong Park , Devendra Sadana , Kuen-Ting Shiu
IPC分类号： H01L29/772 , H01L21/28
CPC分类号： H01L29/20 , H01L21/26513 , H01L21/28575 , H01L29/0847 , H01L29/267 , H01L29/41783 , H01L29/452 , H01L29/66522 , H01L29/66628 , H01L29/78
摘要： Embodiments of this invention provide a method to fabricate an electrical contact. The method includes providing a substrate of a compound Group III-V semiconductor material having at least one electrically conducting doped region adjacent to a surface of the substrate. The method further includes fabricating the electrical contact to the at least one electrically conducting doped region by depositing a single crystal layer of germanium over the surface of the substrate so as to at least partially overlie the at least one electrically conducting doped region, converting the single crystal layer of germanium into a layer of amorphous germanium by implanting a dopant, forming a metal layer over exposed surfaces of the amorphous germanium layer, and performing a metal-induced crystallization (MIC) process on the amorphous germanium layer having the overlying metal layer to convert the amorphous germanium layer to a crystalline germanium layer and to activate the implanted dopant. The electrical contact can be a source or a drain contact of a transistor.
摘要翻译：本发明的实施例提供一种制造电接触的方法。该方法包括提供化合物III-V族半导体材料的衬底，其具有与衬底的表面相邻的至少一个导电掺杂区域。该方法还包括通过在衬底的表面上沉积锗的单晶层以至少部分地覆盖在至少一个导电掺杂区域上来将至少一个导电掺杂区域的电接触制造到该至少一个导电掺杂区域，通过注入掺杂剂，在非晶锗层的暴露表面上形成金属层，并对具有上层金属层的非晶锗层进行金属诱导结晶（MIC）工艺，将锗的晶体层分解成无定形锗层，将无定形锗层转化为结晶锗层并激活注入的掺杂剂。电接触可以是晶体管的源极或漏极接触。

7. 发明授权

US10319872B2 Cost-efficient high power PECVD deposition for solar cells 有权
公开(公告)号：US10319872B2
公开(公告)日：2019-06-11
申请号：US13468292
申请日：2012-05-10
申请人： Tze-Chiang Chen , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana
发明人： Tze-Chiang Chen , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana
IPC分类号： H01L31/076 , H01L31/077 , C23C16/50 , H01L31/20 , H01L21/02 , C23C16/02 , H01L31/0216 , H01L31/0368 , H01L31/0376 , H01L31/0392 , C23C16/455 , C23C16/515 , H01L31/0224 , H01L31/065 , H01L31/18 , H01L31/056
摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

8. 发明授权

US08878055B2 Efficient nanoscale solar cell and fabrication method 有权
标题翻译：高效纳米级太阳能电池及其制造方法
公开(公告)号：US08878055B2
公开(公告)日：2014-11-04
申请号：US12852991
申请日：2010-08-09
申请人： Keith E. Fogel , William S. Graham , Jeehwan Kim , Harold J. Hovel , Devendra K. Sadana , Katherine L. Saenger
发明人： Keith E. Fogel , William S. Graham , Jeehwan Kim , Harold J. Hovel , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L31/00 , H01L31/052 , H01L31/0236 , H01L31/0352
CPC分类号： H01L31/0527 , H01L31/02366 , H01L31/03529 , H01L31/056 , Y02E10/52
摘要： A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.
摘要翻译：光电器件和方法包括具有多个结构的衬底层，包括形成在其中的峰和谷。连续的光伏堆叠保形地形成在衬底层上并且延伸超过峰和谷。光伏堆叠具有小于1微米的厚度，并且被配置为将入射辐射转换成电流。

9. 发明授权

US08828504B2 Deposition of hydrogenated thin film 有权
标题翻译：沉积氢化薄膜
公开(公告)号：US08828504B2
公开(公告)日：2014-09-09
申请号：US12971243
申请日：2010-12-17
申请人： Osama Tobail , Ahmed Abou-Kandil , Mostafa M. El-Ashry , Jeehwan Kim , Paul M. Kozlowski , Mohamed Saad , Devendra K. Sadana
发明人： Osama Tobail , Ahmed Abou-Kandil , Mostafa M. El-Ashry , Jeehwan Kim , Paul M. Kozlowski , Mohamed Saad , Devendra K. Sadana
IPC分类号： C23C14/00 , C23C16/455 , C23C16/50 , H01L21/02 , C23C14/14 , C23C14/22
CPC分类号： C23C14/0021 , C23C14/14 , C23C14/22 , C23C16/45514 , C23C16/50 , H01L21/02123 , H01L21/02274
摘要： A hydrogenated thin film is formed in a controlled vacuum on a substrate by evaporating one or more solid materials and passing the resulting vapor and a hydrogen-containing gas into a space between two electrodes. One of the electrodes includes openings for allowing the vapor to enter the space. Plasma is generated within the space to cause dissociation of the hydrogen-containing gas and promote a reaction between the material(s) and hydrogen-containing gas.
摘要翻译：通过蒸发一种或多种固体材料并使得到的蒸气和含氢气体进入两个电极之间的空间，在受控真空中在基板上形成氢化薄膜。电极之一包括允许蒸汽进入空间的开口。在空间内产生等离子体以引起含氢气体的解离并促进材料和含氢气体之间的反应。

10. 发明申请

US20130092214A1 EFFICIENCY RESTORATION IN A PHOTOVOLTAIC CELL 审中-公开
标题翻译：光伏电池中的有效恢复
公开(公告)号：US20130092214A1
公开(公告)日：2013-04-18
申请号：US13607679
申请日：2012-09-08
申请人： Young T. Chae , Augustin J. Hong , Jeehwan Kim , Young M. Lee , Devendra K. Sadana
发明人： Young T. Chae , Augustin J. Hong , Jeehwan Kim , Young M. Lee , Devendra K. Sadana
IPC分类号： H01L31/058
CPC分类号： H01L31/056 , F24S80/50 , F28F1/32 , H01L31/03767 , H02S40/44 , Y02E10/50 , Y02E10/60
摘要： The electrical output efficiency of a photovoltaic thermal system can be restored from degradation due to light exposure by annealing a photovoltaic thermal cell at an elevated temperature. The elevated temperature at the photovoltaic thermal cell can be provided by redirecting the flow of a heat exchange fluid to bypass a heat exchanger unit. A boiler unit may be employed to provide additional heating of the heat exchange fluid during the anneal. Further, a variable configuration lid can be provided over a front surface of the photovoltaic thermal cell to control ventilation over the front surface. During the anneal, the position of the variable configuration lid can be set so as to trap heat above the front surface and to elevate the anneal temperature further.
摘要翻译：光伏热系统的电输出效率可以通过在升高的温度下对光伏热电池进行退火而由于曝光导致的退化而恢复。可以通过将热交换流体的流动重新定向以绕过热交换器单元来提供光伏热电池的高温。可以使用锅炉单元来在退火期间提供热交换流体的附加加热。此外，可以在光伏热电池的前表面上设置可变配置盖，以控制前表面上的通风。在退火过程中，可以设置可变配置盖的位置，以便在前表面捕获热量并进一步提高退火温度。

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