会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of recovering uranium from wet process phosphoric acid
    • 从湿法磷酸中回收铀的方法
    • US4431610A
    • 1984-02-14
    • US351171
    • 1982-02-22
    • Soichi AsagaoShinsuke NakagawaNaoki OkadaSeizi Yoshikawa
    • Soichi AsagaoShinsuke NakagawaNaoki OkadaSeizi Yoshikawa
    • C22B60/02C01G56/00
    • C22B60/0282
    • An economically advantageous method of recovering uranium from a wet process phosphoric acid solution through the steps of making hemihydrate gypsum contact with the acid solution thereby transferring uranium from the acid solution into the gypsum, dispersing the U-containing gypsum separated from the acid solution in water to convert the gypsum to dihydrate accompanied by the transfer of uranium into water, separating the obtained U-containing aqueous solution from the dihydrate gypsum, and adding precipitant such as an inorganic base to the aqueous solution to form a precipitate comprising an insoluble uranium compound. The contact of hemihydrate gypsum with the phosphoric acid solution is preferably preceded by reduction of hexavalent uranium in the acid solution to tetravalent uranium, and can be achieved either by adding hemihydrate gypsum to the acid solution or by converting dihydrate gypsum to hemihydrate within the acid solution preferably preceded by the addition of sulfuric acid.
    • 从湿法磷酸溶液中回收铀的经济上有利的方法是通过使半水石膏与酸溶液接触从而将铀从酸溶液转移到石膏中,将从酸溶液中分离的含U石膏分散在水中 将石膏转化成二水合物,伴随着将铀转化成水,从二水石膏中分离得到的含有U的水溶液,并将沉淀剂如无机碱添加到水溶液中以形成包含不溶性铀化合物的沉淀物。 半水石膏与磷酸溶液的接触优选之前是将酸溶液中的六价铀还原成四价铀,并且可以通过向酸性溶液中加入半水石膏或通过将二水合石膏转化为酸溶液中的半水合物来实现 优选在加入硫酸之前。
    • 9. 发明申请
    • Magnetic disk apparatus with dual stage actuator
    • 带双级执行器的磁盘设备
    • US20060039079A1
    • 2006-02-23
    • US11200999
    • 2005-08-09
    • Masahito KobayashiShinsuke NakagawaHidehiko NumasatoYoshio Soyama
    • Masahito KobayashiShinsuke NakagawaHidehiko NumasatoYoshio Soyama
    • G11B5/596
    • G11B5/596G11B5/556
    • In one embodiment, a magnetic disk apparatus comprises a magnetic disk for recording information; a magnetic head that reads information from, or writes information to, the magnetic disk; an actuator device that drives the magnetic head; and a control system that controls the driving of the actuator device. The actuator device is configured by a dual stage actuator comprising a fine actuator that drives the head and a coarse actuator that drives the magnetic head together with the fine actuator. The control system includes a fine controller that generates an operational value for driving the fine actuator and a coarse controller that generates an operational amount for driving the coarse actuator. The control system includes a mechanism for smoothly changing the operational amount generated by the fine controller immediately before saturation resulting from an applied voltage limit of the fine actuator or at the time the fine actuator returns to a control range from the saturation.
    • 在一个实施例中,磁盘装置包括用于记录信息的磁盘; 从磁盘读取信息或将信息写入磁盘的磁头; 驱动磁头的致动器装置; 以及控制致动器装置的驱动的控制系统。 致动器装置由双级致动器构成,该双级致动器包括驱动头部的精细致动器和与精细致动器一起驱动磁头的粗略致动器。 该控制系统包括产生用于驱动精细致动器的操作值的精细控制器和产生用于驱动粗动作器的操作量的粗略控制器。 该控制系统包括一个机构,用于在精细致动器施加的电压极限之前或在精细致动器从饱和状态返回到控制范围时,立即在精确控制器产生的精确控制器之前平滑地改变操作量。
    • 10. 发明授权
    • NF3 treating process
    • NF3治疗过程
    • US06342194B1
    • 2002-01-29
    • US09545521
    • 2000-04-07
    • Takayuki IshibashiShinsuke Nakagawa
    • Takayuki IshibashiShinsuke Nakagawa
    • B01J802
    • B01D53/685B01D53/82B01J8/02
    • A process for treating NF3 useful as a dry etching gas and cleaning gas in processes for producing LSI, TFT, and solar cell and in an electron photographic processes. The treating process comprises following step: (a) preparing a reactor including agitator blades for agitating gas in the reactor and generating a flow of the gas, and a gas flow guide tube for efficiently circulating and dispersing the gas flow generated by the agitator blades in a space of the reactor; (b) stationarily placing at least one substance selected from the group consisting of a metal and a metal compound within a reactor, the metal being at least one metal selected from the group consisting of Si, B, W, Mo, V, Se, Te and Ge, the metal compound being at least one metal compound selected from the group consisting of solid compounds of Si, B, W, Mo, V, Se, Te and Ge: (c) introducing a gas containing NF3 into the reactor to react the introduced gas with at least one substance of the metal and the metal compound at a temperature ranging from 400 to 900° C. upon operating the agitator blades of the reactor so as to form a fluoride gas; and (d) capturing the fluoride gas.
    • 一种用于制造LSI,TFT和太阳能电池的工艺中用作干蚀刻气体和清洁气体的NF 3的方法以及电子照相法。 处理方法包括以下步骤:(a)制备包括用于在反应器中搅拌气体并产生气体流的搅拌器叶片的反应器,以及用于有效地将由搅拌器叶片产生的气流循环和分散的气流引导管 反应堆的一个空间; (b)在反应器内固定放置选自金属和金属化合物的至少一种物质,所述金属为选自Si,B,W,Mo,V,Se, Te和Ge的金属化合物,选自Si,B,W,Mo,V,Se,Te和Ge的固体化合物中的至少一种金属化合物:(c)将含有NF 3的气体引入反应器 在操作反应器的搅拌叶片时,引入的气体与金属和金属化合物的至少一种物质在400-900℃的温度下反应,以形成氟化物气体; 和(d)捕获氟化物气体。