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1. 发明授权

US08787076B2 Magnetic memory and method of manufacturing the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US08787076B2
公开(公告)日：2014-07-22
申请号：US13061299
申请日：2009-08-13
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
IPC分类号： G11C11/14 , G11C11/16 , G11C19/08 , H01L43/08
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841 , H01L27/228 , H01L43/08
摘要： A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.
摘要翻译：根据本发明的磁存储器具有：第一底层; 第二底层如此形成在第一底层上以与第一底层接触; 以及形成在第二底层上以与第二底层接触的数据存储层。数据存储层由具有垂直磁各向异性的铁磁材料制成。数据存储层的磁化状态由电流驱动畴壁运动改变。

2. 发明申请

US20110297909A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁记忆元件和磁记忆
公开(公告)号：US20110297909A1
公开(公告)日：2011-12-08
申请号：US13145082
申请日：2010-01-28
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： H01L27/22 , H01L43/02
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
摘要翻译：磁存储元件包括：由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层，设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。第一磁化自由层包括：磁化固定的第一磁化固定区域，固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域，并且其中可以切换磁化。第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。

3. 发明申请

US20110260273A1 MAGNETIC MEMORY DEVICE AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁记忆装置和磁性随机存取存储器
公开(公告)号：US20110260273A1
公开(公告)日：2011-10-27
申请号：US13139604
申请日：2009-12-24
申请人： Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Kiyokazu Nagahara , Tetsuhiro Suzuki , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C19/0808 , G11C19/0841 , H01L27/228
摘要： A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.
摘要翻译：磁存储单元设置有磁化记录层和磁性隧道结段。磁化记录层是具有垂直磁各向异性的铁磁层。磁性隧道结部分用于从磁化记录层读取数据。磁化记录层具有多个畴壁运动区域。

4. 发明申请

US20110157967A1 MAGNETIC RANDOM ACCESS MEMORY, METHOD OF INITIALIZING MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF WRITING MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性随机存取存储器，磁化随机存取存储器的初始化方法和写入磁性随机存取存储器的方法
公开(公告)号：US20110157967A1
公开(公告)日：2011-06-30
申请号：US13003290
申请日：2009-06-26
申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L27/228 , G11C11/15 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A magnetic memory includes a magnetization recording layer, a first terminal, a second terminal, a magnetization pinned layer and a non-magnetic layer. The magnetization recording layer has a vertical magnetic anisotropy and includes a ferromagnetic layer. The first terminal is connected to one end of a first region in the magnetization recording layer. The second terminal is connected to the other end of the first region. The non-magnetic layer is arranged on the first region. The magnetization pinned layer is arranged on the non-magnetic layer and is located on the side opposite to the first region. The magnetization recording layer includes: a first extension portion located outside the first terminal in the magnetization recording layer; and a property changing structure that is arranged in the first extension portion and substantially changes a magnetization switching property of the magnetization recording layer.
摘要翻译：磁存储器包括磁化记录层，第一端子，第二端子，磁化固定层和非磁性层。磁化记录层具有垂直磁各向异性，并且包括铁磁层。第一端子连接到磁化记录层中的第一区域的一端。第二端子连接到第一区域的另一端。非磁性层布置在第一区域上。磁化钉扎层布置在非磁性层上并且位于与第一区域相对的一侧上。磁化记录层包括：位于磁化记录层中的第一端子外部的第一延伸部分; 以及布置在第一延伸部分中并且实质上改变磁化记录层的磁化转换特性的性质改变结构。

5. 发明申请

US20110002163A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110002163A1
公开(公告)日：2011-01-06
申请号：US12920194
申请日：2009-03-05
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
IPC分类号： G11C11/15
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808
摘要： A semiconductor device includes: a first magnetic random access memory including a first memory cell and a second magnetic random access memory including a second memory cell operating at higher speed than the first memory cell and is provided on the same chip together with the first magnetic random access memory. The first memory cell is a current-induced domain wall motion type MRAM and stores data based on a domain wall position of a magnetization free layer. A layer that a write current flows is different from a layer that a read current flows. The second memory cell is a current-induced magnetic field writing type MRAM and stores data based on a magnetic field induced by a write current.
摘要翻译：半导体器件包括：第一磁性随机存取存储器，包括第一存储单元和第二磁性随机存取存储器，所述第二磁性随机存取存储器包括以比第一存储单元更高的速度工作的第二存储单元，并且与第一磁性随机访问内存第一存储单元是电流感应畴壁运动型MRAM，并存储基于无磁化层的畴壁位置的数据。写入电流流动的层与读取电流流动的层不同。第二存储单元是电流感应磁场写入型MRAM，并存储基于由写入电流引起的磁场的数据。

6. 发明申请

US20100315854A1 MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD FOR THE SAME 有权
标题翻译：磁性随机存取存储器及其相应的初始化方法
公开(公告)号：US20100315854A1
公开(公告)日：2010-12-16
申请号：US12863740
申请日：2008-12-10
申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Norikazu Ohshima , Kiyokazu Nagahara , Nobuyuki Ishiwata
发明人： Tetsuhiro Suzuki , Shunsuke Fukami , Norikazu Ohshima , Kiyokazu Nagahara , Nobuyuki Ishiwata
IPC分类号： G11C19/08
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A domain wall motion type MRAM has: a magnetic recording layer 10 having perpendicular magnetic anisotropy; and a pair of terminals 51 and 52 used for supplying a current to the magnetic recording layer 10. The magnetic recording layer 10 has: a first magnetization region 11 connected to one of the pair of terminals; a second magnetization region 12 connected to the other of the pair of terminals; and a magnetization switching region 13 connecting between the first magnetization region 11 and the second magnetization region 12 and having reversible magnetization. A first pinning site PS1, by which the domain wall is trapped, is formed at a boundary between the first magnetization region 11 and the magnetization switching region 13. A second pinning site PS2, by which the domain wall is trapped, is formed at a boundary between the second magnetization region 12 and the magnetization switching region 13. A third pinning site PS3, by which the domain wall is trapped, is formed within the first magnetization region 11.
摘要翻译：畴壁运动型MRAM具有：具有垂直磁各向异性的磁记录层10; 以及用于向磁记录层10提供电流的一对端子51和52.磁记录层10具有：连接到该对端子之一的第一磁化区域11; 连接到所述一对端子中的另一个的第二磁化区域12; 以及连接在第一磁化区域11和第二磁化区域12之间并具有可逆磁化强度的磁化开关区域13。在第一磁化区域11和磁化转换区域13之间的边界处形成第一钉住位置PS1（通过该区域壁被捕获）。在第一磁化区域11和磁化转换区域13之间的边界处形成第二钉扎位置PS1 第二磁化区域12和磁化转换区域13之间的边界。在第一磁化区域11内形成有第三钉扎位置PS3，畴壁被捕获。

7. 发明申请

US20100309713A1 MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US20100309713A1
公开(公告)日：2010-12-09
申请号：US12865197
申请日：2009-01-09
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/222 , Y10S977/933 , Y10S977/935
摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization fixed layer, a first magnetization free layer, a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer, a second magnetization fixed layer, a second magnetization free layer and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, and the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. Center of the second magnetization free layer is displaced in a first direction from center of the first magnetization free layer in a plane parallel to each layer. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a third magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a third nonmagnetic layer sandwiched between the third magnetization fixed layer and the third magnetization free layer. The third magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.
摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。第一磁阻元件具有第一磁化固定层，第一磁化自由层，夹在第一磁化固定层和第一磁化自由层之间的第一非磁性层，第二磁化固定层，第二磁化自由层和第二非磁性层层夹在第二磁化固定层和第二磁化自由层之间。第一磁化固定层和第一磁化自由层具有垂直的磁各向异性，第二磁化固定层和第二磁化自由层具有面内磁各向异性。第一磁化自由层和第二磁化自由层彼此磁耦合。第二磁化自由层的中心在与第一磁化自由层的平行于每个层的平面中的第一方向上位移。而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第三磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第三磁化固定层和第三磁化自由层之间的第三非磁性层。第三磁化固定层和第三磁化自由层具有面内磁各向异性。

8. 发明申请

US20100309712A1 MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US20100309712A1
公开(公告)日：2010-12-09
申请号：US12865194
申请日：2009-01-09
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/222
摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has perpendicular magnetic anisotropy, and the first magnetization fixed layer and the second magnetization free layer has in-plane magnetic anisotropy. The first magnetization free layer has: first and second magnetization fixed regions whose magnetization directions are fixed; and a magnetization free region whose magnetization direction is reversible and connected to the first and second magnetization fixed regions. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. In a plane parallel to each layer, center of the second magnetization free layer is displaced in a first direction from center of the magnetization free region. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer. The second magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.
摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。第一磁阻元件具有第一磁化自由层，第一磁化固定层，第二磁化自由层和夹在第一磁化固定层和第二磁化自由层之间的第一非磁性层。第一磁化自由层具有垂直的磁各向异性，第一磁化固定层和第二磁化自由层具有面内磁各向异性。第一磁化自由层具有：其磁化方向固定的第一和第二磁化固定区; 和磁化方向可逆地连接到第一和第二磁化固定区域的无磁化区域。磁化自由区和第二磁化自由层彼此磁耦合。在平行于每个层的平面中，第二磁化自由层的中心在从无磁化区域的中心向第一方向位移。而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第二磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第二磁化固定层和第三磁化自由层之间的第二非磁性层。第二磁化固定层和第三磁化自由层具有面内磁各向异性。

9. 发明授权

US08994130B2 Magnetic memory element and magnetic memory 有权
标题翻译：磁存储元件和磁存储器
公开(公告)号：US08994130B2
公开(公告)日：2015-03-31
申请号：US13145082
申请日：2010-01-28
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： H01L27/22 , G11C11/16 , H01L43/08
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
摘要翻译：磁存储元件包括：由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层，设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。第一磁化自由层包括：磁化固定的第一磁化固定区域，固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域，并且其中可以切换磁化。第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。

10. 发明授权

US08592930B2 Magnetic memory element, magnetic memory and initializing method 有权
标题翻译：磁记忆元件，磁记忆和初始化方法
公开(公告)号：US08592930B2
公开(公告)日：2013-11-26
申请号：US13504071
申请日：2010-10-21
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/5607 , G11C19/0808 , G11C2013/0083 , H01L27/228
摘要： A magnetic memory element includes: a first magnetization free layer; a non-magnetic layer; a reference layer; a first magnetization fixed layer group; and a first blocking layer. The first magnetization free layer is composed of ferromagnetic material with perpendicular magnetic anisotropy and includes a first magnetization fixed region, a second magnetization fixed region and a magnetization free region. The non-magnetic layer is provided near the first magnetization free layer. The reference layer is composed of ferromagnetic material and provided on the non-magnetic layer. The first magnetization fixed layer group is provided near the first magnetization fixed region. The first blocking layer is provided being sandwiched between the first magnetization fixed layer group and the first magnetization fixed region or in the first magnetization fixed layer group.
摘要翻译：磁存储元件包括：第一磁化自由层; 非磁性层; 参考层; 第一磁化固定层组; 和第一阻挡层。第一磁化自由层由具有垂直磁各向异性的铁磁材料组成，并且包括第一磁化固定区域，第二磁化固定区域和无磁化区域。非磁性层设置在第一磁化自由层附近。参考层由铁磁材料组成并设置在非磁性层上。第一磁化固定层组设置在第一磁化固定区附近。第一阻挡层被设置在第一磁化固定层组和第一磁化固定区之间或第一磁化固定层组中。

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