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    • 2. 发明申请
    • MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
    • 磁记忆元件和磁记忆
    • US20110297909A1
    • 2011-12-08
    • US13145082
    • 2010-01-28
    • Shunsuke FukamiTetsuhiro SuzukiKiyokazu NagaharaNobuyuki IshiwataNorikazu Ohshima
    • Shunsuke FukamiTetsuhiro SuzukiKiyokazu NagaharaNobuyuki IshiwataNorikazu Ohshima
    • H01L27/22H01L43/02
    • G11C11/16G11C11/161G11C11/1655G11C11/1659G11C11/1673G11C11/1675H01L27/228H01L43/08
    • A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
    • 磁存储元件包括:由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层,设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。 第一磁化自由层包括:磁化固定的第一磁化固定区域,固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域, 并且其中可以切换磁化。 第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。 第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。
    • 6. 发明申请
    • MAGNETIC RANDOM ACCESS MEMORY AND INITIALIZING METHOD FOR THE SAME
    • 磁性随机存取存储器及其相应的初始化方法
    • US20100315854A1
    • 2010-12-16
    • US12863740
    • 2008-12-10
    • Tetsuhiro SuzukiShunsuke FukamiNorikazu OhshimaKiyokazu NagaharaNobuyuki Ishiwata
    • Tetsuhiro SuzukiShunsuke FukamiNorikazu OhshimaKiyokazu NagaharaNobuyuki Ishiwata
    • G11C19/08
    • H01L43/08G11C11/161G11C11/1659G11C11/1673G11C11/1675H01L27/228
    • A domain wall motion type MRAM has: a magnetic recording layer 10 having perpendicular magnetic anisotropy; and a pair of terminals 51 and 52 used for supplying a current to the magnetic recording layer 10. The magnetic recording layer 10 has: a first magnetization region 11 connected to one of the pair of terminals; a second magnetization region 12 connected to the other of the pair of terminals; and a magnetization switching region 13 connecting between the first magnetization region 11 and the second magnetization region 12 and having reversible magnetization. A first pinning site PS1, by which the domain wall is trapped, is formed at a boundary between the first magnetization region 11 and the magnetization switching region 13. A second pinning site PS2, by which the domain wall is trapped, is formed at a boundary between the second magnetization region 12 and the magnetization switching region 13. A third pinning site PS3, by which the domain wall is trapped, is formed within the first magnetization region 11.
    • 畴壁运动型MRAM具有:具有垂直磁各向异性的磁记录层10; 以及用于向磁记录层10提供电流的一对端子51和52.磁记录层10具有:连接到该对端子之一的第一磁化区域11; 连接到所述一对端子中的另一个的第二磁化区域12; 以及连接在第一磁化区域11和第二磁化区域12之间并具有可逆磁化强度的磁化开关区域13。 在第一磁化区域11和磁化转换区域13之间的边界处形成第一钉住位置PS1(通过该区域壁被捕获)。在第一磁化区域11和磁化转换区域13之间的边界处形成第二钉扎位置PS1 第二磁化区域12和磁化转换区域13之间的边界。在第一磁化区域11内形成有第三钉扎位置PS3,畴壁被捕获。
    • 7. 发明申请
    • MAGNETIC RANDOM ACCESS MEMORY
    • 磁性随机存取存储器
    • US20100309713A1
    • 2010-12-09
    • US12865197
    • 2009-01-09
    • Shunsuke FukamiNobuyuki IshiwataTetsuhiro SuzukiNorikazu OhshimaKiyokazu Nagahara
    • Shunsuke FukamiNobuyuki IshiwataTetsuhiro SuzukiNorikazu OhshimaKiyokazu Nagahara
    • G11C11/00
    • H01L43/08G11C11/161G11C11/1655G11C11/1659G11C11/1673G11C11/1675H01L27/222Y10S977/933Y10S977/935
    • An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization fixed layer, a first magnetization free layer, a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer, a second magnetization fixed layer, a second magnetization free layer and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, and the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. Center of the second magnetization free layer is displaced in a first direction from center of the first magnetization free layer in a plane parallel to each layer. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a third magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a third nonmagnetic layer sandwiched between the third magnetization fixed layer and the third magnetization free layer. The third magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.
    • MRAM具有:包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。 第一磁阻元件具有第一磁化固定层,第一磁化自由层,夹在第一磁化固定层和第一磁化自由层之间的第一非磁性层,第二磁化固定层,第二磁化自由层和第二非磁性层 层夹在第二磁化固定层和第二磁化自由层之间。 第一磁化固定层和第一磁化自由层具有垂直的磁各向异性,第二磁化固定层和第二磁化自由层具有面内磁各向异性。 第一磁化自由层和第二磁化自由层彼此磁耦合。 第二磁化自由层的中心在与第一磁化自由层的平行于每个层的平面中的第一方向上位移。 而第二磁阻元件具有:其易磁化轴平行于第二方向的第三磁化自由层; 第三磁化固定层,其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第三磁化固定层和第三磁化自由层之间的第三非磁性层。 第三磁化固定层和第三磁化自由层具有面内磁各向异性。
    • 8. 发明申请
    • MAGNETIC RANDOM ACCESS MEMORY
    • 磁性随机存取存储器
    • US20100309712A1
    • 2010-12-09
    • US12865194
    • 2009-01-09
    • Shunsuke FukamiNobuyuki IshiwataTetsuhiro SuzukiNorikazu OhshimaKiyokazu Nagahara
    • Shunsuke FukamiNobuyuki IshiwataTetsuhiro SuzukiNorikazu OhshimaKiyokazu Nagahara
    • G11C11/00
    • H01L43/08G11C11/161G11C11/1673G11C11/1675H01L27/222
    • An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has perpendicular magnetic anisotropy, and the first magnetization fixed layer and the second magnetization free layer has in-plane magnetic anisotropy. The first magnetization free layer has: first and second magnetization fixed regions whose magnetization directions are fixed; and a magnetization free region whose magnetization direction is reversible and connected to the first and second magnetization fixed regions. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. In a plane parallel to each layer, center of the second magnetization free layer is displaced in a first direction from center of the magnetization free region. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer. The second magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.
    • MRAM具有:包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。 第一磁阻元件具有第一磁化自由层,第一磁化固定层,第二磁化自由层和夹在第一磁化固定层和第二磁化自由层之间的第一非磁性层。 第一磁化自由层具有垂直的磁各向异性,第一磁化固定层和第二磁化自由层具有面内磁各向异性。 第一磁化自由层具有:其磁化方向固定的第一和第二磁化固定区; 和磁化方向可逆地连接到第一和第二磁化固定区域的无磁化区域。 磁化自由区​​和第二磁化自由层彼此磁耦合。 在平行于每个层的平面中,第二磁化自由层的中心在从无磁化区域的中心向第一方向位移。 而第二磁阻元件具有:其易磁化轴平行于第二方向的第三磁化自由层; 第二磁化固定层,其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第二磁化固定层和第三磁化自由层之间的第二非磁性层。 第二磁化固定层和第三磁化自由层具有面内磁各向异性。