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1. 发明授权

US08043901B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US08043901B2
公开(公告)日：2011-10-25
申请号：US12222686
申请日：2008-08-14
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L27/124 , H01L29/04 , H01L29/41733 , H01L29/66765
摘要： The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.
摘要翻译：本发明涉及一种制造显示装置的方法，该显示装置包括一个p沟道薄膜晶体管和一个具有微晶半导体薄膜的n沟道薄膜晶体管，它们都是反向交错型，并且涉及一种形成方法包括在薄膜晶体管中的绝缘膜和半导体膜。向反应室内产生辉光放电等离子体的电极供给具有不同频率的两种以上的高频电力。提供具有不同频率的高频功率以产生辉光放电等离子体，从而形成半导体或绝缘体的薄膜。具有不同频率（不同波长）的高频功率被叠加并施加到等离子体CVD装置的电极，从而可以实现等离子体的致密化和均匀性，以防止等离子体的表面驻波的影响。

2. 发明授权

US07888681B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07888681B2
公开(公告)日：2011-02-15
申请号：US12222672
申请日：2008-08-14
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1233 , H01L27/3262 , H01L29/04 , H01L29/41733 , H01L29/458 , H01L29/78696
摘要： A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.
摘要翻译：证明了包括具有优异的电特性和高可靠性的n沟道薄膜晶体管和p沟道薄膜晶体管的显示装置，并且还提供了其制造方法。显示装置包括反向交错的p沟道薄膜晶体管和反向交错的n沟道薄膜晶体管，其中栅极绝缘膜，微晶半导体膜和非晶半导体膜依次层叠在栅电极上。微晶半导体膜含有浓度为1×1016原子/ cm3以下的氧。 n沟道薄膜晶体管和p沟道薄膜晶体管的迁移率分别为10〜45cm2 / V·s，0.3cm2·V·s以下。

3. 发明申请

US20090047775A1 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US20090047775A1
公开(公告)日：2009-02-19
申请号：US12222686
申请日：2008-08-14
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
IPC分类号： H01L21/205
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L27/124 , H01L29/04 , H01L29/41733 , H01L29/66765
摘要： The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.
摘要翻译：本发明涉及一种制造显示装置的方法，该显示装置包括一个p沟道薄膜晶体管和一个具有微晶半导体薄膜的n沟道薄膜晶体管，它们都是反向交错型，并且涉及一种形成方法包括在薄膜晶体管中的绝缘膜和半导体膜。向反应室内产生辉光放电等离子体的电极供给具有不同频率的两种以上的高频电力。提供具有不同频率的高频功率以产生辉光放电等离子体，从而形成半导体或绝缘体的薄膜。具有不同频率（不同波长）的高频功率被叠加并施加到等离子体CVD装置的电极，从而可以实现等离子体的致密化和均匀性，以防止等离子体的表面驻波的影响。

4. 发明申请

US20090045409A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20090045409A1
公开(公告)日：2009-02-19
申请号：US12222672
申请日：2008-08-14
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1233 , H01L27/3262 , H01L29/04 , H01L29/41733 , H01L29/458 , H01L29/78696
摘要： A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.
摘要翻译：证明了包括具有优异的电特性和高可靠性的n沟道薄膜晶体管和p沟道薄膜晶体管的显示装置，并且还提供了其制造方法。显示装置包括反向交错的p沟道薄膜晶体管和反向交错的n沟道薄膜晶体管，其中栅极绝缘膜，微晶半导体膜和非晶半导体膜依次层叠在栅电极上。微晶半导体膜含有浓度为1×10 16原子/ cm 3以下的氧。 n沟道薄膜晶体管和p沟道薄膜晶体管的迁移率分别为10〜45cm2 / Vs，0.3cm2 / V·s以下。

5. 发明申请

US20090002591A1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US20090002591A1
公开(公告)日：2009-01-01
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabrara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabrara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02F1/133345 , H01L21/67207 , H01L29/41733 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
摘要翻译：本发明的目的是提出具有高质量生产率的液晶显示装置的制造方法，其具有具有高可靠电特性的薄膜晶体管。在具有反交错薄膜晶体管的液晶显示装置中，反交错薄膜晶体管形成如下：在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成用作沟道形成区的微晶半导体膜; 在微晶半导体膜上形成缓冲层; 在缓冲层上形成一对源区和漏区; 并且形成与源区和漏区接触的一对源电极和漏电极，以便露出源区和漏区的一部分。

6. 发明授权

US09057924B2 Liquid crystal display device 有权
公开(公告)号：US09057924B2
公开(公告)日：2015-06-16
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/67
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

7. 发明授权

US09176353B2 Liquid crystal display device 有权
公开(公告)号：US09176353B2
公开(公告)日：2015-11-03
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/67
CPC分类号： G02F1/1368 , G02F1/133345 , H01L21/67207 , H01L29/41733 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

8. 发明授权

US08712481B2 Electric power supply system and electric power supply system for motor vehicle 有权
标题翻译：汽车电源系统及电力供应系统
公开(公告)号：US08712481B2
公开(公告)日：2014-04-29
申请号：US12841381
申请日：2010-07-22
申请人： Yutaka Shionoiri , Jun Koyama , Yoshiyuki Kurokawa , Shunpei Yamazaki , Takayuki Ikeda , Takeshi Osada , Tomoaki Atsumi , Masato Ishii
发明人： Yutaka Shionoiri , Jun Koyama , Yoshiyuki Kurokawa , Shunpei Yamazaki , Takayuki Ikeda , Takeshi Osada , Tomoaki Atsumi , Masato Ishii
IPC分类号： H04B1/38 , H04M1/00
CPC分类号： H02J7/0052 , B60L8/003 , B60L11/182 , B60L2230/16 , H02J7/025 , H02J17/00 , H02J50/12 , H02J50/20 , H02J50/40 , H02J50/90 , Y02T10/7011 , Y02T10/7083 , Y02T10/7088 , Y02T90/122 , Y02T90/128 , Y02T90/14 , Y02T90/163
摘要： To provide for a movable electronic device a power receiving device that when charging a battery, simplifies charging of the battery from a power feeder, which is a power supply means, and does not have faults due to an external factor relating to a relay terminal, or damage of the relay terminal, that are caused by directly connecting the battery and the power feeder, and further, to provide an electronic device including the power receiving device. An antenna circuit and a booster antenna for supplying electric power are provided in a movable electronic device. The antenna circuit receives a radio signal such as an electromagnetic wave via the booster antenna, and electric power that is obtained through the receiving of the radio signal is supplied to the battery through a signal processing circuit.
摘要翻译：为了提供可移动电子装置，一种电力接收装置，其在对电池充电时，简化从作为电源装置的供电器的电池的充电，并且由于与中继端子有关的外部因素而没有故障，或由直接连接电池和馈电器引起的继电器端子的损坏，并且还提供包括电力接收装置的电子设备。在可移动电子装置中设置用于提供电力的天线电路和增强天线。天线电路通过增强天线接收诸如电磁波的无线电信号，并且通过接收无线电信号获得的电力通过信号处理电路被提供给电池。

9. 发明授权

US08633051B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08633051B2
公开(公告)日：2014-01-21
申请号：US12859446
申请日：2010-08-19
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
IPC分类号： H01L31/0232 , H01L21/71
CPC分类号： G09F9/33 , H01L31/0203 , H01L31/02325
摘要： An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching.
摘要翻译：目的是防止当反射光进入布置在布置在预定地址处的光电转换元件的周围的光电转换元件时引起的定义（或分辨率）（外围模糊）的降低。通过以下步骤制造半导体器件：在第一透光衬底上形成具有第一透光衬底，多个光电转换元件的结构，设置成面对多个光电转换元件的第二透光衬底转换元件，密封剂，其被布置成结合第一透光性基板和第二透光性基板，并且包围多个光电转换元件; 并通过湿蚀刻使第一透光衬底变薄。

10. 发明授权

US08624321B2 Thin film transistor including a microcrystalline semiconductor layer and amorphous semiconductor layer and display device including the same 有权
标题翻译：包括微晶半导体层和非晶半导体层的薄膜晶体管以及包括其的显示装置
公开(公告)号：US08624321B2
公开(公告)日：2014-01-07
申请号：US12398295
申请日：2009-03-05
申请人： Shunpei Yamazaki , Yoshiyuki Kurokawa , Hiromichi Godo , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Yoshiyuki Kurokawa , Hiromichi Godo , Hidekazu Miyairi
IPC分类号： H01L23/62
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/66765
摘要： A thin film transistor is provided, which includes a gate insulating layer covering a gate electrode, a microcrystalline semiconductor layer provided over the gate insulating layer, an amorphous semiconductor layer overlapping the microcrystalline semiconductor layer and the gate insulating layer, and a pair of impurity semiconductor layers which are provided over the amorphous semiconductor layer and to which an impurity element imparting one conductivity type is added to form a source region and a drain region. The gate insulating layer has a step adjacent to a portion in contact with an end portion of the microcrystalline semiconductor layer. A second thickness of the gate insulating layer in a portion outside the microcrystalline semiconductor layer is smaller than a first thickness thereof in a portion in contact with the microcrystalline semiconductor layer.
摘要翻译：提供一种薄膜晶体管，其包括覆盖栅极的栅极绝缘层，设置在栅极绝缘层上的微晶半导体层，与微晶半导体层和栅极绝缘层重叠的非晶半导体层，以及一对杂质半导体提供在非晶半导体层上并且添加赋予一种导电类型的杂质元素以形成源区和漏区的层。栅极绝缘层具有与微晶半导体层的端部接触的部分相邻的台阶。在与微晶半导体层接触的部分中，微晶半导体层外部的栅极绝缘层的第二厚度小于其第一厚度。

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