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1. 发明授权

US08043901B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US08043901B2
公开(公告)日：2011-10-25
申请号：US12222686
申请日：2008-08-14
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L27/124 , H01L29/04 , H01L29/41733 , H01L29/66765
摘要： The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.
摘要翻译：本发明涉及一种制造显示装置的方法，该显示装置包括一个p沟道薄膜晶体管和一个具有微晶半导体薄膜的n沟道薄膜晶体管，它们都是反向交错型，并且涉及一种形成方法包括在薄膜晶体管中的绝缘膜和半导体膜。向反应室内产生辉光放电等离子体的电极供给具有不同频率的两种以上的高频电力。提供具有不同频率的高频功率以产生辉光放电等离子体，从而形成半导体或绝缘体的薄膜。具有不同频率（不同波长）的高频功率被叠加并施加到等离子体CVD装置的电极，从而可以实现等离子体的致密化和均匀性，以防止等离子体的表面驻波的影响。

2. 发明授权

US07888681B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07888681B2
公开(公告)日：2011-02-15
申请号：US12222672
申请日：2008-08-14
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1233 , H01L27/3262 , H01L29/04 , H01L29/41733 , H01L29/458 , H01L29/78696
摘要： A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.
摘要翻译：证明了包括具有优异的电特性和高可靠性的n沟道薄膜晶体管和p沟道薄膜晶体管的显示装置，并且还提供了其制造方法。显示装置包括反向交错的p沟道薄膜晶体管和反向交错的n沟道薄膜晶体管，其中栅极绝缘膜，微晶半导体膜和非晶半导体膜依次层叠在栅电极上。微晶半导体膜含有浓度为1×1016原子/ cm3以下的氧。 n沟道薄膜晶体管和p沟道薄膜晶体管的迁移率分别为10〜45cm2 / V·s，0.3cm2·V·s以下。

3. 发明申请

US20090047775A1 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US20090047775A1
公开(公告)日：2009-02-19
申请号：US12222686
申请日：2008-08-14
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
IPC分类号： H01L21/205
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L27/124 , H01L29/04 , H01L29/41733 , H01L29/66765
摘要： The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.
摘要翻译：本发明涉及一种制造显示装置的方法，该显示装置包括一个p沟道薄膜晶体管和一个具有微晶半导体薄膜的n沟道薄膜晶体管，它们都是反向交错型，并且涉及一种形成方法包括在薄膜晶体管中的绝缘膜和半导体膜。向反应室内产生辉光放电等离子体的电极供给具有不同频率的两种以上的高频电力。提供具有不同频率的高频功率以产生辉光放电等离子体，从而形成半导体或绝缘体的薄膜。具有不同频率（不同波长）的高频功率被叠加并施加到等离子体CVD装置的电极，从而可以实现等离子体的致密化和均匀性，以防止等离子体的表面驻波的影响。

4. 发明申请

US20090045409A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20090045409A1
公开(公告)日：2009-02-19
申请号：US12222672
申请日：2008-08-14
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1233 , H01L27/3262 , H01L29/04 , H01L29/41733 , H01L29/458 , H01L29/78696
摘要： A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.
摘要翻译：证明了包括具有优异的电特性和高可靠性的n沟道薄膜晶体管和p沟道薄膜晶体管的显示装置，并且还提供了其制造方法。显示装置包括反向交错的p沟道薄膜晶体管和反向交错的n沟道薄膜晶体管，其中栅极绝缘膜，微晶半导体膜和非晶半导体膜依次层叠在栅电极上。微晶半导体膜含有浓度为1×10 16原子/ cm 3以下的氧。 n沟道薄膜晶体管和p沟道薄膜晶体管的迁移率分别为10〜45cm2 / Vs，0.3cm2 / V·s以下。

5. 发明授权

US08455954B2 Wireless chip and electronic appliance having the same 有权
标题翻译：无线芯片和电器具有相同的功能
公开(公告)号：US08455954B2
公开(公告)日：2013-06-04
申请号：US13445262
申请日：2012-04-12
申请人： Yukie Suzuki , Yasuyuki Arai , Shunpei Yamazaki
发明人： Yukie Suzuki , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01L27/11
CPC分类号： H01L27/1214 , H01L21/84 , H01L23/49855 , H01L27/1255 , H01L27/13 , H01L29/78621 , H01L29/78675 , H01L2223/6677 , H01L2924/0002 , H01Q1/22 , H01Q1/2283 , H01Q9/0407 , H01Q9/27 , H01L2924/00
摘要： The present invention provides a wireless chip having high mechanical strength. Moreover, the present invention also provides a wireless chip which can prevent an electric wave from being blocked. In a wireless chip of the present invention, a layer having a thin film transistor formed over an insulating substrate is fixed to an antenna by an anisotropic conductive adhesive, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer; the first conductive layer and the second conductive layer has the dielectric layer therebetween; the first conductive layer serves as a radiating electrode; and the second electrode serves as a ground contact body.
摘要翻译：本发明提供一种机械强度高的无线芯片。此外，本发明还提供一种能够防止电波被阻挡的无线芯片。在本发明的无线芯片中，通过各向异性导电粘合剂将具有形成在绝缘基板上的薄膜晶体管的层固定到天线，并且薄膜晶体管连接到天线。天线具有电介质层，第一导电层和第二导电层; 第一导电层和第二导电层之间具有介电层; 第一导电层用作辐射电极; 第二电极用作接地体。

6. 发明授权

US07928910B2 Wireless chip and electronic device having wireless chip 有权
标题翻译：无线芯片和具有无线芯片的电子设备
公开(公告)号：US07928910B2
公开(公告)日：2011-04-19
申请号：US11886157
申请日：2006-03-23
申请人： Yukie Suzuki , Yasuyuki Arai , Shunpei Yamazaki
发明人： Yukie Suzuki , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01Q1/38 , H01Q1/48
CPC分类号： H01Q1/243 , H01L2223/6677 , H01L2224/0401 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2924/15311 , H01Q1/2208 , H01Q9/0407
摘要： It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.
摘要翻译：本发明的目的是提供一种能够提高机械强度的无线芯片，以及具有高耐久性的无线芯片。无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线以及连接芯片和天线的导电层。此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，传感器装置，连接芯片和天线的导电层以及连接芯片和传感器的导电层设备。此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，电池，连接芯片和天线的导电层以及连接芯片和电池的导电层。

7. 发明申请

US20100237774A1 Lighting Device 有权
标题翻译：照明装置
公开(公告)号：US20100237774A1
公开(公告)日：2010-09-23
申请号：US12722791
申请日：2010-03-12
申请人： Shunpei Yamazaki , Yasuyuki Arai , Noriko Shibata , Yukie Suzuki , Yasuo Nakamura , Ikuko Kawamata , Yoshitaka Moriya
发明人： Shunpei Yamazaki , Yasuyuki Arai , Noriko Shibata , Yukie Suzuki , Yasuo Nakamura , Ikuko Kawamata , Yoshitaka Moriya
IPC分类号： H05B33/06
CPC分类号： H01L51/5012 , F21K9/20 , F21K9/23 , F21S8/03 , F21S8/04 , F21S41/155 , F21V21/002 , F21Y2105/00 , F21Y2115/20 , H01L33/02 , H01L33/62 , H01L51/5064 , H05B33/22 , H05B33/28
摘要： To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.
摘要翻译：为了减轻使用电致发光材料的照明装置的厚度，并且简化了使用电致发光材料的照明装置的结构，在本发明的照明装置中：将包括在照明装置中的发光元件电连接的端子器件到外部形成在与发光元件相同的表面上; 并且端子形成在基板的中心，同时发光元件堆叠。另外，照明装置具有发光元件不易劣化的结构。

8. 发明授权

US08980733B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08980733B2
公开(公告)日：2015-03-17
申请号：US12904181
申请日：2010-10-14
申请人： Shunpei Yamazaki , Yukie Suzuki , Yasuyuki Arai , Yoshitaka Moriya , Kazuko Ikeda , Yoshifumi Tanada , Shuhei Takahashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Yasuyuki Arai , Yoshitaka Moriya , Kazuko Ikeda , Yoshifumi Tanada , Shuhei Takahashi
IPC分类号： H01L21/02 , H01L29/423 , H01L21/28 , H01L27/12 , H01L29/66 , H01L29/786 , H01L29/788 , H01L21/84 , H01L27/13
CPC分类号： H01L29/42368 , H01L21/28273 , H01L21/28282 , H01L21/84 , H01L27/12 , H01L27/1203 , H01L27/1214 , H01L27/1248 , H01L27/1255 , H01L27/13 , H01L29/42384 , H01L29/66757 , H01L29/66825 , H01L29/66833 , H01L29/78609 , H01L29/78618 , H01L29/7881
摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.
摘要翻译：半导体器件具有半导体层，覆盖半导体层的端部的栅电极和用于使半导体层和栅电极绝缘的绝缘层。使半导体层的端部与栅电极重叠的区域绝缘的绝缘层的膜厚比覆盖半导体层的中心部的绝缘层的膜厚厚。

9. 发明授权

US08783577B2 Semiconductor device and electronic device having the same 有权
标题翻译：半导体装置及具有该半导体装置的电子装置
公开(公告)号：US08783577B2
公开(公告)日：2014-07-22
申请号：US11885634
申请日：2006-03-09
申请人： Yukie Suzuki , Yasuyuki Arai , Shunpei Yamazaki
发明人： Yukie Suzuki , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： G06K19/06
CPC分类号： H01L24/32 , H01L21/6836 , H01L21/84 , H01L23/64 , H01L23/66 , H01L24/29 , H01L24/83 , H01L24/97 , H01L25/0657 , H01L25/16 , H01L27/105 , H01L27/1052 , H01L27/1214 , H01L27/1266 , H01L2221/68327 , H01L2221/6835 , H01L2221/68377 , H01L2221/68381 , H01L2223/6677 , H01L2224/03002 , H01L2224/03009 , H01L2224/06181 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/2912 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29364 , H01L2224/2939 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29464 , H01L2224/32145 , H01L2224/32225 , H01L2224/32265 , H01L2224/32501 , H01L2224/33181 , H01L2224/83005 , H01L2224/83007 , H01L2224/83851 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06565 , H01L2924/07811 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/142 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01Q23/00 , H01L2924/00 , H01L2224/03 , H01L2924/0665 , H01L2924/00014 , H01L2924/014 , H01L2224/83
摘要： It is an object of the present invention to provide a wireless chip of which mechanical strength can be increased. Moreover, it is an object of the present invention to provide a wireless chip which can prevent an electric wave from being blocked. The invention is a wireless chip in which a layer having a thin film transistor is fixed to an antenna by an anisotropic conductive adhesive or a conductive layer, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer. The dielectric layer is sandwiched between the first conductive layer and the second conductive layer. The first conductive layer serves as a radiating electrode and the second conductive layer serves as a ground contact body.
摘要翻译：本发明的目的是提供一种可以增加其机械强度的无线芯片。此外，本发明的目的是提供一种能够防止电波被阻挡的无线芯片。本发明是一种无线芯片，其中具有薄膜晶体管的层通过各向异性导电粘合剂或导电层固定到天线，并且薄膜晶体管连接到天线。天线具有电介质层，第一导电层和第二导电层。电介质层夹在第一导电层和第二导电层之间。第一导电层用作辐射电极，第二导电层用作接地体。

10. 发明授权

US08742480B2 Wireless chip and electronic device having wireless chip 有权
标题翻译：无线芯片和具有无线芯片的电子设备
公开(公告)号：US08742480B2
公开(公告)日：2014-06-03
申请号：US13081519
申请日：2011-04-07
申请人： Yukie Suzuki , Yasuyuki Arai , Shunpei Yamazaki
发明人： Yukie Suzuki , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01L27/108
CPC分类号： H01Q9/0407 , G06K19/07745 , G06K19/07749 , G06K19/07786 , H01L23/66 , H01L24/17 , H01L24/32 , H01L24/73 , H01L27/088 , H01L2223/6677 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2224/16265 , H01L2224/32225 , H01L2224/32265 , H01L2224/73204 , H01L2924/00014 , H01L2924/01025 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/07811 , H01L2924/09701 , H01L2924/12041 , H01L2924/12044 , H01L2924/13091 , H01L2924/3011 , H01M10/0436 , H01M10/465 , H01M2220/30 , H01Q1/2208 , H01Q1/2283 , H01Q23/00 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.
摘要翻译：本发明的目的是提供一种能够提高机械强度的无线芯片，以及具有高耐久性的无线芯片。无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线以及连接芯片和天线的导电层。此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，传感器装置，连接芯片和天线的导电层以及连接芯片和传感器的导电层设备。此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，电池，连接芯片和天线的导电层以及连接芯片和电池的导电层。

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