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1. 发明授权

US5187601A Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously 失效
标题翻译：用于制造高对比度液晶显示器的方法，包括同时激光划刻不透明和透明导电条
公开(公告)号：US5187601A
公开(公告)日：1993-02-16
申请号：US807748
申请日：1991-12-17
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G02F1/134336 , G02F1/133512
摘要： A method for forming a resistance-reducing electrode pattern in an electrooptical device includes the steps of: forming a transparent conductive film on a substrate; forming a plurality of opaque conductive strips on the film; and scribing the combined structure with a laser through the two layers to simultaneously divide the conductive strips into two parts and pattern the transparent film. In this manner, a pattern of transparent electrodes bordered with an opaque electrode pattern is formed. In specific embodiments, the opaque strips may comprise chromium, and the opaque conductive strips may be formed prior to application of the steps above by laser scribing an applied opaque film layer.
摘要翻译：在电光装置中形成电阻减少电极图案的方法包括以下步骤：在衬底上形成透明导电膜; 在所述膜上形成多个不透明导电条; 并通过两层用激光刻划组合结构，同时将导电条分成两部分，并对透明膜进行图案化。以这种方式，形成与不透明电极图案相邻的透明电极的图案。在具体实施例中，不透明条可以包括铬，并且不透明导电条可以在施加上述步骤之前通过激光划刻施加的不透明膜层而形成。

2. 发明授权

US5014100A Image sensor free from undesirable incident light rays which have not been reflected in the surface bearing the image to be sensed 失效
标题翻译：图像传感器没有不希望的入射光线，它们没有被反射在带有待感测图像的表面上
公开(公告)号：US5014100A
公开(公告)日：1991-05-07
申请号：US285419
申请日：1988-12-16
申请人： Takeshi Fukada , Mitsufumi Codama , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Ichiro Takayama
发明人： Takeshi Fukada , Mitsufumi Codama , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Ichiro Takayama
IPC分类号： H01L27/146 , H04N1/031
CPC分类号： H04N1/0316 , H01L27/14665 , H04N1/0313
摘要： A contact image sensor for use in facsimile machines is described. A light window is opened through a photosensitive semiconductor film deposited on a glass sustrate. Light rays are passed through the light window, reflected on an original and absorbed by the semiconductor film in order to produce image signals containing visual information of the original. Provided on the light incident side of the semiconductor film is a light blocking electrode which prevents incident light rays from directly entering the semiconductor film therethrough without reflection on the original. The opposing electrode formed on the other side of the semiconductor film is made of a transparent film covering the side surface of the light window. The opposing electrode on the side surface functions to eliminate noise signals caused by undesirable light rays incident through the side surface, which otherwise, would deteriorate the output signals of the image sensor.

3. 发明授权

US5574293A Solid state imaging device using disilane 失效
标题翻译：使用乙硅烷的固态成像装置
公开(公告)号：US5574293A
公开(公告)日：1996-11-12
申请号：US343492
申请日：1994-11-22
申请人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
发明人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
IPC分类号： H01L21/84 , H01L27/12 , H01L27/146 , H01L31/113 , H01L31/062
CPC分类号： H01L27/14643 , H01L21/84 , H01L27/1237 , H01L31/1133
摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4'). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.
摘要翻译： PCT No.PCT / JP94 / 00452 Sec。 371日期：1994年11月22日 102（e）日期1994年11月22日PCT 1994年3月22日PCT公布。 WO94 / 22173 PCT出版物日期：1994年9月29日一种衬底（1）具有被绝缘层（2）覆盖的表面，其上提供由非单晶硅通过薄膜技术制成的有源层（3'）。栅极电极层（5'）通过栅极绝缘层（4'）部分地设置在所述有源层上。所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出从所述源电极或所述漏电极获得。用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。

4. 发明授权

US6100860A Image display device 失效
标题翻译：图像显示装置
公开(公告)号：US6100860A
公开(公告)日：2000-08-08
申请号：US71161
申请日：1998-05-04
申请人： Ichiro Takayama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Mitsufumi Codama , Michio Arai
发明人： Ichiro Takayama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Mitsufumi Codama , Michio Arai
IPC分类号： G09G3/30 , G09G3/20 , G09G3/32 , H01L27/32 , H01L51/50
CPC分类号： G09G3/3233 , H01L27/3262 , G09G2300/0842 , G09G2320/0233
摘要： An image display device having a plurality of pixcels with uniform light intensity comprises an organic EL element (3), a bias FET (2) for emit current control of said EL element, a capacitor (4) coupled with a gate electrode of said bias FET (2) for holding a signal, and a select FET (1) for selectively writing a signal to said capacitor (4), wherein the value S of said bias FET (2) is larger than that of said select FET (1).
摘要翻译：具有均匀光强度的多个像素的图像显示装置包括有机EL元件（3），用于发射所述EL元件的电流控制的偏置FET（2），与所述偏置的栅电极耦合的电容器（4）用于保持信号的FET（2）和用于选择性地向所述电容器（4）写入信号的选择FET（1），其中所述偏置FET（2）的值S大于所述选择FET（1）的值，。

5. 发明授权

US5821560A Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescent element 失效
标题翻译：用于控制诸如液晶单元或电致发光元件的器件的薄膜晶体管
公开(公告)号：US5821560A
公开(公告)日：1998-10-13
申请号：US609433
申请日：1996-03-01
申请人： Michio Arai , Kazushi Sugiura , Ichiro Takayama , Yukio Yamauchi , Isamu Kobori , Mitsufumi Codama , Naoya Sakamoto
发明人： Michio Arai , Kazushi Sugiura , Ichiro Takayama , Yukio Yamauchi , Isamu Kobori , Mitsufumi Codama , Naoya Sakamoto
IPC分类号： H01L21/336 , H01L29/786 , H01L29/04 , H01L29/76
CPC分类号： H01L29/66765 , H01L29/78648
摘要： A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a drain electrode, in which a lateral length of the first gate electrode is narrower than a lateral length of the second gate electrode. Also, the first gate is electrically insulated from the active layer of semiconductor material by the first insulation layer so that the drain current saturates in a high drain voltage region.
摘要翻译：一种薄膜晶体管，包括绝缘基底，第一和第二栅电极，第一和第二绝缘层，半导体材料的有源层，源电极和漏电极，其中第一栅电极的横向长度比第二栅电极的横向长度。此外，第一栅极通过第一绝缘层与半导体材料的有源层电绝缘，使得漏极电流在高漏极电压区域中饱和。

6. 发明授权

US5591988A Solid state imaging device with low trap density 失效
标题翻译：具有低陷阱密度的固态成像装置
公开(公告)号：US5591988A
公开(公告)日：1997-01-07
申请号：US477104
申请日：1995-06-07
申请人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
发明人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
IPC分类号： H01L21/84 , H01L27/12 , H01L27/146 , H01L31/113 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/14643 , H01L21/84 , H01L27/1237 , H01L31/1133
摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.
摘要翻译：基板（1）具有被绝缘层（2）覆盖的表面，在其上提供通过薄膜技术由非单晶硅制成的有源层（3'）。栅极电极层（5'）通过栅极绝缘层（4）部分地设置在所述有源层上。所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出从所述源电极或所述漏电极获得。用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。

7. 发明授权

US5741718A Method for manufacturing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US5741718A
公开(公告)日：1998-04-21
申请号：US683096
申请日：1996-07-16
申请人： Mitsufumi Codama , Ichiro Takayama , Michio Arai
发明人： Mitsufumi Codama , Ichiro Takayama , Michio Arai
IPC分类号： H01L21/77 , H01L21/84 , H01L29/786 , H01L21/86
CPC分类号： H01L27/1214 , H01L29/78621 , Y10S148/106 , Y10S148/15
摘要： In forming a thin film transistor (TFT) having an offset structure or a lightly doped drain (LDD) structure, a blocking material having a lower etching rate than that of a material constructing a gate electrode is formed. By using the blocking material as a mask, a gate electrode material is side-etched selectively to form gate electrodes. The blocking material is processed selectively and remains in a drain region side. Also, an offset region or an LDD region is formed under the blocking material by performing an impurity ion implantation. On the other hand, after the gate electrodes are formed, a resist is added and then light exposure is performed from a source region side using a light blocking material as a mask, so that the resist remains in a drain region side of the gate electrode. Also, by implanting an impurity ion, an offset region or an LDD region is formed in the drain region side.
摘要翻译：在形成具有偏移结构或轻掺杂漏极（LDD）结构的薄膜晶体管（TFT）的情况下，形成具有比构成栅电极的材料蚀刻速率低的蚀刻速率的阻挡材料。通过使用阻挡材料作为掩模，选择性地蚀刻栅电极材料以形成栅电极。阻挡材料被选择性地处理并保留在漏极区域侧。此外，通过进行杂质离子注入，在阻挡材料下方形成偏移区域或LDD区域。另一方面，在形成栅电极之后，添加抗蚀剂，然后使用遮光材料作为掩模从源极区域进行曝光，使得抗蚀剂保留在栅电极的漏区侧。此外，通过注入杂质离子，在漏区侧形成偏移区域或LDD区域。

8. 发明授权

US5786796A Image desplay device 失效
标题翻译：图像设计
公开(公告)号：US5786796A
公开(公告)日：1998-07-28
申请号：US609376
申请日：1996-03-01
申请人： Ichiro Takayama , Michio Arai , Mitsufumi Codama
发明人： Ichiro Takayama , Michio Arai , Mitsufumi Codama
IPC分类号： H05B33/08 , G09G3/30 , G09G3/32 , H01L51/50 , G09G3/10 , G09G5/00
CPC分类号： G09G3/3233 , G09G2300/0842 , G09G2310/066 , G09G2320/0209 , G09G2320/0223 , G09G2320/0233
摘要： An image display device which is not affected by image control signal for other pixels and gives adjustable intensity based upon control signal is provided. The image display device has a thin film pixel element EL, a non-linear element 5 for emit control of said thin film pixel element EL, a signal hold capacitor C coupled with a gate electrode of said non-linear element 5, another non-linear element 6 for writing data into said capacitor C, and a resistor R coupled between said capacitor C and a fixed potential source. The resistance of said resistor R is larger than ON resistance and smaller than OFF resistance of said non-linear element 6 for data writing.
摘要翻译：提供了不受其他像素的图像控制信号影响并且基于控制信号而提供可调节强度的图像显示装置。图像显示装置具有薄膜像素元件EL，用于发射所述薄膜像素元件EL的非线性元件5，与所述非线性元件5的栅电极耦合的信号保持电容器C，用于将数据写入所述电容器C的线性元件6和耦合在所述电容器C和固定电位源之间的电阻器R. 所述电阻器R的电阻大于导通电阻，并且小于用于数据写入的所述非线性元件6的截止电阻。

9. 发明授权

US5644146A Thin film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：US5644146A
公开(公告)日：1997-07-01
申请号：US407856
申请日：1995-03-21
申请人： Michio Arai , Mitsufumi Codama , Ichiro Takayama
发明人： Michio Arai , Mitsufumi Codama , Ichiro Takayama
IPC分类号： H01L29/78 , H01L21/336 , H01L27/12 , H01L29/786 , H01L27/01
CPC分类号： H01L29/78648 , H01L27/12 , H01L29/78624
摘要： A thin film transistor comprises a dielectric substrate (1), a semiconductor layer (3) of poly-crystalline silicon layer having a drain region (8), an active gate region (4, 8-0), and a source region (7) placed on said substrate (1), a drain terminal (10) and a source terminal (10A) connected to said respective regions for external connection, a gate electrode (6) coupled with a part of said gate region (4) through a dielectric layer (4A), wherein length (d) of said gate electrode (6) is shorter than the length of gate region (4 plus 8-0), so that an offset region (8-0), where no gate electrode faces with said gate region, is produced.
摘要翻译：薄膜晶体管包括电介质基片（1），具有漏极区域（8），有源栅极区域（4,8-0）和源极区域（7）的多晶硅层的半导体层（3）），连接到所述各个区域用于外部连接的漏极端子（10）和源极端子（10A），通过一个栅极电极（6）与所述栅极区域（4）的一部分耦合的栅电极介质层（4A），其中所述栅电极（6）的长度（d）短于栅极区域（4加8-0）的长度，使得偏移区域（8-0）不存在栅电极面与所述栅区产生。

10. 发明授权

US5352921A Photoelectric conversion device and image sensor 失效
标题翻译：光电转换装置和图像传感器
公开(公告)号：US5352921A
公开(公告)日：1994-10-04
申请号：US120322
申请日：1993-09-14
申请人： Mitsufumi Codama , Ichiro Takayama
发明人： Mitsufumi Codama , Ichiro Takayama
IPC分类号： H01L27/146 , H01L27/12 , H01L31/10 , H04N1/028 , H01L27/14 , H01L31/00
CPC分类号： H01L27/12 , H01L27/14643
摘要： Image sensors using thin films and having a higher production yield, low production cost and higher reading resolution are provided. In a photoelectric conversion device having a thin film semiconductor layer is provided that performs photoelectric conversion with a first electrode structured mainly by a metallic material on a light transmitting insulating substrate or an insulating film and a second electrode on the thin film semiconductor layer. A thin insulating film is formed at least partially between the second electrode and the thin film semiconductor layer or the thin film semiconductor layer and the first electrode.
摘要翻译：提供使用薄膜并且具有更高生产成本，低生产成本和更高读取分辨率的图像传感器。在具有薄膜半导体层的光电转换装置中，提供了利用在透光绝缘基板或绝缘膜上主要由金属材料构成的第一电极和在薄膜半导体层上的第二电极进行光电转换的光电转换装置。至少部分地在第二电极和薄膜半导体层或薄膜半导体层和第一电极之间形成薄的绝缘膜。

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