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1. 发明申请

US20130020571A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130020571A1
公开(公告)日：2013-01-24
申请号：US13549867
申请日：2012-07-16
申请人： Shunpei YAMAZAKI , Masahiro TAKAHASHI , Tatsuya HONDA , Takehisa HATANO
发明人： Shunpei YAMAZAKI , Masahiro TAKAHASHI , Tatsuya HONDA , Takehisa HATANO
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/78618
摘要： Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.
摘要翻译：提供了能够实现所谓的常关断开关元件的晶体管的结构及其制造方法。提供了通过提高晶体管的特性实现高速响应和高速操作的半导体器件的结构及其制造方法。提供了一种高度可靠的半导体器件。在其中半导体层，源极和漏极电极层，栅极绝缘层和栅极电极层以该顺序堆叠的晶体管中。作为半导体层，含有铟，镓，锌和氧中的至少四种元素的氧化物半导体层，铟的组成比（原子百分比）为镓和a的组成比的2倍以上使用锌的组成比。

2. 发明申请

US20120138922A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US20120138922A1
公开(公告)日：2012-06-07
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

3. 发明申请

US20130075722A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20130075722A1
公开(公告)日：2013-03-28
申请号：US13613192
申请日：2012-09-13
申请人： Shunpei YAMAZAKI , Atsuo ISOBE , Yutaka OKAZAKI , Takehisa HATANO , Sachiaki TEZUKA , Suguru HONDO , Toshihiko SAITO
发明人： Shunpei YAMAZAKI , Atsuo ISOBE , Yutaka OKAZAKI , Takehisa HATANO , Sachiaki TEZUKA , Suguru HONDO , Toshihiko SAITO
IPC分类号： H01L29/786
CPC分类号： H01L29/41733 , H01L29/42384 , H01L29/78618 , H01L29/7869
摘要： A highly reliable structure for high-speed response and high-speed driving of a semiconductor device, in which on-state characteristics of a transistor are increased is provided. In the coplanar transistor, an oxide semiconductor layer, a source and drain electrode layers including a stack of a first conductive layer and a second conductive layer, a gate insulating layer, and a gate electrode layer are sequentially stacked in this order. The gate electrode layer is overlapped with the first conductive layer with the gate insulating layer provided therebetween, and is not overlapped with the second conductive layer with the gate insulating layer provided therebetween.
摘要翻译：提供了一种用于高速响应和高速驱动半导体器件的高度可靠的结构，其中晶体管的导通状态特性增加。在共面晶体管中，依次层叠氧化物半导体层，包括第一导电层和第二导电层的堆叠的源极和漏极电极层，栅极绝缘层和栅极电极层。栅极电极层与第一导电层重叠，栅极绝缘层设置在它们之间，并且与其间设置有栅极绝缘层的第二导电层不重叠。

4. 发明申请

US20120187397A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120187397A1
公开(公告)日：2012-07-26
申请号：US13356012
申请日：2012-01-23
申请人： Shunpei YAMAZAKI , Atsuo ISOBE , Toshihiko SAITO , Takehisa HATANO , Hideomi SUZAWA , Shinya SASAGAWA , Junichi KOEZUKA , Yuichi SATO , Shinji OHNO
发明人： Shunpei YAMAZAKI , Atsuo ISOBE , Toshihiko SAITO , Takehisa HATANO , Hideomi SUZAWA , Shinya SASAGAWA , Junichi KOEZUKA , Yuichi SATO , Shinji OHNO
IPC分类号： H01L29/786
CPC分类号： H01L29/66969 , H01L21/02488 , H01L21/02565 , H01L27/1225 , H01L29/786 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.
摘要翻译：提供了包括氧化物半导体并且具有良好的电特性的半导体器件。在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。氧化物半导体膜的侧面与绝缘膜接触。氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。栅极绝缘膜与氧化物半导体膜形成并接触。在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。

5. 发明申请

US20130069055A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130069055A1
公开(公告)日：2013-03-21
申请号：US13608044
申请日：2012-09-10
申请人： Shunpei YAMAZAKI , Atsuo ISOBE , Hiromachi GODO , Takehisa HATANO , Sachiaki TEZUKA , Suguru HONDO , Naoto YAMADE , Junichi KOEZUKA
发明人： Shunpei YAMAZAKI , Atsuo ISOBE , Hiromachi GODO , Takehisa HATANO , Sachiaki TEZUKA , Suguru HONDO , Naoto YAMADE , Junichi KOEZUKA
IPC分类号： H01L29/78
CPC分类号： H01L29/41733 , H01L29/78618 , H01L29/7869 , H01L29/78693
摘要： Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.
摘要翻译：提供一种半导体器件，其中提供氧化物半导体层; 设置有栅极电极层的一对布线层电连接到低电阻区域; 并且电极层设置成与低电阻区域接触，在形成布线层的区域之下。

6. 发明申请

US20120153364A1 OXIDE MATERIAL AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物材料和半导体器件
公开(公告)号：US20120153364A1
公开(公告)日：2012-06-21
申请号：US13325700
申请日：2011-12-14
申请人： Shunpei YAMAZAKI , Motoki NAKASHIMA , Tatsuya HONDA
发明人： Shunpei YAMAZAKI , Motoki NAKASHIMA , Tatsuya HONDA
IPC分类号： H01L29/78 , H01B1/00 , C01B13/00
CPC分类号： H01L29/7869 , C01G19/006 , C01P2002/72 , H01L29/04 , H01L29/045 , H01L29/26 , H01L29/78696
摘要： An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.
摘要翻译：目的是提供适用于晶体管，二极管等中所包含的半导体的材料。另一个目的是提供一种包括晶体管的半导体器件，其中与氧化物半导体膜接触的氧化物半导体膜和栅极绝缘膜之间的界面处的电子态的条件是有利的。此外，另一个目的是通过给氧化半导体膜用于沟道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。使用包括具有c轴对准的晶体的氧化物材料形成半导体器件，当从表面或界面的方向观察时，半导体器件具有三角形或六边形的原子排列，并围绕c轴旋转。

7. 发明申请

US20120319114A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120319114A1
公开(公告)日：2012-12-20
申请号：US13495297
申请日：2012-06-13
申请人： Shunpei YAMAZAKI , Tatsuya HONDA
发明人： Shunpei YAMAZAKI , Tatsuya HONDA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： A transistor including an oxide semiconductor layer and having electric characteristics required depending on an intended use, and a semiconductor device including the transistor are provided. In a transistor in which a semiconductor layer, a source electrode layer and a drain electrode layer, a gate insulating film, and a gate electrode layer are stacked in this order over an oxide insulating film, an oxide semiconductor stack composed of at least two oxide semiconductor layers having different energy gaps is used as the semiconductor layer. Oxygen and/or a dopant may be introduced into the oxide semiconductor stack.
摘要翻译：提供了包括氧化物半导体层并且具有根据预期用途需要的电特性的晶体管，以及包括晶体管的半导体器件。在半导体层，源极电极层和漏极电极层，栅极绝缘膜和栅极电极层依次层叠在氧化物绝缘膜上的晶体管中，由至少两种氧化物使用具有不同能隙的半导体层作为半导体层。可以将氧和/或掺杂剂引入到氧化物半导体堆叠中。

8. 发明申请

US20120319183A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120319183A1
公开(公告)日：2012-12-20
申请号：US13495313
申请日：2012-06-13
申请人： Shunpei YAMAZAKI , Tatsuya HONDA
发明人： Shunpei YAMAZAKI , Tatsuya HONDA
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/045 , H01L29/24 , H01L29/267 , H01L29/7782 , H01L29/78609 , H01L29/78696
摘要： One object of the present invention is to provide a structure of a transistor including an oxide semiconductor in a channel formation region in which the threshold voltage of electric characteristics of the transistor can be positive, which is a so-called normally-off switching element, and a manufacturing method thereof. A second oxide semiconductor layer which has greater electron affinity and a smaller energy gap than a first oxide semiconductor layer is formed over the first oxide semiconductor layer. Further, a third oxide semiconductor layer is formed to cover side surfaces and a top surface of the second oxide semiconductor layer, that is, the third oxide semiconductor layer covers the second oxide semiconductor layer.
摘要翻译：本发明的一个目的是提供在晶体管的电特性的阈值电压可以为正的沟道形成区域中的包括氧化物半导体的晶体管的结构，其是所谓的常关断开关元件，及其制造方法。在第一氧化物半导体层上形成具有比第一氧化物半导体层更大的电子亲和力和更小的能隙的第二氧化物半导体层。此外，形成第三氧化物半导体层以覆盖第二氧化物半导体层的侧表面和顶表面，即，第三氧化物半导体层覆盖第二氧化物半导体层。

9. 发明申请

US20120319102A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120319102A1
公开(公告)日：2012-12-20
申请号：US13488879
申请日：2012-06-05
申请人： Shunpei YAMAZAKI , Tatsuya HONDA
发明人： Shunpei YAMAZAKI , Tatsuya HONDA
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/78609 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L27/14616 , H01L29/045 , H01L29/66969 , H01L29/78621 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer and a second oxide semiconductor layer with different energy gaps are stacked and a region containing oxygen in excess of its stoichiometric composition ratio is provided.
摘要翻译：本发明的目的是提供一种晶体管的结构，其具有使用氧化物半导体形成的沟道形成区域和正的阈值电压值，这使得能够形成所谓的常开开关元件。晶体管包括氧化物半导体堆叠，其中至少第一氧化物半导体层和具有不同能隙的第二氧化物半导体层被堆叠，并且提供含有超过其化学计量组成比的氧的区域。

10. 发明申请

US20120286260A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120286260A1
公开(公告)日：2012-11-15
申请号：US13461808
申请日：2012-05-02
申请人： Kosei NODA , Shunpei YAMAZAKI , Tatsuya HONDA , Yusuke SEKINE , Hiroyuki TOMATSU
发明人： Kosei NODA , Shunpei YAMAZAKI , Tatsuya HONDA , Yusuke SEKINE , Hiroyuki TOMATSU
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/0242 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02656 , H01L21/84 , H01L27/10873 , H01L27/1156 , H01L27/1203 , H01L27/1222 , H01L27/1225 , H01L27/1255 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/78609
摘要： A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.
摘要翻译：提供了包括氧化物半导体并且具有高场效应迁移率并且其中阈值电压的变化小的高度可靠的晶体管。通过使用晶体管，提供了难以实现的高性能半导体器件。晶体管包括含有选自铟，锡，锌和铝中的两种或更多种，优选三种或更多种元素的氧化物半导体膜。在加热基板的状态下形成氧化物半导体膜。此外，在晶体管的制造过程中，通过相邻的绝缘膜和/或通过离子注入向氧化物半导体膜提供氧，从而尽可能地减少产生载流子的氧气缺乏。此外，在晶体管的制造过程中，氧化物半导体膜被高度纯化，使得氢的浓度极低。

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