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1. 发明授权

US4903646A V-type cylinder block of internal combustion engine 失效
标题翻译： V型内燃机气缸体
公开(公告)号：US4903646A
公开(公告)日：1990-02-27
申请号：US333419
申请日：1989-04-04
申请人： Shunichi Minagawa , Hiroaki Kuzuoka , Hitoshi Nakamura , Etsuo Ogami
发明人： Shunichi Minagawa , Hiroaki Kuzuoka , Hitoshi Nakamura , Etsuo Ogami
IPC分类号： F02F1/00 , F02B75/18 , F02B75/22 , F02B77/08 , F02D35/00 , F02F1/18 , F02F7/00
CPC分类号： F02F7/0012 , F02B75/22 , F02B77/085 , F02B2075/1832 , F02F2007/0063 , F02F2200/06
摘要： A V-type cylinder block of internal combustion engine is disclosed, which provides two angularly disposed cylinder banks each having a cylinder row of cylinders. A plurality of ribs rise generally from head bolt hole portions defined between two cylinders adjacent each other, are provided between two cylinder rows for interconnecting wall portions of the cylinder rows and intersect at the middle of the cylinder rows for forming intersecting points. At the intersecting points of the plurality of ribs are disposed fixing portions of knocking sensors for detecting an engine knocking.
摘要翻译：公开了一种内燃机的V型气缸体，其提供两个具有圆柱形气缸的角度设置的气缸组。多个肋通常从两个彼此相邻的气缸之间限定的头螺栓孔部分上升，设置在两个气缸列之间，用于互连气缸列的壁部分，并在气缸行的中间相交，用于形成交叉点。在多个肋的相交点设置用于检测发动机敲击的爆震传感器的固定部分。

2. 外观设计

USD699633S1 Twin stroller 有权
标题翻译：双婴儿车
公开(公告)号：USD699633S1
公开(公告)日：2014-02-18
申请号：US29431460
申请日：2012-09-07
申请人： Koichi Kobayashi , Hitoshi Nakamura
设计人： Koichi Kobayashi , Hitoshi Nakamura

3. 发明授权

US08440141B2 Exhaust gas treatment system 有权
标题翻译：废气处理系统
公开(公告)号：US08440141B2
公开(公告)日：2013-05-14
申请号：US13273390
申请日：2011-10-14
申请人： Katsumi Nochi , Masanao Yonemura , Yoshiaki Obayashi , Hitoshi Nakamura , Toshio Koyanagi
发明人： Katsumi Nochi , Masanao Yonemura , Yoshiaki Obayashi , Hitoshi Nakamura , Toshio Koyanagi
IPC分类号： B01D50/00
CPC分类号： B01D53/9477 , B01D53/9418 , B01D53/944 , B01D2251/2062 , B01D2257/708 , Y02A50/2341 , Y02A50/235
摘要： It is intended to provide an exhaust gas treatment system, which allows for VOC removal at lower temperatures and thereby improves the durability of catalysts and suppresses carbon monoxide generation at the final outlet of the system. The present invention provides a treatment system of an exhaust gas containing a nitrogen oxide, carbon monoxide, and a volatile organic compound comprising: an exhaust gas treatment means for removing the nitrogen oxide by reduction with ammonia and partially oxidizing the VOC to CO; and a CO/VOC removal means for oxidizing the CO and partially unreacted VOC, in this order from the upstream flow of the exhaust gas.
摘要翻译：旨在提供一种废气处理系统，其允许在较低温度下除去VOC，从而提高催化剂的耐久性，并抑制系统最终出口处的一氧化碳产生。本发明提供一种含有氮氧化物，一氧化碳和挥发性有机化合物的排气的处理系统，包括：废气处理装置，用于通过用氨还原并将VOC部分氧化成CO来除去氮氧化物; 以及用于从排气的上游流动中依次氧化CO和部分未反应的VOC的CO / VOC去除装置。

4. 发明授权

US08076255B2 Castable refractory 有权
$Castable refractory$
标题翻译：铸造耐火材料
公开(公告)号：US08076255B2
公开(公告)日：2011-12-13
申请号：US12084015
申请日：2006-10-27
申请人： Satoru Ito , Hitoshi Nakamura , Taijiro Matsui , Michio Nitta
发明人： Satoru Ito , Hitoshi Nakamura , Taijiro Matsui , Michio Nitta
IPC分类号： C04B35/101 , C04B35/103 , C04B35/66 , F27B9/34
CPC分类号： F27D1/0006 , C04B35/101 , C04B35/1015 , C04B35/66 , C04B41/009 , C04B41/5022 , C04B41/86 , C04B2235/3217 , C04B2235/3418 , C04B2235/3445 , C04B2235/3463 , C04B2235/349 , C04B2235/3826 , C04B2235/5427 , C04B2235/5436 , C04B2235/725 , C04B2235/80 , F27B9/16 , F27B9/34 , F27B9/36 , F27B9/39 , Y10T428/265 , C04B35/185 , C04B41/4539
摘要： To provide a long-life refractory capable of maintaining durability under severe conditions. The castable refractory comprises a mixture containing at least one of 2 to 10 mass % of silicon carbide and 3 to 10 mass % of chamotte, as an auxiliary raw material, and a binder material, with the remaining balance being one or more main raw materials selected from corundum, mullite, bauxite, chamotte, talc and silica, and is used in an environment exposed to an alkali component-containing hot gas atmosphere. In an alkali component-containing gas atmosphere at a high temperature (750° C. or more), silicon carbide and/or chamotte are vitrified to a thickness of 1 mm or less in the surface layer of the refractory to prevent the alkali component-containing gas from intruding inside of the refractory.
摘要翻译：提供能够在恶劣条件下保持耐久性的长寿命耐火材料。可浇铸耐火材料包括含有2至10质量％的碳化硅和3至10质量％的耐火砖作为辅助原料的至少一种和粘合剂材料的混合物，剩余的是一种或多种主要原料选自刚玉，莫来石，铝土矿，氯化钙，滑石和二氧化硅，并且用于暴露于含碱成分的热气体气氛的环境中。在高温（750℃以上）的含碱成分的气体气氛中，在耐火材料的表层中将碳化硅和/或耐火砖玻璃化至1mm以下的厚度，含有气体从侵入耐火材料的内部。

5. 发明申请

US20110147572A1 ROTARY ENCODER AND ROTATION MECHANISM INCLUDING THE SAME 有权
标题翻译：旋转编码器和旋转机构，包括它们
公开(公告)号：US20110147572A1
公开(公告)日：2011-06-23
申请号：US12968948
申请日：2010-12-15
申请人： Hitoshi Nakamura
发明人： Hitoshi Nakamura
IPC分类号： G01D5/34
CPC分类号： G01D5/2448
摘要： A rotary encoder includes two first detection units disposed at positions that are symmetrical about a rotation axis, each of the first detection units outputting an incremental signal, and second detection unit that outputs an absolute signal φA. The rotary encoder includes a storage unit that stores a plurality of formulas for correcting errors of the incremental signals, the formulas being different from each other in accordance with the signal φA, and the errors being generated due to eccentricity; a calculation unit that calculates a corrected phase φI by performing operation on the incremental signals by using one of the formulas corresponding to the signal φA; and a generation unit that generates a rotation angle of the scale on the basis of the phase φI and the signal φA.
摘要翻译：旋转编码器包括设置在关于旋转轴对称的位置处的两个第一检测单元，每个第一检测单元输出增量信号，第二检测单元输出绝对信号。旋转编码器包括存储单元，其存储用于校正增量信号的误差的多个公式，所述公式根据信号＆amp; A而彼此不同，并且由偏心产生的误差; 通过使用对应于信号＆amp; A的公式中的一个对增量信号进行操作来计算校正相位＆amp; I的计算单元; 以及生成单元，其基于相位I和信号A生成刻度的旋转角度。

6. 发明授权

US07600938B2 Refill for correction pen and refill unit 失效
标题翻译：补充笔和笔芯单元
公开(公告)号：US07600938B2
公开(公告)日：2009-10-13
申请号：US10548125
申请日：2004-03-03
申请人： Kyoko Kobayashi , Makoto Ono , Akira Fukai , Takao Koyama , Hitoshi Nakamura , Kei Omoto , Tadashi Koriki
发明人： Kyoko Kobayashi , Makoto Ono , Akira Fukai , Takao Koyama , Hitoshi Nakamura , Kei Omoto , Tadashi Koriki
IPC分类号： B43K5/00 , B43K5/18
CPC分类号： B43K1/088 , B43K7/02 , B43K7/03 , B43K7/08 , B43K7/10 , B43K7/12 , B43K24/08 , B43L19/0018 , B43L19/0068 , B43M11/085 , C09D10/00 , C09D11/18
摘要： A refill for a correction pen is constructed of a molded article of a polyamide resin obtained from monomers having an aromatic ring or a naphthene ring, a molded article of a blend of two or more kinds of polyamide resins, or a molded article having a multi-layered structure of two or more layers whose innermost layer in contact with the correction fluid is constituted of a polyamide resin. The applying part of a refill unit mounted on a ballpoint type applicator having a pressurizing mechanism in linkage with clicking action is formed by press fitting the rear end of a ballpoint pen tip having a rotatable ball to the attachment portion at the front end of an ink reservoir and a metal tube is squeezed to cover the outer periphery of the attachment portion at the front end of the ink reservoir to which the tip is fitted.
摘要翻译：用于校正笔的笔芯由由具有芳环或环烷烃的单体获得的聚酰胺树脂的模塑制品，两种或多种聚酰胺树脂的共混物的模塑制品或具有多层结构的模制品构成，与校正流体接触的最内层由聚酰胺树脂构成的两层以上的层的结构。安装在具有与点击动作联动的加压机构的圆珠笔式涂抹器上的补充单元的涂布部分通过将具有可旋转球的圆珠笔笔尖的后端压配合到墨水的前端的附着部分而形成储存器和金属管被挤压以覆盖安装部分的前端处的墨水容器的前端处的安装部分的外周边。

7. 发明授权

US07569911B2 Semiconductor device having an improved wiring or electrode structure 有权
标题翻译：具有改进的布线或电极结构的半导体器件
公开(公告)号：US07569911B2
公开(公告)日：2009-08-04
申请号：US11410194
申请日：2006-04-25
申请人： Toshihiko Shiga , Hitoshi Nakamura , Junji Tanimura
发明人： Toshihiko Shiga , Hitoshi Nakamura , Junji Tanimura
IPC分类号： H01L29/93
CPC分类号： H01L21/28575 , H01L29/452 , Y10S257/928
摘要： An ohmic electrode is formed by stacking a lower Ti layer, a diffusion preventing layer, an upper Ti layers and a metallic (Au) layer on a p-type GaAs layer. The diffusion preventing layer includes tantalum (Ta) or niobium (Nb). Thus, interdiffusion of Ga and As in the p-type GaAs layer and Au in the metallic layer can be prevented, and variation in resistivity of the ohmic electrode in a high-temperature, high-humidity environment can be suppressed.
摘要翻译：通过在p型GaAs层上堆叠下Ti层，扩散防止层，上Ti层和金属（Au）层来形成欧姆电极。扩散防止层包括钽（Ta）或铌（Nb）。因此，可以防止金属层中的p型GaAs层和Au中的Ga和As的相互扩散，并且可以抑制在高温，高湿度环境中的欧姆电极的电阻率的变化。

8. 发明授权

US07542094B2 Adapter device 有权
标题翻译：适配器设备
公开(公告)号：US07542094B2
公开(公告)日：2009-06-02
申请号：US11313703
申请日：2005-12-22
申请人： Hitoshi Nakamura , Tomoyasu Katsuyama
发明人： Hitoshi Nakamura , Tomoyasu Katsuyama
IPC分类号： H04N3/14 , G03B17/00
CPC分类号： H04N5/2251 , H04N5/262
摘要： The present invention provides an adapter device adapted for easier operation of a lid that opens and closes an opening through which a video camera is to be inserted and on which a viewfinder is to be installed. The present invention provides an adapter device to which a video camera device is to be attached, the adapter device including an adapter body having formed therein a receptacle in which the video camera device is to be installed and having formed at the rear end thereof an opening through which the video camera device is to be inserted first at a lens-unit mount thereof, a lid provided pivotably on a vertical pivot of the adapter body to open and close the insertion opening, and a mount base provided on the top of the lid on which a viewfinder is to be installed.
摘要翻译：本发明提供一种适配器装置，其适于更容易地操作打开和关闭要插入摄像机的开口的盖子，并且其上将安装取景器。本发明提供了一种适配器装置，摄像机装置将被安装在该适配器装置上，适配器装置包括适配器主体，其中形成有插座，摄像机装置将安装在该插座中，并在其后端形成开口首先将摄像机装置插入其透镜单元安装件，可转动地设置在适配器主体的垂直枢轴上以打开和关闭插入口的盖以及设置在盖的顶部上的安装座在其上安装取景器。

9. 发明申请

US20090059985A1 EL SEMICONDUCTOR DEVICE 有权
标题翻译： EL半导体器件
公开(公告)号：US20090059985A1
公开(公告)日：2009-03-05
申请号：US12038062
申请日：2008-02-27
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/32
CPC分类号： H01S5/327 , H01S5/0218 , H01S5/0421 , H01S5/305 , H01S5/3059
摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.
摘要翻译：具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及提供了一种有源层及其p型覆层。与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族元素由Se和Te组成。本发明的n型层的特征在于具有大的能隙，能够有效地抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷的导带底部的高能量。

10. 发明申请

US20080199983A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR LASER 有权
标题翻译：制造半导体激光的方法
公开(公告)号：US20080199983A1
公开(公告)日：2008-08-21
申请号：US12029510
申请日：2008-02-12
申请人： Hitoshi Nakamura , Shinji Abe , Harumi Nishiguchi
发明人： Hitoshi Nakamura , Shinji Abe , Harumi Nishiguchi
IPC分类号： H01L21/329
CPC分类号： H01S5/0201 , H01L23/544 , H01L24/45 , H01L24/48 , H01L2223/54453 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2924/01013 , H01L2924/01014 , H01L2924/01079 , H01L2924/1033 , H01S5/0202 , H01S5/22 , H01S5/2214 , H01S5/32341 , H01L2924/00014
摘要： A method of manufacturing semiconductor laser device including a GaN wafer includes forming a semiconductor layer on the GaN wafer and on which ridge portions are formed. Grooves are formed in the semiconductor layer such that each groove is disposed in line with the scribe marks, between each of the ridge portions and an upstream scribe mark. The grooves are curved and convex outwardly towards a downstream side, and each groove has an apex on a cleavage line. The side extending from the apex preferably does not form an angle of 60 degrees with respect to a cleavage direction or the cleavage line.
摘要翻译：制造包括GaN晶片的半导体激光器件的方法包括在GaN晶片上形成半导体层并形成脊部。在半导体层中形成凹槽，使得每个凹槽与每个脊部之间的刻划线和上游划线标记配置。凹槽向下游侧弯曲并向外凸出，并且每个凹槽在切割线上具有顶点。从顶点延伸的一侧优选不相对于切割方向或切割线形成60度的角度。

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