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1. 发明申请

US20090059985A1 EL SEMICONDUCTOR DEVICE 有权
标题翻译： EL半导体器件
公开(公告)号：US20090059985A1
公开(公告)日：2009-03-05
申请号：US12038062
申请日：2008-02-27
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/32
CPC分类号： H01S5/327 , H01S5/0218 , H01S5/0421 , H01S5/305 , H01S5/3059
摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.
摘要翻译：具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及提供了一种有源层及其p型覆层。与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族元素由Se和Te组成。本发明的n型层的特征在于具有大的能隙，能够有效地抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷的导带底部的高能量。

2. 发明申请

US20100040103A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100040103A1
公开(公告)日：2010-02-18
申请号：US12536210
申请日：2009-08-05
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/20
CPC分类号： H01S5/327 , H01S5/305 , H01S5/3211 , H01S5/3213 , H01S5/3216
摘要： The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below. 1×1017 cm−3≦N1≦1×1020 cm−3 (1) N1>N2 (2) D1>D2 (3) Ec1
摘要翻译：本发明提供一种半导体器件，其包括：包括n型第一包层，n型第二包层，有源层，p型第一包层和p型第二包层的半导体层，这个顺序在InP衬底上。 n型第一包层和n型第二包层满足下式（1）〜（4），p型第一包层和p型第二包层满足式（5）〜（8））。 1×1017cm-3＆nlE; N1＆nlE; 1×1020cm-3（1）N1> N2（2）D1> D2（3）Ec1

3. 发明授权

US07899104B2 EL semiconductor device 有权
标题翻译： EL半导体器件
公开(公告)号：US07899104B2
公开(公告)日：2011-03-01
申请号：US12038062
申请日：2008-02-27
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/327 , H01S5/0218 , H01S5/0421 , H01S5/305 , H01S5/3059
摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.
摘要翻译：具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及提供了一种有源层及其p型覆层。与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族元素由Se和Te组成。本发明的n型层的特征在于具有大的能隙，导带的底部的高能量对于抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷是有效的。

4. 发明授权

US08050305B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08050305B2
公开(公告)日：2011-11-01
申请号：US12132063
申请日：2008-06-03
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/347 , H01S5/327 , H01L31/0272 , H01L31/0296
CPC分类号： H01S5/347 , B82Y20/00 , H01L21/02392 , H01L21/02485 , H01L21/02568 , H01L21/02579 , H01L33/28 , H01S5/3059
摘要： A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Bex1Mgx2Znx3Te (0
摘要翻译：提供了一种具有高可靠性，长寿命以及通过将新型材料应用于p型覆层的优异发光特性的半导体器件。半导体器件包括在InP衬底上的p型半导体层，其中p型半导体层具有通过交替层叠主要包括Bex1Mgx2Znx3Te（0

5. 发明申请

US20080298415A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080298415A1
公开(公告)日：2008-12-04
申请号：US12132063
申请日：2008-06-03
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Kunihiko Tasai , Tsunenori Asatsuma , Hitoshi Nakamura , Sumiko Fujisaki , Takeshi Kikawa
IPC分类号： H01S5/347 , H01L33/00 , H01L29/15
CPC分类号： H01S5/347 , B82Y20/00 , H01L21/02392 , H01L21/02485 , H01L21/02568 , H01L21/02579 , H01L33/28 , H01S5/3059
摘要： A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Bex1Mgx2Znx3Te (0
摘要翻译：提供了一种具有高可靠性，长寿命以及通过将新型材料应用于p型覆层的优异发光特性的半导体器件。半导体器件包括InP衬底上的p型半导体层，其中p型半导体层具有通过交替层叠主要包括Bex1Mgx2Znx3Te（0

6. 发明申请

US20080247434A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20080247434A1
公开(公告)日：2008-10-09
申请号：US12059540
申请日：2008-03-31
申请人： Katsumi Kishino , Ichiro Nomura , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura
发明人： Katsumi Kishino , Ichiro Nomura , Kunihiko Tasai , Koshi Tamamura , Hiroshi Nakajima , Hitoshi Nakamura
IPC分类号： H01S5/327
CPC分类号： B82Y20/00 , H01L33/06 , H01L33/28 , H01L33/285 , H01S5/2231 , H01S5/3216 , H01S5/3422 , H01S5/347
摘要： A semiconductor light-emitting device capable of increasing the carrier concentration of a p-type cladding layer and improving light-emitting efficiency is provided. A semiconductor light-emitting device is made of a Group II-VI compound semiconductor, and the semiconductor light-emitting device includes an active layer between an n-type cladding layer and a p-type cladding layer, in which the active layer has a Type II superlattice structure, and the junctions between the active layer and the n-type cladding layer and between the active layer and the p-type cladding layer each have a Type I structure, and the p-type cladding layer includes tellurium (Te) as a Group VI element.
摘要翻译：提供了能够提高p型包层的载流子浓度并提高发光效率的半导体发光装置。半导体发光器件由II-VI族化合物半导体制成，并且半导体发光器件包括在n型覆层和p型覆层之间的有源层，其中有源层具有 II型超晶格结构，有源层与n型包覆层之间以及有源层与p型覆层之间的接合部均具有I型结构，p型包层由碲（Te）作为第VI组元素。

7. 发明申请

US20070051937A1 Optical semiconductor devices on InP substrate 有权
标题翻译： InP衬底上的光学半导体器件
公开(公告)号：US20070051937A1
公开(公告)日：2007-03-08
申请号：US11500292
申请日：2006-08-08
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Hitoshi Nakamura
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Hitoshi Nakamura
IPC分类号： H01L29/06
CPC分类号： H01S5/347 , B82Y20/00 , H01L31/0296 , H01L31/035236 , H01L33/06 , H01L33/28 , H01S5/0218 , H01S2304/02
摘要： The present invention aims at providing a structure in which a high p-type carrier concentration of 1×1017 cm−3 or more is obtained in a material in which, although it shows normally p-type conductivity, a carrier concentration smaller than 1×1017 cm−3 is only obtained. Also, the present invention aims at providing highly reliable semiconductor element and device each of which has excellent characteristics such as light emitting characteristics and a long lifetime. Each specific layer, i.e., each ZnSe0.53Te0.47 layer (2ML) is inserted between host layers, i.e., Mg0.5Zn0.29Cd0.21Se layers (each having 10ML (atomic layer) thickness) each of which is lattice matched to an InP substrate. In this case, each specific layer in which a sufficient carrier concentration of 1×1018 cm−3 or more is obtained when a single layer is inserted at suitable intervals. As a result, a sufficient hole concentration of 1×1017 cm−3 or more is obtained in the overall crystal in a material in which a hole concentration smaller than 1×1017 cm−3 has been only conventionally obtained.
摘要翻译：本发明的目的在于提供一种结构，其中在其中显示出1×10 17 -3 -3以上的高p型载流子浓度的材料中获得通常是p型导电性，仅获得小于1×10 17 cm -3的载流子浓度。另外，本发明的目的在于提供高度可靠的半导体元件和器件，其各自具有优异的特性，例如发光特性和长寿命。每个特定层，即每个ZnSe 0.53 Te 0.47层（2ML）被插入到主体层之间，即Mg 0.5 Zn 2+ 每个都具有与InP衬底晶格匹配的Se层（每个具有10ML（原子层）厚度）。在这种情况下，当以适当的间隔插入单层时，获得其中足够的载流子浓度为1×10 18 cm -3以上的特定层。结果，在其中空穴浓度小于1×10 6Ω的材料中，在整个晶体中获得足够的空穴浓度为1×10 17 cm -3以上的空穴浓度。只有传统上获得了17厘米-3 -3。

8. 发明授权

US07772586B2 Optical semiconductor devices on InP substrate 有权
标题翻译： InP衬底上的光学半导体器件
公开(公告)号：US07772586B2
公开(公告)日：2010-08-10
申请号：US11500292
申请日：2006-08-08
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Hitoshi Nakamura
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Hitoshi Nakamura
IPC分类号： H01L33/00
CPC分类号： H01S5/347 , B82Y20/00 , H01L31/0296 , H01L31/035236 , H01L33/06 , H01L33/28 , H01S5/0218 , H01S2304/02
摘要： The present invention aims at providing a structure in which a high p-type carrier concentration of 1×1017 cm−3 or more is obtained in a material in which, although it shows normally p-type conductivity, a carrier concentration smaller than 1×1017 cm−3 is only obtained. Also, the present invention aims at providing highly reliable semiconductor element and device each of which has excellent characteristics such as light emitting characteristics and a long lifetime.Each specific layer, i.e., each ZnSe0.53Te0.47 layer (2 ML) is inserted between host layers, i.e., Mg0.5Zn0.29Cd0.21Se layers (each having 10 ML (atomic layer) thickness) each of which is lattice matched to an InP substrate. In this case, each specific layer in which a sufficient carrier concentration of 1×1018 cm−3 or more is obtained when a single layer is inserted at suitable intervals. As a result, a sufficient hole concentration of 1×1017 cm−3 or more is obtained in the overall crystal in a material in which a hole concentration smaller than 1×1017 cm−3 has been only conventionally obtained.
摘要翻译：本发明的目的在于提供一种结构，其中虽然其表现出正常的p型导电性，但载流子浓度小于1×10 7的材料，其中获得1×1017cm-3以上的高p型载流子浓度仅获得1017厘米-3。另外，本发明的目的在于提供高度可靠的半导体元件和器件，其各自具有优异的特性，例如发光特性和长寿命。每个特定层，即每个ZnSe0.53Te0.47层（2ML）被插入在主层之间，即Mg0.5Zn0.29Cd0.21Se层（每层具有10ML（原子层）厚度），每层具有格子匹配到InP衬底。在这种情况下，当以适当的间隔插入单层时，获得其中1×10 18 cm -3以上的载流子浓度足够的每个特定层。结果，在通常获得的空穴浓度小于1×1017cm-3的材料中，在整个晶体中获得足够的空穴浓度为1×10 17 cm -3以上。

9. 发明申请

US20070117357A1 METHOD OF MANUFACTURING A SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING A DEVICE, AND DEVICE 审中-公开
标题翻译：制造半导体发光装置的方法，半导体发光装置，制造半导体器件的方法，半导体器件，制造器件的方法和器件
公开(公告)号：US20070117357A1
公开(公告)日：2007-05-24
申请号：US11626098
申请日：2007-01-23
申请人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
发明人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： C30B25/02 , B82Y20/00 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/2036 , H01S5/22 , H01S5/2201 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S5/4031 , H01S2301/173
摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
摘要翻译：当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构）具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

10. 发明授权

US07091056B2 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device 有权
标题翻译：半导体发光器件的制造方法，半导体发光器件，半导体器件的制造方法，半导体器件，器件的制造方法以及器件
公开(公告)号：US07091056B2
公开(公告)日：2006-08-15
申请号：US11148771
申请日：2005-06-09
申请人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
发明人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
IPC分类号： H01L21/00
CPC分类号： C30B25/02 , B82Y20/00 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/2036 , H01S5/22 , H01S5/2201 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S5/4031 , H01S2301/173
摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III–V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III–V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III–V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
摘要翻译：当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构）具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

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