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    • 2. 发明授权
    • Method of making ceramic electronic element
    • 制造陶瓷电子元件的方法
    • US07413699B2
    • 2008-08-19
    • US10942959
    • 2004-09-17
    • Shuichi MiuraTetsuji MarunoKazuhiko OdaAkira SasakiKouji Tanaka
    • Shuichi MiuraTetsuji MarunoKazuhiko OdaAkira SasakiKouji Tanaka
    • C04B33/32
    • B32B18/00B32B2311/22C04B37/021C04B2235/6562C04B2235/6565C04B2235/6567C04B2235/6582C04B2237/346C04B2237/405C04B2237/407C04B2237/68C04B2237/704C04B2237/706H01G4/008H01G4/012H01G4/30
    • A ceramic electronic element having improved the continuity of inner electrode layers while suppressing the decrease in adhesion between its dielectric layers and inner electrode layers and the deterioration in functions of the inner electrode layers, and a method of making the same are provided. In the method of making a ceramic capacitor (10) in accordance with the present invention, an electrode paste (22) is applied to a surface (20a) of a green sheet (20) and fired, so as to form a dielectric layer (12) laminated with an electrode layer (14). Since the electrode paste (22) is doped with a BaTiO3 powder, the adhesion between the dielectric layer (22) and inner electrode layer (14) after firing is significantly restrained from lowering, and the sintering start temperature of the electrode paste (22) is close to that of the green sheet (20). Since the electrode paste (22) is doped with a metal resinate, functions of the inner electrode layer (14) are significantly restrained from deteriorating when the insulating BaTiO3 powder is added to the electrode paste (22), and the sintering start temperature of the electrode paste (22) approaches that of the green sheet (20).
    • 一种陶瓷电子元件及其制造方法,其特征在于提供了内部电极层的连续性,同时抑制了其电介质层和内部电极层之间的粘附力的降低以及内部电极层的功能的劣化。 在根据本发明的制造陶瓷电容器(10)的方法中,将电极浆料(22)施加到生片(20)的表面(20a)上并烧制,以形成电介质层 (12)层压有电极层(14)。 由于电极浆料(22)掺杂有BaTiO 3 N 3粉末,烧结后的电介质层(22)和内部电极层(14)之间的粘附性被显着抑制,并且烧结开始 电极浆料(22)的温度接近生片(20)的温度。 由于电极浆料(22)掺杂有金属树脂酸盐,当将绝缘的BaTiO 3粉末添加到电极浆料(22)中时,内部电极层(14)的功能被显着抑制,从而劣化, ,并且电极浆料(22)的烧结开始温度接近生片(20)的烧结开始温度。
    • 6. 发明授权
    • Image capturing device and image capturing method
    • 图像捕获装置和图像捕获方法
    • US08670654B2
    • 2014-03-11
    • US13879823
    • 2011-10-13
    • Kouji TanakaTakashi KiyofujiNorio Kurashige
    • Kouji TanakaTakashi KiyofujiNorio Kurashige
    • H04N5/917
    • H04N19/00012H04N19/149H04N19/197H04N19/198H04N19/593
    • An image capturing device (100) is provided with: an image capturing unit (102) which generates, by continuous image capturing, a plurality of pieces of image data which are continuous in the time direction; an image processing unit which corrects a compression rate of the image data on the basis of a correction factor for correcting the image data, and performs compression coding by use of an intra-frame predictive coding system; a data control unit (124) which stores the image data, which has been subjected to the compression coding, in an image storage unit; a current compression rate derivation unit (130) which derives a current compression rate which is an actual compression rate of the image data which has been subjected to the compression coding; a current compression rate holding unit (132) which holds a plurality of current compression rates continuous in the time direction; a subsequent compression rate prediction unit (134) which predicts a subject compression rate, which is a compression rate of image data to be subjected to the subsequent compression coding next time, from the plurality of current compression rates which are held, or from the plurality of current compression rates which are held and the compression rate of the image data to be subjected to the current compression coding this time; and a correction factor derivation unit which derives the correction factor on the basis of the subsequent compression rate.
    • 一种图像拍摄装置(100)具有:图像拍摄单元,通过连续图像捕获生成在时间方向上连续的多个图像数据; 图像处理单元,其基于用于校正图像数据的校正因子校正图像数据的压缩率,并且使用帧内预测编码系统进行压缩编码; 数据控制单元,其将经过压缩编码的图像数据存储在图像存储单元中; 当前压缩率导出单元(130),其导出作为已进行了压缩编码的图像数据的实际压缩率的当前压缩率; 当前压缩率保持单元(132),其保持在时间方向上连续的多个当前压缩率; 一个后续的压缩率预测单元(134),其从所保持的多个当前压缩率或从多个预定压缩率预测作为下一次压缩编码的图像数据的压缩率的对象压缩率 保持当前的压缩率以及本次要进行当前压缩编码的图像数据的压缩率; 以及校正因子导出单元,其基于随后的压缩率导出校正因子。
    • 7. 发明申请
    • FILM FORMING METHOD
    • 电影制作方法
    • US20140051263A1
    • 2014-02-20
    • US14113134
    • 2012-04-23
    • Kouji TanakaHirokazu Ueda
    • Kouji TanakaHirokazu Ueda
    • H01L21/316H01L21/318
    • H01L21/316C23C16/345C23C16/4554C23C16/511H01L21/02164H01L21/0217H01L21/02211H01L21/02274H01L21/0228H01L21/318
    • This film forming method comprises: a first material gas supply step (A) wherein a first raw material gas is supplied over the substrate to be processed so that a first chemical adsorption layer, which is adsorbed on the substrate by means of the first raw material gas is formed on the substrate to be processed, a second material gas supply step (C) wherein a second raw material that is different from the first raw material gas is supplied over the substrate, on which the first chemical adsorption layer has been formed, so that a second chemical adsorption layer, which is adsorbed by means of the second raw material gas, is formed on the first chemical adsorption layer; and a plasma processing step (E) wherein a plasma processing is carried on at least the first and second chemical adsorption layers using microwave plasma.
    • 该成膜方法包括:第一原料气体供给工序(A),其中第一原料气体供给到被处理基板上,使得通过第一原料吸附在基板上的第一化学吸附层 在被处理基板上形成气体,在其上形成有第一化学吸附层的基板上供给与第一原料气体不同的第二原料的第二原料气体供给工序(C) 使得通过第二原料气体吸附的第二化学吸附层形成在第一化学吸附层上; 和等离子体处理步骤(E),其中至少使用微波等离子体对第一和第二化学吸附层进行等离子体处理。
    • 10. 发明申请
    • APPARATUS AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENTS, AND PHOTOELECTRIC CONVERSION ELEMENT
    • 光电转换元件制造装置及其制造方法,光电转换元件
    • US20100275981A1
    • 2010-11-04
    • US12809447
    • 2008-12-12
    • Tadahiro OhmiAkinobu TeramotoTetsuya GotoKouji Tanaka
    • Tadahiro OhmiAkinobu TeramotoTetsuya GotoKouji Tanaka
    • H01L31/04H01L31/18
    • H01L31/18C23C16/24C23C16/511H01L31/028H01L31/04H01L31/0745H01L31/1804H01L31/1812H01L31/1816Y02E10/547Y02P70/521
    • An apparatus and method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber 10 which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit 40 which supplies plasma excitation gas to a plasma excitation region in the chamber 10, a pressure regulation unit 70 which regulates pressure in the chamber 10, a second gas supply unit 50 which supplies raw gas to a plasma diffusion region in the chamber 10, a microwave application unit 20 which applies microwaves into the chamber 10, and a bias voltage application unit 60 which selects and applies a substrate bias voltage to the substrate W according to the type of gas.
    • 一种用于制造光电转换元件的装置和方法以及光电转换元件,该装置和方法能够高效地用微波等离子体形成膜,防止氧气混合,并减少缺陷数量。 本发明提供一种通过使用微波等离子体CVD在基板上形成半导体叠层膜的光电转换元件制造装置100。 该装置包括:腔室10,其是容纳基底的封闭空间,其上安装有用于薄膜形成的被检体基底;第一气体供给单元40,其向等离子体激发区域提供等离子体激发气体; 调节室10内的压力的压力调节单元70,向室10中的等离子体扩散区域供给原料气体的第二气体供给单元50,将微波施加到室10中的微波施加单元20以及偏置电压 应用单元60,其根据气体的类型选择并施加衬底偏置电压到衬底W.