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    • 3. 发明授权
    • Single-crystal manufacturing apparatus
    • 单晶制造装置
    • US08821636B2
    • 2014-09-02
    • US12936450
    • 2009-04-24
    • Takao AbeKouzou YokotaKouji Mizuishi
    • Takao AbeKouzou YokotaKouji Mizuishi
    • C30B15/02C30B15/14C30B29/06C30B15/00C30B35/00
    • C30B15/14C30B15/00C30B29/06C30B35/00Y10T117/1032Y10T117/1056Y10T117/1068
    • The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.
    • 本发明是一种基于切克劳斯基法的单晶制造装置,其具有构造成容纳包括坩埚的热区部件的主室和被配置为容纳和取出从原料熔体拉出的单晶的拉腔, 该设备还包括与拉动室可互换的多用途室,其中用于加热装入坩埚的原料的加热装置和用于在拉出单晶之后冷却热区部件的冷却装置分别放置在多用途室中。 结果,提供了一种单晶制造装置,其能够在大直径的单晶例如约200mm以上的制造中,单晶制造装置的工作速率和单晶制造装置的生产率 水晶要改善。
    • 5. 发明授权
    • Apparatus and method for producing single crystal
    • 单晶制造装置及方法
    • US08337616B2
    • 2012-12-25
    • US12734423
    • 2008-12-01
    • Takao Abe
    • Takao Abe
    • C30B35/00C30B15/00
    • C30B29/06C30B15/16Y10T117/10Y10T117/1024Y10T117/1068Y10T117/1072Y10T117/1088
    • A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage for the seed crystal and a grown single crystal. In the single-crystal manufacturing apparatus, a material polycrystal contained the crucible is melted by a heater, and the seed crystal is made to contact the molten polycrystal and is lifted. The single-crystal manufacturing apparatus comprises a cylindrical quartz tube having a curved bottom portion, and a dome-shaped quartz plate. The curved bottom portion faces the crucible from the upper portion of the chamber through the guide passage. The quartz plate is arranged to enclose the quartz tube. The quartz tube has a reflecting structure for reflecting a heat ray from at least its bottom portion whereas the quartz plate has a reflecting structure for reflecting the heat ray to the crucible.
    • 单晶体制造装置包括室,坩埚在室内,在坩埚周围设置的加热器,用于提升晶种的提升机构,以及用于晶种的引导通道和生长的单晶。 在单晶体制造装置中,包含坩埚的多晶体被加热器熔化,使晶种与熔融的多晶体接触并提升。 单晶制造装置包括具有弯曲底部的圆柱形石英管和圆顶状石英板。 弯曲的底部部分通过引导通道从腔室的上部面向坩埚。 石英板被设置成封闭石英管。 石英管具有用于从至少其底部反射热射线的反射结构,而石英板具有用于将热射线反射到坩埚的反射结构。
    • 7. 发明申请
    • SINGLE-CRYSTAL MANUFACTURING APPARATUS
    • 单晶制造设备
    • US20110030612A1
    • 2011-02-10
    • US12936450
    • 2009-04-24
    • Takao AbeKouzou YokotaKouji Mizuishi
    • Takao AbeKouzou YokotaKouji Mizuishi
    • C30B15/00C30B15/10C30B15/14
    • C30B15/14C30B15/00C30B29/06C30B35/00Y10T117/1032Y10T117/1056Y10T117/1068
    • The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.
    • 本发明是一种基于切克劳斯基法的单晶制造装置,其具有构造成容纳包括坩埚的热区部件的主室和被配置为容纳和取出从原料熔体拉出的单晶的拉腔, 该设备还包括与拉动室可互换的多用途室,其中用于加热装入坩埚的原料的加热装置和用于在拉出单晶之后冷却热区部件的冷却装置分别放置在多用途室中。 结果,提供了一种单晶制造装置,其能够在大直径的单晶例如约200mm以上的制造中,单晶制造装置的工作速率和单晶制造装置的生产率 水晶要改善。